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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Elementally Resolved Dissolution Kinetics of a Ni-Fe-Cr-Mn-Co Multi-Principal Element Alloy in Sulfuric Acid Using AESEC-EIS

Atomic emission spectroelectrochemistry (AESEC) combined with linear sweep voltammetry (LSV) and electrochemical impedance spectroscopy (EIS) provided insights on both active and passive dissolution of Ni-Fe-Cr-Mn-Co multi-principal element alloy. Elemental dissolution rates measured by AESEC during open circuit experiment were in agreement with those extrapolated from AESEC-LSV and indicated element-specific dissolution tendencies. AESEC-EIS at open circuit potential showed nearly in-phase elemental dissolution during potential modulation which suggests direct dissolution from the alloy surface to the electrolyte. In the passive potential domain, no oscillation of the elemental dissolution rate was detected by AESEC-EIS, suggesting non-oxidative chemical dissolution of the outer layer of the passive film. In this case, dissolution at the passive film/electrolyte interface was equal to the metal oxidation rate (passive current density) at the metal/passive film interface and the passive current density was independent of potential.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Real-time series resistance monitoring in photovoltaic systems

A device includes at least one processor configured to determine a target irradiance value based on an operating current value of a photovoltaic (PV) device, a short-circuit current value of the PV device, and an operating irradiance value of the PV device. The at least one processor is also configured to determine an open-circuit voltage value of the PV device at the target irradiance value, determine a series resistance value of the PV device based on an operating voltage value of the PV device, the operating current value, and the open-circuit voltage value at the target irradiance value, and execute at least one programmatic action based on the series resistance value.

14 SOLAR ENERGY↗
NASA NTRS1987

A Surface-Controlled Solar Cell

Open-circuit voltage and cell efficiency increased. Proposed technique for controlling recombination velocity on solar-cell surfaces provides cells of increased efficiency and open-circuit voltage. In present cells, uncontrolled surface recombination velocity degrades opencircuit voltage and efficiency. In cell using proposed technique, transparent conducting layer, insulated from cell contacts, biased to enable variable control of surface recombination velocity.

Daud, T.↗
NASA NTRS1981

High- and low-resistivity silicon solar cells

Attention is given to recent work at COMSAT Laboratories on improving silicon solar cell efficiencies and open-circuit voltages for both high (more than 1000 ohm-cm) and low (less than 1 ohm-cm) resistivities. It is noted that open-circuit voltages above 650 mV have been obtained for 0.1 ohm-cm cells and that air mass zero efficiencies of 12.5% have been measured from 4-mil 1,250 ohm-cm.

Meulenberg, A., Jr.↗
NASA NTRS1983

Triac failure detector

A failure detector is provided for detecting unidirectional failures in triacs, particularly as used in power factor controllers for induction motors. In a first embodiment, the triac voltage waveform is sensed and upon detection of an unbalanced signal, corresponding to failure of the triac in either the positive or negative direction, the triac is turned full on in both directions. In a second embodiment, a pair of pulsed signals are derived, the pulse durations of which are proportional to the phase difference between the load current and voltage for each half cycle, and the triac is turned full on responsive to a difference in pulse duration between the half cycle signals. An unidirectional open circuit detector is adapted to use a signal from either of the first and second embodiment to turn the triac off in response to an open circuit failure in either direction.

Nola, F. J.↗
NASA NTRS1984

18-percent efficient terrestrial silicon solar cells

Silicon solar cells are described which operate at energy conversion efficiencies in excess of 18 percent under standard terrestrial test conditions (AM1.5, 100 mW/sq cm, 28 C). These are believed to be the most efficient silicon cells reported to date. The high efficiency is a result of the combination of high open-circuit voltage due to the careful attention paid to passivation of the top surface of the cell; high fill factors due to the high open-circuit voltage and low parasitic resistance losses; and high short-circuit current due to the use of shallow diffusions, a low grid coverage, and an optimized double-layer antireflection coating.

Blakers, A. W.↗
NASA NTRS1989

JPS heater and sensor lightning qualification

Simulated lightning strike testing of the Redesigned Solid Rocket Motor (RSRM) field joint protection system heater assembly was performed at Thiokol Corp., Wendover Lightning Facility. Testing consisted of subjecting the lightning evaluation test article to simulated lightning strikes and evaluating the effects of heater cable transients on cables within the systems tunnel. The maximum short circuit current coupled onto a United Space Boosters, Inc. operational flight cable within the systems tunnel, induced by transients from all cables external to the systems tunnel, was 92 amperes. The maximum open-circuit voltage coupled was 316 volts. The maximum short circuit current coupled onto a United Space Boosters, Inc. operational flight cable within the systems tunnel, induced by heater power cable transients only, was 2.7 amperes; the maximum open-circuit voltage coupled was 39 volts. All heater power cable induced coupling was due to simulated lightning discharges only, no heater operating power was applied during the test. The results showed that, for a worst-case lightning discharge, the heater power cable is responsible for a 3.9 decibel increase in voltage coupling to operational flight cables within the systems tunnel. Testing also showed that current and voltage levels coupled onto cables within the systems tunnel are partially dependant on the relative locations of the cables within the systems tunnel.

Cook, M.↗
DOE OSTI2024

Ion-specific phenomena limit energy recovery in forward-biased bipolar membranes

The ability for bipolar membranes (BPMs) to interconvert voltage and pH makes them attractive materials for use in energy conversion and storage. Reverse-biased BPMs, which use electrical voltage to dissociate water into acid and base, have become increasingly well studied. However, forward-biased BPMs (FB-BPMs), in which voltage is extracted from pH gradients through recombination, require further study. Here physics-based modeling elucidates how the complex coupling of transport and kinetics dictates the performance of FB-BPMs in electrochemical devices. Simulations reveal that the open-circuit potential of FB-BPMs is dictated by the balance of ion recombination and crossover, where recombination of buffering counter-ions attenuates the open-circuit potential. Counter-ion mass-transport limitations and uptake of ionic impurities limit achievable current densities by reducing the applied pH gradient or the available fixed-charge sites that mediate recombination. Further, the model highlights the importance of selective ion management in mitigating energy losses and provides insight into the rational material design of FB-BPMs for energy applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1980

Thin n-i-p radiation-resistant solar cell feasibility study

Silicon solar cells were fabricated to verify the predictions that: (1) thin n(+)pp(+) cells can provide high values of open circuit voltage even when high resistivity base material ( 1000 omega-cm) is used; (2) cells with good p(+) back contacts will display an increase in open circuit voltage with decreasing cell thickness; and (3) high quality, thin, high resistivity, solar cells can be made using processing compatible with conventional practice. Analysis of I-V and spectral response measurements of these cells confirmed theoretical predictions and thereby pointed to voltages beyond the near 600 mV obtained in this study.

Allison, J. F.↗
NASA NTRS1984

High-efficiency silicon solar cells

Silicon solar cells are described which operate at energy conversion efficiencies independently measured at 18.7 percent under standard terrestrial test conditions (AM1.5, 100 mW/sq cm, 28 C). These are apparently the most efficient silicon cells fabricated to date. The high-efficiency results from a combination of high open-circuit voltage due to the careful attention paid to the passivation of the top surface of the cell, high fill factor due to the high open-circuit voltage and low parasitic resistance losses, and high short-circuit current density due to the use of shallow diffusions, a low grid coverage, and an optimized double layer antireflection coating.

Green, M. A.↗
NASA NTRS1979

Auger recombination in heavily doped shallow-emitter silicon p-n-junction solar cells, diodes, and transistors

A rigorous analytic evaluation of an emitter model that includes Auger recombination but excludes bandgap narrowing is presented. It is shown that such a model cannot explain the experimentally observed values of the open-circuit voltage in p-n-junction silicon solar cells. Thus physical mechanisms in addition to Auger recombination are responsible for the experimentally observed values of the open-circuit voltage in silicon solar cells and the common-emitter current gain in bipolar transistors.

Shibib, M. A.↗
NASA NTRS1975

Effects of high doping levels silicon solar cell performance

The significance of the heavy doping effects (HDE) on the open-circuit voltage of silicon solar cells is assessed. Voltage calculations based on diffusion theory are modified to include the first order features of the HDE. Comparisions of the open-circuit voltage measured for cells of various base resistivities are made with those calculated using the diffusion model with and without the HDE. Results indicate that the observed variation of voltage with base resistivity is predicted by these effects. A maximum efficiency of 19% (AM0) and a voltage of 0.7 volts are calculated for 0.1 omega-cm cells assuming an optimum diffused layer impurity profile.

Godlewski, M. P.↗
NASA NTRS2013

RF Reference Switch for Spaceflight Radiometer Calibration

The goal of this technology is to provide improved calibration and measurement sensitivity to the Soil Moisture Active Passive Mission (SMAP) radiometer. While RF switches have been used in the past to calibrate microwave radiometers, the switch used on SMAP employs several techniques uniquely tailored to the instrument requirements and passive remote-sensing in general to improve radiometer performance. Measurement error and sensitivity are improved by employing techniques to reduce thermal gradients within the device, reduce insertion loss during antenna observations, increase insertion loss temporal stability, and increase rejection of radar and RFI (radio-frequency interference) signals during calibration. The two legs of the single-pole double-throw reference switch employ three PIN diodes per leg in a parallel-shunt configuration to minimize insertion loss and increase stability while exceeding rejection requirements at 1,413 MHz. The high-speed packaged diodes are selected to minimize junction capacitance and resistance while ensuring the parallel devices have very similar I-V curves. Switch rejection is improved by adding high-impedance quarter-wave tapers before and after the diodes, along with replacing the ground via of one diode per leg with an open circuit stub. Errors due to thermal gradients in the switch are reduced by embedding the 50-ohm reference load within the switch, along with using a 0.25-in. (approximately equal to 0.6-cm) aluminum prebacked substrate. Previous spaceflight microwave radiometers did not embed the reference load and thermocouple directly within the calibration switch. In doing so, the SMAP switch reduces error caused by thermal gradients between the load and switch. Thermal issues are further reduced by moving the custom, highspeed regulated driver circuit to a physically separate PWB (printed wiring board). Regarding RF performance, previous spaceflight reference switches have not employed high-impedance tapers to improve rejection. The use of open-circuit stubs instead of a via to provide an improved RF short is unique to this design. The stubs are easily tunable to provide high rejection at specific frequencies while maintaining very low insertion loss in-band.

Knuble, Joseph↗
NASA NTRS1987

Long-term storage of nickel-hydrogen cells

Representative samples of nickel hydrogen cells for the INTELSAT program were used to evaluate the effects of prolonged storage under passive conditions such as open circuit discharged at 0 C, room temperature, and -20 C, and under quasidynamic conditions such as top-off charge and trickle charge. Cell capacity declines when cells are stored open-circuit discharged at room temperature, and a second plateau occurs in the discharge curve. Capacity loss was 47 percent for a cell with hydrogen precharge and 24.5 percent for one with no hydrogen precharge. Capacity recovery was observed following top-off charge storage of cells which had exhibited faded capacity as a result of passive storage at room temperature. Cells stored either at -20 C or on trickle charge maintained their capacity. At 0 C storage, the capacity of all three cells under tests was greater than 55 Ah (which exceeds the required minimum of 44 Ah) after 7 months.

Vaidyanathan, Hari↗
NASA NTRS1981

Fabrication of multijunction high voltage concentrator solar cells by integrated circuit technology

Standard integrated circuit technology has been developed for the design and fabrication of planar multijunction (PMJ) solar cell chips. Each 1 cm x 1 cm solar chip consisted of six n(+)/p, back contacted, internally series interconnected unit cells. These high open circuit voltage solar cells were fabricated on 2 ohm-cm, p-type 75 microns thick, silicon substrates. A five photomask level process employing contact photolithography was used to pattern for boron diffusions, phorphorus diffusions, and contact metallization. Fabricated devices demonstrated an open circuit voltage of 3.6 volts and a short circuit current of 90 mA at 80 AMl suns. An equivalent circuit model of the planar multi-junction solar cell was developed.

Valco, G. J.↗
NASA NTRS1986

Improved High/Low Junction Silicon Solar Cell

Method developed to raise value of open-circuit voltage in silicon solar cells by incorporating high/low junction in cell emitter. Power-conversion efficiency of low-resistivity silicon solar cell considerably less than maximum theoretical value mainly because open-circuit voltage is smaller than simple p/n junction theory predicts. With this method, air-mass-zero opencircuit voltage increased from 600 mV level to approximately 650 mV.

Neugroschel, A.↗
NASA NTRS1991

Improvements in contact resistivity and thermal stability of Au-contacted InP solar cells

Specific contact resistivities for as-fabricated Au contacts on n-p InP solar cells are typically in the 10(exp -3) ohm/sq cm range, but contact resistivities in the 10(exp -6) ohm/sq cm range can be obtained if the cells are heat treated at 400 C for a few minutes. This heat treatment, however, results in a dramatic drop in the open circuit voltage of the cell due to excessive dissolution of the emitter into the metallization. It was found that low values of contact resistivity can be secured without the accompanying drop in the open circuit voltage by adding Ga and In in the Au metallization. It is shown that Au contacts containing as little as 1 percent atomic Ga can suppress the reaction that takes place at the metal-InP interface during heat treatment, while exhibiting contact resistivity values in the low 10(exp -5) ohm/sq cm. Detailed explanations for the observed superior thermal stability of these contacts are presented.

Fatemi, Navid S.↗
NASA NTRS1976

Epitaxial silicon solar cells

P+/p/n/n+ epitaxial silicon solar-cell structures were fabricated with the n-base region intentionally graded over 2 orders of magnitude in a thickness of 35 microns. Solar cells made from these layers exhibited near-ideal I-V characteristics in the practical operating range, with an open-circuit voltage of 636 mV, fill factor of 0.79, and AM1 efficiency of 12.6%. A similar epitaxial structure containing no gradient in the n-base showed good solar-cell performance but lower open-circuit voltage (603 mV).

Daiello, R. V.↗