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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Luminescence from Poly-Si Films and its Application to Study Passivating-Contact Solar Cells

In recent years, polycrystalline silicon (poly-Si) based passivating-contact solar cells have received tremendous attention from the solar research community due to its excellent surface passivation and high carrier conductivity. However, the poly-Si films are not transparent to all wavelengths of the solar spectrum. There is often some parasitic absorption in these films. From a different standpoint, as they absorb some light, they can luminesce. This phenomenon provides us with unique opportunities to investigate optoelectronic properties of the films in a fast, contactless, and nondestructive manner. In this work, we report the luminescence phenomenon from poly-Si films used in passivating-contact solar cells. We then utilize this phenomenon to report a range of applications for solar cells including studies of carrier transport behaviors and hydrogenation inside the films.

14 SOLAR ENERGY↗
DOE OSTI2022

Understanding the Effect of Lead Iodide Excess on the Performance of Methylammonium Lead Iodide Perovskite Solar Cells

The presence of unreacted lead iodide in organic-inorganic lead halide perovskite solar cells is widely correlated with an increase in power conversion efficiency. We investigate the mechanism for this increase by identifying the role of surfaces and interfaces present between methylammonium lead iodide perovskite films and excess lead iodide. We show how type I and II band alignments arising under different conditions result in either passivation of surface defects or hole injection. Through first-principles simulations of solid-solid interfaces, we find that lead iodide captures holes from methylammonium lead iodide and modulates the formation of defects in the perovskite, affecting recombination. Using surface-sensitive optical spectroscopy techniques, such as transient reflectance and time-resolved photoluminescence, we show how excess lead iodide affects the diffusion and surface recombination velocity of charge carriers in methylammonium lead iodide films. Our coupled experimental and theoretical results elucidate the role of excess lead iodide in perovskite solar cells.

14 SOLAR ENERGY↗
DOE OSTI2024

Photo-Crosslinkable Naphthalene Diimide Polymer for Solution-Processed n – i – p Perovskite Solar Cells

We copolymerize a norbornene monomer bearing a pendant naphthalene diimide with a norbornene bearing a cinnamate pendant moiety to synthesize a crosslinkable electron-transporting polymer and study its use in solution-processed n–i–p perovskite solar cells. The crosslinked material exhibits over 90% transparency in the visible region and higher thermal stability (>300 °C) and lower surface energy than the corresponding homopolymer of the naphthalene diimide functionalized norbornene. Coating an ITO surface with the photo-crosslinked copolymer yields a slightly lower work function than homopolymer-coated ITO. We show that the morphologies of the perovskite films deposited on both polymers are similar (~300 nm features) based upon scanning electron microscopy. Our solar-cell device results show that the crosslinked naphthalene diimide polymer gives a higher open-circuit voltage (1.08 vs 1.05 V), fill factor (average 64.43 vs 58.77%), and stabilized power conversion efficiency (12.28 vs 10.33%) compared to its non-crosslinked homopolymer counterpart, as well as reduced hysteresis. As a result, we attribute the improved performance to decreased work function, reduced nonradiative recombination, and higher shunt resistance.

14 SOLAR ENERGY↗
DOE OSTI2023

Progress and outlook of Sn–Pb mixed perovskite solar cells

Abstract Organic–inorganic hybrid perovskites have revolutionized solar cell research owing to their excellent material properties. Most previous research has been done on Pb-based perovskites. Recently, efforts to discover a Pb-free or Pb-less perovskite material with an ideal bandgap ranging 1.1–1.3 eV have led researchers to investigate Sn–Pb mixed perovskites. Sn–Pb mixed perovskites have a bandgap of ~ 1.25 eV, which is suitable for high-efficiency single-junction and perovskite/perovskite tandem solar cells. Moreover, the Pb content of Sn–Pb mixed perovskites is 50–60% lower than that of Pb-based perovskites, partially mitigating the Pb toxicity issue. However, incorporating Sn 2+ into the crystal structure also causes various drawbacks, such as inhomogeneous thin film morphologies, easy oxidation of Sn 2+ , and more vulnerable surface properties. Researchers have made substantial progress in addressing these challenges through improvements in compositional design, structural optimization, precursor design, and surface treatments. In this review, we provide a comprehensive overview of the progress in Sn–Pb mixed perovskite solar cells. Furthermore, we analyze the key variables and trends as well as provide an outlook for future directions in the research on Sn–Pb mixed perovskites. Graphical Abstract

14 SOLAR ENERGY↗
DOE OSTI2023

Wire-based metallization and stringing for solar cells

Wire-based metallization and stringing techniques for solar cells, and the resulting solar cells, modules, and equipment, are described. In an example, a substrate has a surface. A plurality of N-type and P-type semiconductor regions is disposed in or above the surface of the substrate. A conductive contact structure is disposed on the plurality of N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of conductive wires, each conductive wire of the plurality of conductive wires essentially continuously bonded directly to a corresponding one of the N-type and P-type semiconductor regions.

14 SOLAR ENERGY↗
DOE OSTI2023

Ammonium cations with high p K a in perovskite solar cells for improved high-temperature photostability

Phenethylammonium (PEA + ) and butylammonium (BA + ) are widely used in three-dimensional (3D) perovskites to form two-dimensional (2D) perovskites at film surfaces and grain boundaries (GBs) for defect passivation and performance enhancement. Here, we show that these cations are unstable with 3D formamidinium (FA + )-containing perovskites under high-temperature light soaking. PEA + and BA + are found to deprotonate to amines, which then react with FA + to produce (phenethylamino)methaniminium (PEAMA + ) and (butylamino)methaniminium (BAMA + ), respectively, severely limiting device high-temperature photostability. Furthermore, removing these cations greatly improves the photostability but compromises device efficiency by leaving non-fully passivated surfaces and GBs. Ammonium cations with a high acid dissociation constant (pK a ), including PEAMA + (pK a =12.0) and BAMA + (pK a =12.0), can replace PEA + or BA + for passivation and are stable with FA-based perovskites due to their resistance to further deprotonation. P-i-n structure solar cells with PEAMA + additive maintained over 90% of their initial efficiency after light soaking at open circuit and 90 °C for 1500 hours.

14 SOLAR ENERGY↗
DOE OSTI2023

Nanopinhole Passivating Contact Si Solar Cells Fabricated with Metal-Assisted Chemical Etching

Monocrystalline Si (c-Si) solar cells with passivating contacts based on doped polycrystalline Si (poly-Si) on ≈2.0 nm silicon oxide (SiO x ) require >1000 °C thermal processing to create conducting pinholes in the SiO x layer. However, this high thermal budget can induce bulk defects in the Czochralski c-Si wafers used as the cell absorber layer. We demonstrate that pinholes can instead be created using metal-assisted chemical etching on planar or textured morphologies, at room temperature. This wet process creates up to 200 nm wide conducting pinholes that are directly observed with transmission electron and atomic force microscopies. High-performance hole-selective poly-Si/SiN y /SiO x and electron-selective poly-Si/SiO x passivating contacts are fabricated and implemented in laboratory-scale solar cells. This process development significantly broadens the range of passivation layer materials, their thicknesses, and surface morphologies, which enables the design of poly-Si contacts with superior passivating quality.

14 SOLAR ENERGY↗
DOE OSTI2026

Screen-Printed SHJ Solar Cells with Complex Silver Inks

Metallization using complex metal inks has gained significant research interest due to its cost-effectiveness and ability to achieve performance comparable to traditional nanoparticle pastes. This study introduces the use of complex silver (Ag) inks applied via industrial screen-printing for silicon heterojunction (SHJ) solar cell metallization. The printed Ag lines exhibit a contact resistivity on SHJ tin-doped indium oxide (ITO) surfaces as low as approximately 0.2-12 mO cm2. Photoluminescence imaging reveals minimal surface passivation degradation (iVoc < 3.5 mV), while scanning electron microscopy (SEM) shows a denser structure compared to Ag layer from nanoparticle pastes. The printed Ag grid features thin (approximately 1 micrometer), continuous fingers approximately 100-120 micrometer wide, significantly thinner than conventional approximately 20-30 micrometer fingers produced with nanoparticle-based pastes. Double printing achieves SHJ device efficiencies exceeding 20%, the highest reported for industrial solar cell precursors using this technology. These findings highlight the potential of complex Ag inks as a sustainable alternative to particle-based pastes, reducing Ag consumption and processing temperatures without compromising efficiency.

14 SOLAR ENERGY↗
DOE OSTI2022

Solar reduction of carbon dioxide on copper-tin electrocatalysts with energy conversion efficiency near 20%

Abstract Copper catalysts modified with tin have been demonstrated to be selective for the electroreduction of carbon dioxide to carbon monoxide. However, such catalysts require the precise control of tin loading amount. Here, we develop a copper/tin-oxide catalyst with dominant tin oxide surface being formed via a spontaneous exchange reaction between sputtered tin and copper oxide. Even though the surface of this catalyst is tin-rich, it achieves an excellent performance towards carbon monoxide production in a flow cell. This contrasts with copper/tin-oxide prepared via atomic layer deposition since it yields selectivity towards carbon monoxide only on a copper-rich surface. Mechanism studies reveal that the tin sites on the tin-rich copper/tin-oxide surface achieve a suitable binding with adsorbed carbon monoxide under the presence of copper. Powered by a triple-junction solar cell, the copper/tin-oxide based electrolyzer sets a new benchmark solar-to-chemical energy conversion efficiency of 19.9 percent with a Faradaic efficiency of 98.9 percent towards carbon monoxide under simulated standard air mass 1.5 global illumination.

14 SOLAR ENERGY↗
DOE OSTI2022

Remote Epitaxy of III-V Solar Cells via Hydride Vapor Phase Epitaxy

The promise of remote epitaxy, in which epitaxial registry of a film can still be maintained through two-dimensional layers, has emerged from an advanced understanding of the interactions between two dimensional materials and bulk semiconductors. A promising application of this technology is to facilitate substrate reuse in epitaxial III-V systems, which could significantly reduce material cost and improve commercial viability of this high-efficiency photovoltaic technology. In this process the weak van der Waal bonds between the 2D layer and the III-V substrate make separation of epitaxially-grown layers simple and leaves a smooth substrate that can be reused for cost reduction. Here we present a study of growth parameters of GaAs on AlGaAs through a low dimensional carbon interlayer via hydride vapor phase epitaxy (HVPE). We Investigate the effect of various GaAs nucleation conditions such as V/III ratio, temperature and growth rate on film roughness, crystallinity, and degree of epitaxial alignment. We demonstrate growth of single crystal GaAs layer on top of the low dimensional carbon that follow the crystal orientation of the substrate. Surface roughness measured via AFM found that lower V/III ratios result in smoother III-V films grown on the low dimensional carbon, with a lowest RMS of ~60 nm obtained at a V/III ratio of 5. Growth temperatures are optimized at 650 C, as temperatures below 550 C show non-crystalline growth and higher temperature samples display very rough surfaces. Additionally, we investigate HVPE growth on various forms of low-dimensional carbon including transferred graphene, CVD-grown graphene, and MOCVD-growth amorphous carbon and find the latter to be most well suited for III-V growth as this method results in cleaner interface and potential for direct, large-area coverage. We also identify techniques to mitigate surface degradation in carbon layers as a function of both exposure time and growth environment by analyzing surface changes via x-ray reflectivity. We show growth of heteroepitaxial III-V solar cells on carbon interlayers and preliminary cell results, which are currently limited to 4% efficiency under one sun.

AlGaAs↗
DOE OSTI2021

Challenges of relaxed n -type GaP on Si and strategies to enable low threading dislocation density

We directly show that doping type strongly affects the threading dislocation density (TDD) of relaxed GaP on Si, with n-type GaP having a TDD of ~3.1 × 10 7 cm -2 , nearly 30× higher than both p-type and unintentionally doped GaP at ~1.1 × 10 6 cm -2 . Such a high TDD is undesirable since n-GaP on Si serves as the starting point for the growth of epitaxial III-V/Si multi-junction solar cells. After highlighting additional challenges for highly n-doped GaP on Si including increased surface roughness, anisotropic strain relaxation, and inhomogeneous TDD distributions from blocking of the dislocation glide, we go on to show that the TDD of n-GaP on Si rises by 10× as the doping concentration increases from ~5 × 10 16 to ~2 × 10 18 cm -3 . Next, we investigate the effects of additional dopant choices on the TDD, determining that electronic effects dominate over solute effects on the dislocation velocity at these concentrations. Finally, we demonstrate the respective roles of compressively strained superlattices, low-temperature initiation, and lowered n-type doping concentration on reducing the TDD for n-GaP on Si. By combining all three, we attain relaxed n-GaP on Si with a TDD of 1.54(±0.20) × 10 6 cm -2 , approaching parity with p-GaP on Si. Such high-quality n-GaP on Si will play an important role in boosting the efficiency of epitaxial III-V/Si multi-junction solar cells.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Effective Dielectric Passivation Scheme in Area-Selective Front/Back Poly-Si/SiOx Passivating Contact Solar Cells

Explored different dielectric passivation schemes on lifetime samples after removing poly-Si completely. Showed that SiNx/Al2O3 had the best passivation properties on SiOx/n+ c-Si in diffused surface. Applied SiNx/Al2O3 stack on poly-Si/SiOx passivating contact device and showed large improvement in Jsc, with best device efficiency of 21.8%. Future work: CV measurement of dielectric stacks to obtain Qf and Dit.

dielectric↗
DOE OSTI2026

Incorporating a naphthalene diimide polymer into a fullerene electron-transport layer to improve the fracture energy of perovskite solar cells

By blending a naphthalene diimide polymer into C 60 , we made a solution-processed electron-transport layer (ETL) for perovskite solar cells with fracture energies of 1.25 J m −2 , over 3× higher than that of thermally evaporated C 60 . Fracture energies were measured in a double cantilever beam configuration, and fracture surface images showed a fracture location near the ETL/perovskite interface, indicating a toughening of the interface between the ETL and Ag. We show that this modification to the ETL has no adverse effect on solar cell performance, and highlight the additional benefit of reduced parasitic absorption; a finding relevant for tandem solar cells.

electron transport layer↗
DOE OSTI2023

Nucleation Selectivity and Lateral Coalescence of GaAs over Graphene on Ge(111)

Here we use epitaxial lateral overgrowth (ELO) to produce semimetallic graphene nanostructures embedded in a semiconducting GaAs matrix for potential applications in plasmonics, THz generation and detection, and tunnel junctions in multijunction solar cells. We show that (1) the combination of low sticking coefficient and fast surface diffusion on graphene enhances nucleation selectivity at exposed regions of the substrate and (2) high growth temperatures favor efficient lateral overgrowth, coalescence, and planarization of epitaxial GaAs films over the graphene nanostructures. Our work provides a more complete understanding of ELO using graphene masks, as opposed to more conventional dielectric masks, and enables new types of metal/semiconductor nanocomposites.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Interfaces in Halide Perovskites: Passivating Defects and Probing Grain Structure

In this talk we describe the role of interfaces, surface defects, and strain on non-radiative recombination losses in hybrid perovskite semiconductors. Using combinations of scanning-probe, electron backscatter diffraction (EBSD), and time-resolved photoluminescence microscopy and spectroscopy, we explore the microscopic origins of non-radiative recombination in both archetypal methylammonium lead tri-iodide (MAPI), and more advanced mixed-cation perovskites. Using EBSD, we image local grain orientation and strain, and correlate surface strain with increased non-radiative recombination in MAPI. We explore the interface between the perovskite and various common charge extraction layers, combining experiment and simulation to show that surface recombination at the charge extraction layers is a limitation in current perovskite solar cell architectures. Finally, we explore alternative passivation and extraction layers to propose ways to more routinely approach the theoretical voltage limits in perovskite photovoltaic using scalable process chemistry.

14 SOLAR ENERGY↗
DOE OSTI2022

Wire-based metallization and stringing for solar cells

Wire-based metallization and stringing techniques for solar cells, and the resulting solar cells, modules, and equipment, are described. In an example, a substrate has a surface. A plurality of N-type and P-type semiconductor regions is disposed in or above the surface of the substrate. A conductive contact structure is disposed on the plurality of N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of conductive wires, each conductive wire of the plurality of conductive wires essentially continuously bonded directly to a corresponding one of the N-type and P-type semiconductor regions.

Sewell, Richard Hamilton↗