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Growth and evaluation of gallium arsenide-indium arsenide-aluminum foil structures in construction of thin film large area solar cells for satellites
The concept of a solar-cell array for a solar power satellite is developed to permit evaluation of its economic feasibility for generating power for delivery to public utilities on earth. Gallium arsenide solar cells were considered but it could not be assured that the world gallium resources could support constructions of two solar power satellites per year. Therefore, for preliminary design an array blanket made from 5 by 10 cm silicon solar cells, 50 microns thick, and electrostatically bonded between borosilicate glass sheets was adopted. In annealing experiments, a radiated 50 microns thick cell was restored to its initial performance in a 500 C. Solar-cell efficiency effects significantly the solar power satellite mass, which varies from 90,000 metric tons for 20 percent cells to 120,000 metric tons for 12 percent cells. The anticipated cost of delivered power, based on 1977 dollars, varies from 4 cents per kWh with 18 percent cells, to 5 cents per kWh for 12 percent efficient cells.
In 1989, Boeing announced the fabrication of a tandem gallium concentrator solar cell with an energy conversion efficiency of 30 percent. This research breakthrough has now led to panels which are significantly smaller, lighter, more radiation resistant, and potentially less expensive than the traditional silicon flat plate electric power supply. The new Boeing tandem concentrator (BTC) module uses an array of lightweight silicone Fresnel lenses mounted on the front side of a light weight aluminum honeycomb structure to focus sunlight onto small area solar cells mounted on a thin back plane. This module design is shown schematically. The tandem solar cell in this new module consists of a gallium arsenide light sensitive cell with a 24 percent energy conversion efficiency stacked on top of a gallium antimonide infrared sensitive cell with a conversion efficiency of 6 percent. This gives a total efficiency 30 percent for the cell-stack. The lens optical efficiency is typically 85 percent. Discounting for efficiency losses associated with lens packing, cell wiring, and cell operating temperature still allows for a module efficiency of 22 percent which leads to a module power density of 300 Watts/sq. m. This performance provides more than twice the power density available from a single crystal silicon flat plate module and at least four times the power density available from amorphous silicon modules. The fact that the lenses are only 0.010 ft. thick and the aluminum foil back plane is only 0.003 ft. thick leads to a very lightweight module. Although the cells are an easy to handle thickness of 0.020 ft., the fact that they are small, occupying one-twenty-fifth of the module area, means that they add little to the module weight. After summing all the module weights and given the high module power, we find that we are able to fabricate BTC modules with specific power of 100 watts/kg.
This chapter covers the epitaxy of complex oxides on common inorganic semiconductors. The chapter opens with an introduction, motivating the subject and highlighting key general challenges (Section 6.1). We then proceed to describe the general steps of the growth procedure in Section 6.2, which concludes with an overall discussion about trade-offs and expectation management, with an emphasis on the oxide–semiconductor interface. From there, the text describes oxide growth on the common semiconductors, starting with silicon (Section 6.3), where surface reactions and oxidation are the most challenging aspects. Oxide epitaxy on germanium is described in Section 6.4, which is a less challenging oxide growth scheme on semiconductors. Section 6.5 describes oxide epitaxy on gallium arsenide, one of the more challenging schemes, where interface stability and surface preparation pose key challenges. Finally, in Section 6.6, oxide epitaxy on gallium nitride is described, where the lattice mismatch takes the stage as the key challenge. Altogether, this chapter aims to provide the reader with the practical knowledge, tactics and strategies for oxide epitaxy on semiconductors.
Indium phosphide solar cells have a higher resistance to electron irradiation than Si or GaAs cells of comparable junction depth. As a result, there is much interest in the use of this material for space applications. Cells of this material were made in bulk InP by a number of techniques, including ion implantation, direct diffusion in sealed ampoules, and by open tube diffusion. However, it is generally considered that the epitaxial approach will be superior to all of these techniques. The epitaxy of InP is considerably more difficult than that of gallium arsenide, for a number of reasons. Perhaps the most important is the fact that the native oxides of Indium are extremely difficult to remove, as compared to that of Gallium. In addition, thermal treatments for the desorption of these oxides often result in the formation of phosphorus vacancies and free indium on the surface. Thus, inadequate sample preparation before epitaxy, poor reactor cleaning procedures, or poor transition procedures between the growth of successive layers, all give rise to trap phenomena and to high interface recombination velocities. Moreover, the lifetime of the grown material is dominated by the occurrence of native defects, so that it is a strong function of growth parameters. These problems are of special interest to the fabrication of solar cells, where long life-time, combined with the absence of traps, is highly desirable. A study of this problem is described using a non-invasive diagnostic technique which was developed.
A novel photovoltaic concentrator system is currently being developed. Phase I of the program, completed in late 1986, produced a conceptual design for the concentrator system, including an array weight and performance estimates based on optical, electrical, and thermal analyses. Phase II of the program, just underway, concerns the fabrication and testing of prototype concentrator panels of the design. The concentrator system uses dome Fresnel lenses for optical concentration; gallium arsenide concentrator cells for power generation; prismatic cell covers to eliminate gridline obscuration losses; a backplane radiator for heat rejection; and a honeycomb structure for the deployable panel assembly. The conceptual design of the system, its anticipated performance, and its estimated weight are reported.
This study demonstrates the potential of sonic lift-off (SLO) technology for repeatable substrate reuse in gallium arsenide (GaAs)–based photovoltaics (PVs), offering a pathway toward cost effective production for terrestrial PV applications. Single-junction GaAs solar cells fabricated on acoustically spalled substrates achieved performance metrics comparable with those grown on standard commercial substrates, exhibiting short-circuit current densities (J sc ) of approximately 26.2–26.4 mA/cm 2 , open-circuit voltages (V oc ) around 1001 mV, fill factors (FFs) of 84%, and AM1.5G efficiencies near 22%. These results confirm that one reuse cycle can be realized without a performance penalty, offering a direct pathway to reducing substrate cost in fabrication. Furthermore, subsequent reuse of the substrates highlighted critical challenges, as devices fabricated from reused substrates showed significant degradation in performance (J sc of 15.5 mA/cm 2 , V oc of 748 mV, FF of 72%, and efficiency of 8%), primarily due to degradation of the epitaxial structure resulting from repeated spalling cycles.
Ion irradiation of semiconductors has emerged as a promising approach for fabricating self-organized nanosystems with high atomic precision, despite often being accompanied by undesirable phenomena. Exploring the mechanisms underlying structural transformations is crucial for assessing nanostructure array types under complex irradiation environments. By quantitatively calculating the thermodynamically driven processes and analyzing the impact of intrinsic structural parameters, distinct structural transformations in response to intense electronic excitation are systematically investigated in gallium antimonide (GaSb) and gallium arsenide (GaAs) systems. In high-energy regimes, the nanofibers layer of GaSb exhibits intriguing structural discrepancy, characterized by partial nanofibers with coherent boundaries, interspersed nanopores accompanied by antisite defects and Ga precipitates, distinguishing to a series of discontinuous latent tracks that emerged within cylindrical trajectories in GaAs. Furthermore, significant diffusion behaviors of the nanohillocks are discovered in GaAs, with higher average roughness than GaSb, driven by the gradient stress distribution influenced by the free-surface effects. The deposition energy for melting phase formation, Gibbs free energy, and Ga diffusion coefficients contribute to the distinctive structural features, evidencing relatively stable morphological configurations and higher irradiation resistance in GaAs. Consequently, special optoelectronic properties associated with structural discrepancies facilitate the design and optimization of material functionalities by irradiation technologies.
We present a finite-element drift-diffusion-Poisson model in the Multiphysics Object-Oriented Simulation Environment (MOOSE) framework to compare the radiation response of silicon (Si) and gallium arsenide (GaAs) PIN diodes under high-energy photon irradiation. The model solves coupled carrier continuity and Poisson’s equations with Shockley-Read-Hall recombination, and is verified against standard analytical J-V behavior. Using a simplified 1D geometry with ideal Ohmic contacts, we quantify device response under forward and reverse bias with a 100 MeV photon flux. Under forward bias, Si exhibits markedly greater radiation sensitivity than GaAs, including larger increases in current density, stronger local field and carrier-product perturbations, and higher recombination. Under reverse bias, GaAs shows larger radiation-induced photocurrent and broader current-density peaks near junctions, indicating an advantage for photodetection. Integrated steady-state recombination is consistently higher in Si across voltages. Under periodic photon pulses, GaAs produces higher-amplitude photoresponse and settles more rapidly than Si. These results highlight material-dependent trade-offs for radiation-tolerant, high-speed optoelectronics and provide guidance for selecting PIN architectures in aerospace, nuclear, and high-energy physics environments.
Understanding phonon and charge propagation in superconducting devices plays an important role in both performing low-threshold dark matter searches and limiting correlated errors in superconducting qubits. The Geant4 Condensed Matter Physics (G4CMP) package, originally developed for the Cryogenic Dark Matter Search (CDMS) experiment, models charge and phonon transport within silicon and germanium detectors and has been validated by experimental measurements of phonon caustics, mean charge-carrier drift velocities, and heat pulse propagation times. Here, in this work, we present a concise framework for expanding the capabilities for phonon transport to a number of other novel substrate materials of interest to the dark matter and quantum computing communities, including sapphire (Al 2 O 3 ), gallium arsenide (GaAs), lithium fluoride (LiF), calcium tungstate (CaWO 4 ), and calcium fluoride (CaF 2 ). We demonstrate the use of this framework in generating phonon transport properties of these materials and compare these properties with experimentally-determined values where available.
Electronic structure calculations in the time domain provide a deeper understanding of nonequilibrium dynamics in materials. The real-time Boltzmann equation (rt-BTE), used in conjunction with accurate interactions computed from first principles, has enabled reliable predictions of coupled electron and lattice dynamics. However, the timescales and system sizes accessible with this approach are still limited, with two main challenges being the different timescales of electron and phonon interactions and the cost of computing collision integrals. As a result, only a few examples of these calculations exist, mainly for two-dimensional (2D) materials. Here we leverage adaptive and multirate time integration methods to achieve a major step forward in solving the coupled rt-BTEs for electrons and phonons. Relative to conventional (non-adaptive) time-stepping, our approach achieves a 10x speedup for a target accuracy, or greater accuracy by 3–6 orders of magnitude for the same computational cost, enabling efficient calculations in both 2D and bulk materials. This efficiency is showcased by computing the coupled electron and lattice dynamics in graphene up to ~100 ps, as well as modeling ultrafast lattice dynamics and thermal diffuse scattering maps in bulk materials (silicon and gallium arsenide). In addition to improved efficiency, our adaptive method can resolve the characteristic rates of different physical processes, thus naturally bridging different timescales. This enables simulations of longer timescales and provides a framework for modeling multiscale dynamics of coupled degrees of freedom in matter. Our work opens new opportunities for quantitative studies of nonequilibrium physics in materials, including driven lattice dynamics with phonons coupled to electrons, spin, and other degrees of freedom.
Epitaxially strained germanium-on-silicon (Ge-on-Si) heterostructures are central to next-generation photonic and electronic devices, yet their performance remains strongly constrained by defect-limited carrier lifetimes. In this work, we investigate the impact of defects on the carrier lifetime in relaxed Ge-on-Si and strained Ge-on-Si heterostructures. High-resolution X-ray diffraction quantifies the strain-state in Ge and reveals signatures of strain relaxation due to lattice mismatch. Cross-sectional and plan-view transmission electron microscopy analyses enable direct visualization of interfacial defects and quantification of threading dislocation densities (TDDs) within the Ge layer. However, the presence of a dense misfit dislocation network obscures the threading dislocation signatures, preventing reliable TDD determination by plan-view transmission electron microscopy in strained-Ge (..epsilon..-Ge). To assess the defect density in this case, etch-pit density measurements were performed, providing an alternative means of quantifying the TDDs in the ..epsilon..-Ge layer. Carrier lifetime measurements by microwave-reflection photoconductive decay reveal a clear relationship with TDDs ranging from 5 x 103 cm-2 to 2 x 1010 cm-2, confirming Shockley-Read-Hall recombination as the limiting mechanism at lower defect densities, with TDD-dominated recombination at higher defect densities. The Ge-on-Si relaxed heterostructure exhibited lifetimes much lower (~12 ns) than the lattice-matched Ge on gallium arsenide (GaAs) (~158 ns) heterostructure. Introducing controlled tensile strain reduces defect formation, suppresses strain-relaxation pathways, and leads to measurable improvements in minority carrier lifetime from 12 ns to 171 ns. These results establish a direct relation between defect suppression and carrier recombination dynamics in both relaxed Ge-on-Si grown directly on Si and strained Ge-on-Si heterostructures incorporating compound-semiconductor buffer layers, offering a materials-driven pathway for engineering Ge with improved carrier lifetime for photonic applications.
The second-order optical susceptibility of semiconductors $\chi^{(2)}_{ijk}(-2\omega;\omega,\omega)$ finds application in metrology, spectroscopy, telecommunications, material characterization, and quantum information. Pioneering calculations of $\chi^{(2)}_{ijk}(-2\omega;\omega,\omega)$ utilized non-orthogonal Gaussian orbitals centered at atoms. That formulation transitioned into plane-wave-based algorithms as time went by. As of late, nevertheless, multiple tools for calculating optical susceptibilities have recast the problem using Wannier (i.e. localized) orbitals, making a comeback onto frameworks based on localized basis sets. Here, in this work, we present an approach for calculating $\chi^{(2)}_{ijk}(-2\omega;\omega,\omega)$ reliant on numerical pseudo-atomic orbitals (PAOs) within perturbation theory in the velocity gauge. Its salient feature is a calculation of ‘Slater–Koster-like’ two-center integrals of the momentum operator in between PAOs identified by symmetry. The approach was successfully tested on paradigmatic cubic silicon carbide (3C-SiC) and gallium arsenide, for which linear responses are contributed as well.
We present a performance modeling and degradation analysis framework for tandem photovoltaic modules, building upon established procedures for crystalline silicon devices and adapting them to account for the spectral sensitivity of multijunction technologies. The methodology employs filter criteria to select outdoor measurements close to standard test conditions (STC) under stable spectral and ambient conditions, followed by normalization of power production data with corrections for temperature, irradiance, and precipitable water vapor. We demonstrate this framework using a mechanically stacked four-terminal gallium arsenide (GaAs) // silicon (Si) tandem solar minimodule deployed outdoors from October 2019 to January 2021 in Golden, Colorado, USA. We determined degradation rates of −4.1 ±0.2%/year for the GaAs subcell and −2.5 ±0.9%/year for the Si subcell, with analysis of individual performance metrics indicating that packaging degradation, particularly delamination, was the dominant failure mode. Simulations using PVcircuit, an open-source equivalent-circuit solver, confirmed these findings. The presented methodology provides a reproducible foundation for performance modeling and degradation analysis of emerging tandem technologies.
Fluorescence-mode X-ray absorption spectroscopy (XAS) at high photon energies requires detectors with high stopping power and excellent energy resolution to measure weak element-specific signals. Traditional silicon-based detectors suffer from poor efficiency above ∼20 keV, while most high-Z materials such as cadmium telluride, cadmium zinc telluride, and gallium arsenide have focused predominantly on imaging applications with limited spectroscopic resolution. In contrast, germanium combines excellent stopping power with superior intrinsic energy resolution due to its low Fano factor and favorable charge transport properties, making it ideal for high-resolution spectroscopy in the 15 keV to 100 keV range. To address these requirements, we report on the development, fabrication, and performance evaluation of Gepta-EX, a compact multi-channel high-purity germanium (HPGe) detector system for fluorescence-mode XAS. The Gepta-EX system features a monolithic seven-channel HPGe pixel array integrated with low-noise CUBE charge-sensitive preamplifiers, housed within a thermally isolated compact cryostat operating near 90 K. The detector achieves energy resolutions of 218 eV at 5.9 keV (from a 55 Fe source) and 373 eV at 59.5 keV (from a 241 Am source), with uniform performance across all channels. By avoiding the escape peak interference commonly associated with silicon detectors and providing stable, high-resolution performance, Gepta-EX represents a powerful tool for high-energy X-ray spectroscopy.
High material costs, especially for substrates, have limited the widespread adoption of III-V photovoltaics. A potential to reduce this cost is to reuse the III-V substrate via acoustic spalling, however this technique can leave a rough surface, hindering subsequent device performance. This research investigates the potential of using metalorganic vapor-phase epitaxy growth as a buffer layer to smooth the surface of acoustically spalled germanium and gallium arsenide (GaAs) substrates for improved III-V photovoltaic cell yield and performance, while retaining the maximum number of reuses of a substrate. Three potential smoothing layers were explored: lightly doped C:GaAs, highly doped Se:GaInP, and lightly doped Se:GaInP. C:GaAs showed the most promise as a smoothing layer, while Se:GaInP tended to conform to the underlying morphology, potentially increasing roughness in some areas. Utilizing 5 ..mu..m of C:GaAs as a planarizing buffer increased the average efficiency (without an antireflection coating) from an as-spalled baseline from 2.1% to 4.9% and performing a 5-min 30 degrees C 8:1:1 H2SO4:H2O2:H2O etch prior to a 5 ..mu..m of C:GaAs as a planarizing buffer further increased efficiency to 11.1%.
Colloidal quantum dots, with their size-tunable optoelectronic properties and scalable synthesis, enable applications in which inexpensive high-performance semiconductors are needed. Synthesis science breakthroughs have been key to the realization of quantum dot technologies, but important group III-group V semiconductors, including colloidal gallium arsenide (GaAs), still cannot be synthesized with existing approaches. The high-temperature molten salt colloidal synthesis introduced in this work enables the preparation of previously intractable colloidal materials. We directly nucleated and grew colloidal quantum dots in molten inorganic salts by harnessing molten salt redox chemistry and using surfactant additives for nanocrystal shape control. Synthesis temperatures above 425°C are critical for realizing photoluminescent GaAs quantum dots, which emphasizes the importance of high temperatures enabled by molten salt solvents. We generalize the methodology and demonstrate nearly a dozen III-V solid-solution nanocrystal compositions that have not been previously reported.
The McKinsey and Pyle groups have taken on the responsibility to complete a number of critical tasks necessary for the successful completion of the TESSERACT project planning phase. In particular: 1) Transition Edge Sensor testing, characterization, and electromagnetic noise mitigation; 2) Design and testing of the athermal phonon detectors along with vibrational noise characterization and mitigation; 3) Testing and characterization of prototype detectors using silica, sapphire, gallium arsenide, and superfluid helium as detector materials. This grant supported efforts of graduate student Roger Romani toward these goals.