Search NASA⌕ Search

SEARCH · Search NASA

Results for “PURITY”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRS1976

Development of doped-germanium photoconductors for astronomical observations at wavelengths from 30 to 120 micrometers

Technology was developed for production of doped-germanium detectors which have optimized performance in the 30- to 120-micrometer wavelength range and are capable of achieving the objectives of the Infrared Astronomy Satellite space mission. The work of this phase was divided into the following major tasks: (1) growth of Ge:Ga crystals from high-purity starting material with Ga concentrations different from that previously produced, and development of a zone leveling method to produce a uniform Ga doping concentration; (2) growth of uncompensated Ge:Be crystals from high-purity starting material with a range of Be concentrations between 10 to the 14th power and 10 to the 16th power atoms/cubic cm; (3) evaluation of crystals by means of Hall effect and resistance measurements as a function of temperature; (4) fabrication and test of detectors made from both Ge:Be and Ge:Ga crystals to determine the relative performance between different crystals. Correlation of detector test data with material evaluation data and analysis of how to further optimize detector performance.

Bratt, P. R.↗
NASA NTRS1978

Application of ESCA to the determination of stoichiometry in sputtered coatings and interface regions

X-ray photoelectron spectroscopy was used to characterize radiofrequency sputter deposited films of several refractory compounds. Both the bulk film properties such as purity and stoichiometry and the character of the interfacial region between the film and substrate were examined. The materials were CrB2, MoS2, Mo2C, and Mo2B5 deposited on 440C steel. It was found that oxygen from the sputtering target was the primary impurity in all cases. Biasing improves the film purity. The effect of biasing on film stoichiometry is different for each compound. Comparison of the interfacial composition with friction data suggests that adhesion of these films is improved if a region of mixed film and iron oxides can be formed.

Wheeler, D. R.↗
NASA NTRS1977

Passive particle dosimetry

Present methods of dosimetry are reviewed with emphasis on the processes using silver chloride crystals for ionizing particle dosimetry. Differences between the ability of various crystals to record ionizing particle paths are directly related to impurities in the range of a few ppm (parts per million). To understand the roles of these impurities in the process, a method for consistent production of high purity silver chloride, and silver bromide was developed which yields silver halides with detectable impurity content less than 1 ppm. This high purity silver chloride was used in growing crystals with controlled doping. Crystals were grown by both the Czochalski method and the Bridgman method, and the Bridgman grown crystals were used for the experiments discussed. The distribution coefficients of ten divalent cations were determined for the Bridgman crystals. The best dosimeters were made with silver chloride crystals containing 5 to 10 ppm of lead; other impurities tested did not produce proper dosimeters.

Childs, C. B.↗
NASA NTRS1978

Process for preparing higher oxides of the alkali and alkaline earth metals

High purity inorganic higher oxides of the alkali and alkaline earth metals are prepared by subjecting the hydroxide of the alkali and alkaline earth metal to a radio frequency discharge sustained in oxygen. The process is particulary adaptable to the production of high purity potassium superoxide by subjecting potassium hydroxide to glow discharge sustained in oxygen under the pressure of about 0.75 to 1.00 torr.

Sadhukhan, P.↗
NASA NTRS1979

Quality control during IC processing

Manual gives detailed test procedures for controlling silicon-wafer processing in manufacture of integrated circuits. Included among 43 test procedures are: ionic, bacterial, and solids contamination of high-purity water needed for wafer processing; crystallographic reflection, purity, and orientation; substrate dimensions and finish; thickness of deposited epitaxial films; oxide quality; photoresist characteristics; pinholes in insulating layers; metallized adhesion; and quality of ohmic contact.

Source record↗
NASA NTRS1979

Silicon halide-alkali metal flames as a source of solar grade silicon

The feasibility of using alkali metal-silicon halide diffusion flames to produce solar-grade silicon in large quantities and at low cost is demonstrated. Prior work shows that these flames are stable and that relatively high purity silicon can be produced using Na + SiCl4 flames. Silicon of similar purity is obtained from Na + SiF4 flames although yields are lower and product separation and collection are less thermochemically favored. Continuous separation of silicon from the byproduct alkali salt was demonstrated in a heated graphite reactor. The process was scaled up to reduce heat losses and to produce larger samples of silicon. Reagent delivery systems, scaled by a factor of 25, were built and operated at a production rate of 0.5 kg Si/h. Very rapid reactor heating rates are observed with wall temperatures reaching greater than 2000 K. Heat release parameters were measured using a cooled stainless steel reactor tube. A new reactor was designed.

Olsen, D. B.↗
NASA NTRS1979

Bubble behavior during solidification in low-gravity

The trapping and behavior of gas bubbles were studied during low gravity solidification of carbon tetrabromide. The flight experiments were performed during two sounding rocket flights (SPAR 1 and SPAR 3) and involved gradient freeze solidification of gas saturated melts. Gas bubbles were evolved at the solid-liquid interfaces during the low gravity intervals. No large-scale thermal migration of bubbles, bubble pushing by the solid-liquid interface, or bubble detachment from the interface were observed during the low gravity experiments. During the SPAR 3 experiment, a unique bubble motion-fluid flow event occurred in one specimen: a large bubble moved downward and caused some circulation of the melt. The gas bubbles that were trapped by the solid in commercial purity material formed voids that had a cyclindrical shape in SPAR 3, in contrast to the spherical shape that had been observed in SPAR 1. These shapes were not influenced by the gravity level, but were dependent upon the initial temperature gradient. In higher purity material the shape of the voids changed from cylindrical in one-g to spherical in low-g.

Papazian, J. M.↗
NASA NTRS1978

Application of ESCA to the determination of stoichiometry in sputtered coatings and interface regions

X-ray Photoelectron Spectroscopy (XPS) was used to characterize radiofrequency sputter deposited films of several refractory compounds. Both the bulk film properties such as purity and stoichiometry and the character of the interfacial region between the film and substrate were examined. The materials were CrB2, MoS2, Mo2C, and Mo2B5 deposited on 440C steel. It was found that oxygen from the sputtering target was the primary impurity in all cases. Biasing improves the film purity. The effect of biasing on film stoichiometry is different for each compound. Comparison of the interfacial composition with friction data suggests that adhesion of these films is improved if a region of mixed film and iron oxides can be formed.

Wheeler, D. R.↗
NASA NTRS1979

Electrodeposition applications for the Space Shuttle Main Engine

Electrodeposition processes play a key role in the fabrication and in-service performance of the Space Shuttle Main Engine. Applications range from the electroforming of the main combustion chamber to the deposition of high-purity copper or gold for hydrogen embrittlement protection of susceptible materials of construction, or nickel for mechanical protection of foam insulated propellant ducts. Techniques for controlling electrolyte purity, verification of deposit integrity, and deposit profile and thickness are reported. The use of in-situ techniques (cell-plating) for localized plating and repair of damaged substrate materials are summarized.

Otousa, J. E.↗
NASA NTRS1979

Synthesis of amino acyl adenylates using the tert-butoxycarbonyl protecting group

The synthesis of amino acyl adenylates using N-tert-butoxycarbonyl-protected amino acids is reported. Anhydrous solutions containing N-tert-butoxycarbonyl alanine, phenylalanine, and methionine were combined with the anhydrous mono (tri-n-octylammonium) salt of adenosine 5'-phosphate and the resultant amino acyl adenylates were characterized by means of elemental analysis, and infrared and proton NMR spectroscopy. Amino acyl adenylate yields of up to 60% were obtained with high purity at room temperatures. The reported synthesis is considered to represent a large improvement over previous methods due to the purity of the products, normal temperature requirements, and the stability of the starting compounds, which suggests its use in investigations of prebiotic oligo- and polypeptide synthesis.

Armstrong, D. W.↗
NASA NTRS1979

Bubble behavior during solidification in low gravity

The trapping and behavior of gas bubbles were studied during low-gravity solidification of carbon tetrabromide, a transparent metal-model material. The experiment was performed during a NASA-sponsored sounding rocket flight and involved gradient freeze solidification of a gas-saturated melt. Gas bubbles were evolved at the solid-liquid interface during the low-gravity interval. No large-scale thermal migration of bubbles, bubble pushing by the solid-liquid interface, or bubble detachment from the interface were observed during the low-gravity experiment. A unique bubble motion-fluid flow event occurred in one specimen: a large bubble moved downward and caused some circulation of the melt. The gas bubbles that were trapped by the solid in commercial-purity material formed voids that had a cylindrical shape, in contrast to the spherical shape that had been observed in a prior low-gravity experiment. These shapes were not influenced by the gravity level (0.0001 g-0 vs g-0), but were dependent upon the initial temperature gradient. In higher purity material, however, the shape of the voids changed from cylindrical in 1g to spherical in low gravity.

Papazian, J. M.↗
NASA NTRS1978

Characterization and properties of controlled nucleation thermochemical deposited (CNTD) silicon carbide

The microstructure of controlled nucleation thermochemical deposition (CNTD) - SiC material was studied and the room temperature and high temperature bend strength and oxidation resistance was evaluated. Utilizing the CNTD process, ultrafine grained (0.01-0.1 mm) SiC was deposited on W - wires (0.5 mm diameter by 20 cm long) as substrates. The deposited SiC rods had superior surface smoothness and were without any macrocolumnar growth commonly found in conventional CVD material. At both room and high temperature (1200 - 1380 C), the CNTD - SiC exhibited bend strength approximately 200,000 psi (1380 MPa), several times higher than that of hot pressed, sintered, or CVD SiC. The excellent retention of strength at high temperature was attributed to the high purity and fine grain size of the SiC deposit and the apparent absence of grain growth at elevated temperatures. The rates of weight change for CNTD - SiC during oxidation were lower than for NC-203 (hot pressed SiC), higher than for GE's CVD - SiC, and considerably below those for HS-130 (hot pressed Si3N4). The high purity, fully dense, and stable grain size CNTD - SiC material shows potential for high temperature structural applications; however problem areas might include: scaling the process to make larger parts, deposition on removable substrates, and the possible residual tensile stress.

Dutta, S.↗
NASA NTRS1979

Method of purifying metallurgical grade silicon employing reduced pressure atmospheric control

A method in which a quartz tube is charged with chunks of metallurgical grade silicon and/or a mixture of such chunks and high purity quartz sand, and impurities from a class including aluminum, boron, as well as certain transition metals including nickel, iron, and manganese is described. The tube is then evacuated and heated to a temperature within a range of 800 C to 1400 C. A stream of gas comprising a reactant, such as silicon tetrafluoride, is continuously delivered at low pressures through the charge for causing a metathetical reaction of impurities of the silicon and the reactant to occur for forming a volatile halide and leaving a residue of silicon of an improved purity. The reactant which included carbon monoxide gas and impurities such as iron and nickel react to form volatile carbonyls.

Ingle, W. M.↗
NASA NTRS1979

On evaluating clustering procedures for use in classification

The problem of evaluating clustering algorithms and their respective computer programs for use in a preprocessing step for classification is addressed. In clustering for classification the probability of correct classification is suggested as the ultimate measure of accuracy on training data. A means of implementing this criterion and a measure of cluster purity are discussed. Examples are given. A procedure for cluster labeling that is based on cluster purity and sample size is presented.

Pore, M. D.↗
NASA NTRS1980

The preparation of calcium superoxide in a flowing gas stream and fluidized bed

Superoxides can be used as sources of chemically stored oxygen in emergency breathing apparatus. The work reported here describes the use of a low-pressure nitrogen gas sweep through the reactant bed, for temperature control and water vapor removal. For a given set of gas temperature, bed thickness, and reaction time values, the highest purity calcium superoxide, Ca(O2)2, was obtained at the highest space velocity of the nitrogen gas sweep. The purity of the product was further increased by flow conditions that resulted in the fluidization of the reactant bed. However, scale-up of the low-pressure fluidized bed process was limited to the formation of agglomerates of reactant particles, which hindered thermal control by the flowing gas stream. A radiofrequency flow discharge inside the reaction chamber prevented agglomeration, presumably by dissipation of the static charges on the fluidized particles.

Wood, P. C.↗
NASA NTRS1982

Low-Waste Purification of Silicon

Ultra-high-purity silicon required for solar cells, transistors and integrated circuits can be produced from metallurgical grade silicon by formation and pyrolysis of silane gas in continuous-flow process that maximizes product purity with minimum amount of equipment. Integrated process recycles unreacted and byproduct materials, minimizing material losses and simplifying waste disposal. Ensures effective removal of impurities, including boron.

Breneman, W. C.↗
NASA NTRS1981

Silane pyrolysis in a free-space reactor

The Union Carbide process for producing silicon for photovoltaic applications proceeds via high purity silane as an intermediate. Decomposition of silane is accomplished in a freespace reactor which utilizes recirculating product hydrogen and silicon to transfer energy from a heated wall to an entering silane jet. Reaction occurs away from the wall, minimizing problems with wall deposition and contamination. A series of long duration and throughput tests has proven the feasibility of this concept. High purity powder can be produced at flows up to 4.5 kg/hr (10 lb/hr) in a 0.2 m (8 inch) diameter reactor with better than 99.99% conversion efficiency. This work is funded by DOE under JPL's Low Cost Solar Array (LSA) program.

Lay, J. R.↗
NASA NTRS1982

Advances in large-diameter liquid encapsulated Czochralski GaAs

The purity, crystalline perfection, and electrical properties of n- and p-type GaAs crystals grown by the liquid encapsulated Czochralski (LEC) technique are evaluated. The determination of the dislocation density, incidence of twinning, microstructure, background purity, mobility, and minority carrier diffusion length is included. The properties of the LEC GaAs crystals are generally comparable to, if not superior to those of small-diameter GaAs material grown by conventional bulk growth techniques. As a result, LEC GaAs is suitable for application to minority carrier devices requiring high-quality and large-area substrates.

Chen, R. T.↗