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Rigid polyurethane foam encapsulation of high- voltage aerospace electronic systems, noting vacuum effect
In this work, we use the Brillouin flow analytic framework to examine the physics of Magnetically Insulated Transmission Lines (MITL). Here, we derive a model applicable to any particle species, including both positive and negative ions, in planar and cylindrical configurations. We then show how to self-consistently solve for two-species simultaneously, using magnetically insulated electrons and positive ions as an example. We require both layers to be spatially separated and magnetically insulated (mutually magnetically insulated); for a 7.5 cm gap with a 2 MV bias voltage, this condition requires magnetic fields in excess of 2.73 T. We see a close match between mutually insulated MITL performance and “superinsulated” (high degree of magnetic insulation) electron-only theory, as may be expected for these high magnetic fields. However, the presence of ions leads to several novel effects: (1) Opposite to electron-only theory, total electron currents increase rather than decrease as the degree of magnetic insulation becomes stronger. The common assumption of neglecting electrons for superinsulated MITL operation must be revisited when ions are present—we calculate up to 20× current enhancement. (2) The electron flow layer thickness increases up to double, due to ion space-charge enhancement. (3) The contributions from both ions and electrons to the MITL flow impedance are calculated. The flow impedance drops by over 50% when ions fill the gap, which can cause significant reflections at the load if not anticipated and degrade performance. Additional effects and results from the inclusion of the ion layer are discussed.
We report gate voltage tunable ultra-thin high-T c cuprates supply a unique platform to investigate the electronic phase diagram and superconductor-insulator transition. One of the challenges in this field is the precise determination of the doping content in the underdoped non-superconducting region. Here we report the discovery of a universal relation between the doping content p and the normal-state resistance at a fixed temperature R(T f ), p = α + β ln[1/R(T f )], in the ultra-thin Bi 2 Sr 2 CaCu 2 O 8+x flakes. The in-depth analysis shows that the evolution of carrier scattering probability with doping content and the change of effective mass caused by superconductor-insulator transition are two key factors leading to this logarithmic relation. Based on our finding, the more precise electronic phase diagram can be established. In addition, the superconductor-insulator transition is verified to be a quantum phase transition using a finite size scaling analysis. The scaling exponent z v is found to have a close correlation with the disorder levels. The present result provides an important foundation to investigate the fascinating electronic states in the ultra-thin cuprates.
An improved mathematical model has been developed of the time dependence of buildup or decay of electric charge in a high-resistivity (nominally insulating) material. The model is intended primarily for use in extracting the DC electrical resistivity of such a material from voltage -vs.- current measurements performed repeatedly on a sample of the material over a time comparable to the longest characteristic times (typically of the order of months) that govern the evolution of relevant properties of the material. This model is an alternative to a prior simplistic macroscopic model that yields results differing from the results of the time-dependent measurements by two to three orders of magnitude.
Single event upset effects from heavy ions are measured for Motorola and IBM silicon-on-insulator (SOI) microprocessors with different feature sizes, and core voltages. The results are compared with results for similar devices with build substrates. The cross sections of the SOI processors are lower than their bulk counterparts, but the threshold is about the same, even though the charge collections depth is more than an order of magnitude smaller in the SOI devices. The scaling of the cross section with reduction of feature size and core voltage dependence for SOI microprocessors discussed.
The main obstacle to the implementation of a high-voltage solar array in space is arcing on the conductor-dielectric junctions exposed to the surrounding plasma. One obvious solution to this problem would be the installation of fully encapsulated solar arrays which were not having exposed conductors at all. However, there are many technological difficulties that must be overcome before the employment of fully encapsulated arrays will turn into reality. An alternative solution to raise arc threshold by modifications of conventionally designed solar arrays looks more appealing, at least in the nearest future. A comprehensive study of arc inception mechanism suggests that such modifications can be done in the following directions: 1) To insulate conductor-dielectric junction from a plasma environment (wrapthrough interconnects); 2) To change a coverglass geometry (overhang); 3) To increase a coverglass thickness; 4) To outgas areas of conductor-dielectric junctions. The operation of high-voltage array in LEO produces also the parasitic current power drain on the electrical system. Moreover, the current collected from space plasma by solar arrays determines the spacecraft floating potential that is very important for the design of spacecraft and its scientific apparatus. In order to verify the validity of suggested modifications and to measure current collection five different solar array samples have been tested in a large vacuum chamber. Each sample (36 silicon based cells) consists of three strings containing 12 cells connected in series. Thus, arc rate and current collection can be measured on every string independently, or on a whole sample when strings are connected in parallel. The heater installed in the chamber provides the possibility to test samples under temperature as high as 80 C that stimulates the LEO operational temperature. The experimental setup is described below.
Trisphere spark gap and high voltage relay provides a positive, fast response, high current capacity device that will sense an overvoltage condition and remove power from the circuit before insulation breakdown. When an overvoltage occurs, the spark gap breaks down and conducts an actuating current to the relay which removes power from the circuit.
Results on CuInSe2/ZnSe thin-film heterojunction photovoltaic devices are presented. By the use of reactive magnetron cosputtering of Zn and In dopant in Ar/H2Se, ZnSe thin films have been deposited on glass and conducting SnO2-coated glass substrates with resistivity as low as 20 ohm-cm at deposition temperatures as low as 120 C. Preliminary ZnSe depositions onto CuInSe2 films supplied by industrial laboratories are encouraging. Reactive-sputter-deposition parameters for ZnSe have yet to be optimized for CuInSe2 substrates; however, open-circuit voltages as high as 430 mV were obtained. The highest short-circuit current density, as determined by spectral response weighted for AM1.5 global insulation, was 37.4 mA/sq cm. In all cases, a highly conductive ZnO film was overcoated onto the ZnSe to reduce the overall sheet resistance.
The main obstacle to the implementation of a high-voltage solar array in space is arcing on the conductor-dielectric junctions exposed to the surrounding plasma. One obvious solution to this problem would be the installation of fully encapsulated solar arrays which were not having exposed conductors at all. However, there are many technological difficulties that must be overcome before the employment of fully encapsulated arrays will turn into reality. An alternative solution to raise arc threshold by modifications of conventionally designed solar arrays looks more appealing, at least in the nearest future. A comprehensive study of arc inception mechanism [1-4] suggests that such modifications can be done in the following directions: i) to insulate conductor-dielectric junction from a plasma environment (wrapthrough interconnects); ii) to change a coverglass geometry (overhang); iii) to increase a coverglass thickness; iiii) to outgas areas of conductor-dielectric junctions. The operation of high-voltage array in LEO produces also the parasitic current power drain on the electrical system. Moreover, the current collected from space plasma by solar arrays determines the spacecraft floating potential that is very important for the design of spacecraft and its scientific apparatus. In order to verify the validity of suggested modifications and to measure current collection five different solar array samples have been tested in large vacuum chamber. Each sample (36 silicon based cells) consists of three strings containing 12 cells connected in series. Thus, arc rate and current collection can be measured on every string independently, or on a whole sample when strings are connected in parallel. The heater installed in the chamber provides the possibility to test samples under temperature as high as 80 C that simulates the LEO operational temperature. The experimental setup is described below.
NASA’s goal for a sustained human presence on the Moon and a future Lunar economy requires the development of novel power transmission materials for extreme environments. As an increasing number of public and private entities set their sights towards a future on the Moon, the demand for surface power will dramatically increase – potentially up to megawatt levels. A Lunar economy is envisioned to include a human habitat, manned and unmanned science exploration assets, excavation rovers and systems, and large-scale infrastructure construction such as solar arrays and power grids. A NASA trade study estimated that 1 to 3 km of power transmission lines (1 to 3 KV ac and dc) will be needed over time. Current high power and voltage SOA cables/wire can easily exceed 1 kg/m where mass is not as critical. Connectors, deployment spools and robots further increase the subsystem mass significantly increasing costs. On the other hand, advances in aeronautics provides path towards space missions. The operating environment on the Moon presents substantial risk to safe and reliable power transmission due to space weathering and degradation. These challenges include cosmic and UV radiation, extreme temperatures swings, the electrostatic Lunar exosphere, and the electrostatic and abrasive lunar regolith. The critical need for lightweight, safe and reliable power cables/wires materials is evident. In this presentation, the extreme high altitude and lunar environments and recent materials development from NASA Glenn Research Center’s High Voltage Materials team towards meeting NASA’s objectives and goals for aeronautics and space missions.
On the first mission of the Tethered Satellite System (TSS-1), a 1.8 m diameter spherical satellite will be deployed a distance of 20 km above the Space Shuttle Orbiter on an insulated conducting tether. The satellite will be held at electric potentials up to 5000 volts positive with respect to the ambient plasma. Due to the passage of the conducting tether through the Earth's magnetic field, an electromagnetic field (EMF) will be created, driving electrons down the tether to the Orbiter, out through an electron gun into the ionosphere and back into the positive-biased satellite. The main problem addressed here is the current-voltage characteristics of the ionospheric interaction with the satellite. The first problem is that while the satellite will be capable of measuring charged particle flow to the surface at several locations, the detectors have a limited range of acceptance angle. The second problem is that the angle of incidence of the incoming electrons will have to be relative to the local normal. This will be important in order to predict the magnitude of the detectable current at each detector location so the detector gain can be pre-set to the correct range. The plasma sheath was analyzed mathematically, and subroutines were written to solve relevant finite element, Taylor-Vlasov, and Poisson equations.
On the first mission of the Tethered Satellite System (TSS-1), a 1.8 m diameter spherical satellite will be deployed a distance of 20 km above the space shuttle Orbiter on an insulated conducting tether. The satellite will be held at electric potentials up to 5000 volts positive with respect to the ambient plasma. Due to the passage of the conducting tether through the Earth's magnetic field, an emf will be created, driving electrons down the tether to the orbiter, out through an electron gun into the ionosphere and back into the positive biased satellite. Instrumentation on the satellite will measure electron flow to the surface at several locations, but these detectors have a limited range of acceptance angle. The problem addressed herein is the determination of the electron current distribution over the satellite surface and the angle of incidence of the incoming electrons relative to the surface normal.
Low-energy-electron-induced single-event upsets are observed in a 22 nm fully-depleted silicon-on-insulator process at nominal and higher supply voltages. Electron dose enhancement was also observed.
A series of active piezoelectric diaphragms were fabricated and patterned with several geometrically defined Inter-Circulating Electrodes "ICE" and Interdigitated Ring Electrodes "ICE". When a voltage potential is applied to the electrodes, the result is a radially distributed electric field that mechanically strains the piezoceramic along the Z-axis (perpendicular to the applied electric field). Unlike other piezoelectric bender actuators, these Radial Field Diaphragms (RFDs) strain concentrically yet afford high displacements (several times that of the equivalent Unimorph) while maintaining a constant circumference. One of the more intriguing aspects is that the radial strain field reverses itself along the radius of the RFD while the tangential strain remains relatively constant. The result is a Z-deflection that has a conical profile. This paper covers the fabrication and characterization of the 5 cm. (2 in.) diaphragms as a function of poling field strength, ceramic thickness, electrode type and line spacing, as well as the surface topography, the resulting strain field and displacement as a function of applied voltage at low frequencies. The unique features of these RFDs include the ability to be clamped about their perimeter with little or no change in displacement, the environmentally insulated packaging, and a highly repeatable fabrication process that uses commodity materials.
High voltage solar arrays provide spacecraft power while optimizing mass and power efficiency. Operating such arrays in the space plasma environment can result in anomalously large currents being collected through insulation defects. Two thicknesses of the insulating material were tested, with no effect found due to insulator thickness. In these tests the polyimide thickness was always much less than the pinhole diameter. The pinhole area was varied over an area range of more than 30:1. It was found that the current collected was independent of the pinhole area for hole diameters from 0.35 to 2.0 mm. Two types of adhesives were tried in two different configurations. The adhesives were chosen for their extreme difference in vacuum qualifications. Neither adhesive types nor configuration made a significant difference in current collection. The temperature of the insulating material was also varied. It was found that current collection decreased with increasing temperature. Tests were conducted to see if pinhole current collection decreased with time, as was indicated by the effects of several short tests. Current was collected for over four hours while the conductor potential was held constant at 1000 volts. A smooth decrease with time was not observed, but rather a roughly constant current collection with brief surges to high values. Tests were also conducted with the simulated solar cell biased negative. The current was found to be proportional to pinhole area.
Solar cells in space plasma conditions are known to arc into the plasma when the interconnects are at a negative potential of a few hundred volts, relative to plasma potential. For cells with silver-coated interconnects, a threshold voltage for arcing exists at about -230 V, as found in both ground and LEO experiments. The arc rate beyond the threshold voltage depends nearly linearly on plasma density, but has a strong power-law dependence on voltage, such that for small increments in operating voltage there is a large increment in arc rate. The arcs generate broadband radio interference and visible light. In ground tests, interconnects have been damaged by arcs in cells having insufficient isolation from a source of high current. Models for the arcs are highly dependent on the choice of interconnect conductor material exposed to the plasma and possibly on the geometry and choice of adjacent insulator material. Finally, new technology solar cells use copper for the cell interconnects, a material which may have a lower arcing threshold voltage than silver. It is expected, from ground tests of simulated solar cells, that any junction of conductor and insulator exposed to space plasma conditions will arc into the plasma at a few hundred volts negative potential, relative to the local plasma.
in this work, we report the fabrication of hexagonal-boron-nitride (hBN) encapsulated multiterminal WSe 2 Hall bars with 2D/2D low-temperature Ohmic contacts as a platform for investigating the two-dimensional (2D) metal-insulator transition. We demonstrate that the WSe 2 devices exhibit Ohmic behavior down to 0.25 K and at low enough excitation voltages to avoid current-heating effects. Additionally, the high-quality hBN-encapsulated WSe 2 devices in ideal Hall-bar geometry enable us to accurately determine the carrier density. Measurements of the temperature (T) and density (n s ) dependence of the conductivity σ(T, n s ) demonstrate scaling behavior consistent with a metalinsulator quantum phase transition driven by electron-electron interactions, but where disorder-induced local magnetic moments are also present. Our findings pave the way for further studies of the fundamental quantum mechanical properties of 2D transition metal dichalcogenides using the same contact engineering.
Nonvolatile resistive switching is one of the key phenomena for emerging applications in optoelectronics and neuromorphic computing. In most of the cases, an electric field is applied to a two terminal dielectric material device and leads to the formation of a low resistance filament due to ion migration. However, the stochastic nature of the ion migration can be an impediment for the device robustness and controllability, with uncontrolled variations of high and low resistance states or threshold voltages. Here, we report an optically induced resistive switching based on a CdS/V 3 O 5 heterostructure which can overcome this issue. V 3 O 5 is known to have a second order insulator to metal transition around T c ≈ 415 K, with an electrically induced threshold switching at room temperature. Upon illumination, the direct transfer of the photoinduced carriers from the CdS into V 3 O 5 produces a nonvolatile resistive switching at room temperature. The initial high resistance can be recovered by reaching the high temperature metallic phase, i.e., temperatures above T c . Interestingly, this resistive switching becomes volatile around the T c . In conclusion, by locally manipulating the volatile and nonvolatile resistive switching using electric field and light, this system is a promising platform for hardware based neuromorphic computing implementations.