Search NASA⌕ Search

SEARCH · Search NASA

Results for “SILICON COMPOUNDS”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 199 records · Page 11

Thermo-Poro-Mechanical Modeling of RTV Intumescence

Room temperature vulcanizing (RTV) silicone is a high-temperature adhesive used as a gap-filler between heatshield tiles in numerous entry missions. Its propensity to intumesce, or swell upon exposure to heat, is a well-known effect that needs to be carefully quantified during design. At tile interfaces of charring ablators, intumescence, combined with differential recession, could cause the gap filler to protrude past the ablator outer mold line, forming a “fence”. Fencing can in turn cause transition to turbulence of the flow wetting the heat shield, leading to augmented surface heating. Recent experiments conducted at the Plasmatron X facility, the high enthalpy wind tunnel of the Center for Hypersonics and Entry Systems Studies, have shown prominent fencing of RTV gap fillers in PICA, under both nitrogen and air plasmas. Similar observations are well known in the arcjet literature. Further experiments under controlled environment, performed using in situ X-ray micro-computed tomography (micro-CT) at the Advanced Light Source (ALS), have shown heating rate-dependent swelling and shrinkage of RTV during pyrolysis. To simulate RTV intumescence, a novel model was introduced in the Porous Materials Analysis Toolbox based on OpenFOAM, PATO, to account for pore-pressure buildup within both closed- and open-pores. The governing equation for the thermo-poro-mechanical response were developed, assuming linear elasticity for the charring silicone. A new multi-pyrolysis model that tracks non-monotonic advancement of material properties with pyrolysis was proposed. This model addresses the limitations of state-of-the-art ablator models to capture the different stages of thermal degradation and coupled thermomechanics. Swelling of RTV was simulated using the new thermo-poro-mechanical model and compared against in situ micro-CT data. Results showed good agreement in intumescence height and temperature profiles at all heating rates, indicating that the key factor contributing to RTV swelling is the internal pressure build-up within closed- and open-pores. As RTV is cured into a soft (rubbery) compound with low-porosity and permeability, initial temperature increase and pyrolysis gas production cause a significant increase of internal pressure, causing a pronounced volume growth. As thermal degradation progresses, rigidization of the silicone occurs due to char hardening which counteract volume shrinkage after gas pressure relief. Overall, our model shows that accounting for changes in properties such porosity, permeability and key thermomechanical coefficients is crucial for capturing the RTV volume change during ablation and enable a predictive capability for heatshield tile interface response. A plan for future calibration of thermomechanical properties evolution during degradation is discussed, as a key next step to close the new model.

silicone intumescence↗

Organic contamination analysis: High resolution mass spectrometric analysis of surface organics on selected areas of Surveyor 3

The mirror and middle shroud were extracted for organics by washing the surfaces with solvents. The techniques are discussed. Ion microprobe analyses of the primarily atomic species are presented. The sources of the organic contaminants are: (1) hydrocarbons from lubricating oils and general terrestrial contamination, (2) dioctyl phthalate, probably from polyethylene bagging material (the plasticizer), (3) carboxylic acids from decomposition of grease and general terrestrial contamination, (4) silicones from sources such as lubricating oil, (5) outgassing of electronics and plasticizer, (6) vinyl alcohol and styrene copolymer, probably from electronic insulation, and (7) nitrogenous compounds from the lunar module and possibly Surveyor 3 engine exhaust.

Simoneit, B. R.↗

Improved Cure-in-Place Silicone Adhesives

Two improved cure-in-place silicone-elastomer-based adhesives have low thermal expansion and low thermal conductivity. Adhesives are flexible at low temperature and withstand high temperatures without disintegrating. New ablative compounds were initially developed for in-flight repair of insulating tile on Space Shuttle orbiter. Could find use in other applications requiring high-performance adhesives, such as sealants for solar collectors.

Blevins, C. E.↗

Fire Resistant, Moisture Barrier Membrane

A waterproof and breathable, fire-resistant laminate is provided for use in tents, garments, shoes, and covers, especially in industrial, military and emergency situations. The laminate permits water vapor evaporation while simultaneously preventing liquid water penetration. Further, the laminate is fire-resistant and significantly reduces the danger of toxic compound production when exposed to flame or other high heat source. The laminate may be applied to a variety of substrates and is comprised of a silicone rubber and plurality of fire-resistant, inherently thermally-stable polyimide particles.

St.Clair, Terry L.↗

Fire Resistant, Moisture Barrier Membrane

A waterproof and breathable, fire-resistant laminate is provided for use in tents, garments, shoes, and covers, especially in industrial, military and emergency situations. The laminate permits water vapor evaporation while simultaneously preventing liquid water penetration. Further, the laminate is fire-resistant and significantly reduces the danger of toxic compound production when exposed to flame or other high heat source. The laminate may be applied to a variety of substrates and is comprised of a silicone rubber and plurality of fire-resistant, inherently thermally-stable polyimide particles.

St.Clair, Terry L.↗

Economic analysis of crystal growth in space

Many advanced electronic technologies and devices for the 1980's are based on sophisticated compound single crystals, i.e. ceramic oxides and compound semiconductors. Space processing of these electronic crystals with maximum perfection, purity, and size is suggested. No ecomonic or technical justification was found for the growth of silicon single crystals for solid state electronic devices in space.

Ulrich, D. R.↗

Nanotip Carpets as Antireflection Surfaces

Carpet-like random arrays of metal-coated silicon nanotips have been shown to be effective as antireflection surfaces. Now undergoing development for incorporation into Sun sensors that would provide guidance for robotic exploratory vehicles on Mars, nanotip carpets of this type could also have many uses on Earth as antireflection surfaces in instruments that handle or detect ultraviolet, visible, or infrared light. In the original Sun-sensor application, what is required is an array of 50-micron-diameter apertures on what is otherwise an opaque, minimally reflective surface, as needed to implement a miniature multiple-pinhole camera. The process for fabrication of an antireflection nanotip carpet for this application (see Figure 1) includes, and goes somewhat beyond, the process described in A New Process for Fabricating Random Silicon Nanotips (NPO-40123), NASA Tech Briefs, Vol. 28, No. 1 (November 2004), page 62. In the first step, which is not part of the previously reported process, photolithography is performed to deposit etch masks to define the 50-micron apertures on a silicon substrate. In the second step, which is part of the previously reported process, the non-masked silicon area between the apertures is subjected to reactive ion etching (RIE) under a special combination of conditions that results in the growth of fluorine-based compounds in randomly distributed formations, known in the art as "polymer RIE grass," that have dimensions of the order of microns. The polymer RIE grass formations serve as microscopic etch masks during the next step, in which deep reactive ion etching (DRIE) is performed. What remains after DRIE is the carpet of nano - tips, which are high-aspect-ratio peaks, the tips of which have radii of the order of nanometers. Next, the nanotip array is evaporatively coated with Cr/Au to enhance the absorption of light (more specifically, infrared light in the Sun-sensor application). The photoresist etch masks protecting the apertures are then removed by dipping the substrate into acetone. Finally, for the Sun-sensor application, the back surface of the substrate is coated with a 57-nm-thick layer of Cr for attenuation of sunlight.

Bae, Youngsam↗

Lattice Thermal Conductivity from Atomistic Simulations: ZrB2 and HfB2

Ultra high temperature ceramics (UHTC) including ZrB2 and HfB2 have a number of properties that make them attractive for applications in extreme environments. One such property is their high thermal conductivity. Computational modeling of these materials will facilitate understanding of fundamental mechanisms, elucidate structure-property relationships, and ultimately accelerate the materials design cycle. Progress in computational modeling of UHTCs however has been limited in part due to the absence of suitable interatomic potentials. Recently, we developed Tersoff style parameterizations of such potentials for both ZrB2 and HfB2 appropriate for atomistic simulations. As an application, Green-Kubo molecular dynamics simulations were performed to evaluate the lattice thermal conductivity for single crystals of ZrB2 and HfB2. The atomic mass difference in these binary compounds leads to oscillations in the time correlation function of the heat current, in contrast to the more typical monotonic decay seen in monoatomic materials such as Silicon, for example. Results at room temperature and at elevated temperatures will be reported.

Lawson, John W.↗

Lattice Thermal Conductivity of Ultra High Temperature Ceramics (UHTC) ZrB2 and HfB2 from Atomistic Simulations

Ultra high temperature ceramics (UHTC) including ZrB2 and HfB2 have a number of properties that make them attractive for applications in extreme environments. One such property is their high thermal conductivity. Computational modeling of these materials will facilitate understanding of fundamental mechanisms, elucidate structure-property relationships, and ultimately accelerate the materials design cycle. Progress in computational modeling of UHTCs however has been limited in part due to the absence of suitable interatomic potentials. Recently, we developed Tersoff style parameterizations of such potentials for both ZrB2 and HfB2 appropriate for atomistic simulations. As an application, Green-Kubo molecular dynamics simulations were performed to evaluate the lattice thermal conductivity for single crystals of ZrB2 and HfB2. The atomic mass difference in these binary compounds leads to oscillations in the time correlation function of the heat current, in contrast to the more typical monotonic decay seen in monoatomic materials such as Silicon, for example. Results at room temperature and at elevated temperatures will be reported.

Lawson, John W.↗

A New Process for Fabricating Random Silicon Nanotips

An improved process for the fabrication of random arrays of silicon nanotips has been demonstrated to be feasible. Relative to other such processes, this process offers advantages of low cost and simplicity. Moreover, this process can readily be combined with other processes used to fabricate integrated circuits and other monolithic silicon structures. Arrays of silicon nanotips are subjects of research and development efforts directed toward utilizing them as field emitters in flat-panel displays, vacuum microelectronics, and microwave devices. Other silicon-nanotip-fabrication processes developed thus far predominantly include lithography, etching, and/or elaborate deposition steps followed by oxide sharpening steps and are both process intensive as well as expensive. In addition to being cheaper and simpler, the present process can efficiently produce silicon nanotips that range in height from a few microns to several tens of microns and are distributed over large areas. The process mentioned here can be summarized as consisting of (1) the growth of micro-etch masks on a silicon substrate, followed by (2) etching away of the masks, along with some of the substrate, to make an array of sharp tips. In the first step of the process, a cleaned silicon substrate is subjected to reactive ion etching (RIE) in a certain mixture of oxygen and carbon tetrafluoride under radio-frequency excitation. This process step results in the growth of fluorine based compounds in the form of stumps randomly distributed on the substrate. These stumps are known in the art as polymer RIE grass. The dimensions of these stumps are of the order of hundreds of nanometers, the exact values depending on process time and gas composition. The areal density of the stumps decreases with increasing process time as they grow and merge with neighboring stumps. These stumps constitute the micro-etch masks for the next step of the process. In the second step of the process, the substrate covered with the microetch masks is subjected to deep reactive ion etching (DRIE) process, which consists of cycles of reactive ion etching alternating with passivation (the Bosch process). The gas used in the etching substeps is sulfur hexafluoride (SF6); the gas used in the passivation substeps is octafluorocyclobutane (C4F8). The portions of the substrate directly under the RIE grass stubs are etched more slowly than are the portions between the stubs. Hence, what remains at the end of the process, after the stubs and parts of the substrate have been etched away, are silicon spikes where the stubs were (see figure). In a variation of the process, one starts with a silicon or silicon-on-insulator substrate with the intent to etch through the full thickness of the substrate. That is to say, one chooses the thickness so that the DRIE step releases individual nanotips. Such individual silicon nanotips may have utility as microscopic probes in biomedical applications.

Manohara, Harish↗

TEM Analysis of Diffusion-Bonded Silicon Carbide Ceramics Joined Using Metallic Interlayers

SiC fiber-bonded ceramics (SA-Tyrannohex: SA-THX) diffusion-bonded with TiCu metallic interlayers were investigated. Thin samples of the ceramics were prepared with a focused ion beam (FIB) and the interfacial microstructure of the prepared samples was studied by transmission electron microscopy (TEM) and scanning TEM (STEM). In addition to conventional microstructure observation, for detailed analysis of reaction compounds in diffusion-bonded area, we performed STEM-EDS measurements and selected area electron diffraction (SAD) experiments. The TEM and STEM experiments revealed the diffusion-bonded area was composed of only one reaction layer, which was characterized by TiC precipitates in Cu-Si compound matrix. This reaction layer was in good contact with the SA-THX substrates, and it is concluded that the joint structure led to the excellent bonding strength.

Ceramics↗

Aluminum Alloy and Article Cast Therefrom

A cast article from an aluminum alloy, which has improved mechanical properties at elevated temperatures, has the following composition in weight percent: Silicon 14 - 25.0, Copper 5.5 - 8.0, Iron 0.05 - 1.2, Magnesium 0.5 - 1.5, Nickel 0.05 - 0.9, Manganese 0.05 - 1.0, Titanium 0.05 - 1.2, Zirconium 0.05 - 1.2, Vanadium 0.05 - 1.2, Zinc 0.05 - 0.9, Phosphorus 0.001 - 0.1, and the balance is Aluminum, wherein the silicon-to-magnesium ratio is 10 - 25, and the copper-to-magnesium ratio is 4 - 15. The aluminum alloy contains a simultaneous dispersion of three types of Al3X compound particles (X=Ti, V, Zr) having a LI2, crystal structure, and their lattice parameters are coherent to the aluminum matrix lattice. A process for producing this cast article is also disclosed, as well as a metal matrix composite, which includes the aluminum alloy serving as a matrix and containing up to about 60% by volume of a secondary filler material.

Lee, Jonathan A.↗

High Strength Aluminum Alloy For High Temperature Applications

A cast article from an aluminum alloy has improved mechanical properties at elevated temperatures. The cast article has the following composition in weight percent: Silicon 6.0-25.0, Copper 5.0-8.0, Iron 0.05-1.2, Magnesium 0.5-1.5, Nickel 0.05-0.9, Manganese 0.05-1.2, Titanium 0.05-1.2, Zirconium 0.05-1.2, Vanadium 0.05-1.2, Zinc 0.05-0.9, Strontium 0.001-0.1, Phosphorus 0.001-0.1, and the balance is Aluminum, wherein the silicon-to-magnesium ratio is 10-25, and the copper-to-magnesium ratio is 4-15. The aluminum alloy contains a simultaneous dispersion of three types of Al3X compound particles (X=Ti, V, Zr) having a LI2 crystal structure, and their lattice parameters are coherent to the aluminum matrix lattice. A process for producing this cast article is also disclosed, as well as a metal matrix composite, which includes the aluminum alloy serving as a matrix containing up to about 60% by volume of a secondary filler material.

Jonathan A Lee↗

Application of surface analysis to solve problems of wear

Results are presented for the use of surface analytical tools including field ion microscopy, Auger emission spectroscopy analysis (AES), cylindrical mirror Auger analysis and X-ray photoelectron spectroscopy (XPS). Data from the field ion microscope reveal adhesive transfer (wear) at the atomic level with the formation of surface compounds not found in the bulk, and AES reveals that this transfer will occur even in the presence of surface oxides. Both AES and XPS reveal that in abrasive wear with silicon carbide and diamond contacting the transition metals, the surface and the abrasive undergo a chemical or structural change which effects wear. With silicon carbide, silicon volatilizes leaving behind a pseudo-graphitic surface and the surface of diamond is observed to graphitize.

Buckley, D. H.↗

IC Capacitors on Groups III-to-V Substrates

Oxides applied by a "spin-on" process have been used to fabricate capacitors on gallium arsenide and indium phosphide substrates: they might also be used with other compounds of elements in groups III to V of the periodic table. The III-to-V materials are attractive for integrated circuits because they offer responses potentially six times faster than silicon.

Alcorn, G. E.↗

Combustion system processes leading to corrosive deposits

Degradation of turbine engine hot gas path components by high temperature corrosion can usually be associated with deposits even though other factors may also play a significant role. The origins of the corrosive deposits are traceable to chemical reactions which take place during the combustion process. In the case of hot corrosion/sulfidation, sodium sulfate was established as the deposited corrosive agent even when none of this salt enters the engine directly. The sodium sulfate is formed during the combustion and deposition processes from compounds of sulfur contained in the fuel as low level impurities and sodium compounds, such as sodium chloride, ingested with intake air. In other turbine and power generation situations, corrosive and/or fouling deposits can result from such metals as potassium, iron, calcium, vanadium, magnesium, and silicon.

Stearns, C. A.↗

Combustion system processes leading to corrosive deposits

Degradation of turbine engine hot gas path components by high temperature corrosion can usually be associated with deposits even though other factors may also play a significant role. The origins of the corrosive deposits are traceable to chemical reactions which take place during the combustion process. In the case of hot corrosion/sulfidation, sodium sulfate was established as the deposited corrosive agent even when none of this salt enters the engine directly. The sodium sulfate is formed during the combustion and deposition processes from compounds of sulfur contained in the fuel as low level impurities and sodium compounds, such as sodium chloride, ingested with intake air. In other turbine and power generation situations, corrosive and/or fouling deposits can result from such metals as potassium, iron, calcium, vanadium, magnesium, anad silicon. Previously announced in STAR as N81-23243

Stearns, C. A.↗

Chemical analyses of provided samples

Two batches of samples were received and chemical analysis was performed of the surface and near surface regions of the samples by the surface analysis by laser ionization (SALI) method. The samples included four one-inch optics and several paint samples. The analyses emphasized surface contamination or modification. In these studies, pulsed sputtering by 7 keV Ar+ and primarily single-photon ionization (SPI) by coherent 118 nm radiation (at approximately 5 x 10(exp 5) W/cm(sup 2) were used. For two of the samples, also multiphoton ionization (MPI) at 266 nm (approximately 5 x 10(exp 11) W/cm(sup 2) was used. Most notable among the results was the silicone contamination on Mg2 mirror 28-92, and that the Long Duration Exposure Facility (LDEF) paint sample had been enriched in K and Na and depleted in Zn, Si, B, and organic compounds relative to the control paint.

Becker, Christopher H.↗