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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRS2015

Fabrication of Feedhorn-Coupled Transition Edge Sensor Arrays for Measurement of the Cosmic Microwave Background Polarization

Characterization of the minute cosmic microwave background (CMB) polarization signature requires multi-frequency high-throughput precision instrument systems. We have previously described the detector fabrication of a 40 gigahertz focal plane and now describe the fabrication of a 37-element dual-polarization detector module for measurement of the CMB at 90 gigahertz. The 72-TES (Transition Edge Sensor)-based bolometers in each module are coupled to a niobium-based planar orthomode transducer with integrated band defining filters implemented in microstrip transmission line. A single crystal silicon dielectric substrate serves as microstrip dielectric and as a thermal link between the membrane isolated MoAu TES operating at 150 millikelvins and the heat bath. A short silicon leg between the heat bath and the TES bolometer is designed for ballistic phonon transport and provides improved process control and uniformity of thermal conductance in the presence of phonon scattering on roughened surfaces. Micro-machined structures are used to realize the orthomode transducer backshort, provide out of band signal rejection, and a silicon photonic choke for feedhorn coupling are described. The backshort, choke wafer, and detector wafer are indium bump-bonded to create a single 37-element dual-polarization detector module. Fourteen such hexagonally shaped modules each 80 millimeters in size comprise two focal planes. These, along with the recently delivered 40 gigahertz focal plane, will survey a large fraction of the sky as part of the Johns Hopkins University-led ground-based CLASS (Cosmology Large Angular Scale Surveyor) telescope.

Detectors↗
DOE OSTI2023

All-silicon quantum light source by embedding an atomic emissive center in a nanophotonic cavity

Silicon is the most scalable optoelectronic material but has suffered from its inability to generate directly and efficiently classical or quantum light on-chip. Scaling and integration are the most fundamental challenges facing quantum science and technology. We report an all-silicon quantum light source based on a single atomic emissive center embedded in a silicon-based nanophotonic cavity. We observe a more than 30-fold enhancement of luminescence, a near-unity atom-cavity coupling efficiency, and an 8-fold acceleration of the emission from the all-silicon quantum emissive center. Our work opens immediate avenues for large-scale integrated cavity quantum electrodynamics and quantum light-matter interfaces with applications in quantum communication and networking, sensing, imaging, and computing.

36 MATERIALS SCIENCE↗
NASA NTRS1981

Investigation of direct integrated optics modulators

Direct optical modulation techniques applicable to integrated optical data preprocessors were studied. Emphasis was placed on the analysis and fabrication of a field effect type modulator. A series of computer modeling studies were performed to determine the effects of semiconductor cladding on the fields of propagating waves in planar dielectric waveguides. These studies predicted that changes in the propagation characteristics of waveguides clad with silicon and gallium arsenide could be made large enough to be useful in modulators. These effects are dependent on the complex permittivity and thickness of the cladding. Since the conductivity of the cladding can be changed by the photon generation of hole-electron pairs, incoherent light may be used as the input to modulate a coherent light beam. Waveguides were fabricated and silicon claddings were applied to verify the theoretical predictions.

Batchman, T. E.↗
NASA NTRS1990

Direct detection optical intersatellite link at 220 Mbps using AlGaAs laser diode and silicon APD with 4-ary PPM signaling

A newly developed 220 Mbps free-space 4-ary pulse position modulation (PPM) direct detection optical communication system is described. High speed GaAs integrated circuits were used to construct the PPM encoder and receiver electronic circuits. Both PPM slot and word timing recovery were provided in the PPM receiver. The optical transmitter consisted of an AlGaAs laser diode (Mitsubishi ML5702A, lambda=821nm) and a high speed driver unit. The photodetector consisted of a silicon avalanche photodiode (APD) (RCA30902S) preceded by an optical interference filter (delta lambda=10nm). Preliminary tests showed that the self-synchronized PPM receiver could achieve a receiver bit error rate of less than 10(exp -6) at 25 nW average received optical signal power or 360 photons per transmitted information bit. The relatively poor receiver sensitivity was believed to be caused by the insufficient electronic bandwidth of the APD preamplifier and the poor linearity of the preamplifier high frequency response.

Sun, Xiaoli↗
DOE OSTI2021

Nanotesla Magnetometry with the Silicon Vacancy in Silicon Carbide

Silicon carbide is a promising host material for spin-defect-based quantum sensors owing to its commercial availability and established techniques for electrical and optical microfabricated device integration. The negatively charged silicon vacancy is one of the leading spin defects studied in silicon carbide owing to its near-telecom photoemission, high spin number, and nearly temperature-independent ground-state zero-field splitting. We report the realization of nanotesla shot-noise-limited ensemble magnetometry based on optically detected magnetic resonance with the silicon vacancy in 4H silicon carbide. By coarsely optimizing the anneal parameters and minimizing power broadening, we achieve a sensitivity of 50 nT/√Hz and a theoretical shot-noise-limited sensitivity of 3.5 nT/√Hz. This is accomplished without utilizing complex photonic engineering, control protocols, or applying excitation powers greater than a watt. This work demonstrates that the silicon vacancy in silicon carbide provides a low-cost and simple approach to quantum sensing of magnetic fields.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1995

Fine Pitch Grids for an X-Ray Solar Imaging Spectrometer Fabricated by Optical Lithography and XeF2 Etching

Fine-pitch, sub-collimating X-ray grids have been developed for an instrument in the High Energy Solar Spectroscopic Imager , a proposed NASA mission. In addition to high-energy x- rays, the instrument requires collimation of photons with energies of less than 4 keV such that free-standing grids are required that have no material between the grid slats. Fabrication of these grids is described.

x-ray↗
DOE OSTI2024

Benchmarking of X‐Ray Fluorescence Microscopy with Ion Beam Implanted Samples Showing Detection Sensitivity of Hundreds of Atoms

Abstract Single impurities in insulators are now often used for quantum sensors and single photon sources, while nanoscale semiconductor doping features are being constructed for electrical contacts in quantum technology devices, implying that new methods for sensitive, non‐destructive imaging of single‐ or few‐atom structures are needed. X‐ray fluorescence (XRF) can provide nanoscale imaging with chemical specificity, and features comprising as few as 100 000 atoms have been detected without any need for specialized or destructive sample preparation. Presently, the ultimate limits of sensitivity of XRF are unknown – here, gallium dopants in silicon are investigated using a high brilliance, synchrotron source collimated to a small spot. It is demonstrated that with a single‐pixel integration time of 1 s, the sensitivity is sufficient to identify a single isolated feature of only 3000 Ga impurities (a mass of just 350 zg). With increased integration (25 s), 650 impurities can be detected. The results are quantified using a calibration sample consisting of precisely controlled numbers of implanted atoms in nanometer‐sized structures. The results show that such features can now be mapped quantitatively when calibration samples are used, and suggest that, in the near future, planned upgrades to XRF facilities might achieve single‐atom sensitivity.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Effect of p-doping on the intensity noise of epitaxial quantum dot lasers on silicon

This work experimentally investigates the impact of p-doping on the relative intensity noise (RIN) properties and subsequently on the modulation properties of semiconductor quantum dot (QD) lasers epitaxially grown on silicon. Owing to the low threading dislocation density and the p-modulation doped GaAs barrier layer in the active region, the RIN level is found very stable with temperature with a minimum value of − <#comment/> 150 d B / H z . The dynamical features extracted from the RIN spectra show that p-doping between zero and 20 holes/dot strongly modifies the modulation properties and gain nonlinearities through increased internal losses in the active region and thereby hinders the maximum achievable bandwidth. Overall, this Letter is important for designing future high-speed and low-noise QD devices integrated in future photonic integrated circuits.

Duan, Jianan (ORCID:0000000177104287)↗
NASA NTRS2011

NASA Tech Briefs, January 2011

The topics include: 1) Distributed Aerodynamic Sensing and Processing Toolbox; 2) Collaborative Supervised Learning for Sensor Networks; 3) Hazard Detection Software for Lunar Landing; 4) Onboard Nonlinear Engine Sensor and Component Fault Diagnosis and Isolation Scheme; 5) Network-Capable Application Process and Wireless Intelligent Sensors for ISHM; 6) Interface Supports Multiple Broadcast Transceivers for Flight Applications; 7) FPGA Sequencer for Radar Altimeter Applications; 8) Miniature Sapphire Acoustic Resonator - MSAR; 9) Process-Hardened, Multi-Analyte Sensor for Characterizing Rocket Plume Constituents; 10) SAD5 Stereo Correlation Line-Striping in an FPGA; 11) Hybrid Composite Cryogenic Tank Structure; 12) Nanoscale Deformable Optics; 13) Reliability-Based Design Optimization of a Composite Airframe Component; 14) Zinc Oxide Nanowire Interphase for Enhanced Lightweight Polymer Fiber Composites; 15) Plasma Igniter for Reliable Ignition of Combustion in Rocket Engines; 16) Wire Test Grip Fixture; 17) A Sub-Hertz, Low-Frequency Vibration Isolation Platform; 18) Carbon Nanofibers Synthesized on Selective Substrates for Nonvolatile Memory and 3D Electronics; 19) Nanoparticle/Polymer Nanocomposite Bond Coat or Coating; 20) High-Resolution Wind Measurements for Offshore Wind Energy Development; 21) Spring Tire; 22) Marsviewer 2008; 23) Mission Services Evolution Center Message Bus; 24) Major Constituents Analysis for the Vehicle Cabin Atmosphere Monitor; 25) Astronaut Health Participant Summary Application; 26) Adaption of the AMDIS Method to Flight Status on the VCAM Instrument; 27) Natural Language Interface for Safety Certification of Safety-Critical Software; 28) Cryogenic Caging for Science Instrumentation; 29) Wide-Range Neutron Detector for Space Nuclear Applications; 30) In Situ Guided Wave Structural Health Monitoring System; 31) Multiplexed Energy Coupler for Rotating Equipment; 32) Attitude Estimation in Fractionated Spacecraft Cluster Systems; 33) Full Piezoelectric Multilayer-Stacked Hybrid Actuation/Transduction Systems; 34) Active Flow Effectors for Noise and Separation Control; 35) Method and System for Temporal Filtering in Video Compression Systems; 36) Apparatus for Measuring Total Emissivity of Small, Low-Emissivity Samples; 37) Multiple-Zone Diffractive Optic Element for Laser Ranging Applications; 38) Simplified Architecture for Precise Aiming of a Deep-Space Communication Laser Transceiver; 39) Two-Photon-Absorption Scheme for Optical Beam Tracking; 40) High-Sensitivity, Broad-Range Vacuum Gauge Using Nanotubes for Micromachined Cavities; 41) Wide-Field Optic for Autonomous Acquisition of Laser Link; 42) Extracting Zero-Gravity Surface Figure of a Mirror; 43) Modeling Electromagnetic Scattering From Complex Inhomogeneous Objects; 44) Visual Object Recognition and Tracking of Tools; 45) Method for Implementing Optical Phase Adjustment; 46) Visual SLAM Using Variance Grid Maps; 47) Rapid Calculation of Spacecraft Trajectories Using Efficient Taylor Series Integration; 48) Efficient Kriging Algorithms; 49) Predicting Spacecraft Trajectories by the WeavEncke Method; 50) An Augmentation of G-Guidance Algorithms; 51) Comparison of Aircraft Icing Growth Assessment Software; 52) Silicon-Germanium Voltage-Controlled Oscillator at 105 GHz; 53) Estimation of Coriolis Force and Torque Acting on Ares-1; 54) Null Lens Assembly for X-Ray Mirror Segments; and 55) High-Precision Pulse Generator.

Source record↗
DOE OSTI2021

Degradation mechanisms of 1.3 μm C-doped quantum dot lasers grown on native substrate

Here, the aim of this paper is to analyse the degradation modes of 1.3 μm InAs quantum dot laser diodes (QD LDs) grown by using carbon as a p-type dopant, as an alternative to beryllium. The devices were stressed at high current densities, to favor the onset of excited-state (ES) emission, and to study the related degradation phenomena. The study of QD LDs is of fundamental importance for the photonic integrated circuits (PICs). The investigation is based on two types of stress tests: 1) a current step stress and 2) a constant current stress. With these experiments we demonstrate that a) the current is a determining factor for the onset of the ES during the operation of such devices. b) the onset of ES is responsible for a rapid quenching of the ground state (GS) emission. c) stress induces a significant increase in the threshold current of the devices, that is ascribed to the lowering of the injection efficiency, which in turn can be explained by the easier escape of carriers from quantum dots (QDs) from ES energy levels. d) the contribution of defects on the optical and electrical degradation is also discussed.

42 ENGINEERING↗
DOE OSTI2026

Material-dependent photon ionizing radiation effects in Si and GaAs PIN diodes: A numerical investigation

We present a finite-element drift-diffusion-Poisson model in the Multiphysics Object-Oriented Simulation Environment (MOOSE) framework to compare the radiation response of silicon (Si) and gallium arsenide (GaAs) PIN diodes under high-energy photon irradiation. The model solves coupled carrier continuity and Poisson’s equations with Shockley-Read-Hall recombination, and is verified against standard analytical J-V behavior. Using a simplified 1D geometry with ideal Ohmic contacts, we quantify device response under forward and reverse bias with a 100 MeV photon flux. Under forward bias, Si exhibits markedly greater radiation sensitivity than GaAs, including larger increases in current density, stronger local field and carrier-product perturbations, and higher recombination. Under reverse bias, GaAs shows larger radiation-induced photocurrent and broader current-density peaks near junctions, indicating an advantage for photodetection. Integrated steady-state recombination is consistently higher in Si across voltages. Under periodic photon pulses, GaAs produces higher-amplitude photoresponse and settles more rapidly than Si. These results highlight material-dependent trade-offs for radiation-tolerant, high-speed optoelectronics and provide guidance for selecting PIN architectures in aerospace, nuclear, and high-energy physics environments.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Direct-bonded diamond membranes for heterogeneous quantum and electronic technologies

Diamond has superlative material properties for a broad range of quantum and electronic technologies. However, heteroepitaxial growth of single crystal diamond remains limited, impeding integration and evolution of diamond-based technologies. Here, we directly bond single-crystal diamond membranes to a wide variety of materials including silicon, fused silica, sapphire, thermal oxide, and lithium niobate. Our bonding process combines customized membrane synthesis, transfer, and dry surface functionalization, allowing for minimal contamination while providing pathways for near unity yield and scalability. We generate bonded crystalline membranes with thickness as low as 10 nm, sub-nm interfacial regions, and nanometer-scale thickness variability over 200 by 200 μm 2 areas. We measure spin coherence times T 2 for nitrogen vacancy centers in 150 nm-thick bonded membranes of up to 623 ± 21 μs, suitable for advanced quantum applications. We demonstrate multiple methods for integrating high quality factor nanophotonic cavities with the diamond heterostructures, highlighting the platform versatility in quantum photonic applications. Furthermore, we show that our ultra-thin diamond membranes are compatible with total internal reflection fluorescence (TIRF) microscopy, which enables interfacing coherent diamond quantum sensors with living cells while rejecting unwanted background luminescence. The processes demonstrated herein provide a full toolkit to synthesize heterogeneous diamond-based hybrid systems for quantum and electronic technologies.

color center↗
DOE OSTI2021

Integrated reference cavity with dual-mode optical thermometry for frequency correction

Photonic integrated resonators have advantages over traditional benchtop cavities in terms of size, weight, and cost with the potential to enable applications that require spectrally pure light. However, integrated resonators suffer from temperature-dependent frequency variations and are sensitive to external environmental perturbations, which hinders their usage in precision frequency applications. One solution is to use interrogation of the cavity temperature through dual-mode optical thermometry (DMOT) by measuring the shift of the resonance frequency difference between two polarization or optical frequency modes. Yet this approach has only been demonstrated in bulk-optic whispering gallery mode and fiber resonators. In this paper, we implement dual-mode optical thermometry in an ultra-high Q integrated silicon nitride resonator. A dual-mode resonance frequency difference temperature sensitivity of 188 ± <#comment/> 15 M H z / K is measured. We demonstrate feedforward DMOT frequency correction that, under an applied external temperature ramp, is able to reduce the optical frequency change to 0.31 kHz/s as compared to an uncorrected 10.03 kHz/s, a factor of 30 × <#comment/> reduction. These results show promise for on-chip frequency correction solutions for quantum, metrology, atomic, and coherent optical communications applications.

Zhao, Qiancheng (ORCID:0000000206968667)↗
DOE OSTI2022

Ultra-power-efficient heterogeneous III–V/Si MOSCAP (de-)interleavers for DWDM optical links

We discuss the design and demonstration of various III–V/Si asymmetric Mach–Zehnder interferometer (AMZI) and ring-assisted AMZI (de-)interleavers operating at O-band wavelengths with 65 GHz channel spacing. The wafer-bonded III–V/Si metal-oxide-semiconductor capacitor (MOSCAP) structure facilitates ultra-low-power phase tuning on a heterogeneous platform that allows for complete monolithic transceiver photonic integration. The second- and third-order MOSCAP AMZI (de-)interleavers exhibit cross-talk (XT) levels down to − 22 dB and − 32 dB with tuning powers of 83.0 nW and 53.0 nW, respectively. The one-, two-, and three-ring-assisted MOSCAP AMZI (de-)interleavers have XT levels down to − 27 dB, − 22 dB, and − 20 dB for tuning powers of 10.0 nW, 7220.0 nW, and 33.6 nW, respectively. The leakage current density is measured to be in the range of 1.6 – 27 μA / cm 2 . To the best of our knowledge, we have demonstrated for the first time, athermal III–V/Si MOSCAP (de-)interleavers with the lowest XT and reconfiguration power consumption on a silicon platform.

Cheung, Stanley (ORCID:0000000248860013)↗
DOE OSTI2026

Characterization of Digital Silicon Photomultipliers

Digital Silicon photomultipliers (Digital SiPMs) have become an increasingly viable option for single-photon detection due to their compact size and precise timing and resolution. The following work characterizes the noise performance of a diSiPM designed and tested in-house at Fermilab. The SiPM consists of a 26x32 array of single-photon avalanche diode (SPAD) cells. Through the implementation of a shift register masking circuit, individual SPAD cells can be enabled and disabled at will, allowing for precise detection measurements of single columns (accumulator channels) and cells. The provided circuit design operates on voltage clock pulses and collects data on clock edges allowing for precise tuning of the data collection process by varying the clock frequency, pulse width, and integration period.

Shoemaker, Oliver [U. Chicago (main)]↗
NASA NTRS2003

Packaging Considerations for Integrated RF Microphotonic Receiver at Ka-Band

The NASA Computing, Information and Communications Technology (CICT) Program is supporting the development of an RF microphotonic Ka-band receiver. The receiver consists of a lithium niobate micro-disk that enables the incoming RF signal (up to Ka-band) to be coupled to the optical signal (approx. 200 THz). The modulated optical signal is detected by the high-speed photonic signal processing electronics. When compared with an all-electronic approach, the microphotonic receiver technology offers 1 Ox smaller volume, smaller weight, and smaller power consumption, greater sensitivity, and optical isolation for applications in extreme environments. It could potentially be implemented to support planetary surface-to-surface and surface-to-relay communications, as well as high-data-rate inter-satellite links. We are currently studying a number of fabrication and integration issues that could result as this technology is advanced for potential insertion into a NASA mission. The results of our preliminary effort to integrate the RF microphotonic receiver components (e.g., the lithium niobate micro-disk, the optical elements, and the Ka-band patch antenna) on an etched silicon wafer will be presented, In addition, the concomitant integration and packaging issues, and the potential NASA applications will be discussed.

Nguyen, Hung↗
NASA NTRS2010

NASA Tech Briefs, July 2010

Topics covered include: Wirelessly Interrogated Wear or Temperature Sensors; Processing Nanostructured Sensors Using Microfabrication Techniques; Optical Pointing Sensor; Radio-Frequency Tank Eigenmode Sensor for Propellant Quantity Gauging; High-Temperature Optical Sensor; Integral Battery Power Limiting Circuit for Intrinsically Safe Applications; Configurable Multi-Purpose Processor; Squeezing Alters Frequency Tuning of WGM Optical Resonator; Automated Computer Access Request System; Range Safety for an Autonomous Flight Safety System; Fast and Easy Searching of Files in Unisys 2200 Computers; Parachute Drag Model; Evolutionary Scheduler for the Deep Space Network; Modular Habitats Comprising Rigid and Inflatable Modules; More About N2O-Based Propulsion and Breathable-Gas Systems; Ultrasonic/Sonic Rotary-Hammer Drills; Miniature Piezoelectric Shaker for Distribution of Unconsolidated Samples to Instrument Cells; Lunar Soil Particle Separator; Advanced Aerobots for Scientific Exploration; Miniature Bioreactor System for Long-Term Cell Culture; Electrochemical Detection of Multiple Bioprocess Analytes; Fabrication and Modification of Nanoporous Silicon Particles; High-Altitude Hydration System; Photon Counting Using Edge-Detection Algorithm; Holographic Vortex Coronagraph; Optical Structural Health Monitoring Device; Fuel-Cell Power Source Based on Onboard Rocket Propellants; Polar Lunar Regions: Exploiting Natural and Augmented Thermal Environments; Simultaneous Spectral Temporal Adaptive Raman Spectrometer - SSTARS; Improved Speed and Functionality of a 580-GHz Imaging Radar; Bolometric Device Based on Fluxoid Quantization; Algorithms for Learning Preferences for Sets of Objects; Model for Simulating a Spiral Software-Development Process; Algorithm That Synthesizes Other Algorithms for Hashing; Algorithms for High-Speed Noninvasive Eye-Tracking System; and Adapting ASPEN for Orbital Express.

Source record↗
DOE OSTI2022

Mid-Infrared Nonlinear Frequency Conversion Using Monolithic Barium Titanate on Silicon-on-Insulator

In this work, efficient nonlinear frequency conversion in the mid-infrared (mid-IR) region was demonstrated by a barium titanate (BTO) on a silicon-on-insulator (SOI) substrate. The BTO thin film was epitaxially grown by pulsed-laser deposition (PLD). The tensorial second order optical nonlinearity and the ferroelectric domain property of the BTO were characterized by the polarimetric mid-IR second harmonic generation (SHG) measurements. Azimuthal-dependent polarized SHG was modeled at different combinations of the nonlinear coefficient $d_{ij}$ and the domain fraction factor $ΔD^Y/ΔD^X$. Strong SHG intensity was experimentally observed over a broad spectrum at λ = 3.1 μm - 3.7 μm. A characteristic linear dependence between the SHG signal and the square of the pumping laser intensity was observed. The monolithic integration between the epitaxial BTO and the Si provides a compact platform for efficient on-chip light generation and quantum photonic technologies.

25 ENERGY STORAGE↗