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Results for “GALLIUM ARSENIDE”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRS1966

Piezoelectroreflectance in GaAs.

Static uniaxial compression effect measurement along /100/, /110/ and /111/ on electroreflectance spectrum of gallium arsenide, using electrolyte technique

PIEZOELECTRICITY↗
NASA NTRS1963

Radiation studies on gaas and si devices.

Effects of nuclear radiation on gallium arsenide and silicon solar cells, noting performance difference in terms of initial lifetime and photo- absorption process

GALLIUM ARSENIDE↗
DOE OSTI2025

ARC-DPA 1-MeV Neutron Fluence Equivalence Model for GaAs

Here, the legacy data used in the production of the American Society for Testing and Materials (ASTM) E722 standard for gallium arsenide (GaAs) were fit with the athermal recombination corrected-displacements per atom (ARC-DPA) model for the development of a novel 1-MeV neutron equivalent fluence metric. Improving on previous work, the coefficients for the ARC-DPA model were optimized using a conjugate gradient method, and the uncertainties in the observed damage in different benchmark neutron fields were sampled to quantify their contribution to the damage metric. The optimized parameters of −0.474 ± 0.03 for b arcdpa and 0.016 ± 0.002 for c arcdpa provided good agreement and indicated that the solution is not sensitive to the corresponding fluence uncertainties. Compared to the current 1-MeV neutron fluence equivalence standard for displacement damage in GaAs, our results indicate that for a thermal reactor neutron environment, displacement damage has been underestimated by around 25% and that the saturation value for the damage efficiency had been higher than previously modeled.

1-MeV equivalent fluence↗
DOE OSTI2026

15.3% AM1.5G Efficiency GaAs Solar Cells Fabricated via an Epitaxy-Free Process

Here, we report simple and potentially low-cost techniques for creating high-quality n-type gallium arsenide (GaAs) and GaAs p/n junctions and fabricate GaAs p/n junction solar cells. Detailed-balance modeling suggests that 20% AM1.5G efficiency p/n homojunction devices may be possible if the surface doping concentration can be limited to values less than ∼ 5 × 10 19 cm −3 . Our process exploits an open-tube, vapor-phase, deposition-free, zinc diffusion technique for forming p-type layers in melt-grown n-GaAs substrates that results in sheet resistances less than 1 kΩ/$\square$. In addition, we have improved the minority carrier diffusion lengths of melt-grown GaAs from less than one micron to over five microns using an open-tube, vacuum-free, annealing process which reduces the density of EL2 midgap defects. Finally, we have combined these advances to fabricate epitaxy-free, GaAs solar cells with a validated AM1.5G efficiency of 15.3%.

14 SOLAR ENERGY↗