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The widest available operational amplifier, with the best voltage and current noise characteristics, is considered for transimpedance amplifier (TIA) applications where wide bandwidth is required to handle fast rising input signals (as for time-of-flight measurement cases). The added amplifier inside the TIA feedback loop can be configured to have slightly lower voltage gain than the bandwidth reduction factor.
A document presents data from tests of a low-noise amplifier module operating in the frequency range from 290 to 340 GHz said to be the highest-frequency low-noise, solid-state amplifier ever developed. The module comprised a three-stage monolithic microwave integrated circuit (MMIC) amplifier integrated with radial probe MMIC/waveguide transitions and contained in a compact waveguide package, all according to the concepts described in the immediately preceding article and in the referenced prior article, "Integrated Radial Probe Transition From MMIC to Waveguide" (NPO-43957), NASA Tech Briefs Vol. 31, No. 5 (May 2007), page 38. The tests included measurements by the Y-factor method, in which noise figures are measured repeatedly with an input noise source alternating between an "on" (hot-load) condition and an "off" (cold-load) condition. (The Y factor is defined as the ratio between the "on" and "off" noise power levels.) The test results showed that, among other things, the module exhibited a minimum noise figure of about 8.7 dB at 325 GHz and that the gain at that frequency under the bias conditions that produced the minimum noise figure was between about 9 and 10 dB.
This paper presents a mathematical model characterizing the behavior of a simple amplifier using a FeFET. The model is based on empirical data and incorporates several variables that affect the output, including frequency, load resistance, and gate-to-source voltage. Since the amplifier is the basis of many circuit configurations, a mathematical model that describes the behavior of a FeFET-based amplifier will help in the integration of FeFETs into many other circuits.
A device has been developed for coherent detection of the polarization of the cosmic microwave background (CMB). A two-stage amplifier has been designed that covers 75-110 GHz. The device uses the emerging 35-nm InP HEMT technology recently developed at Northrop Grumman Corporation primarily for use at higher frequencies. The amplifier has more than 18 dB gain and less than 35 K noise figure across the band. These devices have noise less than 30 K at 100 GHz. The development started with design activities at JPL, as well as characterization of multichip modules using existing InP. Following processing, a test campaign was carried out using single-chip modules at 100 GHz. Successful development of the chips will lead to development of multichip modules, with simultaneous Q and U Stokes parameter detection. This MMIC (monolithic microwave integrated circuit) amplifier takes advantage of performance improvements intended for higher frequencies, but in this innovation are applied at 90 GHz. The large amount of available gain ultimately leads to lower possible noise performance at 90 GHz.
Signal-conditioning amplifier recorders (SCAmpRs) have been proposed as a means of simplifying and upgrading the Kennedy Space Center (KSC) Ground Measurement System (GMS), which is a versatile data-acquisition system that gathers and records a variety of measurement data before and during the launch of a space shuttle. In the present version of the GMS system, signal conditioning amplifiers digitize and transmit data to a VME chassis that multiplexes up to 416 channels. The data is transmitted via a high-speed data bus to a second VME chassis where it is available for snapshots. The data is passed from the second VME chassis to a high-speed data recorder. This process is duplicated for installations at two launch pads and the Vehicle Assembly Building (VAB). Since any failure of equipment in the data path results in loss of data, much of the system is redundant. The architecture of the existing GMS limits expansion or any modification to the system to meet changing requirements because of the cost and time required. A SCAmpR-based system is much more flexible. The basis of the simplification, flexibility, and reliability is the shifting of the recording function to the individual amplifier channels. Each SCAmpR is a self-contained single channel data acquisition system, which in its current implementation, has a data storage capacity of up to 30 minutes when operating at the fastest data sampling rates. The SCAmpR channels are self-configuring and self-calibrating. Multiple SCAmpR channels are ganged on printed circuit boards and mounted in a chassis that provides power, a network hub, and Inter-Range Instrument Group (IRIG) time signals. The SCAmpR channels share nothing except physical mounting on a circuit board. All circuitry is electrically separate for each channel. All that is necessary to complete the data acquisition system is a single master computer tied to the SCAmpR channels by standard network equipment. The size of the data acquisition system dictates the requirements for the specific network equipment.
The study of atmospheric dynamics and climatology depend on accurate and frequent measurements of temperature and humidity profiles of the atmosphere. These measurements furthermore enable highly accurate measurements of ocean topography by providing total column water vapour data for radar path delay correction. The atmospheric temperature profile is characterized at the oxygen molecule absorption frequencies (60 and 118 GHz) and the humidity profile at the water molecule absorption frequencies (23 and 183 GHz). Total column measurements can be achieved by comparing measured radiometric temperatures at atmospheric window channels, such as 90, 130, and 166 GHz. The standard receiver technology for these frequencies was diode mixers with MMIC LNAs being applied at the lower frequencies. The sensitivity of millimeter wave receivers improved significantly with the introduction of the low noise 35 nm gate length InP MMIC amplifiers. We currently achieve 3 dB noise figure at 180 GHz and 2 dB noise figure at 90 GHz with our MMIC low noise amplifiers (LNAs) in room temperature. These amplifiers and the receivers we have built using them made it possible to conduct highly accurate airborne measurements campaigns from the Global Hawk unmanned aerial vehicle, develop millimeter wave internally calibrated radiometers for altimeter radar path delay correction, and build prototypes of large arrays of millimeter receivers for a geostationary interferometric sounder. We use the developed millimeter wave receivers to measure temperature and humidity profiles in the atmosphere and in hurricanes as well as to characterize the path delay error in ocean topography alitmetery.
We demonstrate the first polarization maintaining, very-large-mode-area Er-doped fiber amplifier with ~1000 square micron effective area. The amplifier is core pumped by a Raman fiber laser and is used to generate single frequency one microsecond pulses with pulse energy of 368 microJoules, M2 of 1.1, and polarization extinction greater than 20 dB. The amplifier operates at 1572.3 nm, a wavelength useful for trace atmospheric CO2 detection.
This work presents the design and measured results of a fully integrated switched power two-stage GaN HEMT high-power amplifier (HPA) achieving 60% power-added efficiency at over 120Woutput power. This high-efficiency GaN HEMT HPA is an enabling technology for L-band SweepSAR interferometric instruments that enable frequent repeat intervals and high-resolution imagery. The L-band HPA was designed using space-qualified state-of-the-art GaN HEMT technology. The amplifier exhibits over 34 dB of power gain at 51 dBm of output power across an 80 MHz bandwidth. The HPA is divided into two stages, an 8 W driver stage and 120 W output stage. The amplifier is designed for pulsed operation, with a high-speed DC drain switch operating at the pulsed-repetition interval and settles within 200 ns. In addition to the electrical design, a thermally optimized package was designed, that allows for direct thermal radiation to maintain low-junction temperatures for the GaN parts maximizing long-term reliability. Lastly, real radar waveforms are characterized and analysis of amplitude and phase stability over temperature demonstrate ultra-stable operation over temperature using integrated bias compensation circuitry allowing less than 0.2 dB amplitude variation and 2 deg phase variation over a 70 C range.
The paper presents the architecture of a wideband reconfigurable harmonically-tuned Gallium Nitride (GaN) Solid State Power Amplifier (SSPA) for cognitive radios. When interfaced with the physical layer of a cognitive communication system, this amplifier topology offers broadband high efficiency through the use of multiple tuned input/output matching networks. This feature enables the cognitive radio to reconfigure the operating frequency without sacrificing efficiency. This paper additionally presents as a proof-of-concept the design, fabrication, and test results for a GaN inverse Class-F type amplifier operating at X-band (8.4 GHz) that achieves a maximum output power of 5.14-W, Power Added Efficiency (PAE) of 38.6 percent, and Drain Efficiency (DE) of 48.9 percent under continuous wave (CW) operation.
In this work, we describe monolithic millimeter-wave integrated circuit (MMIC) Low Noise Amplifier (LNA) and mixer designs for U-Band, also known as the WR19 waveguide band (40-60 GHz). The LNAs were fabricated in NGC’s 35 nm InP HEMT MMIC process. The MMICs were packaged in WR19 waveguide housings and tested for noise, both at room temperature and cryogenically. We present the results, including a comparison to the state-of-the-art, and discuss applications for amplifiers in this frequency range. To date, these are the first cryogenic 35 nm InP MMIC results covering the 40-60 GHz range. We achieved a noise temperature less than 30 K over the 40-60 GHz range, when the amplifiers were cryogenically cooled. These results are comparable with other results in the literature, and we believe are the lowest reported for MMICs in the 50-60 GHz range.
The purpose of this testing was to characterize Analog Devices’ AD8065 FastFET amplifier for low-dose rate (LDR) total ionizing dose (TID) response based on the Lucy project requirements and will be used on the L’ORRI instrument being built by Johns Hopkins University Applied Physics Lab. The AD8065 is a voltage feedback amplifier with FET inputs developed with the proprietary eXtra Fast Complementary Bipolar (XFCB) process. The amplifier boasts low noise operation and very high input impedance with a wide supply voltage range.
In this paper, we present the architecture of a Ka-band switched, wideband, high efficiency gallium nitride based high-power amplifier. The architecture is validated by characterizing the driver and power amplifier chain. The measured results include Pout, Gain, PAE, RMS EVM for QPSK, Offset-QPSK, 8PSK, 16APSK, and 16QAM constellations, 3rd order IMD products, noise figure, and added phase noise. The wide bandwidth and high output power of the amplifier will enable future user terminals to interoperate between multiple service provider’s space networks.
Low-noise detectors are a key technology for the next generation of astronomical instruments aimed at spectroscopy of faint objects and the search for exoplanets. In this context, the multiple-amplifier sensing charge-coupled device (MAS-CCD) emerges as a promising technology for future scientific instruments. A critical parameter affecting the performance of these devices is spurious charge, produced by the clocking of the gates. Its measurement is typically challenging with existing methods. In practice, the optimization of this parameter often relies on empirical procedures that require significant time and careful consideration of the trade-off with full-well capacity. In this work, we present a new technique to estimate spurious charge based on covariance analysis of the output amplifiers of the MAS-CCD, which measures the same charge packet in different amplifiers at different times. The method enables fast and precise measurements of spurious charge under operating conditions where conventional approaches are difficult to apply. We develop the theoretical framework of the method and validate the model through simulations. The results demonstrate the feasibility of this approach and suggest that it could serve as a basis for reliable large-scale characterization of sensor performance.
Direct current torque amplifier for driving gyro-stabilized platform - amplifier design
Constant amplifier gain achieved by maintaining quiescent collector current constant with changes in amplifier load or transistor beta
We report a single stage tunded amplifier that exhibits 7 dB small signal gain at 176 GHz. Common Base topology is chosen as it has the best maximum stable gain (MSG) in this frequency band when compared to common emitter and common collector topologies. The amplifiers are designed and fabricated in InP mesa double heterojunction bipolar transistor (DHBT) technology.
As part of the LANSCE Accelerator Modernization Pro ject (LAMP), critical portions of the proposed accelerator will be tested as proof of concept and aid in planning the installation of LAMP at Los Alamos Neutron Science Cen ter. As part of this demonstration, the radio frequency quadrupole (RFQ) and the first drift-tube linac (DTL) cav ity will be tested with beam. For this purpose, high-power RF amplifiers are being designed to meet the testing de mands. This is a description of the requirements of these amplifiers and how the design is intended to meet them.
Two-frequency operation of an 850 nm semiconductor optical amplifier was achieved by simultaneously injection seeding it with two diode lasers. The two frequencies could be independently amplified without strong interference when they were separated by more than 10 GHz, and the spectral purity was preserved by the amplification process. At frequency differences below 10 GHz, unbalanced two-frequency output was observed, which can be explained by a two-mode interaction driven by the refractive index modulation at the beat frequency. The laser system is suitable for the difference-frequency generation of coherent terahertz radiation in ultra-fast photoconductors or nonlinear optical media.