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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRS2011

Piezoelectrically Enhanced Photocathodes

Doping of photocathodes with materials that have large piezoelectric coefficients has been proposed as an alternative means of increasing the desired photoemission of electrons. Treating cathode materials to increase emission of electrons is called "activation" in the art. It has been common practice to activate photocathodes by depositing thin layers of suitable metals (usually, cesium). Because cesium is unstable in air, fabrication of cesiated photocathodes and devices that contain them must be performed in sealed tubes under vacuum. It is difficult and costly to perform fabrication processes in enclosed, evacuated spaces. The proposed piezoelectrically enhanced photocathodes would have electron-emission properties similar to those of cesiated photocathodes but would be stable in air, and therefore could be fabricated more easily and at lower cost. Candidate photocathodes include nitrides of elements in column III of the periodic table . especially compounds of the general formula Al(x)Ga(1.x)N (where 0< or = x < or =.1). These compounds have high piezoelectric coefficients and are suitable for obtaining response to ultraviolet light. Fabrication of a photocathode according to the proposal would include inducement of strain in cathode layers during growth of the layers on a substrate. The strain would be induced by exploiting structural mismatches among the various constituent materials of the cathode. Because of the piezoelectric effect in this material, the strain would give rise to strong electric fields that, in turn, would give rise to a high concentration of charge near the surface. Examples of devices in which piezoelectrically enhanced photocathodes could be used include microchannel plates, electron- bombarded charge-coupled devices, image tubes, and night-vision goggles. Piezoelectrically enhanced photocathode materials could also be used in making highly efficient monolithic photodetectors. Highly efficient and stable piezoelectrically enhanced, ultraviolet-sensitive photocathodes and photodetectors could be fabricated by use of novel techniques for growing piezoelectrically enhanced layers, in conjunction with thinning and dopant-selective etching techniques.

Beach, Robert A.↗
NASA NTRS1985

CCD charge collection efficiency and the photon transfer technique

The charge-coupled device (CCD) has shown unprecendented performance as a photon detector in the areas of spectral response, charge transfer, and readout noise. Recent experience indicates, however, that the full potential for the CCD's charge collection efficiency (CCE) lies well beyond that which is realized in currently available devices. A definition of CCE performance is presented and a standard test tool (the photon transfer technique) for measuring and optimizing this important CCD parameter is introduced. CCE characteristics for different types of CCDs are compared; the primary limitations in achieving high CCE performance are discussed, and the prospects for future improvement are outlined.

Janesick, J.↗
NASA NTRS1992

Preventing Blooming In CCD Images

Clocking scheme for charge-coupled-device (CCD) imaging photodetector prevents smearing of bright spots and eliminates residual images. Also imposes charge-collecting electric field of optimum-full-well configuration, minimizes nonuniformities among picture elements, and keeps dark current low. Works under almost any lighting conditions.

Janesick, James↗
NASA NTRS1997

A Three-Year Program of Micro- and Nano-System Technology Development for X-Ray Astronomy

For many years the work at MIT aimed at the development of new concepts and technologies for space experiments in high-energy astrophysics, but not explicitly supported by flight programs, has been supported. This work has yielded new devices and techniques for X-ray astronomy, primarily low-noise, deep-depletion charge-coupled devices (CCDS) for spectrally-resolved X-ray imaging, and high-performance transmission gratings for high-resolution X-ray spectroscopy. Among the most significant recent achievements have been the development by G. Ricker and associates of the X-ray CCD camera flying on ASCA, and currently in development for AXAF and Astro-E, and the development by C. Canizares and associates of thick, 200 nm-period transmission gratings employing the phenomenon of phase shifting for high-resolution X-ray spectroscopy up to energies of 8- 1 0 keV that is essential for the operation of the AXAF High Energy Transmission Grating Spectrometer (HETGS). Through the current SR&T grant, the latter technology is now being extended successfully to the fabrication of 100 nm-period transmission gratings, which have twice the dispersion of the AXAF gratings. We note that, among other outcomes, the modest investments of past SR&T Grants at MIT resulted in the development of the key technologies for fully one-half of the scientific instrumentation on AXAF. In addition, NASA flight programs that have benefited from previous SR&T support at MIT include the SAS 3 X-ray Observatory, which carried the first rotation modulation collimator, the Focal Plane Crystal Spectrometer (FPCS) on the Einstein Observatory, the CCD cameras on ASCA and planned for Astro-E, the High Energy Transient Experiment (HETE), the Solar EUV Monitor on the Solar and Heliospheric Observatory (SOHO), the Medium Energy Neutral Atom imager (MENA) on the Image for Magnetopause-to-aurora Global Exploration (IMAGE) mission, and the recently-approved Two Wide-Angle Imaging Neutral-atom Spectrometers (TWINS) Mission of Opportunity.

Canizares, Claude R.↗
NASA NTRS1976

Solid state television camera

The design, fabrication, and tests of a solid state television camera using a new charge-coupled imaging device are reported. An RCA charge-coupled device arranged in a 512 by 320 format and directly compatible with EIA format standards was the sensor selected. This is a three-phase, sealed surface-channel array that has 163,840 sensor elements, which employs a vertical frame transfer system for image readout. Included are test results of the complete camera system, circuit description and changes to such circuits as a result of integration and test, maintenance and operation section, recommendations to improve the camera system, and a complete set of electrical and mechanical drawing sketches.

Source record↗
NASA NTRS1987

CCD Memory

CCD memory device yields over 6.4 x 10 to the eighth power levels of information on single chip. Charge-coupled device (CCD) demonstrated to operate as either read-only-memory (ROM) or photon-programmable memory with capacity of 640,000 bits, with each bit capable of being weighted to more than 1,000 discrete analog levels. Larger memory capacities now possible using proposed approach in conjunction with CCD's now being fabricated, which yield over 4 x 10 to the ninth power discrete levels of information on single chip.

Janesick, James R.↗
NASA NTRS1988

Planetary Fabry-Perot spectroscopy

Application of high spectral resolution, Earth-based Fabry-Perot spectroscopy to the study of planetary atmospheres, for which current topics are outer planet HD and H2 spectra (atmospheric structure, D/H ratio), Mars CO2, CO, O2, and H2O spectra (atomspheric photochemistry), Venus H2O and HDO, associated laboratory spectroscopy (especially H2 overtone bands, HDO) was accomplished. Monochromatic charge coupled device (CCD) imaging photometry of the Jovian nebula, with images taken in rapid sequence among the diagnostic spectral lines of ionized sulfur species, provided self-supporting snapshots of the Jupiter/Io plasma conditions (spatially resolved electron and ion densities and temperatures), covering the post-Voyager period from 1981 and leading up to the Galileo tour in the early 1990s. High spectral resolution Fabry-Perot/charge coupled device (CCD) imaging of comets (OI, CI, and H2O(+) velocity maps and spatial distriubtions), and Io's charge exchanged neutral jet was studied.

Trauger, J. T.↗
NASA NTRS1978

The study of surface acoustic wave charge transfer device

A surface acoustic wave-charge transfer device, consisting of an n-type silicon substrate, a thermally grown silicon dioxide layer, and a sputtered film of piezoelectric zinc oxide is proposed as a means of circumventing problems associated with charge-coupled device (CCD) applications in memory, signal processing, and imaging. The proposed device creates traveling longitudinal electric fields in the silicon and replaces the multiphase clocks in CCD's. The traveling electric fields create potential wells which carry along charges stored there. These charges may be injected into the wells by light or by using a p-n junction as in conventional CCD's.

Papanicolaou, N.↗
NASA NTRS1993

Locating Electron Traps In A CCD

"Pocket pumping" is technique for mapping sizes of electron-trapping defects and picture elements within which traps located in charge-coupled device (CCD). Two kinds of traps: forward and reverse. Pocket pumping relies on fact that in terms of charges measurable by external circuitry, forward traps affect only forward, while reverse traps affect only reverse, transfer of charge along row or column of picture elements. Charges in picture elements shifted back and forth many times to amplify trapping effect by repetition. Traps smaller than 1 electron detected by this method.

Janesick, James↗
NASA NTRS1989

Metal Film Increases CCD Quantum Efficiency

Thin layer of platinum or other high-work-function metal applied to back side of rear-illuminated charge-coupled device (CCD) achieves quantum efficiency (QE)-pinned state, an ideal condition allowing sensor to achieve 100-percent internal charge-collection efficiency within its photosensitive volume. Metal layer, called flash gate, easily applied by tungsten vacuum deposition during last step of sensor fabrication.

Janesick, James R.↗
NASA NTRS1994

Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

Fossum, Eric R.↗
NASA NTRS1995

Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

Fossum, Eric R.↗
NASA NTRS1993

Photodetector Array For Neural Network

Integrated circuit performs 1,024 threshold operations in parallel. Designed for use in postprocessing output of optical correlator in optoelectronic neural network. Overall function of device to put out digital signals indicative of location(s) of bright spot(s) on detector plane. Response time less than commercial charge-coupled-device (CCD) imaging detector operating at standard television frame rate.

Langenbacher, Harry↗
NASA NTRS2003

MOS Circuitry Would Detect Low-Energy Charged Particles

Metal oxide semiconductor (MOS) circuits for measuring spatially varying intensities of beams of low-energy charged particles have been developed. These circuits are intended especially for use in measuring fluxes of ions with spatial resolution along the focal planes of mass spectrometers. Unlike prior mass spectrometer focal-plane detectors, these MOS circuits would not be based on ion-induced generation of electrons, and photons; instead, they would be based on direct detection of the electric charges of the ions. Hence, there would be no need for microchannel plates (for ion-to-electron conversion), phosphors (for electron-to-photon conversion), and photodetectors (for final detection) -- components that degrade spatial resolution and contribute to complexity and size. The developmental circuits are based on linear arrays of charge-coupled devices (CCDs) with associated readout circuitry (see figure). They resemble linear CCD photodetector arrays, except that instead of a photodetector, each pixel contains a capacitive charge sensor. The capacitor in each sensor comprises two electrodes (typically made of aluminum) separated by a layer of insulating material. The exposed electrode captures ions and accumulates their electric charges during signal-integration periods.

Sinha, Mahadeva↗
NASA NTRS1981

Planetary exploration sensor systems

Most of the instruments that have been used in planetary exploration have been either spectrometers or imaging devices. Instruments of these types are being developed for the Galileo and VOIR (Venus Orbiting Imaging Radar) missions. Galileo will take advantage of new CCD (charge-coupled device) technology, and VOIR will use techniques of synthetic aperture radar developed for Seasat. For determining the macrostructure of mineral resources, the best approach is believed to involve acoustic imaging, essentially a seismic data processing technique. Determinations of microstructure would require a light microscope and an electron microscope. For determining the nature and form of volatiles, a differential scanning calorimeter could be used. To determine the mineral composition, an electron beam microprobe with X-ray fluorescence and spectroscopy would be used.

Saunders, R. S.↗
NASA NTRS1982

Low-background performance of a monolithic InSb CCD array

A 20 element monolithic InSb charge coupled device (CCD) detector array was measured under low background conditions to assess its potential for orbital astronomical applications. At a temperature of 64 K, previous results for charge transfer efficiency (CTE) were reproduced, and a sensitivity of about 2 x 10 to the minus 15th power joules was measured. At 27 and 6 K, extended integration times were achieved, but CTE was substantially degraded. The noise was approximately 6000 charges, which was in excess of the level where statistical fluctuations from the illumination could be detected. A telescope demonstration was performed showing that the array sensitivity and difficulty of operation were not substantially different from laboratory levels. Ways in which the device could be improved for astronomical applications were discussed.

Bregman, J. D.↗
NASA NTRS1985

Backside charging of the CCD

Until recently, the usefulness of the charge coupled device (CCD) as an imaging sensor was thought to be restricted to within rather narrow boundaries of the visible and near IR spectrum. However, since the discovery of backside charging the full potential of CCD performance is now realized. Indeed, the technique of backside charging not only allows the CCD to be used directly in the UV, EUV, and soft X-ray regimes, it has opened up new opportunities in optimizing charge collection processes as well. The technique of backside charging is discussed, and its properties, use, and potential in the future as it applies to the CCD are described.

Janesick, J.↗
NASA NTRS2003

Chromatic Modulator for High Resolution CCD or APS Devices

A system for providing high-resolution color separation in electronic imaging. Comb drives controllably oscillate a red-green-blue (RGB) color strip filter system (or otherwise) over an electronic imaging system such as a charge-coupled device (CCD) or active pixel sensor (APS). The color filter is modulated over the imaging array at a rate three or more times the frame rate of the imaging array. In so doing, the underlying active imaging elements are then able to detect separate color-separated images, which are then combined to provide a color-accurate frame which is then recorded as the representation of the recorded image. High pixel resolution is maintained. Registration is obtained between the color strip filter and the underlying imaging array through the use of electrostatic comb drives in conjunction with a spring suspension system.

Frank T Hartley↗