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NASA NTRS1987

The origin of rigidly rotating magnetic field patterns on the sun

Using analytical calculations and numerical simulations, it is shown that a meridional component of magnetic-flux transport will offset the shearing effect of differential rotation and give rise to rigidly rotating patterns of large-scale magnetic field. The nonaxisymmetric field attains a striped polarity pattern which rotates rigidly like a barber pole while its individual small-scale flux elements rotate at the differential rate of the latitudes they are crossing. On the sun, the meridional transport is provided by supergranular diffusion possibly assisted by a small poleward flow. New sources of flux retard this process and exclude the rigid rotation from the sunspot belts until well into the declining phase of the sunspot cycle. This mechanism accounts for a number of heretofore unexplained phenomena including the tendency for coronal holes to rotate rigidly during the declining phase of the sunspot cycle.

Sheeley, N. R., Jr.↗

NASA NTRS1987

Diode pumped solid-state laser oscillators for spectroscopic applications

The rapid improvement in diode laser pump sources has led to the recent progress in diode laser pumped solid state lasers. To date, electrical efficiencies of greater than 10 percent were demonstrated. As diode laser costs decrease with increased production volume, diode laser and diode laser array pumped solid state lasers will replace the traditional flashlamp pumped Nd:YAG laser sources. The use of laser diode array pumping of slab geometry lasers will allow efficient, high peak and average power solid state laser sources to be developed. Perhaps the greatest impact of diode laser pumped solid state lasers will be in spectroscopic applications of miniature, monolithic devices. Single-stripe diode-pumped operation of a continuous-wave 946 nm Nd:YAG laser with less than 10 m/w threshold was demonstrated. A slope efficiency of 16 percent near threshold was shown with a projected slope efficiency well above a threshold of 34 percent based on results under Rhodamine 6G dye-laser pumping. Nonlinear crystals for second-harmonic generation of this source were evaluated. The KNbO3 and periodically poled LiNbO3 appear to be the most promising.

Byer, R. L.↗

NASA NTRS1987

The use of airborne imaging spectrometer data to determine experimentally induced variation in coniferous canopy chemistry

It was experimentally determined whether induced differences in forest canopy chemical composition can be detected using data from the Airborne Imaging Spectrometer (AIS). Treatments were applied to an even-aged forest of Douglas fir trees. Work to date has stressed wet chemical analysis of foilage samples and correction of AIS data. Plot treatments were successful in providing a range of foliar N2 concentrations. Much time was spent investigating and correcting problems with the raw AIS data. Initial problems with groups of drop out lines in the AIS data were traced to the tape recorder and the tape drive. Custom adjustment of the tape drive led to recovery of most missing lines. Remaining individual drop out lines were replaced using average of adjacent lines. Application of a notch filter to the Fourier transform of the image in each band satisfactorily removed vertical striping. The aspect ratio was corrected by resampling the image in the line direction using nearest neighbor interpolation.

Swanberg, Nancy A.↗

NASA NTRS1987

Evaluation of AIS-2 (1986) data over hydrothermally altered granitoid rocks of the Singatse Range (Yerington) Nevada and comparison with 1985 AIS-1 data

The Airborne Imaging Spectrometer-2 (AIS-2) flights along 2 subparallel lines (bearing 013) were designed to traverse 3 major rock assemblages - the Triassic sedimentary sequence; the granitoid rocks of the Yerington batholith and the Tertiary ignimbritic ash flow and ash fall tuffs. The first 2 sites are hydrothermally altered to a quartz-sericite-tourmaline mineralogy. The first AIS-2 data set showed numerous line dropouts and a considerable number of randomly distributed dark pixels. A second decommutation reduced the dropout essentially to near zero and the dark pixels by about 75 percent. Vertical striping was removed by histogram matching, column by column. A log residual spectrum was calculated which showed the departure of a 2 x 2 pixel area from the spatially and spectrally averaged scene. A 1:1 correlation was found with the log residual AIS-2 data and a large open pit area of gypsum. An area with known sericite agreed with the overflight data, and an area known to be free of any significant amount of O-H bearing materials showed no evidence of any in the AIS-2 log residuals.

Lyon, R. J. P.↗

NASA NTRS1987

Preliminary results from an investigation of AIS-1 data over an area of epithermal alteration: Plateau, Northern Queensland, Australia

Airborne Imaging Spectrometer-1 (AIS-1) data were flown over undifferentiated sequences of acid to intermediate volcanics and intrusives; meta-sediments; and a series of partially lateritized sedimentary rocks. The area exhibits a considerable spectral variability, after the suppression of striping effects. Log residual, and Internal Average Relative Reflectance (IARR) analytical techniques were used to enhance mineralogically related spectral features. Both methods produce similar results, but did not visually highlight mineral absorption features due to processing artifacts in areas of significant vegetation cover. The enhancement of mineral related absorption features was achieved using a hybrid processing approach based on the relative reflectance differences between vegetated and non-vegetated surfaces at 1.2 and 2.1 micron. The result is an image with little overall contrast, but which enhances the more subtle spectral features believed to be associated with clays and epidote. The AIS data was subject to interactive analysis using SPAM. Clear separation of clay and epidote related absorption features was apparent, and the identification of kaolinite was possible despite detrimental spectral effects.

Mackin, Steve↗

NASA NTRS1988

Development program for 1.93-micron lasers

For the first time lasers operating at 1.93 microns were demonstrated. The lasers were fabricated by Vapor Phase Epitaxial (VPE) growth techniques currently used for the fabrication of high power lasers at 1.3 microns. The structure of these laser diodes consisted of compositionally graded, sulfur-doped InAsP, grown on an InP substrate; a constant-composition n+InAs(0.27)P(0.73) layer, which is the first cladding layer; an In(0.66)Ga(0.34)As layer, which is the active region, and a second InAs(0.27)P(0.73) layer. The devices were oxide-stripe DH lasers (gain-guided only). The best devices had 80 K lasing thresholds in the range of from 80 to 150 mA, and T sub o (below 220 K) in the range of 60 to 90 K. The highest observed temperature of oscillation was 15.5 C. The highest observed power output at 80 K was in the range of 3 to 5 mW. The calculated delta I/delta T was 4.4 A/K. As a part of the materials development, PIN homojunction detectors having the band edge near 1.93 were also fabricated. The best devices (100 micron diameter, mesa structure) exhibited room temperature dark currents in the range of from 20 to 50 nA and had QE at 1.93 microns in the range of 35 to 40 percent. In addition to the device results, the InGaAs-InAsP materials system was extensively investigated and low defect density layers can now be grown allowing for significant device performance improvement.

Longeway, P.↗

NASA NTRS1987

Continuous-wave operation of a room-temperature, diode-laser-pumped, 946-nm Nd:YAG laser

Single-stripe diode-laser-pumped operation of a continuous-wave 946-nm Nd:YAG laser with less than 10-mW threshold has been demonstrated. A slope efficiency of 16 percent near threshold was shown with a projected slope efficiency well above a threshold of 34 percent based on results under Rhodamine 6G dye-laser pumping. Nonlinear crystals for second-harmonic generation of this source were evaluated. KNbO3 and periodically poled LiNbO3 appear to be the most promising.

Fan, T. Y.↗

NASA NTRS1988

Discrimination of hydrothermal alteration mineral assemblages at Virginia City, Nevada, using the airborne imaging spectrometer

The purpose of this study is to use airborne imaging spectrometer data to discriminate hydrothermal alteration mineral assemblages associated with silver and gold mineralization at Virginia City, NV. The data is corrected for vertical striping and sample gradients, and converted to flat-field logarithmic residuals. Log residual spectra from areas known to be altered are compared to field spectra for kaolinitic, illitic, sericitic, and propylitic alteration types. The areal distributions of these alteration types are estimated using a spectral matching technique. Both visual examination of spectra and the matching techniques are effective in distinguishing kaolinitic, illitic, and propylitic alteration types from each other. However, illitic and sericitic alteration cannot be separated using these techniques because the spectra of illite and sericite are very similar. A principal components analysis of 14 channels in the 2.14-2.38 micron wavelength region is also successful in discriminating and mapping illitic, kaolinitic, and propylitic alteration types.

Hutsinpiller, Amy↗

NASA NTRS1988

Ultralow threshold graded-index separate-confinement heterostructure single quantum well (Al, Ga) As lasers

Broad area graded-index separate-confinement heterostructure single quantum well lasers grown by molecular-beam epitaxy (MBE) with threshold current density as low as 93 A/sq cm (520 microns long) have been fabricated. Buried lasers formed from similarly structured MBE material with liquid phase epitaxy regrowth had threshold currents at submilliampere levels when high reflectivity coatings were applied to the end facets. A CW threshold current of 0.55 mA was obtained for a laser with facet reflectivities of about 80 percent, a cavity length of 120 micron, and an active region stripe width of 1 micron. These devices driven directly with logic level signals have switch-on delays less than 50 ps without any current prebias. Such lasers permit fully on-off switching while at the same time obviating the need for bias monitoring and feedback control.

Derry, P. L.↗

NASA NTRS1988

GaAs/GaAlAs distributed Bragg reflector laser with a focused ion beam, low dose dopant implanted grating

The performance of a GaAs/GaAlAs distributed Bragg reflector (DBR) laser using a focused ion beam implanted grating (FIB-DBR) is reported for the first time. Stripes of Si(2+) with a period of 2300 A and a dose about 10 to the 14th/sq cm are directly implanted into the passive large optical cavity layer to provide the distributed feedback. Surface-emitting light from the second-order grating is observed. Threshold current of 110 mA and single DBR mode operation from 20 to 40 C are obtained. The wavelength tuning rate with temperature is 0.8 A/C. The coupling coefficient is estimated to be 15/cm. The results show that FIB technology is practical for distributed feedback and DBR lasers and optoelectronic integrated circuits.

Wu, M. C.↗

NASA NTRS1988

Structural anomalies in undoped Gallium Arsenide observed in high resolution diffraction imaging with monochromatic synchrotron radiation

Novel, streak-like disruption features restricted to the plane of diffraction have recently been observed in images obtained by synchrotron radiation diffraction from undoped, semi-insulating gallium arsenide crystals. These features were identified as ensembles of very thin platelets or interfaces lying in (110) planes, and a structural model consisting of antiphase domain boundaries was proposed. We report here the other principal features observed in high resolution monochromatic synchrotron radiation diffraction images: (quasi) cellular structure; linear, very low-angle subgrain boundaries in (110) directions, and surface stripes in a (110) direction. In addition, we report systematic differences in the acceptance angle for images involving various diffraction vectors. When these observations are considered together, a unifying picture emerges. The presence of ensembles of thin (110) antiphase platelet regions or boundaries is generally consistent not only with the streak-like diffraction features but with the other features reported here as well. For the formation of such regions we propose two mechanisms, operating in parallel, that appear to be consistent with the various defect features observed by a variety of techniques.

Steiner, B.↗

NASA NTRS1989

Monolithic narrow-linewidth InGaAsP semiconductor laser for coherent optical communications

A design for a monolithic narrow-linewidth InGaAsP diode laser has been developed using a multiple-quantum-well (MQW) extended-passive-cavity distributed-Bragg-reflector (DBR) laser design. Theoretical results indicate that this structure has the potential for a linewidth of 100 kHz or less. To realize this device, a number of the fabrication techniques required to integrate low-loss passive waveguides with active regions have been developed using a DBR laser structure. In addition, the MOCVD growth of InGaAs MQW laser structures has been developed, and threshold current densities as low as 1.6 kA/sq cm have been obtained from broad-stripe InGaAs/InGaAsP separate-confinement-heterostructure MQW lasers.

Palfrey, S. L.↗

NASA NTRS1988

Diffraction effects on infrared-system performance

An expression for the incidence detected by an ideal quantum detector is derived using incoherent imaging of square waves with one wavelength or in a wavelength band. The detected incidence contains a correction term that becomes appreciable when the width of the square waves becomes comparable in size to the F-number of the imaging system. The correction term is evaluated for a Lambertian self-radiating body with stripes at two temperatures. The quality of the detected image is shown to depend on the temperatures and the dimensions of the body, the wavelength band of the detection system, and the F-number of the imaging system.

Scholl, Marija S.↗

NASA NTRS1989

DBR laser with nondynamic plasma grating formed by focused ion beam implanted dopants

A static plasma grating has been demonstrated experimentally (Wu et al., 1988) in a large-optical-cavity focused-ion-beam-distributed-Bragg-reflector (FIB-DBR) GaAlAs/GaAs laser diode. The grating is formed by implanting stripes of dopants with a focused ion beam. The dopants ionize to form periodic fluctuations in the carrier concentration which, through the Kramers-Kronig relations, form an index grating. A model of the grating strength for optimizaton of the laser design is developed and presented. The computed results show that the coupling coefficient k can be increased by more than an order of magnitude over the 15/cm experimentally. Therefore, FIB-DBR or FIB-distributed-feedback (DFB) lasers with performance comparable to that of conventional DBR (or DFB) lasers can be expected.

Boenke, Myra M.↗

NASA NTRS1989

Structural anomalies in undoped gallium arsenide observed in high-resolution diffraction imaging with monochromatic synchrotron radiation

Steiner, B.↗

NASA NTRS1989

Phase-front measurements of an injection-locked AlGaAs laser-diode array

The phase-front quality of the primary spatial lobe emitted from an injection-locked gain-guided AlGaAs laser-diode array is measured by using an equal-path, phase-shifting Mach-Zehnder interferometer. Root-mean-square phase errors of 0.037 + or - 0.003 wave are measured for the single spatial lobe, which contained 240-mW cw output power in a single longitudinal mode. This phase-front quality corresponds to a Strehl ratio of S = 0.947, which results in a 0.23-dB power loss from the single lobe's ideal diffraction-limited power. These values are comparable with those measured for single-stripe index-guided AlGaAs lasers.

Cornwell, Donald M., Jr.↗

NASA NTRS1990

Unstable-Resonator Distributed-Bragg-Reflector Laser

Proposed distributed-Bragg-reflector (DBR) semiconductor laser has wide curved gratings favoring single-mode operation, even with relatively wide laser stripe, enabling use of higher power. Consists of semiconductor double heterostructure laser bounded at each end by region of passive waveguide.

Lang, Robert J.↗

NASA NTRS1989

Microwave field effect transistor

Electrodes of a high power, microwave field effect transistor are substantially matched to external input and output networks. The field effect transistor includes a metal ground plane layer, a dielectric layer on the ground plane layer, a gallium arsenide active region on the dielectric layer, and substantially coplanar spaced source, gate, and drain electrodes having active segments covering the active region. The active segment of the gate electrode is located between edges of the active segments of the source and drain electrodes. The gate and drain electrodes include inactive pads remote from the active segments. The pads are connected directly to the input and output networks. The source electrode is connected to the ground plane layer. The space between the electrodes and the geometry of the electrodes extablish parasitic shunt capacitances and series inductances that provide substantial matches between the input network and the gate electrode and between the output network and the drain electrode. Many of the devices are connected in parallel and share a common active region, so that each pair of adjacent devices shares the same source electrodes and each pair of adjacent devices shares the same drain electrodes. The gate electrodes for the parallel devices are formed by a continuous stripe that extends between adjacent devices and is connected at different points to the common gate pad.

Huang, Ho-Chung↗