Search NASA⌕ Search

SEARCH · Search NASA

Results for “gate”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

Characterization of silicon-gate CMOS/SOS integrated circuits processed with ion implantation

The procedure used to generate MEBES masks and produce test wafers from the 10X Mann 1600 Pattern Generator Tape using existing CAD utility programs and the MEBES machine in the RCA Solid State Technology Center are described. The test vehicle used is the MSFC-designed SC102 Solar House Timing Circuit. When transforming the Mann 1600 tapes into MEBES tapes, extreme care is required in order to obtain accurate minimum linewidths when working with two different coding systems because the minimum grid sizes may be different for the two systems. The minimum grid sizes are 0.025 mil for MSFC Mann 1600 and 0.02 mil for MEBES. Some snapping to the next grid is therefore inevitable, and the results of this snapping effect are significant when submicron lines are present. However, no problem was noticed in the SC102 circuit because its minimum linewidth is 0.3 mil (7.6 microns). MEBES masks were fabricated and wafers were processed using the silicon-gate CMOS/SOS and aluminum-gate COS/MOS processing.

Woo, D. S.↗
NASA NTRS1985

A gel-halo sample pellet: The best of both worlds? Stubby zones without a constricted sample gate

This reduces cell quantity, in the same way as does a narrower bore sample gate. The cells are confined to the center of the gate, inside a halo of electrolyte (D-1 buffer, here) immobilized by gel, which halo mechanically retains the ice pellet in position prior to thaw. The gel halo can be retained by the same gentle ridge as is contemplated for the ice pellet, and the ice pellet can be likewise retained within the gel halo.

Hinckley, J. O. N.↗
NASA NTRS1986

Diamondlike carbon films on semiconductors for insulated-gate technology

MIS structures are fabricated on p-type InP, GaAs, and Si substrated by direct ionization of 25-percent CH4 in Ar and ion-beam deposition of 70-nm-thick diamondlike films, followed by application of Al gate electrodes and ohmic contacts. The films are found to have bandgap 0.9-1.1 eV, resistivity 8.1 Mohm cm, breakdown field strength 1 MV/cm, and density 1.8 g/cu cm, to be thermally stable up to 400 C, and to undergo rapid decomposition above 450 C. The electrical properties of the MIS structures are significantly improved by sputter cleaning the substrates with a 1-keV 2-mA/sq cm Ar beam for 2 min at 300 microtorr prior to C-film deposition. The resulting structures have fixed insulator charge number densities 4 x 10 to the 12th/sq cm (InP), 7.5 x 10 to the 12th/sq cm (GaAs), and 9 x 10 to the 11th/sq cm (Si) and interface state densities (5, 200, and 0.5) x 10 to the 12th/ sq cm eV, respectively. It is suggested that the low optical bandgap and resistivity of the C films and the high insulator-charge and interface-state densities make them unstable as gate dielectrics for microelectronics.

Kapoor, V. J.↗
NASA NTRS1986

The CCD flash gate

Preliminary findings are presented for a new approach that significantly improves the quantum efficiency of the current generation of high-performance, thinned, backside illuminated silicon CCDs. Experiments have shown that the application of a less than 4-micron thick layer of metal with high work function to the backside of the CCD can yield 100-percent internal quantum efficiency in the visible, UV, XUV and soft X-ray regions of the spectrum. Theory and solid state models describing the new technique (the 'CCD flash gate'), and a considerable amount of experimental data, are discussed. Specific recommendations for use of the flash gate in present and future CCDs are also reviewed.

Janesick, James↗
NASA NTRS1988

Blanket Gate Would Address Blocks Of Memory

Circuit-chip area used more efficiently. Proposed gate structure selectively allows and restricts access to blocks of memory in electronic neural-type network. By breaking memory into independent blocks, gate greatly simplifies problem of reading from and writing to memory. Since blocks not used simultaneously, share operational amplifiers that prompt and read information stored in memory cells. Fewer operational amplifiers needed, and chip area occupied reduced correspondingly. Cost per bit drops as result.

Lambe, John↗
NASA NTRS1987

Two stage dual gate MESFET monolithic gain control amplifier for Ka-band

A monolithic two stage gain control amplifier has been developed using submicron gate length dual gate MESFETs fabricated on ion implanted material. The amplifier has a gain of 12 dB at 30 GHz with a gain control range of over 30 dB. This ion implanted monolithic IC is readily integrable with other phased array receiver functions such as low noise amplifiers and phase shifters.

Sokolov, V.↗
NASA NTRS1990

Recovering Energy From A Rapidly Switched Gate

Circuit proposed to recover energy usually lost in charging and discharging internal gate capacitance of field-effect transistor during high-frequency switching. Scheme includes pulse-forming circuit generating rectangular waveform with zero-level notches near beginning and end of "on" period. Inductor resonates internal gate capacitance so energy recovered during notches.

Rippel, Wally E.↗
NASA NTRS1991

A resistive-gate Al(0.3)Ga(0.7)As/GaAs 2DEG CCD with high charge-transfer efficiency at 1 GHz

The fabrication and performance of an Al(0.3)Ga(0.7)As/GaAs modulation-doped resistive-gate CCD are reported. The two-dimensional electron gas (2DEG) CCD, implemented as a 32-stage four-phase delay line, was tested at both low (1-13 MHz) and high (0.6-1.0 GHz) frequency. It exhibits a room-temperature charge-transfer efficiency (CTE) of better than 0.999 at clock frequencies from 10 MHz up to 1 GHz without a fat-zero signal and is limited by dark current below 10 MHz. The high-frequency test showed no CTE degradation up to 1-GHz operation. The CTE degraded at frequencies lower than approximately 5 MHz due to dark current. The charge-handling capability and minimum clock swing of the resistive-gate 2DEG CCD are calculated.

Song, J.-I.↗
NASA NTRS1991

Significant long-term reduction in n-channel MESFET subthreshold leakage using ammonium-sulfide surface treated gates

Ammonium-sulfide (NH4)2S treated gates have been employed in the fabrication of GaAs MESFETs that exhibit a remarkable reduction in subthreshold leakage current. A greater than 100-fold reduction in drain current minimum is observed due to a decrease in Schottky gate leakage. The electrical characteristics have remained stable for over a year during undesiccated storage at room temperature, despite the absence of passivation layers.

Neudeck, P. G.↗
NASA NTRS1993

Analyzing Single-Event Gate Ruptures In Power MOSFET's

Susceptibilities of power metal-oxide/semiconductor field-effect transistors (MOSFET's) to single-event gate ruptures analyzed by exposing devices to beams of energetic bromine ions while applying appropriate bias voltages to source, gate, and drain terminals and measuring current flowing into or out of each terminal.

Zoutendyk, John A.↗
NASA NTRS1992

Field programmable gate arrays: Evaluation report for space-flight application

Field Programmable Gate Arrays commonly called FPGA's are the newer generation of field programmable devices and offer more flexibility in the logic modules they incorporate and in how they are interconnected. The flexibility, the number of logic building blocks available, and the high gate densities achievable are why users find FPGA's attractive. These attributes are important in reducing product development costs and shortening the development cycle. The aerospace community is interested in incorporating this new generation of field programmable technology in space applications. To this end, a consortium was formed to evaluate the quality, reliability, and radiation performance of FPGA's. This report presents the test results on FPGA parts provided by ACTEL Corporation.

Sandoe, Mike↗
NASA NTRS1999

Some Outstanding Products from the GATE Convection Data Set: A Personal View

Concerning our knowledge of convective clouds and their important processes, GATE marks a watershed between "seeing through a glass darkly" and "then face to face" in some of the most vital aspects of convective systems. Two main areas will be discussed here, namely the interactions of observations and modeling in documentation of slow and fast-moving squall lines, for which the publications began in the 70's, and the use of the GATE ships' radar data set as the basis for demonstrating that tropical rainfall could be measured from space, resulting in the Tropical Rainfall Measuring Mission (TRMM). The TRMM satellite was launched in 1997, with the enabling analyses reaching publication in the 1980's.

Simpson, Joanne↗
NASA NTRS2002

Field-Programmable Gate Array Computer in Structural Analysis: An Initial Exploration

This paper reports on an initial assessment of using a Field-Programmable Gate Array (FPGA) computational device as a new tool for solving structural mechanics problems. A FPGA is an assemblage of binary gates arranged in logical blocks that are interconnected via software in a manner dependent on the algorithm being implemented and can be reprogrammed thousands of times per second. In effect, this creates a computer specialized for the problem that automatically exploits all the potential for parallel computing intrinsic in an algorithm. This inherent parallelism is the most important feature of the FPGA computational environment. It is therefore important that if a problem offers a choice of different solution algorithms, an algorithm of a higher degree of inherent parallelism should be selected. It is found that in structural analysis, an 'analog computer' style of programming, which solves problems by direct simulation of the terms in the governing differential equations, yields a more favorable solution algorithm than current solution methods. This style of programming is facilitated by a 'drag-and-drop' graphic programming language that is supplied with the particular type of FPGA computer reported in this paper. Simple examples in structural dynamics and statics illustrate the solution approach used. The FPGA system also allows linear scalability in computing capability. As the problem grows, the number of FPGA chips can be increased with no loss of computing efficiency due to data flow or algorithmic latency that occurs when a single problem is distributed among many conventional processors that operate in parallel. This initial assessment finds the FPGA hardware and software to be in their infancy in regard to the user conveniences; however, they have enormous potential for shrinking the elapsed time of structural analysis solutions if programmed with algorithms that exhibit inherent parallelism and linear scalability. This potential warrants further development of FPGA-tailored algorithms for structural analysis.

Singleterry, Robert C., Jr.↗
NASA NTRS2003

Mechanosensitive Ion Channels in Bacteria: Functional Domains and Mechanisms of Gating

The past funding period was productive for the group. The progress in the mechanosensitive channel field was critically affected in the end of 1998 by the solution of the crystal structure of the mycobacterial homolog of MscL by our colleagues from Caltech. Having the structure of TbMscL in the closed state, we developed a detailed homology model of EcoMscL, and related the structural model with the wealth of functional phenomenology available for the E. coli version of the channel (EcoMscL). The biophysical properties of the open MscL helped to model the open conformation and infer the pathway for the entire gating transition. The following experiments provided strong support to the atomic model of the gating process, and allowed to make further predictions. The work has advanced our understanding of tension-driven conformational transitions in membrane-embedded mechanosensory proteins, determine major energetic contributions and set the stage for further exploration of the whole family of mechanosensitive channels. The results have been published in seven experimental and theoretical papers, with three other papers currently in press or in preparation.

Sukharev, Sergei↗
NASA NTRS2006

Precipitation processes developed during TOGA COARE (1992), GATE (1974), SCSMEX (1998), and KWAJEX (1999): 3D Cloud Resolving Model Simulation

Real clouds and cloud systems are inherently three-dimensional (3D). Because of the limitations in computer resources, however, most cloud-resolving models (CRMs) today are still two-dimensional (2D). A few 3D CRMs have been used to study the response of clouds to large-scale forcing. In these 3D simulations, the model domain was small, and the integration time was 6 hours. Only recently have 3D experiments been performed for multi-day periods for tropical cloud systems with large horizontal domains at the National Center for Atmospheric Research (NCAR), NOAA GFDL, the U.K. Met. Office, Colorado State University and NASA Goddard Space Flight Center. An improved 3D Goddard Cumulus Ensemble (GCE) model was recently used to simulate periods during TOGA COARE (December 19-27, 1992), GATE (september 1-7, 1974), SCSMEX (May 18-26, June 2-11, 1998) and KWAJEX (August 7-13, August 18-21, and August 29-September 12, 1999) using a 512 by 512 km domain and 41 vertical layers. The major objectives of this paper are: (1) to identify the differences and similarities in the simulated precipitation processes and their associated surface and water energy budgets in TOGA COARE, GATE, KWAJEX, and SCSMEX, and (2) to asses the impact of microphysics, radiation budget and surface fluxes on the organization of convection in tropics.

Tao, W.-K.↗
NASA NTRS1991

Front-illuminated CCD with open pinned-phase region and two-phase transfer gate regions

A front-illuminated CCD of relative high quantum efficiency (QE) and high charge transfer efficiency (CTE) utilizes an open-phase region for receiving photons and two-phase gate regions (.phi..sub.1 and .phi..sub.2) for transferring electrons collected in one pixel to the next. The open-phase region is implanted with additional n-type elements (phosphorus) in order to increase the potential of the CCD channel in the open-phase region for collection of electrons and additionally implanted with concentrated and very shallow p-type elements (boron) to pin the surface of the n-channel in the open-phase region to OV, while gate region .phi..sub.1 and .phi..sub.2 are biased to -3.5V and driven to +10V by a two-phase transfer clock. The open pinned-phase (OPP) region thus permits two-phase transfer clocking and optimum reception of photons during the integration periods between transfer clock pulses.

Janesick, James R.↗