Nanosecond fluorimeter.
Nanosecond fluorimeter for measuring emission kinetics of chromophores
DATA ACQUISITION↗
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Results for “PHOTOLUMINESCENCE”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Defect states in red emitting InAlAs quantum dots
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nanotechnology defect states time resolved photolu↗
Interactions, Interdiffusion and Segregation in Quantum Dot Ensembles
Statistically non-interacting quantum dot ensembles can be achieved by raising surface energies during growth.
nanostructures InGaAs photoluminescence structural↗
Tunable Intersublevel Transitions in Self-forming Semiconductor Quantum Dots
Interfacial compositional disordering in InGaAs/GaAs quantom dots has been used to tune their intersublevel energy spaceings (delta E subscript [(i + 1) - i]).
Semiconductor Tunable Intersublevel Transitions↗
Ensemble Interactions in Strained Semiconductor Quantum Dot
Large variations in InGaAs quantum dot concentrations were obtained with simultaneous growths on vicinal GaAs[001] substrates with different surface step densities.
quantum dots optical properties photoluminescence↗
Proton Induced Optical Degradation in InGaAs/GaAs Quantum Confined Structures
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radiation damage quantum dots photoluminescence↗
Self-assembled III-V quantum dots: potential for silicon optoelectronics
The basic optoelectronic properties of self-forming InGaAs/InAlAs QDs are examined in parallel with their device implementation. Recent results showing remarkably good tolerance to radiation induced point defects and good luminescence emission from InAs/InGaAs QDs grown on dislocationarrays are discussed in terms of an enabling technology which will allow optelectronics integration with silicon technology.
nanotechnologies quantum dot devices heteroepitaxy↗
Carrier Dynamics in Quantum Dot Structures with Different Interdot Spacings
The time of carrier transfer into a dot decreases with increasing dot density as well as with photoexcited carrier denstiy and temperature. It is suggested that potential barriers at the barrier, wetting layer and quantum dot interfaces hinder the carrier capture in low-density quantum dot structures.
quantum↗