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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Engineering shallow and deep level defects in $\kappa$-Ga 2 O 3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments

Orthorhombic gallium oxide (κ-Ga 2 O 3 ) is an ultra-wide bandgap semiconductor with great potential in new generation electronics. Its application is hindered at present by the limited physical understanding of the relationship between synthesis and functional properties. This work discusses the effects of growth method (metal-organic vapour phase epitaxy and molecular beam epitaxy) as well as annealing treatments in different atmospheres (O 2 , H 2 ) on point defects in κ-Ga 2 O 3 layers epitaxially grown on c-plane sapphire. Comprehensive experimental characterization by X-ray diffraction, photo current-as well as photoluminescence excitation spectroscopy, and X-ray photo electron spectroscopy is combined with first principles calculations of the point defects’ formation and complex-dissociation energies. We demonstrate that for κ-Ga 2 O 3 the concentration of shallow and deep level defects can be sensitively controlled through annealing treatments at temperatures (T = 500 °C) well below the thermal stability threshold of this polymorph. In particular, our results suggest that hydrogen-related defects (e.g., H-interstitials, Ga-vacancies—H complexes) play a key role in this process. While we provide direct exemplary implications of our results for the performances of κ-Ga 2 O 3 based photodetectors, these findings are predicted to impact further application fields of κ-Ga 2 O 3 , such as high electron mobility transistors or memory devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Low-dose high-resolution $\mathrm{TOF}$-$\mathrm{PET}$ using ionization-activated multi-state low-$\mathrm{Z}$ detector media

We propose PET scanners using low atomic number media that undergo a persistent local change of state along the paths of the Compton recoil electrons. Measurement of the individual scattering locations and angles, deposited energies, and recoil electron directions allows using the kinematical constraints of the 2-body Compton scattering process to perform a statistical time-ordering of the scatterings, with a high probability of precisely identifying where the gamma first interacted in the detector. In these cases the Line-of-Response is measured with high resolution, determined by the underlying physics processes and not the detector segmentation. There are multiple such media that act through different mechanisms. As an example in which the change of state is quantum-mechanical through a change in molecular configuration, rather than thermodynamic, as in a bubble chamber, we present simulations of a two-state photoswitchable organic dye, a ‘Switchillator’, that is activated to a fluorescent-capable state by the ionization of the recoil electrons. The activated state is persistent, and can be optically excited multiple times to image individual activated molecules. Energy resolution is provided by counting the activated molecules. Location along the LOR is implemented by large-area time-of-flight MCP-PMT photodetectors with single photon time resolution in the tens of ps and sub-mm spatial resolution. Simulations indicate a large reduction of dose.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

A SiPM-based optical readout system for the EIC dual-radiator RICH

Silicon photomultipliers (SiPM) are candidates selected as the potential photodetector technology for the dual-radiator Ring-Imaging Cherenkov (dRICH) detector at the future Electron-Ion Collider (EIC). SiPM are cheap devices, highly efficient and insensitive to the high magnetic field at the expected location of the sensors in the experiment. Here, on the other hand, SiPM are not radiation tolerant. Despite the integrated radiation level is expected to be moderate it should be tested whether single photon-counting capabilities and the increase in dark count rate can be kept under control to maintain the optimal dRICH detector performance across the years. The current status of the research for the EIC dRICH application and the first results on studies performed on a sample of commercial and prototype SiPM sensors are presented.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Absolute light yield of the EJ-204 plastic scintillator

The absolute light yield of a scintillator, defined as the number of scintillation photons produced per unit energy deposited, is a useful quantity for scintillator development, research, and applications. Yet, literature data on the absolute light yield of organic scintillators are limited. The goal of this work is to assess the suitability of the EJ-204 plastic scintillator from Eljen Technology to serve as a reference standard for measurements of the absolute light yield of organic scintillators. Four EJ-204 samples were examined: two manufactured approximately four months prior and stored in high-purity nitrogen, and two aged approximately eleven years and stored in ambient air. The scintillator response was measured using a large-area avalanche photodiode calibrated using low energy $γ$-ray and X-ray sources. The product of the quantum efficiency of the photodetector and light collection efficiency of the housing was characterized using an experimentally-benchmarked optical photon simulation. The average absolute light yield of the fresh samples, 9100 ± 400 photons per MeV, is lower than the manufacturer-reported value of 10400 photons per MeV. Moreover, the aged samples demonstrated significantly lower light yields, deviating from the manufacturer specification by as much as 26%. These results are consistent with recent work showcasing environmental aging in plastic scintillators and suggest that experimenters should use caution when deploying plastic scintillators in photon counting applications.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Sub-millimeter resolution SiPM-based neutron anger camera

Thermal and cold neutron beamlines require detector systems that have a high neutron efficiency, large active area, and good spatial resolution. One type of detector that has been implemented at beamlines at the Spallation Neutron Source (SNS) is a scintillator-based Anger camera that utilizes photomultiplier tubes (PMTs) as photodetectors. In this work, we present a new Anger camera design that replaces PMTs with silicon photomultipliers (SiPMs). This new design offers better resolution, less distortion, and more compactness than the previous cameras. A camera with active area of ~100 cm 2 was shown to have a spatial resolution better than 0.5 mm. Additionally, the use of SiPMs allows for use in strong magnetic fields, opening the possibility of additional experimental capabilities. In conclusion, prototype has been built that demonstrates vacuum-compatibility, as required for a proposed beamline for the Second Target Station at SNS.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

PICOSEC-Micromegas Detector, an innovative solution for Lepton Time Tagging

The PICOSEC-Micromegas (PICOSEC-MM) detector is a novel gaseous detector designed for precise timing resolution in experimental measurements. It eliminates time jitter from charged particles in ionization gaps by using extreme UV Cherenkov light emitted in a crystal, detected by a Micromegas photodetector with an appropriate photocathode. The first single-channel prototype tested in 150 GeV/c muon beams achieved a timing resolution below 25 ps, a significant improvement compared to standard Micropattern Gaseous Detectors (MPGDs). This work explores the specifications for applying these detectors in monitored neutrino beams for the ENUBET Project. Key aspects include exploring resistive technologies, resilient photocathodes, and scalable electronics. New 7-pad resistive detectors are designed to handle the particle flux. In this paper, two potential scenarios are briefly considered: tagging electromagnetic showers with a timing resolution below 30ps in an electromagnetic calorimeter as well as individual particles (mainly muons) with about 20ps respectively.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

HRPPD photosensors for RICH detectors with a high resolution timing capability

Recently, a new version of DC-coupled High Rate Picosecond Photodetectors (DC-HRPPDs) substantially re-designed for use at the Electron-Ion Collider (EIC) has been developed. A first batch of seven “EIC HRPPDs” was manufactured in early 2024. These HRPPDs are DC-coupled photosensors based on Micro-Channel Plates (MCPs) that have an active area of 104 mm by 104 mm, 32 × 32 direct readout pixel array at a pitch of 3.25 mm, peak quantum efficiency in excess of 30%, exceptionally low dark count rates and timing resolution of 15–20 ps for a single photon detection. As such, these photosensors are very well suited for Ring Imaging CHerenkov (RICH) detectors that can additionally provide high resolution timing capability, especially in a configuration where a detected charged particle passes through the sensor window, which produces a localized flash containing a few dozens of Cherenkov photons in it.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2021

Multiplexable intrinsic Fabry-Pérot interferometers inscribed by femtosecond laser for vibration measurement in high temperature environments

This article reports fabrication technique and demodulation algorithm developments to use multiplexable intrinsic Fabry-Pérot interferometer (IFPI) fiber sensor array for distributed vibration measurements at high temperatures. Using femtosecond laser direct writing scheme, IFPI array were fabricated through laser-induced Type II scattering points in single mode fiber cores. Reflection spectra of IFPI array were demodulated in real-time using modified Bunemen frequency analysis. The demodulation algorithm, which was implemented using a photodetector-array spectrometer, achieves 64-nε dynamic strain resolution at 1-kHz spectral acquisition rate and 2-kHz maximum vibration bandwidth. Performance and stabilities of IFPI sensor array were characterized from room temperatures to 800 °C. The static strain resolution was 0.6 με and the minimum detectable dynamic strain amplitude was 23 nε/√Hz at 800 °C. The multiplex performance was also tested by measuring dynamic strain in time domain through six IFPI sensor array fabricated in one fiber. This paper presents an integrated and low-cost sensing solution to perform distributed vibration measurements in harsh environments.

42 ENGINEERING↗
DOE OSTI2023

Improving the short-wave infrared response of strained GeSn/Ge multiple quantum wells by rapid thermal annealing

In this work, the evolution of structural, optical and optoelectronic properties of coherently strained Ge 0.883 Sn 0.117 /Ge multiple quantum wells (MQWs) grown by molecular beam epitaxy under rapid thermal annealing (RTA) is systematically investigated. The MQW structure remains fully-strained state with RTA at 400 °C or below and disrupts at higher annealing temperatures due to Sn segregation and interdiffusion of Ge and Sn atoms. The GeSn well layers exhibit the strongest absorption in 2.0–2.4 μm after annealing at 400 °C and become transparent above 1.8 μm after RTA at 600 °C or beyond due to serve Sn segregation. Owing to improved crystal quality after RTA at 400 °C, the dark current of the fabricated metal-semiconductor-metal photodetector is effectively lowered by more than two times. Additionally, the responsivities at 1.55 and 2.0 μm are improved by 4.15 and 3.78 folds, respectively, compared to those of the as-grown sample. Here, the results can be an insightful guidance for the development of high-performance short-wave infrared photonic devices based on Sn-containing group-IV low-dimensional structures.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Two Spacers, One Perovskite: Integrating Ruddlesden–Popper and Dion–Jacobson Halide Perovskites

Hybrid organic–inorganic perovskites are a rapidly developing class of materials due to their desirable properties for optoelectronic applications such as their ease of synthesis, solution-processable film formation, tunable band gap, strong photoluminescence, good charge carrier mobilities, and high defect tolerance. Here, we present a novel 2D perovskite motif that seamlessly integrates the structural elements from both Ruddlesden–Popper and Dion–Jacobson halide perovskites. We demonstrate the incorporation of two different organic spacer cations in an ordered manner in 5 novel 2D perovskite iodide materials. Both a cyclic diammonium cation 3-(aminomethyl)piperidinium (3AMP) and a linear alkyl monoammonium cation (Cn = C n H 2n+4 N, n = 4–8) are present in distinct alternating layers, making the new series (Cn) 2 (3AMP)[PbI 4 ] 2 . The crystallization of these materials was optimized through careful temperature control to obtain precise crystal structures via single-crystal X-ray diffraction (XRD) which confirmed the presence of the two cations in distinct layers. The influence of the two spacers on optical properties including the band gaps and photoluminescence spectra are found to more closely resemble (3AMP)PbI 4 than (Cn) 2 PbI 4 , which can be attributed to the amount of distortion imposed by the 3AMP spacer on the lead iodide layers. The findings are supported by density functional theory calculations. The strong photoelectric response of solution-processed thin films shows the potential of these materials in photodetectors or photovoltaics. This unprecedented amalgamation of RP–DJ in (Cn) 2 (3AMP)[PbI 4 ] 2 in a structurally ordered fashion suggests a potential vastly underexplored phase space of 2D perovskites in which there are chemically different spacers in distinct layers of the structure, providing an additional parameter to tune perovskite properties.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Black Phosphorus for Mid-Infrared Optoelectronics: Photophysics, Scalable Processing, and Device Applications

High efficiency mid-infrared (λ = 3-8 μm) light emitters and photodetectors are pivotal for advancing next-generation optoelectronics. However, narrow-bandgap semiconductors face fundamental challenges such as pronounced nonradiative carrier recombination and thermally generated noise, which impede device performance. Recently, two-dimensional layered black phosphorus (BP) and its alloys have attracted substantial interest for mid-infrared device applications, demonstrating superior performance relative to conventional III-V and II-VI semiconductors with similar bandgaps. In this review, we discuss the optical properties of BP, contrasting these with those of covalent compounds. Owing to its inherently self-terminated surface structure and reduced nonradiative recombination, BP exhibits high performance in light emission and photodetection at room temperature. Furthermore, this review highlights recent advances in the large-area processing of BP thin films, paving the way for practical device applications and integration. Finally, we explore ongoing challenges and emerging opportunities in the utilization of BP for functional mid-infrared devices.

Higashitarumizu, Naoki↗
DOE OSTI2025

Bound and Continuum Intersubband Transitions in Colloidal Quantum Wells

Quantum well intersubband transitions are critical for quantum cascade lasers and infrared photodetectors. Control of band offsets allows bound-to-bound intersubband transitions, with confinement of both initial and final states, and bound-to-continuum transitions, in which only the initial state is energetically confined within the potential well. Both types of transitions are also achieved in colloidal CdSe wells by changing the heterostructure shell. Bare wells have narrow intersubband transitions spanning the near-infrared spectrum following effective mass predictions. Atomically precise core/shells enable a readily adjusted potential well for electrons. For CdSe/ZnS, bound-to-bound transitions are narrow and redshift with shell thickness. By contrast, broad bound-to-continuum absorptions are found in CdSe/CdS. Due to small conduction band offsets, higher conduction band states of the well are more delocalized into the CdS shell. In conclusion, these measurements provide unique data to understand the electronic structure of colloidal quantum wells and chart a path to atomically precise optoelectronic materials for the mid-infrared.

colloidal atomic layer deposition↗
DOE OSTI2025

Photoabsorption and Stability in Triple-Cation Perovskites Influenced by Interfacial Engineering of the Collector

Charge carrier dynamics in three-dimensional (3D) perovskites is critical to understand for enhancing device performance since the photoabsorption mechanism in perovskites influences key functional devices such as photodetectors and solar cells. Temperature-dependent optoelectronic transport measurements were conducted on our triple cation formulation for the first time from 4 K to 300 K to investigate the role of an interfacial Ti underlayer, beneath the conventional Au collector electrode. The photocurrent was 10X larger with the use of a Ti interfacial layer compared to only Au, where device measurements were made using a broadband white light source at room temperature. As temperature increased from 4 K, the photocurrent increased in both cases, consistent with the semiconducting nature of the triple-cation absorber. Besides computing the responsivity as a function of power and temperature, time-domain measurements with ON/OFF pulses of incident white light, showed the switching time constants to be in the tens to few hundred milliseconds range, and largely temperature-invariant for the two contacts examined. Finally, we constructed solar cells with the same triple cation absorber, in an n-i-p architecture with a Spiro-OMeTAD hole transport layer, but the collector was composed of both types of contacts. Exposing our devices to moisture-rich conditions of up to 70% relative humidity showed the Au/Ti contacted devices to be more robust. Here, our experimental results demonstrate that the addition of a Ti interlayer improves collector efficiency through the photoabsorption process while also potentially stabilizing the solar cells, compared to the bare Au, in moisture-rich environments

optoelectronics↗
DOE OSTI2021

Orientation-Controlled Large-Area Epitaxial PbI 2 Thin Films with Tunable Optical Properties

Lead iodide (PbI 2 ) as a layered material has emerged as an excellent candidate for optoelectronics in the visible and ultraviolet regime. Micrometer-sized flakes synthesized by mechanical exfoliation from bulk crystals or by physical vapor deposition have shown a plethora of applications from low-threshold lasing at room temperature to high-performance photodetectors with large responsivity and faster response. However, large-area centimeter-sized growth of epitaxial thin films of PbI 2 with well-controlled orientation has been challenging. Additionally, the nature of grain boundaries in epitaxial thin films of PbI 2 remains elusive. Here, we use mica as a model substrate to unravel the growth mechanism of large-area epitaxial PbI 2 thin films. The partial growth leading to uncoalesced domains reveals the existence of inversion domain boundaries in epitaxial PbI 2 thin films on mica. Combining the experimental results with first-principles calculations, we also develop an understanding of the thermodynamic and kinetic factors that govern the growth mechanism, which paves the way for the synthesis of high-quality large-area PbI 2 on other substrates and heterostructures of PbI 2 on single-crystalline graphene. Here, the ability to reproducibly synthesize high-quality large-area thin films with precise control over orientation and tunable optical properties could open up unique and hitherto unavailable opportunities for the use of PbI 2 and its heterostructures in optoelectronics, twistronics, substrate engineering, and strain engineering.

2D materials↗
DOE OSTI2021

Thermal Conductivity of β-Phase Ga 2 O 3 and (Al x Ga 1– x ) 2 O 3 Heteroepitaxial Thin Films

Heteroepitaxy of β-phase gallium oxide (β-Ga 2 O 3 ) thin films on foreign substrates shows promise for the development of next-generation deep ultraviolet solar blind photodetectors and power electronic devices. In this work, the influences of the film thickness and crystallinity on the thermal conductivity of ($\bar{2}01$)-oriented β-Ga 2 O 3 heteroepitaxial thin films were investigated. Unintentionally doped β-Ga 2 O 3 thin films were grown on c-plane sapphire substrates with off-axis angles of 0° and 6° toward $\langle$$11\bar{2}0$$\rangle$ via metal–organic vapor phase epitaxy (MOVPE) and low-pressure chemical vapor deposition. The surface morphology and crystal quality of the β-Ga 2 O 3 thin films were characterized using scanning electron microscopy, X-ray diffraction, and Raman spectroscopy. The thermal conductivities of the β-Ga 2 O 3 films were measured via time-domain thermoreflectance. The interface quality was studied using scanning transmission electron microscopy. The measured thermal conductivities of the submicron-thick β-Ga 2 O 3 thin films were relatively low as compared to the intrinsic bulk value. The measured thin film thermal conductivities were compared with the Debye–Callaway model incorporating phononic parameters derived from first-principles calculations. The comparison suggests that the reduction in the thin film thermal conductivity can be partially attributed to the enhanced phonon-boundary scattering when the film thickness decreases. They were found to be a strong function of not only the layer thickness but also the film quality, resulting from growth on substrates with different offcut angles. Growth of β-Ga 2 O 3 films on 6° offcut sapphire substrates was found to result in higher crystallinity and thermal conductivity than films grown on on-axis c-plane sapphire. However, the β-Ga 2 O 3 films grown on 6° offcut sapphire exhibit a lower thermal boundary conductance at the β-Ga 2 O 3 /sapphire heterointerface. In addition, the thermal conductivity of MOVPE-grown ($\bar{2}01$)-oriented β-(Al x Ga 1–x ) 2 O 3 thin films with Al compositions ranging from 2% to 43% was characterized. Because of phonon-alloy disorder scattering, the β-(Al x Ga 1–x ) 2 O 3 films exhibit lower thermal conductivities (2.8–4.7 W/m∙K) than the β-Ga 2 O 3 thin films. The dominance of the alloy disorder scattering in β-(Al x Ga 1–x ) 2 O 3 is further evidenced by the weak temperature dependence of the thermal conductivity. This work provides fundamental insight into the physical interactions that govern phonon transport within heteroepitaxially grown β-phase Ga 2 O 3 and (Al x Ga 1–x ) 2 O 3 thin films and lays the groundwork for the thermal modeling and design of β-Ga 2 O 3 electronic and optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Colloidal Quantum Dot Photovoltaics: Current Progress and Path to Gigawatt Scale Enabled by Smart Manufacturing

Colloidal quantum dots (QDs) have lately been pursued with intense vigor for optoelectronic applications such as photovoltaics (PV), flexible electronics, displays, mid-infrared photodetectors, lasers, and single-photon emitters. These nanometer-sized semiconducting crystals can be suitably mass-produced and size-tuned via cost-effective solution-based synthetic routes to operate in the quantum size confinement regime, endowing them with a wide array of exotic optical and electronic properties. While the first potential market entry could be in displays and in niche applications such as “internet-of-things”, ultimately, the technology has the potential to influence large-scale terrestrial power generation, because it is amenable to high-throughput synthesis from Earth-abundant materials and large-area solution-based coating techniques and can be air-stable. In this Review, we chronicle the recent advances that have propelled QD PV toward commercialization and highlight potential areas for further progress. We present an account of the material compositions being explored as QDs and their various benefits, major chemical passivation and doping strategies that have been developed to allay QD surface traps, and advanced device designs deployed to maximize charge extraction. We also discuss pathways to >20% efficient QD PV and describe recent advances in high-precision and autonomous synthesis of such materials. With recent demonstrations of scalable synthesis of high-quality QDs, smart manufacturing of QDs and QD solids, and fabrication of stable solar cells under ambient conditions, we suggest that the technology is on the road to achieving maturity and technological relevance and that gigawatt per year distributed panel production sites may be within reach.

14 SOLAR ENERGY↗
DOE OSTI2024

Charge Transfer in 2D Halide Perovskites and 2D/3D Heterostructures

Halide perovskites have emerged as a versatile class of materials, with applications spanning photovoltaics, light-emitting diodes, transistors, and photodetectors. The introduction of semiconducting ligands to form two-dimensional (2D) perovskites on the surface of three-dimensional (3D) perovskites in perovskite solar cells has been shown to enhance the performance and stability. To improve the interface properties between the 3D perovskite layer and charge carrier transport layers, understanding the charge transfer (CT) process in 2D perovskites is crucial. In this Perspective, we address common terminological inaccuracies in energy level descriptions, delineate methods for energy alignment characterization, and present practical instances of CT in 2D perovskite-incorporated solar cells. Furthermore, we emphasize the significance of precise terminology, appropriate measurement techniques, and rational design of 2D ligands to harness the full potential of 2D perovskites in optoelectronic applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Localized Excitons in NbSe 2 -MoSe 2 Heterostructures

Neutral and charged excitons (trions) in atomically thin materials offer important capabilities for photonics, from ultrafast photodetectors to highly efficient light-emitting diodes and lasers. Recent studies of van der Waals (vdW) heterostructures comprised of dissimilar monolayer materials have uncovered a wealth of optical phenomena that are predominantly governed by interlayer interactions. Here, we examine the optical properties in NbSe 2 -MoSe 2 vdW hetero- structures, which provide an important model system to study metal–semiconductor interfaces, a common element in optoelectronics. Through low-temperature photoluminescence (PL) microscopy, we discover a sharp emission feature, L1, that is localized at the NbSe 2 -capped regions of MoSe 2 . L1 is observed at energies below the commonly studied MoSe 2 excitons and trions and exhibits temperature- and power-dependent PL consistent with exciton localization in a confining potential. This PL feature is robust, observed in a variety of samples fabricated with different stacking geometries and cleaning procedures. Using first-principles calculations, we reveal that the confinement potential required for exciton localization naturally arises from the in-plane band bending due to the changes in the electron affinity between pristine MoSe 2 and NbSe 2 -MoSe 2 heterostructure. Here, we discuss the implications of our studies for atomically thin optoelectronics devices with atomically sharp interfaces and tunable electronic structures.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗