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DOE OSTI · 1823443

Effective Dielectric Passivation Scheme in Area-Selective Front/Back Poly-Si/SiOx Passivating Contact Solar Cells

Chen, Kejun·Agarwal, Sumit·Nemeth, William·Theingi, San·Page, Matthew·Stradins, Paul·Young, David L.
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Abstract

Explored different dielectric passivation schemes on lifetime samples after removing poly-Si completely. Showed that SiNx/Al2O3 had the best passivation properties on SiOx/n+ c-Si in diffused surface. Applied SiNx/Al2O3 stack on poly-Si/SiOx passivating contact device and showed large improvement in Jsc, with best device efficiency of 21.8%. Future work: CV measurement of dielectric stacks to obtain Qf and Dit.

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dielectrichigh efficiency solar cellpassivationphotovoltaicpoly Si/SiOxPVSOLAR ENERGY

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Chen, Kejun, Agarwal, Sumit, Nemeth, William, Theingi, San, Page, Matthew, Stradins, Paul, Young, David L.. 2021-09-27. Effective Dielectric Passivation Scheme in Area-Selective Front/Back Poly-Si/SiOx Passivating Contact Solar Cells. https://www.osti.gov/biblio/1823443

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