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At least 199 records · Page 11

Photodiode-Coupled Light Modulator

Absorption of one light beam controls transmission of another. High-performance monolithic light modulator comprised of p-doped/intrinsic/n-doped (PIN) GaAs photodiode grown directly over InAs/GaAs PIN multiple-quantum-well (MQW) diode. Photodiode-coupled multiple-quantum-well modulator includes advanced semi-conductor microstructures enhancing electro-optical properties. Using standard lithographic and etching techniques for defining picture elements, structures fabricated into two-dimensional arrays for use as spatial light modulators.

Maserjian, Joseph↗

A comparison of imaging methods for use in an array biosensor

An array biosensor has been developed which uses an actively-cooled, charge-coupled device (CCD) imager. In an effort to save money and space, a complementary metal-oxide semiconductor (CMOS) camera and photodiode were tested as replacements for the cooled CCD imager. Different concentrations of CY5 fluorescent dye in glycerol were imaged using the three different detection systems with the same imaging optics. Signal discrimination above noise was compared for each of the three systems.

Evaluation Studies↗

Time-delay-and-integration charge coupled devices /CCDs/ applied to the Thematic Mapper

The visible focal plane of the Thematic Mapper, the next generation sensor system for application to earth resource survey, uses complex hybrid assembly techniques to interface silicon photodiodes to JFET preamplifiers. This complexity can be ameliorated by the use of a 20-channel time-delay-and-integration (TDI) CCD with nine stages of integration per channel. By going to a CCD array operating in a TDI mode, over 700 individual op amps can be replaced with only 48 op amps. Smooth spectral response and 70% quantum efficiency have been provided by using doped tin oxide gates over the imaging region.

Thompson, L. L.↗

Graphene Transparent Conductive Electrodes for Next- Generation Microshutter Arrays

Graphene is a single atomic layer of graphite. It is optically transparent and has high electron mobility, and thus has great potential to make transparent conductive electrodes. This invention contributes towards the development of graphene transparent conductive electrodes for next-generation microshutter arrays. The original design for the electrodes of the next generation of microshutters uses indium-tin-oxide (ITO) as the electrode material. ITO is widely used in NASA flight missions. The optical transparency of ITO is limited, and the material is brittle. Also, ITO has been getting more expensive in recent years. The objective of the invention is to develop a graphene transparent conductive electrode that will replace ITO. An exfoliation procedure was developed to make graphene out of graphite crystals. In addition, large areas of single-layer graphene were produced using low-pressure chemical vapor deposition (LPCVD) with high optical transparency. A special graphene transport procedure was developed for transferring graphene from copper substrates to arbitrary substrates. The concept is to grow large-size graphene sheets using the LPCVD system through chemical reaction, transfer the graphene film to a substrate, dope graphene to reduce the sheet resistance, and pattern the film to the dimension of the electrodes in the microshutter array. Graphene transparent conductive electrodes are expected to have a transparency of 97.7%. This covers the electromagnetic spectrum from UV to IR. In comparison, ITO electrodes currently used in microshutter arrays have 85% transparency in mid-IR, and suffer from dramatic transparency drop at a wavelength of near-IR or shorter. Thus, graphene also has potential application as transparent conductive electrodes for Schottky photodiodes in the UV region.

Li, Mary↗

A CCD scanned (Hg, Cd)Te array for earth viewing applications

A 9 channel demonstration of 10 micrometer photoconductive mercury cadmium telluride detector array, bipolar preamplifiers, and a Si CCD multiplexer, integrated into a focal plane assembly and operating at 105 K and at 17 Hz is reported. The result of a direct coupling experiment between a 5-micrometer photovoltaic mercury cadmium telluride photodiode and a CCD is revealed. No appreciable degradation in the signal-to-noise ratio was experienced.

Iwasa, S.↗

Quantum efficiency of opaque CsI photocathodes with channel electron multiplier arrays in the extreme and far ultraviolet

The arrays are overcoated with a CsI photocathode in the VUV. The measurements are part of the development program for the Extreme Ultraviolet Explorer. Monochromatic light from a hollow cathode discharge source passing through a McPherson grazing incidence monochromator is used to illuminate the CsI photocathode. The beam diameter is kept small (approximately 2 mm) to confine it within the individual thickness strips. A bias grid is used to produce a 50-V/mm electric field to guarantee collection of all photoelectrons emitted by the CEMA (channel electron multiplier array) webbing. The CEMAs are operated with a gain of 2-3 x 10 to the 6th and are moderately saturated. A channeltron secondary transfer standard is used to determine the absolute QE in the EUV, whereas an NBS calibrated windowed photodiode is used to measure the FUV absolute QE. It is noted that the CsI gives a factor of 3 increase in the QE in the EUV and a factor of 50-5000 in the FUV.

Martin, C.↗

Si(1-x)Ge(x)/Si Infrared Photodiodes

Cutoff wavelengths depend on x and also adjusted somewhat via reverse bias. Si1-xGex photodiodes with cutoff wavelengths in and beyond practically important range of 8 to 12 micrometers made by molecular-beam epitaxy. Compatible (in terms of fabrication processes) with silicon readout circuitry, exhibit long-term stability, manufactured with sufficient uniformity for use in focal-plane arrays; and operate at temperatures approximately greater than 65 K, for which temperatures small, portable refrigerators available.

Lin, True-Lon↗

Focal plane array optical proximity sensor

An optical proximity sensor for optically detecting an object within a predetermined detection volume is described. More specifically, an optical proximity sensor is disclosed having an illuminator assembly including lens and a plurality of light-emitting diodes located at first predetermined positions along the focal plane of the illuminator lens. A detector assembly including a detector lens and a plurality of photodiodes located at second predetermined positions along the focal plane of the detector lens is also provided. The two lenses are spaced apart a predetermined distance in order to define a predetermined detection volume. Additionally, a combination of optical proximity sensors, according to the invention, is disclosed wherein the sensors can be used in conjunction with a vehicle to provide a safety system for warning an operator when an object is within a volume defined by the proximity sensor combination.

Johnston, A. R.↗

Gratings and Random Reflectors for Near-Infrared PIN Diodes

Crossed diffraction gratings and random reflectors have been proposed as means to increase the quantum efficiencies of InGaAs/InP positive/intrinsic/ negative (PIN) diodes designed to operate as near-infrared photodetectors. The proposal is meant especially to apply to focal-plane imaging arrays of such photodetectors to be used for near-infrared imaging. A further increase in quantum efficiency near the short-wavelength limit of the near-infrared spectrum of such a photodetector array could be effected by removing the InP substrate of the array. The use of crossed diffraction gratings and random reflectors as optical devices for increasing the quantum efficiencies of quantum-well infrared photodetectors (QWIPs) was discussed in several prior NASA Tech Briefs articles. While the optical effects of crossed gratings and random reflectors as applied to PIN photodiodes would be similar to those of crossed gratings and random reflectors as applied to QWIPs, the physical mechanisms by which these optical effects would enhance efficiency differ between the PIN-photodiode and QWIP cases: In a QWIP, the multiple-quantum-well layers are typically oriented parallel to the focal plane and therefore perpendicular or nearly perpendicular to the direction of incidence of infrared light. By virtue of the applicable quantum selection rules, light polarized parallel to the focal plane (as normally incident light is) cannot excite charge carriers and, hence, cannot be detected. A pair of crossed gratings or a random reflector scatters normally or nearly normally incident light so that a significant portion of it attains a component of polarization normal to the focal plane and, hence, can excite charge carriers. A pair of crossed gratings or a random reflector on a PIN photodiode would also scatter light into directions away from the perpendicular to the focal plane. However, in this case, the reason for redirecting light away from the perpendicular is to increase the length of the optical path through the detector to increase the probability of absorption of photons and thereby increase the resulting excitation of charge carriers. A pair of crossed gratings or a random reflector according to the proposal would be fabricated as an integral part of photodetector structure on the face opposite the focal plane (see figure). In the presence of crossed gratings, light would make four passes through the device before departing. In the presence of a random reflector, a significant portion of the light would make more than four passes: After each bounce, light would be scattered at a different random angle, and would have a chance to escape only when it was reflected, relative to the normal, at an angle less than the critical angle for total internal reflection. Given the indices of refraction of the photodiode materials, this angle would be about 17 . This amounts to a very narrow cone for escape of trapped light.

Gunapala, Sarath↗

Update on Linear Mode Photon Counting with the HgCdTe Linear Mode Avalanche Photodiode

The behavior of the gain-voltage characteristic of the mid-wavelength infrared cutoff HgCdTe linear mode avalanche photodiode (e-APD) is discussed both experimentally and theoretically as a function of the width of the multiplication region. Data are shown that demonstrate a strong dependence of the gain at a given bias voltage on the width of the n− gain region. Geometrical and fundamental theoretical models are examined to explain this behavior. The geometrical model takes into account the gain-dependent optical fill factor of the cylindrical APD. The theoretical model is based on the ballistic ionization model being developed for the HgCdTe APD. It is concluded that the fundamental theoretical explanation is the dominant effect. A model is developed that combines both the geometrical and fundamental effects. The model also takes into account the effect of the varying multiplication width in the low bias region of the gain-voltage curve. It is concluded that the lower than expected gain seen in the first 2 × 8 HgCdTe linear mode photon counting APD arrays, and higher excess noise factor, was very likely due to the larger than typical multiplication region length in the photon counting APD pixel design. The implications of these effects on device photon counting performance are discussed.

HgCdTe↗

Branching Ratios for The Radiometric Calibration of EUNIS-2012

The Extreme Ultraviolet Normal Incidence Spectrograph (EUNIS) sounding rocket instrument is a two-channel imaging spectrograph that observes the solar corona and transition region with high spectral resolution and a rapid cadence made possible by unprecedented sensitivity. The upcoming flight will incorporate a new wavelength channel covering the range 524-630 Angstroms, the previously-flown 300-370 Angstroms channel, and the first flight demonstration of cooled active pixel sensor (APS) arrays. The new 524-630 Angstrom channel incorporates a Toroidal Varied Line Space (TVLS) grating coated with B4C/Ir, providing broad spectral coverage and a wide temperature range of 0.025 to 10 MK. Absolute radiometric calibration of the two channels is being performed using a hollow cathode discharge lamp and NIST-calibrated AXUV-100G photodiode. Laboratory observations of He I 584 Angstroms and He II 304 Angstroms provide absolute radiometric calibrations of the two channels at those two respective wavelengths by using the AXUV photodiode as a transfer standard. The spectral responsivity is being determined by observing line pairs with a common upper state in the spectra of Ne I-III and Ar II-III. Calculations of A-values for the observed branching ratios are in progress.

Daw, Adrian N.↗

Hemispherical Optical Dome for Underwater Communication

For many years, acoustic systems have been used as the primary method for underwater communication; however, the data transfer rate of such systems is low because sound propagates slowly through the water. A higher throughput can be achieved using visible light to transmit data underwater. The first issue with using this approach is that there is generally a large loss of the light signal due to scattering and absorption in water even though there is an optimal wavelength for transmission in the blue or green wavelengths of the visible spectrum. The second issue is that a simple system consisting only of a highly directional source transmitter and small optical detector receiver has a very narrow field of view. The goal of this project is to improve an optical, underwater communication system by increasing the effective field of view of the receiving optics. To this end, we make two changes to the simple system: (1) An optical dome was added near the receiver. An array of lenses is placed radially on the surface of the dome, reminiscent of the compound eye of an insect. The lenses make the source and detector planes conjugate, and each lens adds a new region of the source plane to the instrument's total field of view. (2) The receiver was expanded to include multiple photodiodes. With these two changes, the receiver has much more tolerance to misalignments (in position and angle) of the transmitter.Two versions of the optical dome (with 6 and 8 diameters) were designed using the CREO CAD software and modeled using the CODE V optical design software. A series of these transparent hemispherical domes, with both design diameters, were manufactured using a 5-axis mill. The prototype was then retrofitted with lenses and compared with the computer-generated model to demonstrate the effectiveness of this solution. This work shows the dome design improves the optical field of view of the underwater communication system considerably. Furthermore, with the experimental test results, a geometric optimization model was derived providing insights to the design performance limits.

Design↗

Hemispherical Optical Dome for Underwater Communication

For many years, acoustic systems have been used as the primary method for underwater communication; however, the data transfer rate of such systems is low because sound propagates slowly through the water. A higher throughput can be achieved using visible light to transmit data underwater. The first issue with using this approach is that there is generally a large loss of the light signal due to scattering and absorption in water even though there is an optimal wavelength for transmission in the blue or green wavelengths of the visible spectrum. The second issue is that a simple system consisting only of a highly directional source/transmitter and small optical detector/receiver has a very narrow field of view. The goal of this project is to improve an optical, underwater communication system by increasing the effective field of view of the receiving optics. To this end, we make two changes to the simple system: (1) An optical dome was added near the receiver. An array of lenses is placed radially on the surface of the dome, reminiscent of the compound eye of an insect. The lenses make the source and detector planes conjugate, and each lens adds a new region of the source plane to the instrument's total field of view. (2) The receiver was expanded to include multiple photodiodes. With these two changes, the receiver has much more tolerance to misalignments (in position and angle) of the transmitter.Two versions of the optical dome (with 6 and 8 diameters) were designed using the CREO CAD software and modeled using the CODE V optical design software. A series of these transparent hemispherical domes, with both design diameters, were manufactured using a 5-axis mill. The prototype was then retrofitted with lenses and compared with the computer-generated model to demonstrate the effectiveness of this solution. This work shows the dome design improves the optical field of view of the underwater communication system considerably. Furthermore, with the experimental test results, a geometric optimization model was derived providing insights to the design performance limits.

Underwater↗

Optical radiation measurements II; Proceedings of the Meeting, Orlando, FL, Mar. 27, 28, 1989

The present conference discusses topics in the characterization of imaging radiometers, laboratory instrumentation, field and spacecraft instrumentation, and quantum and thermal standard detectors. Attention is given to UV radiometric imaging, dual-color radiometer imagery, a novel diode-array radiometer, a novel reference spectrophotometer, radiance calibration of spherical integrators, instrumentation for measurement of spectral goniometric reflectance, and a real-time IR background discrimination radiometer. Also discussed are a multichannel radiometer for atmosphere optical property measurements, the UV spectroradiometric output of a turbojet, characterizations of the Earth Radiation Budget Experiment scanning radiometers, total-radiation thermometry, future directions in Si photodiode self-calibration, and radiometric quality Ge photodiodes.

Palmer, James M.↗

Atomic Oxygen Fluence Monitor

This innovation enables a means for actively measuring atomic oxygen fluence (accumulated atoms of atomic oxygen per area) that has impinged upon spacecraft surfaces. Telemetered data from the device provides spacecraft designers, researchers, and mission managers with real-time measurement of atomic oxygen fluence, which is useful for prediction of the durability of spacecraft materials and components. The innovation is a compact fluence measuring device that allows in-space measurement and transmittance of measured atomic oxygen fluence as a function of time based on atomic oxygen erosion yields (the erosion yield of a material is the volume of material that is oxidized per incident oxygen atom) of materials that have been measured in low Earth orbit. It has a linear electrical response to atomic oxygen fluence, and is capable of measuring high atomic oxygen fluences (up to >10(exp 22) atoms/sq cm), which are representative of multi-year low-Earth orbital missions (such as the International Space Station). The durability or remaining structural lifetime of solar arrays that consist of polymer blankets on which the solar cells are attached can be predicted if one knows the atomic oxygen fluence that the solar array blanket has been exposed to. In addition, numerous organizations that launch space experiments into low-Earth orbit want to know the accumulated atomic oxygen fluence that their materials or components have been exposed to. The device is based on the erosion yield of pyrolytic graphite. It uses two 12deg inclined wedges of graphite that are over a grit-blasted fused silica window covering a photodiode. As the wedges erode, a greater area of solar illumination reaches the photodiode. A reference photodiode is also used that receives unobstructed solar illumination and is oriented in the same direction as the pyrolytic graphite covered photodiode. The short-circuit current from the photodiodes is measured and either sent to an onboard data logger, or transmitted to a receiving station on Earth. By comparison of the short-circuit currents from the fluence-measuring photodiode and the reference photodiode, one can compute the accumulated atomic oxygen fluence arriving in the direction that the fluence monitor is pointing. The device produces a signal that is linear with atomic oxygen fluence using a material whose atomic oxygen erosion yield has been measured over a period of several years in low-Earth orbit.

Banks, Bruce A.↗

A Highly Sensitive Multi-Element HgCdTe E-APD Detector for IPDA Lidar Applications

An HgCdTe electron avalanche photodiode (e-APD) detector has been developed for lidar receivers, one application of which is integrated path differential absorption lidar measurements of such atmospheric trace gases as CO2 and CH4. The HgCdTe APD has a wide, visible to mid-wave-infrared, spectral response, high dynamic range, substantially improved sensitivity, and an expected improvement in operational lifetime. A demonstration sensor-chip assembly consisting of a 4.3 lm cutoff HgCdTe 4 9 4 APD detector array with 80 micrometer pitch pixels and a custom complementary metal-oxide-semiconductor readout integrated circuit was developed. For one typical array the APD gain was 654 at 12 V with corresponding gain normalized dark currents ranging from 1.2 fA to 3.2 fA. The 4 9 4 detector system was characterized at 77 K with a 1.55 micrometer wavelength, 1 microsecond wide, laser pulse. The measured unit gain detector photon conversion efficiency was 91.1%. At 11 V bias the mean measured APD gain at 77 K was 307.8 with sigma/mean uniformity of 1.23%. The average, noise-bandwidth normalized, system noise-equivalent power (NEP) was 1.04 fW/Hz(exp 1/2) with a sigma/mean of 3.8%. The measured, electronics-limited, bandwidth of 6.8 MHz was more than adequate for 1 microsecond pulse detection. The system had an NEP (3 MHz) of 0.4 fW/Hz(exp 1/2) at 12 V APD bias and a linear dynamic range close to 1000. A gain-independent quantum-limited SNR of 80% of full theoretical was indicative of a gain-independent excess noise factor very close to 1.0 and the expected APD mode quantum efficiency.

NEP↗

Hybrid AlGaN-SiC Avalanche Photodiode for Deep-UV Photon Detection

The proposed device is capable of counting ultraviolet (UV) photons, is compatible for inclusion into space instruments, and has applications as deep- UV detectors for calibration systems, curing systems, and crack detection. The device is based on a Separate Absorption and Charge Multiplication (SACM) structure. It is based on aluminum gallium nitride (AlGaN) absorber on a silicon carbide APD (avalanche photodiode). The AlGaN layer absorbs incident UV photons and injects photogenerated carriers into an underlying SiC APD that is operated in Geiger mode and provides current multiplication via avalanche breakdown. The solid-state detector is capable of sensing 100-to-365-nanometer wavelength radiation at a flux level as low as 6 photons/pixel/s. Advantages include, visible-light blindness, operation in harsh environments (e.g., high temperatures), deep-UV detection response, high gain, and Geiger mode operation at low voltage. Furthermore, the device can also be designed in array formats, e.g., linear arrays or 2D arrays (micropixels inside a superpixel).

Aslam, Shahid↗

Photodetector Arrays for Multicolor Visible/Infrared Imaging

Monolithic focal-plane arrays of photodetectors capable of imaging the same scenes simultaneously in multiple wavelength bands in the visible and infrared spectral regions have been proposed. In prior visible/infrared imaging systems, it has been standard practice to use separate optical trains to form images in visible and infrared wavelength bands on separate visibleand infrared-photodetector arrays. Because the proposal would enable the detection of images in multiple wavelength bands on the same focal plane, the proposal would make it unnecessary to use multiple optical trains. Hence, multispectral imaging systems could be made more compact and the difficulties of aligning multiple optical trains would be eliminated. Each pixel in an array according to the proposal would contain stacks of several photodetectors. The proposal is a logical extension of prior concepts of arrays of stacked photodetectors for imaging in two or three wavelength bands. For example, such an array was described in Three-Color Focal-Plane Array of Infrared QWIPs (NPO-20683), NASA Tech Briefs, Vol. 24, No. 5 (May 2000), page 26a. In one proposed design, (see figure), each pixel would be divided into four subpixels, one being dedicated to a visible- and-near-infrared (V) band, one to a combination of the V band and a verylong- wavelength infrared (VLWIR) band, one to a combination of the V band and a long-wavelength infrared (LWIR) band, and one to a combination of the V band and a medium-wavelength infrared (MWIR) band. For this purpose, each subpixel would include a GaAs-based positive/intrinsic/negative (PIN) photodiode for detection in the V band stacked with three quantum-well infrared photodetectors (QWIPs), each optimized for one of the aforementioned infrared bands. The stacks of photodetectors in all the subpixels would be identical except for the electrical connections, which would be configured to activate the various wavelengthband combinations.

Gunapala, Sarath↗