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A 13-day long duration balloon flight carrying a germanium detector was flown from Williams Field, Antartica in December 1992. After recovery of the payload the activity induced in the detector was measured.
Monocrystalline semiconductor lattices with a buried porous semiconductor layer having different chemical composition is discussed and monocrystalline semiconductor superlattices with a buried porous semiconductor layers having different chemical composition than that of its monocrystalline semiconductor superlattice are discussed. Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si-Ge layers followed by patterning into mesa structures. The mesa structures are strain etched resulting in porosification of the Si-Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si-Ge layers produced in a similar manner emitted visible light at room temperature.
The high-magnetic-field crystal growth facility at the Marshall Space Flight Center will be briefly described. This facility has been used to grow bulk germanium by the Bridgman technique in magnetic fields up to 5 Tesla. The results of investigations of ampoule material on the interface shape and thermal field applied to the melt on stability against convection will be discussed.
Up to now, detached growth was observed mainly under microgravity, i.e. under the absence of hydrostatic pressure that hinders the formation of a free melt meniscus. the detached growth of germanium doped with gallium was obtained under 1 g conditions, the growth was performed in quartz-glass ampoule. Part of the crystal grew without wall contact, the detached growth was observed in-situ with a CCD-camera as well as after the growth process in form of growth lines and the formation of <111> facets on the crystal surface. GeSi crystal (oriientation: <111>, maximum silicon content: 4 at%, seed material: Ge) was grown in a pBN crucible (excluding the possibility of in-situ monitoring of the growth process). The grown crystal exhibits three growth facets, indicating also wall free growth. Surface analysis of the crystals (NDIC, SEM) and characterization of crystal segregation (EDAX, resistivity measurement) and defect structure (EPD, x-ray diffraction measurements) will be presented.
An accurate effective core potential (ECP), including frozen 3s, 3p orbitals and a single-zeta contracted 3d orbital, has been developed for germanium. The ECP with associated valence basis set reproduces the corresponding all-electron results for the atomic excitations and the geometry and excitation energies of GeH2. At the SCF, CAS SCF and CI levels the maximum difference from the all-electron results is 0.5 kcal/mol in the (sup 1)A(sub 1) - (sup 3)B(sub 1) excitation energy. Finally, the ECP description is used with an extended valence basis set and large-scale CAS SCF and multi-reference CI wavefunctions to compute the singlet-triplet separation; the final CI result including the Davidson correction is 22.5 kcal/mol.
The n-channel Germanium junction field effect transistor (Ge-JFET) was designed and fabricated for cryogenic applications. The Ge-JFET exhibits superior noise performance at liquid nitrogen temperature (77 K). From the device current voltage characteristics of n-channel JFETs, it is seen that transconductance increases monotonically with the lowering of temperature to 4.2 K (liquid helium temperature).
The Peltier effect is the fundamental mechanism that makes interface demarcation through current pulsing possible. If a method for calculating the necessary current density for effective demarcation is to be developed, it will be necessary to know the value of the Peltier coefficient. This study determined experimentally the value of the Peltier coefficient for gallium-doped germanium by comparing the change in average growth rates between current-on and current-off periods. Current-on and current-off layer thickness measurements were made using differential interference contrast microscopy and atomic force microscopy. It was found that the Joule and Thomson effects could not be neglected. Peltier coefficients calculated from the experimental data with an analysis that accounts for Joule, Thomson, and Peltier effects yielded an average value for the Peltier coefficient of 0.076 +/- 0.015 V.
The sessile drop technique has been used to measure the wetting angle and the surface tension of molten germanium (Ge) on various substrate materials. Sapphire, fused silica, glassy carbon, graphite, SiC, carbon-based aerogel, pyrolytic boron nitride (pBN), AlN, Si3N4, and CVD diamond were used as substrate materials. In addition, the effects of different cleaning procedures and surface treatments on the wetting behavior were investigated. The highest wetting angles with values around 170 deg. were found for pBN substrates under active vacuum or with a slight overpressure of 5N Argon or forming gas (2% Hydrogen in 5N Argon). The measurement of the surface tension and its temperature dependence for Ge under a forming gas atmosphere resulted in gamma(T) = 591 - 0.077 (T-T(sub m).
Detachment of the melt meniscus from the crucible during semiconductor Bridgman growth experiments has been observed in recent years, especially under microgravity experiments. Under earth conditions, the hydrostatic pressure counteracts the mechanism, whereby it is more difficult to achieve detached Bridgman growth. Attempts to get stable detached growth under terrestrial conditions have been discussed in the literature and have been the subject of recent experiments in our own group. The advantage of crystals grown without wall contact is obvious: In general, they possess a higher crystal quality than conventional Bridgman grown crystals with wall contact. However, due to the interaction of different parameters such as the wetting behavior of the melt with the crucible, and the dependence of the growth angle with the shape of the melt meniscus, the mechanism leading to detachment is very complicated and not completely understood. We have grown several doped and undoped Germanium crystals with the detached Bridgman and the normal Bridgman growth technique. Pyrolytic boron nitride containers were used for all growth experiments. In the detached grown crystals the typical gap thickness between the pBN crucible and the crystal is in the range of 10 to 100 micrometers, which was determined by performing profilometer measurements. Etch pit density measurements were also performed and a comparison between detached and attached grown crystals will be given. An interesting feature was detected on the surface of a detached grown crystal. Strong surface striations with an average axial distance of 0.5 mm were observed around the whole circumference. The maximum fluctuation of the gap thickness is in the range of 5-10 micrometers. These variations of the detached gap along the crystal axis can be explained by a kind of stiction of the melt/crucible interface and thus by a variation of the meniscus shape. This phenomenon leading to the fluctuation of the gap thickness will be discussed in detail.
Space-based radiometric observations of key hydrological parameters (e.g., soil moisture) at the spatial and temporal scales required in the post-2002 era face significant technological challenges. These measurements are based on relatively low frequency thermal microwave emission (at 1.4 GHz for soil moisture and salinity, 10 GHz and up for precipitation, and 19 and 37 GHz for snow). The long wavelengths at these frequencies coupled with the high spatial and radiometric resolutions required by the various global hydrology communities necessitate the use of very large apertures (e.g., greater than 20 m at 1.4 GHz) and highly integrated stable RF electronics on orbit. Radio-interferometric techniques such as Synthetic Thinned Array Radiometry (STAR), using silicon germanium (SiGe) low power radio frequency integrated circuits (RFIC), is one of the most promising technologies to enable very large non-rotating apertures in space. STAR instruments are composed of arrays of small antenna/receiving elements that are arranged so that the collecting area is smaller than an equivalent real aperture system, allowing very high packing densities for launch. A 20 meter aperture at L-band, for example, will require greater than 1000 of these receiving elements. SiGe RFIC's reduce power consumption enough to make an array like this possible in the power-limited environment of space flight. An overview of the state-of-the-art will be given, and current work in the area of SiGe radiometer development for soil moisture remote sensing will be discussed.
Several (111)-oriented, Ga-doped germanium crystals were grown in pyrolytic boron nitride (pBN) containers by the Bridgman and the detached Bridgman growth techniques. Growth experiments in closed-bottom pBN containers resulted in nearly completely detached-grown crystals, because the gas pressure below the melt can build up to a higher pressure than above the melt. With open-bottom tubes the gas pressure above and below the melt is balanced during the experiment, and thus no additional force supports the detachment. In this case the crystals grew attached to the wall. Etch pit density (EPD) measurements along the axial growth direction indicated a strong improvement of the crystal quality of the detached-grown samples compared to the attached samples. Starting in the seed with an EPD of 6-8 x 10(exp 3)/square cm it decreased in the detached-grown crystals continuously to about 200-500/square cm . No significant radial difference between the EPD on the edge and the middle of the crystal exists. In the attached grown samples the EPD increases up to a value of about 2-4 x 10(exp 4)/square cm (near the edge) and up to 1 x 10(exp 4)/square cm in the middle of the sample. Thus the difference between the detached- and the attached-grown crystals with respect to the EPD is approximately two orders of magnitude.
Detachment of the melt meniscus from the crucible during semiconductor Bridgman growth experiments has been observed in recent years especially, under microgravity experiments. Under earth conditions, the hydrostatic pressure counteracts the mechanism, whereby it is more difficult to achieve detached Bridgman growth. Attempts to get stable detached growth under terrestrial conditions have been discussed in the literature and have been the subject of recent experiments in our own group. The advantage of crystals grown without wall contact is obvious: In general, they possess a higher crystal quality than conventional Bridgman grown crystals with wall contact. However, due to the interaction of different parameters such as the wetting behavior of the melt with the crucible, and the dependence of the growth angle with the shape of the melt meniscus, the mechanism leading to detachment is very complicated and not completely understood. We have grown several doped and undoped Germanium crystals with the detached Bridgman and the normal Bridgman growth technique. Pyrolytic boron nitride containers were used for all growth experiments. In the detached grown crystals the typical gap thickness between the pBN crucible and the crystal is in the range of 10 to 100 microns, which was determined by performing profilometer measurements. Etch pit density measurements were also performed and a comparison between detached and attached grown crystals will be given. An interesting feature was detected on the surface of a detached grown crystal. Strong surface striations with an average axial distance of 0.5mm were observed around the whole circumference. The maximum fluctuation of the gap thickness is in the range of 5-10 microns. These variations of the detached gap along the crystal axis can be explained by a kind of stiction of the melt/crucible interface and thus by a variation of the meniscus shape. This phenomenon leading to the fluctuation of the gap thickness will be discussed in detail.
During crystal growth in the vertical Bridgman process, both the melt and the growing crystal are in contact with the ampoule wall. The different thermal coefficients of expansion of the crystal and the ampoule wall can lead to stresses, crystal defects, and not rarely to cracks and/or polycrystalline growth in the crystal. The detached Bridgman process is characterized by the fact that the melt meniscus frees itself from the ampoule wall and the crystal can be grown without wall contact with the ampoule. After the effect of detachment was observed due to the reduced force of gravity during the early experiments under microgravity conditions, in the past few years the Bridgman process likewise has been successfully used to grow at least partially detached under 1g-condition. If the requirements for detaching the melt meniscus from the ampoule wall are not fulfilled by the material-specific parameters (like e.g. wetting behavior between ampoule and melt and the growth angle of the crystal), detachment can be obtained also by the imposition of suitable pressure ratios in the growth ampoule. In the context of this paper, the growth of germanium by the detached and vertical Bridgman processes in pyrolytic boron nitride crucibles will be reported, Typical gap widths between ampoule wall and detached grown crystals are approximately 10-50 microns. Compared to the crystals grown with wall contact, a reduction of the etch pit density of approximately two orders of magnitude could be obtained by growing with the detached process.
A series of (100)-oriented gallium-doped germanium crystals have been grown by the Bridgman method and under the influence of a rotating magnetic field (RMF). The RMF has a marked affect on the interface shape, changing it from concave to nearly flat. The onset of time-dependent flow instabilities occurs when the critical magnetic Taylor number is exceeded, and this can be observed by noting the appearance of striations in the grown crystals. The critical magnetic Taylor number is a sensitive function of the aspect ratio and, as the crystal grows under a constant applied magnetic field, the induced striations change from nonperiodic to periodic, undergo a period-doubling transition, and then cease to exist. Also, by pulsing the RMF on and off, it is shown that intentional interface demarcations can be introduced.
The hallmarks of Neutron Transmutation Doped (NTD) germanium cryogenic thermistors include high reliability, reproducibility, and long term stability of bulk carrier transport properties. Using micro-machined NTD Ge thermistors with integral 'flying' leads, we can now fabricate two-dimensional arrays that are built up from a series of stacked linear arrays. We believe that this modular approach of building, assembling, and perhaps replacing individual modules of detectors is essential to the successful fabrication and testing of large multi-element instruments. Details of construction are presented.
Crystal growth by the vertical Bridgman method in which there is little or no contact between the wall and the crystal has been termed detached solidification. Detachment has been observed frequently in previous microgravity experiments, and has been reported under some terrestrial conditions as well. It is expected that detachment can be conditioned by establishing an appropriate pressure difference below and above the melt. To test this hypothesis, an experimental technique has been developed to measure this pressure difference during the growth of germanium by the vertical Bridgman method. The apparatus allows for both monitoring the pressures and actively controlling them during growth. For a given melt height, there is a maximum pressure difference attainable before gas bubbles up through the melt. This maximum pressure increases with increasing melt height. As the melt height approaches zero, the maximum pressure difference, about 20 mbar in these experiments, is determined by the surface tension and gap width of the meniscus at the bottom of the melt.
Combining broad-beam circuit level SEU response with ion microprobe tests on single silicon germanium heterojunction bipolar transistors allows for a better understanding of the charge collection mechanisms responsible for SEU response of HBT technology.
A series of (100)-oriented gallium-doped germanium crystals have been grown by the Bridgman method and under the influence of a rotating magnetic field (RMF). Time-dependent flow instabilities occur when the critical magnetic Taylor number (Tm(sup c) is exceeded, and this can be observed by noting the appearance of striations in the grown crystals. The experimental data indicate that Tm(sup c) increases as the aspect ratio of the melt decreases. Modeling calculations predicting Tm(sup c) as a function of aspect ratio are in reasonable agreement with the experimental data. The RMF has a marked affect on the interface shape, changing it from concave to nearly flat as the RMF strength is increased. Also, by pulsing the RMF on and off, it is shown that intentional interface demarcations can be introduced.