Search NASA⌕ Search

SEARCH · Search NASA

Results for “switching device”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

The Demonstration of Power over Ethernet (PoE) Technologies in Commercial and Institutional Buildings

PoE technologies are currently ubiquitous in offices in the form of phones, access points, and IP security cameras and managed by on-site IT staff. As low voltage DC-power capabilities have increased with network switches, PoE devices are now being integrated across additional building systems, including lighting, computers, and HVAC controls. Since PoE devices are connected to network switches, energy monitoring and management can be performed through the IT network management software. Data and results from technology validations are still very limited for PoE equipment. This lack of information hinders higher adoption as its benefits and challenges have been insufficiently quantified in real-world scenarios. The use of IT network switches to power and control lighting, plug loads, and HVAC were demonstrated at a variety of sites including offices, schools, and a hotel. This paper presents the findings of a three-year DOE-/State of Minnesota-funded project that demonstrated and assessed the energy and non-energy benefits of Power over Ethernet (PoE) technologies at four commercial/institutional sites. The goals of the demonstrations were to: (1) assess the receptiveness of commercial and institutional markets to these new technologies, (2) demonstrate the feasibility of PoE technologies within standard design/construction practices and commercial codes, (3) assess the energy and cost savings opportunities of these technologies, (4) provide energy management opportunities where they typically are not available, and (5) formulate approaches to spur adoption of these technologies in the marketplace.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
NASA NTRS2019

Modeling of Multi-Loops Related Device Turn-On Overvoltage in 3L-ANPC Converters

The analytical model for the device drain-source turn-on overvoltage in three-level active neutral point clamped (3L-ANPC) converters is established in this paper. Considering the two commutation loops in the converter, the relationship between the overvoltage and the loop inductances is evaluated. The line switching frequency device usually exhibits higher overvoltage, while the high switching frequency device is not strongly influenced by the multiple loops. A 500 kVA 3L-ANPC converter using SiC MOSFETs is tested, and the model is verified with the experimental results.

SiC MOSFET↗
DOE OSTI2023

Illumination frustums for photoconductive switches

Methods and devices for illuminating a photoconductive switch consisting of an optically actuated photoconductive material situated between two electrodes are described. Light from a light source is coupled to an optical fiber, which is attached to a frustum, the other side of which is proximate to the photoconductive switch. Light from the optical fiber enters the frustum, spreads out, and enters the photoconductive switch via the top-side electrode. Some of the light is absorbed, while the remaining light reflects off the bottom-side electrode, travels back through the photoconductive switch, and any unabsorbed light reenters the frustum. The geometry of the frustum is configured such that most of the light reflects back into the switch itself with only a negligible fraction escaping from the optical fiber, which advantageously results in near total utilization of the light.

Rushford, Michael↗
DOE OSTI2020

Reversible plasmonic switching in a graphene nanoresonator loaded with a core – shell quantum dot

A model of an all-plasmonic switch based on a graphene waveguide integrated with a stub nanoresonator loaded with a quantum dot is considered. Using the full-wave numerical simulation, it is shown that successive on/off switching of the control surface plasmon – polariton wave at the input of the waveguide leads to a change in the phase of the signal plasmon – polariton wave in the nanoresonator by π. This causes reversible switching of the device operation regime – from almost complete blocking to stable transmission of the signal plasmon – polariton wave through the waveguide. The effect is implemented at rates of ∼0.5 THz for infrared electromagnetic waves localised in a device with a switching region of 40 × 20 nm. (paper)

36 MATERIALS SCIENCE↗
NASA NTRS2015

Heavy Ion Test Results of the Vishay DG403DY-E3 Analog Switch

This study was undertaken to determine the Single Event Latchup (SEL) susceptibility of the Vishay DG403DY-E3 (Analog Switch). The device was under a biased and switching configuration during irradiation and continuously monitored for destructive events. The parts were tested at the Lawrence Berkeley National Laboratory 88 inch cyclotron facility

Single Event Latchup (SEL)↗
NASA NTRS1982

Deep impurity trapping concepts for power semiconductor devices

High voltage semiconductor switches using deep impurity doped silicon now appear feasible for high voltage (1-100 kV), high power (10 Kw) switching and protection functions for future space power applications. Recent discoveries have demonstrated several practical ways of gating deep impurity doped silicon devices in planar configurations and of electrically controlling their characteristics, leading to a vast array of possible circuit applications. A new family of semiconductor switching devices and transducers are possible based on this technology. New deep impurity devices could be simpler than conventional p-n junction devices and yet use the same basic materials and processing techniques. In addition, multiple functions may be possible on a single device as well as increased ratings.

Sundberg, G. R.↗
DOE OSTI2021

Superconducting Radio Frequency Resonators for Quantum Computing: A Short Review

Superconducting radiofrequency (SRF) technology is being used not only in discovery science programs and basic research but also for several applications that benefit society more directly. The advantage of superconducting resonators over those made of normal-conducting metal is their ability to store electromagnetic energy with much lower dissipation. The high-quality factor and longer dissipation time provided by these superconducting resonators can deliver superior performance. Currently, the quantum processing architecture uses resonators and interconnecting circuits operating in the microwave regime with superconducting strip-line technology and low noise electronic devices for switching and communication. The performance of these devices can be enhanced by embedding them in 3D SRF cavity resonators to prolong the coherence time, which improves the utility of the device by reducing error rates and allowing more manipulations (calculations) before the quantum state decays. Here, we present a short review of current microwave technology used in quantum computers and progress towards the 3D resonators to enhance thecoherence time.

Dhakal, Pashupati↗
DOE OSTI2021

3D superconducting radio-frequency resonators for quantum computing

Superconducting radiofrequency (SRF) technology is being used not only in discovery science programs and basic research but also for several applications that benefit society more directly. The advantage of superconducting resonators over those made of normal-conducting metal is their ability to store electromagnetic energy with much lower dissipation. The high quality factor and longer dissipation time provided by these superconducting resonators can deliver superior performance. Currently, the quantum processing architecture uses resonators and interconnecting circuits operating in the microwave regime with superconducting strip-line technology and low noise electronic devices for switching and communication. The performance of these devices can be enhanced by embedding them in 3D SRF cavity resonators to prolong the coherence time, which improves the utility of the device by reducing error rates and allowing more manipulations (calculations) before the quantum state decays. In this presentation, I will review the current technology and progress towards the three dimensional SRF cavities to enhance the coherence time.

Dhakal, Pashupati↗
NASA NTRS1982

Electrical properties of multi p-n junction devices

The electrical properties of multi p-n junction devices are analyzed. It is found that this type of device possesses bistable characteristics similar to that of a Shockley diode and thus provides an alternative realization of devices for switching applications. The inherently greater current gains involved in the operations of such a device yield in principle higher breakover voltages and higher holding currents. Furthermore, the incorporation of heterostructures in this device introduces a new degree of freedom in tailoring their switching characteristics. Multi p-n heterojunction devices operating as SCR lasers were fabricated, and the experimental results are presented.

Katz, J.↗
DOE OSTI2021

Mapping Conductance and Switching Behavior of Graphene Devices In Situ

Graphene is proposed for use in various nanodevice designs, many of which harness emergent quantum properties for device functionality. However, visualization, measurement, and manipulation become nontrivial at nanometer and atomic scales, representing a significant challenge for device fabrication, characterization, and optimization at length scales where quantum effects emerge. Herein, proof of principle results at the crossroads between 2D nanoelectronic devices, e-beam-induced modulation, and imaging with secondary electron e-beam induced currents (SEEBIC) is presented. A device platform compatible with scanning transmission electron microscopy investigations is introduced. Then how the SEEBIC imaging technique can be used to visualize conductance and connectivity in single layer graphene nanodevices, even while supported on a thicker substrate (conditions under which conventional imaging fails) is shown. Finally, it is shown that the SEEBIC imaging technique can detect subtle differences in charge transport through time in nonohmic graphene nanoconstrictions indicating the potential to reveal dynamic electronic processes.

36 MATERIALS SCIENCE↗
NASA NTRS2007

SiC Multi-Chip Power Modules as Power-System Building Blocks

The term "SiC MCPMs" (wherein "MCPM" signifies "multi-chip power module") denotes electronic power-supply modules containing multiple silicon carbide power devices and silicon-on-insulator (SOI) control integrated-circuit chips. SiC MCPMs are being developed as building blocks of advanced expandable, reconfigurable, fault-tolerant power-supply systems. Exploiting the ability of SiC semiconductor devices to operate at temperatures, breakdown voltages, and current densities significantly greater than those of conventional Si devices, the designs of SiC MCPMs and of systems comprising multiple SiC MCPMs are expected to afford a greater degree of miniaturization through stacking of modules with reduced requirements for heat sinking. Moreover, the higher-temperature capabilities of SiC MCPMs could enable operation in environments hotter than Si-based power systems can withstand. The stacked SiC MCPMs in a given system can be electrically connected in series, parallel, or a series/parallel combination to increase the overall power-handling capability of the system. In addition to power connections, the modules have communication connections. The SOI controllers in the modules communicate with each other as nodes of a decentralized control network, in which no single controller exerts overall command of the system. Control functions effected via the network include synchronization of switching of power devices and rapid reconfiguration of power connections to enable the power system to continue to supply power to a load in the event of failure of one of the modules. In addition to serving as building blocks of reliable power-supply systems, SiC MCPMs could be augmented with external control circuitry to make them perform additional power-handling functions as needed for specific applications: typical functions could include regulating voltages, storing energy, and driving motors. Because identical SiC MCPM building blocks could be utilized in a variety of ways, the cost and difficulty of designing new, highly reliable power systems would be reduced considerably. Several prototype DC-to-DC power-converter modules containing SiC power-switching devices were designed and built to demonstrate the feasibility of the SiC MCPM concept. In anticipation of a future need for operation at high temperature, the circuitry in the modules includes high-temperature inductors and capacitors. These modules were designed to be stacked to construct a system of four modules electrically connected in series and/or parallel. The packaging of the modules is designed to satisfy requirements for series and parallel interconnection among modules, high power density, high thermal efficiency, small size, and light weight. Each module includes four output power connectors two for serial and two for parallel output power connections among the modules. Each module also includes two signal connectors, electrically isolated from the power connectors, that afford four zones for signal interconnections among the SOI controllers. Finally, each module includes two input power connectors, through which it receives power from an in-line power bus. This design feature is included in anticipation of a custom-designed power bus incorporating sockets compatible with snap-on type connectors to enable rapid replacement of failed modules.

Lostetter, Alexander↗
DOE OSTI2022

The Demonstration of Power over Ethernet (PoE) Technologies in Commercial and Institutional Buildings

Power over Ethernet (PoE) technologies are currently ubiquitous in offices in the form of phones, access points, and IP security cameras. They are systems that are familiar to and managed by on-site IT staff. As low voltage DC-power capabilities have increased with the advancement of IT network switches within offices, PoE devices are now being integrated across additional building systems, including lighting, computers, and HVAC controls. The connection of PoE devices to network switches offers the opportunity for energy monitoring and management to be performed through IT network management software. Data and results from technology validations of PoE equipment remain very limited. This lack of information hinders expansion of PoE as an energy management strategy as its benefits and challenges have been insufficiently quantified in real-world scenarios. This final report presents the findings of a DOE/State of Minnesota-funded project that demonstrated and assessed the energy and non-energy benefits of Power over Ethernet (PoE) technologies at six sites: two offices, three schools, and a hotel. The goals of the demonstrations were to: (1) assess the receptiveness of commercial and institutional markets to these new technologies, (2) demonstrate the feasibility of PoE technologies within standard design/construction practices and commercial codes, (3) assess the energy and cost savings opportunities of these technologies, (4) provide energy management opportunities where not typically available, and (5) formulate approaches to spur adoption of these technologies in the marketplace.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2021

Method and system for microwave mixer phase response measurement

A system, method and apparatus for mixer phase response measurement comprises a vector network analyzer connectable to a device under test, an additional device connected to the analyzer the additional device configured to have an equal phase response to that of the device under test, a local oscillator connected to the device under test and the additional device, a series of switches connecting the device under test and the additional device to a vector voltmeter, and a reference generator connected to the vector voltmeter.

Frolov, Daniil↗
NASA NTRS1972

Ferromagnetic-fluid logic devices

Logic element switches flows of low pressure process control fluid in fluidics assemblies. Device operates both electrically and fluidically and is controlled by passing permanent magnet or electromagnet over elements, thus providing proximity switching functions.

Makowski, M. J.↗
NASA NTRS1993

A tri-state optical switch for local area network communications

This novel structure is a heterojunction phototransistor which can be used as an emitter-detector, and when placed in a quiescent mode, the device becomes a passive transmitter. By varying the voltage bias, this novel device will switch between all three modes of operation. Such a device has broad application in network environments with operation speeds of less than 50 MHz and distances of less than 1 km, e.g. automobiles, airplanes, and intra-instrumentation. During this period, the emission mode for this device was studied and mathematically modeled.

Simms, Garfield↗
DOE OSTI2026

Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions

Benefiting from the superior properties of wide-bandgap semiconductor materials, wide-bandgap power devices demonstrate exceptional switching performance, enabling more efficient and compact power electronics systems. However, ultrafast switching poses challenges to the reliability of the system in terms of severe oscillations and voltage overshoot, electromagnetic interference, and increased risk of partial discharge. By developing advanced power module packaging for fast-switching power devices, the above-mentioned challenges can be mitigated at the packaging level, enabling the full utilization of the fast-switching capability of wide-bandgap devices. Meanwhile, such technology also lays the groundwork for packaging next-generation power devices with even higher blocking voltage and faster switching speed. In this paper, a comprehensive review of ultrafast switching power modules has been made, including the benefits and status of ultrafast switching power modules, challenges brought by ultrafast switching, and promising technologies to address these challenges. In addition, future development trends and research gaps are also discussed in this paper. Furthermore, this review can serve as a reference for future wide-bandgap power module packaging design.

24 POWER TRANSMISSION AND DISTRIBUTION↗