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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11

Unifying principles for catalytic hydrotreating processes (Final Technical Report)

This project builds on the hypothesis that the hydrotreating processes for the removal of oxygen and sulfur are fundamentally similar at the atomic-scale and existing knowledge from the treatment of petroleum derived feedstock can be leveraged for the design of novel catalysts for the upgrade of bio-oil. We tested this hypothesis by comparing computed potential energy diagrams for hydrodesulfurization (HDS) of thiophene over MoS 2 with hydrodeoxygenation (HDO) of furan over MoO 3 and concluded that certain aspects, such as catalyst promotion with transition metals, are valid strategies for both reactions. On the other hand, we also noticed significant differences in the mechanism for hydrogen (H 2 ) activation, which requires sites with metallic character. While MoS 2 is known to have metallic edge states that can catalyze H 2 dissociation, this elementary step is prohibitively slow on defect-free oxides. Only in the presence of vacancies or by creating metal/oxide interfaces can efficient H 2 activation sites during HDO be formed. The need for bifunctional catalyst when it comes to efficient and selective HDO or dehydrogenation reactions was further corroborated in joint experimental and theoretical studies of the Guerbet reaction for the coupling of biomass derived oxygenates over PdCu alloys, nitrate reduction over In-promoted Pd nanoparticles, and ethylene dehydroaromatization over Ga-exchanged ZSM-5 zeolites. All of these catalytic systems have in common that catalytic sites with distinct functional requirements are needed to create a working catalyst. Detailed computational studies were carried out for HDO of m -cresol and phenol on Ru-modified TiO 2 surfaces, which allowed us to attribute catalytic activity to the metal/oxide interface. A surprising finding was that heterolytic cleavage of the H-H bond across the Ru/TiO 2 interface was critically important, despite lower barriers for homolytic H 2 activation on Ru metal. The explanation lies in the high barriers for hydrogen spillover from Ru to TiO 2 , which becomes unnecessary in the heterolytic activation pathway. Moreover, we also reported that proton transfer steps between metal and oxide sites are mediated by weakly adsorbed surface water. During attempts to develop and validate a kinetic Monte Carlo (kMC) model for HDO reactions at the Ru/TiO 2 interface, it became clear that lateral interactions are paramount to describe realistic surface chemistry and without these interactions, the reduction and hydroxylation behavior from our simulations was inconsistent with reported experiments. To assess the importance of lateral interactions in popular computational catalyst design strategies relying on the identification of reactivity descriptors, which can be used along with Brønsted–Evans–Polanyi (BEP) and scaling relations as input to a microkinetic model (MKM) to make predictions for activity or selectivity trends, we compared predicted trends with those obtained from descriptor-based kMC models. We critically evaluated the benefits of kMC over MKM in terms of trend predictions and computational cost when using only a small set of input parameters. After confirming that in the absence of lateral interactions the kMC and MKM approaches yield identical trends and mechanistic information, we observed substantial differences between the two kinetic models when lateral interactions were introduced. The mean-field implementation applies coverage corrections directly to the descriptors, causing an artificial overprediction of the activity of strongly binding metals. In contrast, the cluster expansion in kMC implementation can differentiate among the highly active metals but it is very sensitive to the set of included interaction parameters. Considering that computational screening relies on a minimal set of descriptors, for which MKM makes reasonable trend predictions at a ca. three orders of magnitude lower computational cost than kMC, we concluded that the MKM approach does provide an overall better entry point for computational catalyst design. Overall, this project has led to 11 peer-reviewed publications, and their scientific is impact is well illustrated by their combined 702 citations.

08 HYDROGEN↗

Generalized Integral Boundary Layer Equations in Streamline Curvilinear Coordinates

The MEIT equations are derived in orthogonal streamline curvilinear coordinates defined by the inviscid velocity at the wall and the surface-normal direction. The resulting formulations is (1) is not restricted to flat-plate or axisymmetric geometries, (2) accommodates vortical inviscid flows (e.g., induced by curved shocks) and wall mass blowing, and (3) allows for an arbitrary definition of the edge state. The streamline ODEs are also extended to a surface PDE framework.

97 MATHEMATICS AND COMPUTING↗

Edge majorana quasiparticles and qubits

Various embodiments described herein provide for a topological quantum computer that uses edge Majorana quasi-particles to form qubits. An inverted Indium Arsenide (InAs) and Gallium Antimonide (GaSb) heterostructure is disclosed that is a quantum spin Hall insulator. A layer of aluminum can be deposited over a nanotube that is placed across the layers of the heterostructure. Once the nanotube is removed, and a gate is formed on the heterostructure and the heterostructure is cooled so that the aluminum becomes superconducting, helical edge states are formed at the junction of the super conducting aluminum, the InAs, and the GaSb which creates a Majorana zero modes (MZMs) at zero magnetic field. The MZMs can be used to construct a topological qubit for fault-resistant topological quantum computation.

Pan, Wei↗

Effect of grazing flow on steady-state resistance of isolated square-edged orifices

Steady state diagnostic testing of an isolated orifice has shown the nature of the interaction between grazing and orifice flow causing the large increase in orifice resistance for both inflow and outflow. A simple inviscid interaction model is developed which uses thin aerofoil theory to account for pressure forces exerted at the interface between the orifice and grazing flow together with a one-dimensional discharge coefficient concept. The effect of grazing flow boundary layer thickness is also included in the model. Resistance measurements for each orifice tested, over a wide range of grazing flow speeds and flow rates, collapse into a single curve when plotted in terms of effective discharge coefficient against orifice to grazing velocity ratio. The correlation curves for inflow and outflow are different. Data for clustered orifices collapse in the same way as those for the single orifice. The effect of boundary layer thickness is compared with model predictions.

Rogers, T.↗

Security and Trust Metrics for Edge Computing

The present state of edge computing is an environment of different computing capabilities connected via a wide variety of communication paths. The energy grid is relying upon distributed energy devices connected at the edge of the internet. Consider the scenario where each edge device is customer-owned distributed energy resource (DER) that is connected via a trustworthy link to a grid service provider. Each DER keeps a local simple trust record of interactions. Information protection is provided by internet https standards, however, trust must be evaluated throughout operation. This paper presents a model for representing and evaluating trust in general and applied to the energy grid as a key example. Actors on the edge may interact with each other as well as with a central datacenter.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Reversible Modification of Rashba States in Topological Insulators at Room Temperature by Edge Functionalization

Quantum materials with novel spin textures from strong spin-orbit coupling (SOC) are essential components for a wide array of proposed spintronic devices. Topological insulators have a necessary strong SOC that imposes a unique spin texture on topological states and Rashba states that arise on the boundary, but there is no established methodology to control the spin texture reversibly. Here, it is demonstrated that functionalizing Bi 2 Se 3 films by altering the step-edge termination directly changes the strength of SOC and thereby modifies the Rashba strength of 1D edge states. Scanning tunneling microscopy/spectroscopy shows that these Rashba edge states arise and subsequently vanish through the Se functionalization and reduction process of the step edges. The observations are corroborated by density functional theory calculations, which show that a subtle chemical change of edge termination fundamentally alters the underlying electronic structure. Importantly, fully reversible and repeatable switching of Rashba edge states across multiple cycles at room temperature is experimentally demonstrated. The results imply Se functionalization as a practical method to control SOC and spin texture of quantum states in topological insulators.

Rashba edge states↗

Topological Defect Engineering and $\mathcal{PT}$ Symmetry in Non-Hermitian Electrical Circuits

In this work, we employ electric circuit networks to study topological states of matter in non-Hermitian systems enriched by parity-time symmetry $\mathcal{PT}$ and chiral symmetry anti-$\mathcal{PT (APT)}$. The topological structure manifests itself in the complex admittance bands which yields excellent measurability and signal to noise ratio. We analyze the impact of $\mathcal{PT}$-symmetric gain and loss on localized edge and defect states in a non-Hermitian Su-Schrieffer-Heeger (SSH) circuit. We realize all three symmetry phases of the system, including the $\mathcal{APT}$-symmetric regime that occurs at large gain and loss. We measure the admittance spectrum and eigenstates for arbitrary boundary conditions, which allows us to resolve not only topological edge states, but also a novel $\mathcal{PT}$-symmetric $\mathbb{Z}_2$ invariant of the bulk. We discover the distinct properties of topological edge states and defect states in the phase diagram. In the regime that is not $\mathcal{PT}$ symmetric, the topological defect state disappears and only reemerges when $\mathcal{APT}$ symmetry is reached, while the topological edge states always prevail and only experience a shift in eigenvalue. Our findings unveil a future route for topological defect engineering and tuning in non-Hermitian systems of arbitrary dimension.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Resonance plasmonic coupling: selective enhancement of band edge emission over trap state emission of CdSe quantum dots

The photoluminescence properties of quantum dots (QDs) are often enhanced by eliminating surface trap states through chemical methods. Alternatively, a physical approach is presented here for improving photoluminescence purity in QDs by employing frequency-specific plasmon resonance coupling. Emitter-bound plasmonic hybrids are designed by electrostatically binding negatively charged QDs in water to positively charged gold nanoparticles having a thin polymer coating. Herein, two types of QDs are used: (i) bare CdSe, which exhibits both band edge and trap state emission, and (ii) CdSe overcoated with a ZnS shell (CdSe/ZnS) devoid of trap state emission. Tuning the extinction spectrum of the plasmonic system to match the band edge emission of CdSe enables the selective enhancement of band edge emission over trap state emission. Excellent match in the extinction spectrum of the gold nanoparticle with both, experimentally calculated photoluminescence enhancement factor and theoretically calculated radiative rate enhancement signifies the role of frequency-specific plasmon resonance coupling. Plasmon-coupled photoluminescence of CdSe/ZnS is further investigated by varying the number density of emitter on the surface of plasmonic nanoparticle. An enhancement in the photoluminescence is observed at a lower emitter density of CdSe/ZnS and the photoluminescence enhancement factor closely follows the plasmon resonance. However, photoluminescence quenching occurs with an increase in CdSe/ZnS due to plasmon-assisted nonradiative energy transfer between nearby QDs, as indicated by a red shift in the PL maximum. These studies establish that resonance plasmonic coupling is a convenient physical strategy for tuning the intrinsic photoluminescence properties of QDs for various optoelectronic applications.

Paul, Livin↗

Microwave Imaging of Edge Conductivity in Graphene at Charge Neutrality and Quantum Hall States

Here, we report local conductivity imaging of edge states in monolayer graphene by millikelvin microwave impedance microscopy. At the charge-neutrality point, as the magnetic field increases, the local conductivity at the edge drops to zero more slowly than in the bulk. This behavior is consistent with the calculated spatial profile of the charge gap in the canted antiferromagnetic phase. For comparison, we also perform microwave imaging of integer quantum Hall states away from neutrality, which host dissipationless chiral edge channels. The evolution of the edge signal as a function of the bulk gap is fundamentally different between the Landau level filling factor 𝜈 = 0 and |𝜈| ≥ 1 integer quantum Hall states, which can be qualitatively explained by numerical simulations and theoretical analysis. Our results provide a comprehensive microscopic picture of the edge and bulk states as the Fermi level moves across the unique Landau-level spectrum of graphene.

Hall effect↗

Separate Surface and Bulk Topological Anderson Localization Transitions in Disordered Axion Insulators

In topological phases of matter for which the bulk and boundary support distinct electronic gaps, there exists the possibility of decoupled mobility gaps in the presence of disorder. This is in analogy with the well-studied problem of realizing separate or concomitant bulk-boundary criticality in conventional Landau theory. Using a three-dimensional axion insulator having clean, gapped surfaces with 𝑒 2 /2⁢ℎ quantized Hall conductance, we show that the bulk and surface mobility gap evolve differently in the presence of disorder. The decoupling of the bulk and surface topology yields a regime that realizes a two-dimensional, unquantized anomalous Hall metal in the Gaussian unitary ensemble on each surface, which shares some spectral and response properties akin to the surface states of a conventional 3D topological insulator. The generality of these results, as well as extensions to other insulators and superconductors, is discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Direct and Inverse Photoelectron Spectroscopy Evidence for a Revised Picture of Electronic States of Negative Polarons in n‐Doped C 60

Abstract Determining the electronic levels associated with polarons, the fundamental charge carriers in organic semiconductors, is key to understanding the charge transport properties of these materials. Recent findings challenge the traditional view of these electronic levels by highlighting the importance of intra‐molecular Coulomb interactions in polarons. Experimental evidence was previously presented for a revised model of the negative polaron in the case of the polymer semiconductor poly(NDI2OD‐T 2 ); there, the addition of an excess electron was seen to lead to the emergence of a singly occupied state within the energy gap of the undoped material and an unoccupied state above the edge of the conduction states . Here, focus is on a small‐molecule semiconductor, C 60 , and spectral evidence is provided of a similar picture for the new states appearing upon polaron formation. Specifically, direct and inverse photoemission spectroscopy is used to investigate the density of states in C 60 films n‐doped with two dimeric dopants. The Coulomb interaction energy (Hubbard U ) of the C 60 anion is experimentally determined to be ≈1.1 eV, a value that aligns closely with theoretical predictions.

36 MATERIALS SCIENCE↗

Electrode biasing maintains the edge shear layer at high density in the J-TEXT tokamak

Collapse of the edge flow shear as the line-averaged density approaches the Greenwald density limit has been observed as a precursor to the enhanced edge particle flux characteristic of proximity to the density limit regime. Here, we report the use of a biased electrode to sustain the edge shear layer in high density discharges, in which the shear layer would otherwise collapse. A stable increase in line-averaged density is observed along with a strong increase in edge density. These experiments were carried out on the J-TEXT tokamak. The Reynolds stress at the edge is enhanced, and the zonal flow sustained, while density perturbation levels, the flux of turbulence internal energy (i.e., turbulence spreading), and particle and heat flux all decrease significantly. Electron adiabaticity increases, and bias voltage modulation experiments show that an increase in the edge shear leads the increase in adiabaticity. Furthermore, these results suggest that external edge E × B flow shear drive may be of interest for sustaining edge plasma states at high density, and support the hypothesis that collapse of the edge shear layer triggers the onset of the strong transport and turbulence characteristic of the density limit regime.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Towards Floquet Chern insulators of light

Topological photonics explores photonic systems that exhibit robustness against defects and disorder, enabled by protection from underlying topological phases. These phases are typically realized in linear optical systems and characterized by their intrinsic photonic band structures. Here we experimentally study Floquet Chern insulators in periodically driven nonlinear photonic crystals, where the topological phase is controlled by the polarization and the frequency of the driving field. Our transient sum-frequency generation measurements reveal strong hybridization of the Floquet photonic bands. The measured spectrum remains gapless under a linearly polarized drive but becomes gapped under a circularly polarized drive. Theoretical analysis confirms that the Floquet gap is topological, characterized by a non-zero Chern number—a consequence of time-reversal symmetry breaking induced by the circularly polarized driving field. Furthermore, this work offers opportunities to explore the role of classical optical nonlinearity in topological phases and their applications in nonlinear optoelectronics.

36 MATERIALS SCIENCE↗

Active microrheology and dynamic phases for pattern-forming systems with competing interactions

We consider the driven dynamics of a probe particle moving through an assembly of particles with competing long-range repulsive and short-range attractive interactions, which form crystal, stripe, labyrinth, and bubble states as the ratio of attraction to repulsion is varied. We show that the probe particle exhibits a depinning-like threshold from an elastic regime, where the probe particle is trapped by interactions with the other particles, to a plastic flow regime, where the probe particle can break bonds in the surrounding medium. For a fixed particle density, the depinning threshold and sliding velocity of the probe particle vary nonmonotonically as the attraction term is increased. A velocity minimum appears near the crystal to stripe crossover, and there is a significant increase in the depinning threshold in the bubble regime when the probe particle is strongly confined inside the bubbles. For fixed attractive interaction but increasing particle density, the behavior is also nonmonotonic, and there are jumps and drops in the velocity and depinning threshold corresponding to points at which the system transitions between different structures. There are also several distinct flow states that can be characterized by the amount of plastic deformation induced by the probe particle in the surrounding medium. Each flow state generates a different amount of effective drag on the probe particle, and there can be jumps in the velocity-force curve at transitions between the states. In conclusion, we also find that when oriented stripes are present, the probe particle can move along the stripe in an edge transport state that has a finite Hall angle.

36 MATERIALS SCIENCE↗

Identification of uranium oxidation states using oxygen K-edge scanning transmission X-ray microscopy

The field of nuclear forensics is growing in importance, and the increasing capabilities at synchrotron radiation light sources enable non-destructive characterization of oxide particles with better spatial, compositional, and oxidation state speciation resolution than ever before. Here, uranium oxide particles derived from multiple wet chemical processing methods were examined using a scanning transmission X-ray microscope (STXM), and a weakly-supervised method was developed to automatically analyze the collected data. Multiple uranium oxidation states were observed and quantified within and between samples, yielding information about differences between particles produced via the various processing routes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Free-edge stress analysis of glass-epoxy laminates with matrix cracks

The effect of matrix cracks on the composite delamination and interlaminar stresses is investigated in (+15/90n/-15)s glass-epoxy laminates (with values of n equal to 0, 1, 2, or 3) subjected to monotonically increasing tension loads. Three-dimensional (3D) and quasi-3D (Q3D) finite-element analyses are used to model the free-edge stress states in the laminates with and without a matrix crack, respectively. The Q3D results show that in-plane transverse tensile stresses exist in the +15 deg plies near the free edges of all of the laminates used and that only the interlaminar shear stress is high at the +15/theta interface. The results of 3D analysis indicate that large tensile interlaminar normal as well as shear stresses develop at the intersection of the matrix crack and the free edge. This suggests that the interlaminar normal stress plays a significant role in the failure of these laminates.

Fish, John C.↗

Computational procedure for evaluation of space shuttle TPS requirements

The rudiments of a computational procedure are presented for predicting heat transfer rates to the windward pitchplane of a shuttle vehicle under conditions of nonequilibrium flow. The procedure involves computations in three regions of the flow field, namely, the stagnation region, inviscid flow region, and boundary layer region. The thermochemical state in the inviscid flow was calculated with the aid of correlations developed from shadowgraphs of shuttle configurations. The flow in the boundary layer and stagnation regions was computed with a nonequilibrium viscous layer code. For boundary layers, the outer edge thermochemical state was determined by matching the mass flow in the boundary layer with the mass flow represented by each inviscid streamline. Typical solutions are presented to show the effects of surface pressure, catalycity, and homogeneous chemical reactions on flow field variables and surface heat transfer rates.

Tong, H.↗

Triplet Exciton Sensitization of Silicon Mediated by Defect States in Hafnium Oxynitride

Singlet exciton fission has the potential to increase the efficiency of crystalline silicon solar cells beyond the conventional single junction limit. Perhaps the largest obstacle to achieving this enhancement is uncertainty about energy coupling mechanisms at the interfaces between silicon and exciton fission materials such as tetracene. Here, the previously reported silicon‐hafnium oxynitride‐tetracene structure is studied and a combination of magnetic‐field‐dependent silicon photoluminescence measurements and density functional theory calculations is used to probe the influence of the interlayer composition on the triplet transfer process across the hafnium oxynitride interlayer. It is found that hafnium oxide interlayers do not show triplet exciton sensitization of silicon, and that nitrogen content in hafnium oxynitride layers is correlated with enhanced sensitization. Calculation results reveal that defects in hafnium oxynitride interlayers with higher nitrogen content introduce states close to the band‐edge of silicon, which can mediate the triplet exciton transfer process. Some defects introduce additional deleterious mid‐gap states, which may explain observed silicon photoluminescence quenching. These results show that band‐edge states can mediate the triplet exciton transfer process, potentially through a sequential charge transfer mechanism.

36 MATERIALS SCIENCE↗