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NASA NTRS1987

Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon

GaAs layers have been grown on porous silicon (PS) substrates with good crystallinity by molecular beam epitaxy. In spite of the surface irregularity of PS substrates, no surface morphology deterioration was observed on epitaxial GaAs overlayers. A 10-percent Rutherford backscattering spectroscopy minimum channeling yield for GaAs-on-PS layers as compared to 16 percent for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers. n-type GaAs/p-type PS heterojunction diodes were fabricated with good rectifying characteristics.

Lin, T. L.↗

NASA NTRS1987

Characteristics of annealed p/n junctions between GaAs and Si(100)

Electrical characteristics of a GaAs(p)/Si(n) interface were determined from capacitance-voltage, current-voltage, and secondary ion mass spectroscopy (SIMS) measurements and compared to those on GaAs(p) epitaxial layers on GaAs(n) substrates. The comparison was made between the junctions as grown, and after an anneal at 850 C for 20 min in 10 percent forming gas under an As overpressure. For the GaAs/Si junction the ideality factor changed from 2 or larger to 1.5 and the apparent intercept voltage changed from 2.5 to 1.3 V after annealing. For the GaAs homojunction, the intercept voltage increased from 1.1 to 1.3 V. In addition, the excess current in the forward and reverse bias conditions dropped drastically in the heterojunction. No movement of the metallurgical junction was discernible to within the resolution capability of SIMS. The junction properties obtained by annealing suggest an atomic restructuring of the Si(100) interface during growth or annealing. These new results raise the possibility that the GaAs/Si interface can be made into an electrically viable junction and incorporated into active devices.

Unlu, M. S.↗

NASA NTRS1987

CuInSe2/ZnSe solar cells using reactively sputter-deposited ZnSe

Results on CuInSe2/ZnSe thin-film heterojunction photovoltaic devices are presented. By the use of reactive magnetron cosputtering of Zn and In dopant in Ar/H2Se, ZnSe thin films have been deposited on glass and conducting SnO2-coated glass substrates with resistivity as low as 20 ohm-cm at deposition temperatures as low as 120 C. Preliminary ZnSe depositions onto CuInSe2 films supplied by industrial laboratories are encouraging. Reactive-sputter-deposition parameters for ZnSe have yet to be optimized for CuInSe2 substrates; however, open-circuit voltages as high as 430 mV were obtained. The highest short-circuit current density, as determined by spectral response weighted for AM1.5 global insulation, was 37.4 mA/sq cm. In all cases, a highly conductive ZnO film was overcoated onto the ZnSe to reduce the overall sheet resistance.

Nouhi, A.↗

NASA NTRS1989

Ultra-thin, light-trapping silicon solar cells

Design concepts for ultra-thin (2 to 10 microns) high efficiency single-crystal silicon cells are discussed. Light trapping allows more light to be absorbed at a given thickness, or allows thinner cells of a given Jsc. Extremely thin cells require low surface recombination velocity at both surfaces, including the ohmic contacts. Reduction of surface recombination by growth of heterojunctions of ZnS and GaP on Si has been demonstrated. The effects of these improvements on AM0 efficiency is shown. The peak efficiency increases, and the optimum thickness decreases. Cells under 10 microns thickness can retain almost optimum power. The increase of absorptance due to light trapping is considered. This is not a problem if the light-trapping cells are sufficiently thin. Ultra-thin cells have high radiation tolerance. A 2 microns thick light-trapping cell remains over 18 percent efficient after the equivalent of 20 years in geosynchronous orbit. Including a 50 microns thick coverglass, the thin cells had specific power after irradiation over ten times higher than the baseline design.

Landis, Geoffrey A.↗

NASA NTRS1989

A Normal Incidence X-ray Telescope (NIXT) sounding rocket payload

Work on the High Resolution X-ray (HRX) Detector Program is described. In the laboratory and flight programs, multiple copies of a general purpose set of electronics which control the camera, signal processing and data acquisition, were constructed. A typical system consists of a phosphor convertor, image intensifier, a fiber optics coupler, a charge coupled device (CCD) readout, and a set of camera, signal processing and memory electronics. An initial rocket detector prototype camera was tested in flight and performed perfectly. An advanced prototype detector system was incorporated on another rocket flight, in which a high resolution heterojunction vidicon tube was used as the readout device for the H(alpha) telescope. The camera electronics for this tube were built in-house and included in the flight electronics. Performance of this detector system was 100 percent satisfactory. The laboratory X-ray system for operation on the ground is also described.

Golub, Leon↗

NASA NTRS1988

Properties of multiple quantum wells and their use in high-speed detectors and modulators

Quantum well systems lattice matched to GaAs and InP have emerged as important materials for use in long wavelength optoelectronic devices. Intrinsic problems associated with the growth of these quantum wells by molecular beam epitaxy are discussed and the luminescence properties of state-of-art quantum wells, using novel growth techniques are described. Finally, the properties of detectors, modulators and integrated devices made with these heterojunction materials are described and discussed.

Bhattacharya, Pallab↗

NASA NTRS1988

The design of radiation-hardened ICs for space - A compendium of approaches

Several technologies, including bulk and epi CMOS, CMOS/SOI-SOS (silicon-on-insulator-silicon-on-sapphire), CML (current-mode logic), ECL (emitter-coupled logic), analog bipolar (JI, single-poly DI, and SOI) and GaAs E/D (enhancement/depletion) heterojunction MESFET, are discussed. The discussion includes the direct effects of space radiation on microelectronic materials and devices, how these effects are evidenced in circuit and device design parameter variations, the particular effects of most significance to each functional class of circuit, specific techniques for hardening high-speed circuits, design examples for integrated systems, including operational amplifiers and A/D (analog/digital) converters, and the computer simulation of radiation effects on microelectronic ISs.

Kerns, Sherra E.↗

NASA NTRS1990

AIAs Diffusion/Schottky Barrier on GaAs

Ultrathin epitaxial film of AIAs deposited on GaAs substrate to serve as Schottky barrier and/or as barrier to diffusion. Deposited without interrupting processing vacuum in which substrate deposited and in which any subsequent layers deposited. In new technique, epitaxial film of AIAs deposited directly on GaAs substrate to depth of only two atomic layers - less than 1 nanometer thick. Film thin enough so it does not constitute electronic barrier, but thick enough to act as barrier to interdiffusion of gold and GaAs. Film also used as barrier to interdiffusion of dopants at heterojunctions.

Kaiser, William J.↗

NASA NTRS1988

Thin, light-trapping silicon solar cells for space

Ultrathin silicon solar cells with high efficiency and radiation tolerance can be made by incorporating light-trapping and heterojunction surface passivation. Calculations show that a 2-micron-thick light-trapping cell remains over 18 percent efficient after the equivalent of 20 years in geosynchronous orbit. Including a 50-micron coverglass, the thin cells had, after irradiation, a specific power over ten times higher than that of the baseline design.

Landis, Geoffrey A.↗

NASA NTRS1989

Monolithically integrated two-dimensional arrays of optoelectronic threshold devices for neural network applications

A monolithic 10 x 10 two-dimensional array of 'optical neuron' optoelectronic threshold elements for neural network applications has been designed, fabricated, and tested. Overall array dimensions are 5 x 5 mm, while the individual neurons, composed of an LED that is driven by a double-heterojunction bipolar transistor, are 250 x 250 microns. The overall integrated structure exhibited semiconductor-controlled rectifier characteristics, with a breakover voltage of 75 V and a reverse-breakdown voltage of 60 V; this is attributable to the parasitic p-n-p transistor which exists as a result of the sharing of the same n-AlGaAs collector between the transistors and the LED.

Kim, J. H.↗

NASA NTRS1989

Room-temperature InGaAs detector arrays for 2.5 microns

This paper describes new alloy heterojunction detectors of In(.8)Ga(.2)As/InAs(.6)P(.4) which can detect light between 1.7 and 2.6 microns with 50 percent quantum efficiency and 5 mA/sq cm dark current (-1 V) density at room temperature. Wafer probe data showed that over 50 good contiguous 100 micron diameter devices (spaced 400 microns) could be made on a 25 x 30 mm wafer with overall yield above 93 percent. The ability to operate under -1 V reverse bias makes these devices ideally compatible with existing commercial multiplexer readouts.

Olsen, G. H.↗

NASA NTRS1991

High-Gain AlxGa1-xAs/GaAs Transistors For Neural Networks

High-gain AlxGa1-xAs/GaAs npn double heterojunction bipolar transistors developed for use as phototransistors in optoelectronic integrated circuits, especially in artificial neural networks. Transistors perform both photodetection and saturating-amplification functions of neurons. Good candidates for such application because structurally compatible with laser diodes and light-emitting diodes, detect light, and provide high current gain needed to compensate for losses in holographic optical elements.

Kim, Jae-Hoon↗

NASA NTRS1990

Status of LWIR HgCdTe infrared detector technology

The performance requirements that today's advanced Long Wavelength Infrared (LWIR) focal plane arrays place on the HgCdTe photovoltaic detector array are summarized. The theoretical performance limits for intrinsic LWIR HgCdTe detectors are reviewed as functions of cutoff wavelength and operating temperature. The status of LWIR HgCdTe photovoltaic detectors is reviewed and compared to the focal plane array (FPA) requirements and to the theoretical limits. Emphasis is placed on recent data for two-layer HgCdTe PLE heterojunction photodiodes grown at Loral with cutoff wavelengths ranging between 10 and 19 microns at temperatures of 70 to 80 K. Development trends in LWIR HgCdTe detector technology are outlined, and conclusions are drawn about the ability for photovoltaic HgCdTe detector arrays to satisfy a wide variety of advanced FPA array applications.

Reine, M. B.↗

NASA NTRS1990

Resonant tunneling IR detectors

Researchers propose a novel semiconductor heterojunction photodetector which would have a very low dark current and would be voltage tunable. A schematic diagram of the device and its band structure are shown. The two crucial components of the device are a cathode (InGaAs) whose condition band edge is below the conduction band edge of the quantum wells and a resonant tunneling filter (GaAs-AlGaAs). In a standard resonant tunneling device the electrodes are made of the same material as the quantum wells, and this device becomes highly conducting when the quantum levels in the wells are aligned with the Fermi level in the negatively biased electrode. In contrast, the researchers device is essentially non-conducting under the same bias conditions. This is because the Fermi Level of the cathode (InGaAs) is still well below the quantum levels so that no resonant transport occurs and the barriers (AlGaAs) effectively block current flow through the device. However, if light with the same photon energy as the conduction-band discontinuity between the cathode and the quantum wells, E sub c3-E sub c1, is shone on the sample, free carriers will be excited to an energy corresponding to the lowest quantum level in the well closest to the cathode (hv plue E sub c1 = E sub o). These electrons will resonantly tunnel through the quantum wells and be collected as a photocurrent in the anode (GaAs). To improve the quantum efficiency, the cathode (InGaAs) should be very heavily doped and capped with a highly reflective metal ohmic contact. The thickness of the device should be tailored to optimize thin film interference effects and afford the maximum absorption of light. Because the device relies on resonant tunneling, its response should be very fast, and the small voltages needed to change the responsivity should allow for very high frequency modulation of the photocurrent. In addition, the device is tuned to a specific photon energy so that it can be designed to detect a fairly narrow range of wavelengths. This selectivity is important for reducing the photocurrent due to spurious light sources.

Woodall, Jerry M.↗

NASA NTRS1990

Low dark current photovoltaic multiquantum well long wavelength infrared detectors

The authors have, for the first time, demonstrated photovoltaic detection for an multiple quantum well (MQW) detector. With a blocking layer, the MQW detector exhibits Schottky I-V characteristics with extremely low dark current and excellent ideality factor. The dark current is 5 times 10(exp -14) A for an 100x100 square micron 10 micron detector at 40 K, 8 to 9 orders of magnitude lower than that of a similar 10 micron MQW detector without blocking layer. The ideality factor is about 1.01 to 1.05 at T = 40 to 80 K. The measured barrier height is consistent with the energy difference between first excited states and ground states, or the peak of spectral response. The authors also, for the first time, report the measured effective Richardson constant (A asterisk asterisk) for the GaAs/AlGaAs heterojunction using this blocking layer structure. The A asterisk asterisk is low approx. 2.3 A/sq cm/K(exp 2).

Wu, C. S.↗

NASA NTRS1992

Reflections From Plasma Would Enhance Infrared Detector

Quantum efficiency of proposed photoemission semiconductor detector of long-wavelength infrared radiation enhanced by multiple passes of radiation. Device has features of back-to-back heterojunction internal-photoemission (HIP) detector, and Fabry-Perot interferometer. Arrays of devices of this type incorporated into integrated-circuit infrared imaging devices.

Maserjian, Joseph↗

NASA NTRS1992

Barrier/n/n+ Varactor Frequency Multipliers

Barrier/n/n+ (BNN+) varactor diodes developed as frequency multipliers at millimeter and submillimeter wavelengths. Devices required to serve as frequency triplers or quintuplers to provide powers of order of milliwatts at frequencies from 0.1 THz to about 1 THz. Feature Mott or heterojunction barriers and back-to-back diode configuration, which make it possible to obtain symmetrical capacitance-versus-voltage characteristics with high ratio between maximum and minimum capacitances. Extension of barrier/intrinsic/n+ (BIN+) concept described in "BIN Diode for Submillimeter Wavelengths" (NPO-17258).

Lieneweg, Udo↗

NASA NTRS1992

Si1-XGex/Si-Heterojunction Internal-Photoemission Detectors

Cutoff wavelengths tailored by choice of Ge content. Infrared detectors based on internal photoemission at Si1-xGex/Si heterojunctions exhibited photoresponses at wavelengths from 2 to 12 micrometers in initial tests. Si1-xGex/Si-heterojunction internal-photoemission detectors tailored for use at wavelengths of order of 10 micrometers. Future developments expected to include integration of such devices with silicon readout circuitry to form infrared-imaging arrays. Imaging arrays operating in important wavelength range of 8 to 12 micrometers can be fabricated relatively inexpensively for use in outer-space, military, and industrial applications.

Lin, True-Lon↗