3D/2D passivation as a secret to success for polycrystalline thin-film solar cells
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First Principles Predictions of SnO2/CdTe and SnO2/CdCl2/CdTe Interface Structures
Interfaces become increasingly the limiting factor of solar cell efficiency, raising the interest in computational models. However, explicit atomic structure models from microscopy are rare, and hypothetical assumptions about the atomic structure become ambiguous for incoherent or highly lattice mismatched interfaces. Adopting a bulk crystal structure prediction algorithm to interfacial systems enables explicit structure models for the bare and CdCl 2 treated SnO 2 /CdTe interface.
CdTe↗
Semiconductor electrolyte photovoltaic energy converter
Feasibility and practicality of a solar cell consisting of a semiconductor surface in contact with an electrolyte are evaluated. Basic components and processes are detailed for photovoltaic energy conversion at the surface of an n-type semiconductor in contact with an electrolyte which is oxidizing to conduction band electrons. Characteristics of single crystal CdS, GaAs, CdSe, CdTe and thin film CdS in contact with aqueous and methanol based electrolytes are studied and open circuit voltages are measured from Mott-Schottky plots and open circuit photo voltages. Quantum efficiencies for short circuit photo currents of a CdS crystal and a 20 micrometer film are shown together with electrical and photovoltaic properties. Highest photon irradiances are observed with the GaAs cell.
Anderson, W. W.↗
Potential of thin-film solar cell module technology
During the past five years, thin-film cell technology has made remarkable progress as a potential alternative to crystalline silicon cell technology. The efficiency of a single-junction thin-film cell, which is the most promising for use in flat-plate modules, is now in the range of 11 percent with 1-sq cm cells consisting of amorphous silicon, CuInSe2 or CdTe materials. Cell efficiencies higher than 18 percent, suitable for 15 percent-efficient flat plate modules, would require a multijunction configuration such as the CdTe/CuInSe2 and tandem amorphous-silicon (a-Si) alloy cells. Assessments are presented of the technology status of thin-film-cell module research and the potential of achieving the higher efficiencies required for large-scale penetration into the photovoltaic (PV) energy market.
Shimada, K.↗
Nanometer-Scale Imaging of Inhomogeneous Active Charge Carriers in Arsenic-Doped CdTe Thin Films
We report nanometer-scale imaging of active carrier distribution of As-doped CdTe films by scanning capacitance microscopy (SCM). We developed SCM sample preparation for CdTe by ion-milling followed by thermal processing. The nanometer-resolution carrier delineation for CdTe was validated by imaging on a CdTe cross-section sample made by a molecular beam epitaxy layer stack with As-doping concentrations of 10^15 ~10^18 /cm 3 . We found that the carrier distribution in As-doped films was significantly nonuniform, with inhomogeneity ranging from sub-um to a few um and concentration variation of one order of magnitude (low 10^16 to low 10^17 /cm 3 ). This nonuniformity is distributed randomly, independent of grain structure and grain boundary (GB). We used Kelvin probe force microscopy (KPFM) and cathodoluminescence (CL) to further map the surface potential and radiative illumination on the same area as the SCM image. Higher potential and lower CL intensity were found on GBs but not on SCM contrast, illustrating positive GB charging and GB recombination but not GB-distinguished doping. The overall KPFM potential image is in rough agreement with the SCM carrier distribution, in terms of Fermi-level position relative to the bandgap edge - thus resulting in the band-edge potential fluctuation. Nonuniform carrier concentration, potential fluctuation, and defect recombination can all together cause the Voc deficit of the As-doped CdTe device.
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Development of an operando characterization stage for multi-modal synchrotron x-ray experiments
It is widely accepted that micro- and nanoscale inhomogeneities govern the performance of many thin-film solar cell absorbers. These inhomogeneities yield material properties (e.g., composition, structure, and charge collection) that are challenging to correlate across length scales and measurement modalities. The challenge is compounded if a correlation is sought during device operation or in conditions that mimic aging under particular stressors (e.g., heat and electrical bias). Correlative approaches, particularly those based on synchrotron x-ray sources, are powerful since they can access several material properties in different modes (e.g., fluorescence, diffraction, and absorption) with minimal sample preparation. Small-scale laboratory x-ray instruments have begun to offer multi-modality but are typically limited by low x-ray photon flux, low spatial resolution, or specific sample sizes. To overcome these limitations, a characterization stage was developed to enable multi-scale, multi-modal operando measurements of industrially relevant photovoltaic devices. The stage offers compatibility across synchrotron x-ray facilities, enabling correlation between nanoscale x-ray fluorescence microscopy, microscale x-ray diffraction microscopy, and x-ray beam induced current microscopy, among others. Furthermore, the stage can accommodate device sizes up to 25 × 25 mm 2 , offering access to multiple regions of interest and increasing the statistical significance of correlated properties. The stage materials can sustain humid and non-oxidizing atmospheres, and temperature ranges encountered by photovoltaic devices in operational environments (e.g., from 25 to 100 °C). As a case study, we discuss the functionality of the stage by studying Se-alloyed CdTe photovoltaic devices aged in the stage between 25 and 100 °C.
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Field Effect in CdSeTe/CdTe Solar Cells with Biased Spectroscopy
Steady-state and time-resolved photoluminescence measurements were performed under external electrical bias on thin polycrystalline CdSeTe/CdTe solar cells. The results indicate that internal field effects which can go unnoticed during traditional, unbiased spectroscopy measurements may be more consequential than generally realized. In addition, probing the field behavior with bias may allow investigation of defect states and the determination of transport characteristics, such as mobility.
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Modeling of the effectiveness of novel edge seal designs for fast, low‐Cap‐Ex manufacturing
Abstract In the manufacturing of photovoltaic (PV) modules, the lamination process can take up to 20 min to complete. In this work, new lamination processes are being developed, and have been prototyped, which hope to be able to cut this time down to as little as 30 s. This could provide significant savings in the cost of lamination equipment, floor space, and energy. PV modules are expected to have a lifespan exceeding 20 to 30 years. For moisture‐sensitive PV technologies, the edge seal between the two layers of glass can be the weakest point of its reliability. There is an inherent challenge when evaluating edge seal materials due to their low permeation rates. As part of Colorado State University's Photovoltaic Research and Development 2, work at the National Renewable Energy Laboratory has developed models to evaluate edge seal configurations in glass‐glass PV modules. Here, this new manufacturing process is evaluated for long‐term moisture durability. Different edge seal design options within glass–glass PV modules are explored. Most of these designs are targeting a superstrate on glass configuration, e.g CdTe, but some designs could be used on conventional crystalline Si cells. Using COMSOL finite element simulation software, we investigated the edge seal and interlayer design configurations containing silicone perimeter edge adhesive, desiccated polyisobutylene‐based edge seal, air, and polyolefin while integrating climate conditions equivalent to a hot and humid environment such as Miami, Florida. We found optimized configurations that will allow the module to prevent moisture ingress over 50 years minimizing the amount of time and material used while utilizing polymers that are easily dispensed.
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Upstream Extraction of Tellurium from Copper Concentrates
A major barrier to increasing CdTe PV module production is the availability of tellurium (Te), an element necessary to manufacture CdTe PV cells that currently has a very limited supply. Most Te is obtained from ore extracted for copper mining, but the current processing methods only extract 3-4% of the available Te in this ore, with the rest being discarded during other processing steps. This project aims to increase Te supply by developing an innovative extraction method that will recover more Te from the copper ore earlier in the process. This method will also extract toxic elements like antimony and arsenic, making the copper mining process more environmentally friendly.
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Analysis of CdTe photovoltaic cells for ambient light energy harvesting
This paper investigates the suitability of CdTe photovoltaic cells to be used as power sources for wireless sensors located in buildings. We fabricate and test a CdTe photovoltaic cell with a transparent conducting oxide front contact that provides for high photocurrents and low series resistance at low light intensities and measures the photovoltaic response of this cell across five orders of magnitude of AM1.5G light intensity. Efficiencies of 10% and 17.1% are measured under ~1 W m -2 AM1.5G and LED irradiance respectively, the highest values for a CdTe device under ambient lighting measured to date. We use our results to assess the potential of CdTe for internet of things devices from an optoelectronic, as well as a techno-economic perspective, considering its established manufacturing know-how, potential for low-cost, proven long-term stability and issues around the use of cadmium.
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Understanding What Limits the Voltage of Polycrystalline CdSeTe Solar Cells
The origin of voltage deficits in polycrystalline cadmium selenide telluride (CdSeTe) solar cells is unclear. Here, we present a comprehensive voltage loss analysis performed on state-of-the-art CdSeTe devices - fabricated at Colorado State University and First Solar - using photoluminescence techniques, including external radiative efficiency (ERE) measurements. More specifically, we report the thermodynamic voltage limit Voc,ideal, internal voltage iVoc and external voltage Voc of partially and fully finished cells fabricated with different dopant species, dopant concentrations and back contacts. Arsenic-doped aluminium-oxide-passivated cells made at Colorado State University present remarkably high ERE (>1%) - translating into iVoc above 970 mV - but suffer from poor back-contact selectivity. On the other hand, arsenic-doped devices from First Solar present almost perfect carrier selectivity (Voc=iVoc), leading to Voc above 840 mV, and are limited by recombination in various parts of the device. Thus, development of contact structures that are both passivating and selective in combination with highly luminescent absorbers is key to reducing voltage losses.
CdSeTe devices↗
Group-V Dopant Incorporation for High CdSeTe/CdTe Hole Density and Lifetime
CdTe-based photovoltaic device performance can be improved by increasing both hole density and carrier lifetime simultaneously. In this work, we discuss sources and thin film processes to achieve incorporation and high hole density in conjunction with lifetime using group-V dopants.
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Task 12 PV Sustainability - Life Cycle Inventories and Life Cycle Assessments of Photovoltaic Systems
Life Cycle Assessment (LCA) is a structured, comprehensive method of quantifying material- and energy-flows and their associated impacts in the life cycles of products (i.e., goods and services). One of the major goals of IEA PVPS Task 12 is to provide guidance on assuring consistency, balance, transparency and quality of LCA to enhance the credibility and reliability of the results. The current report presents the latest consensus life cycle inventories among the authors, PV LCA experts in North America, Europe, Asia and Australia. At this time consensus is limited to four technologies for which there are well-established and up-to-date life cycle inventory (LCI) data (mono- and multi-crystalline Si, CdTe, CIGS, as well as one emerging technology (perovskite silicon tandem). LCIs are necessary for LCA and the availability of such data is often the greatest barrier for conducting LCA. The Task 12 LCA experts have put great efforts in gathering and compiling the LCI data presented in this report. These include detailed inputs and outputs during manufacturing of cell, wafer, module, and balance-of-system (i.e., structural and electrical components) that were estimated from actual production and operation facilities. In addition, data are presented to enable analyses of various types of PV installations; these include operational data of rooftop and ground-mount PV systems and country-specific PV-mixes. The LCI datasets presented in this report are the latest that are available to the public describing the status in 2018 for crystalline Si (some manufacturing data from 2011 were not updated), 2015 and 2017-2018 for CdTe, 2010 for CIGS, 2010 for HCPV, and 2017 for perovskite silicon tandem technology.
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Selection of optimal wavelengths for optical soiling modelling and detection in photovoltaic modules
Soiling impacts the photovoltaic (PV) module performance by decreasing the amount of light reaching the photovoltaic cells and by changing their external spectral response. Currently, the soiling monitoring market is moving toward optical sensors that measure transmittance or reflectance, rather than directly measuring the impact of soiling on the performance of photovoltaic modules. These sensors, which use a single optical measurement, are not able to correct the soiling losses that depend on the solar irradiance spectra and on the spectral response of the monitored PV material. This work investigates methods that can improve the optical detection of soiling by extracting the full soiling spectrum profiles using only two or three monochromatic measurements. Spectral transmittance data, measured with a spectrophotometer and collected during a 46-week experimental soiling study carried out in Jaén, Spain, was analysed in this work. The use of a spectral profile for the hemispherical transmittance of soiled PV glass is found to significantly improve the soiling detection, returning the lowest errors independently of the PV materials and irradiance conditions. In addition, this work shows that it is also possible to select the measurement wavelengths to minimize the soiling loss detection error depending on the monitored PV semiconductor material (silicon, CdTe, a-Si, CIGS and a representative perovskite). The approaches discussed in this work are also found to be more robust to potential measurement errors compared to single wavelength measurement techniques.
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Voltage Loss Comparison in CdSe/CdTe Solar Cells and Polycrystalline CdSeTe Heterostructures
Cd(Se)Te solar cells have considerable headroom to increase voltage. Voltage losses occur due to incomplete absorption above bandgap E_g and band tail absorption below E_g; such losses are quantified using radiative voltage. The largest voltage losses are attributed to nonradiative recombination, which is quantified via carrier lifetime and radiative efficiency. We compare radiative voltage, radiative efficiency, and carrier lifetime for Cu-doped CdSe/CdTe solar cells and for undoped polycrystalline CdSeTe heterostructures passivated with Al_2O_3. Using external quantum efficiency spectrum and a CdSeTe absorption spectrum obtained from absolute photoluminescence (PL), we show that the radiative voltage is greater than 1.1 V. Time-resolved PL experiments and modeling show that a major part of voltage losses can be attributed to recombination in the absorber bulk. The front interface recombination makes a larger impact within the first few nanoseconds after pulsed excitation, and the comparison of time-gated and time-integrated PL can be used to assess relative contributions of front interface and bulk recombination rates.
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Hands-On PV Experience (HOPE) Workshop, Final Technical Report FY22-FY24
The Hands-On Photovoltaics Experience, or HOPE, is a one-week school held at NLR each summer to educate graduate student photovoltaic researchers in the fundamentals of photovoltaics (PV) as well as specific cell technologies and measurement & characterization techniques. The program brings students from universities across the U.S. and their faculty advisors to spend a week in an in-depth, intensive program, including hands-on lab experiences in solar cell fabrication and testing. This program is intended to educate the students and increase collaboration among the students, their advising faculty, and staff at NLR. Our survey results consistently indicate high satisfaction with this program and good student outcomes post-HOPE. HOPE is a selective program with a competitive application process and is limited to 12-20 students each year. Keeping the program small enables a high level of interaction among the students and individualized attention from the faculty and staff.
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Low-Temperature Gold Deposition Improves CdTe Back Contacts
Improved back contacts can benefit CdTe photovoltaics (PV). In this work, Cd(Se,Te) PV absorbers are cooled during Au evaporation to thermally quench a chemical reaction occurring between gold and CdTe and the generation of a reaction product that lowers device efficiency. Reducing substrate temperature enhances PV power conversion efficiency via open-circuit voltage and fill factor increases. X-ray photoelectron spectroscopy (XPS) reveals that lower temperature also reduces chemical perturbations of the CdTe, potentially linking back contact formation to a CdTe degradation product that hinders PV performance. Comparing reaction enthalpy and substrate heating energy shows that back contact formation by sputtering elemental metals onto ZnTe may exhibit a degradation pathway analogous to that of CdTe/Au reported here. Degradation-diminishing contact formation processes are therefore of general interest for optoelectronic devices, and the reduced substrate temperature in this study is one example.
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Data for "Gold-Induced Chemical Perturbations in CdTe-Based Photovoltaic Cells"
Back contacting p-type CdTe has been identified as one of the major areas of loss in CdTe photovoltaic (PV) power conversion efficiency (PCE). In research settings, Au is a common contact material due to its ease of use and decent performance. This work provides a detailed investigation into using gold for back contacting As-doped, CdCl2 treated, polycrystalline CdTe that has been exposed to air after absorber processing, another routine practice. First, X-ray photoemission spectroscopy (XPS) is used to determine the native oxide to be 1.6 nm of CdTeO3 using a combination of angle-resolved XPS and the cadmium modified Auger parameter. During gold metallization of CdTe, oxygen and oxidized tellurium are eliminated from the thin CdTeO3 native oxide. The fate of the released oxygen and possibly cadmium and tellurium are not known, but these reaction byproducts can enter the absorber bulk or grain boundaries, stay at the interface, or dissolve in the Au. Interfacial hole barriers between CdTe and Au are measured for samples with and without the native oxide present prior to metallization. Results show that the thin CdTeO3 alleviates the downward band bending by 40 meV from 470 meV to 430 meV even though it is consumed during interface formation. The implications of these chemical reactions on the device are assessed through photoluminescence (PL) spectroscopy which shows losses in internal open circuit voltage (iVoc) from 820 meV to 795 meV, carrier lifetime from 123 ns to 45 ns, and PL quantum yield from 2.9x10-5 to 1.2x10-5. Modeling time-resolved PL lifetimes demonstrates the back surface recombination velocity due to metallization reduces minority carrier lifetimes. These results identify the native oxide and show that it plays an important role in mediating downward band bending along with how the back interface reaction can negatively impact device-scale parameters and reduce PV PCE.
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