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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Instrumentation testing for TREAT experiments in order to test sensors and measurement devices prior to TREAT irradiation to ensure proper collection of data.
The ability to model semiconductor device degradation under neutron irradiation depends upon having a robust modeling capability for the neutron-induced collision cascades as well as a means to analytically fit the resulting probability distributions of defect production and ionizing energy deposition for purposes of extrapolation to low-probability, high-consequence scenarios. In this paper, the widely-utilized binary collision approximation codes MARLOWE and SRIM are deployed in conjunction with a critical examination of their parameterizations as benchmarked against higher-fidelity molecular dynamics simulations. A simple 3-parameter form described by the Generalized Logistic Distribution is shown to be a good fit to Frenkel pair and ionization intensity distributions in bulk silicon. The BCA codes are then applied to simulate cascades in 5 nm layers of a representative gate-all-around nanosheet transistor, where joint probability distributions of threshold levels of damage to multiple layers are evaluated.
Radiation induced changes in semiconductor materials from 40 MeV proton radiation determined by improved infrared method
JPL's X2000 avionics design pioneers new territory by specifying a non-volatile memory (NVM) board based on flash memories. The Samsung 128Mb device chosen was found to demonstrate bit errors (mostly program disturbs) and block-erase failures that increase with cycling. Low temperature, certain pseudo- random patterns, and, probably, higher bias increase the observable bit errors. An experiment was conducted to determine the wearout dependence of the bit errors to 100k cycles at cold temperature using flight-lot devices (some pre-irradiated). The results show an exponential growth rate, a wide part-to-part variation, and some annealing behavior.
A 1 GeV/u 5 6Fe ion beam allows for true 90deg tilt irradiations of various microelectronic c-0mponents and reveals relevant upset trends at the GCR Hux energy peak. Three SRAMs and an SRAM-based FPGA evaluated at the NASA Space Radiation Effects Laboratory demonstrate that a 90deg tilt irradiation yields a unique device response. These tilt angle effects need t-0 be screened for, and if found, pursued with radiation transport simulations to quantify their impact on event rate calculations.
This paper has examined the effects of proton damage on two types of LEDs in the wavelength region above the silicon bandgap limit. Unlike AlGaAs LEDs, the optical power linearity in both types of devices changes significantly after irradiation. This may be caused by the lower heterojunction barriers associated with these materials.
This report is a follow-up to the previous report on the difference between high fluence, high and low flux irradiations. There was a discrepancy in the data for the LBNL irradiated S5821 PIN diodes. There were diodes irradiated in the two batches (high and low flux) with the same flux and fluence for reference (lell ions/cm 2 /shot and 5, 10, and 20 ions/cm 2 total flux). Although these diodes should have the same electrical characteristics their leakage currents were different by a factor of 5-6 (batch 2 was larger). Also, the C-V measurements showed drastically different results. It was speculated that these discrepancies were due to one of the following two reasons: 1. Different times elapsed between radiation and characterization. 2. Different areas were irradiated (roughly half of the diodes were covered during irradiation). To address the first concern, we annealed the devices according to the ASTM standard [1]. The differences remained the same. To determine the irradiated area, we performed large area IBIC scans on several devices. Error! Reference source not found. below shows the IBIC maps of two devices one from each batch. The irradiated areas are approximately the same.
The effects of 1 MeV electron irradiation upon the performance of two phase, polysilicon aluminum gate CCDs are reported. Both n- and p-surface channel and n-buried channel devices are investigated using 64- and 128-stage line arrays. Characteristics measured as a function of radiation dose include: Transfer inefficiency, threshold voltage, field effect mobility, interface state density, full well signal level and dark current. Surface channel devices are found to degrade considerably at less than 10 to the 5th power rads (Si) due to the large increase in fast interface state density caused by radiation. Buried channel devices maintain efficient operation to the highest dose levels used.
Here, we studied the effect of light ion and heavy ion irradiations on pnp Si BJTs. A mismatch in DLTS deep peak amplitude for devices with same final gain but irradiated with different ion species was observed. Also, different ions cause different gain degradation when the DLTS spectra are matched. Pre-dosed ion-irradiated samples show that ion induced ionization does not account for the differences in DLTS peak height but isochronal annealing studies suggest that light ions produce more VP defects than heavy ions to compensate for the lack of clusters that heavy ions produce. The creation of defect clusters by heavy ions is evident by the higher content of E4 and V* 2 defects compared to light ions.
The Tritium Plasma Experiment (TPE) is a unique high-flux linear plasma device that can handle beryllium, tritium, and neutron-irradiated plasma facing materials, and is the only existing device dedicated to directly study tritium retention and permeation in neutron-irradiated materials with tritium [M. Shimada et.al., Rev. Sci. Instru. 82 (2011) 083503 and and M. Shimada, et.al., Nucl. Fusion 55 (2015) 013008]. The plasma-material-interaction (PMI) determines a boundary condition for diffusing tritium into bulk PFCs, and the tritium PMI is crucial for enhancing fundamental sciences that dictate tritium fuel cycles and safety and are high importance to an FNSF and DEMO. Recently the TPE has undergone major upgrades in its electrical and control systems. New DC power supplies and a new control center enable remote plasma operations from outside of the contamination area for tritium, minimizing the possible exposure risk with tritium and beryllium. We discuss the electrical upgrade, enhanced operational safety, improved plasma performance, and development of optical spectrometer system. This upgrade not only improves operational safety of the worker, but also enhances plasma performance to better simulate extreme plasma-material conditions expected in ITER, Fusion Nuclear Science Facility (FNSF), and Demonstration reactor (DEMO). This work was prepared for the U.S. Department of Energy, Office of Fusion Energy Sciences, under the DOE Idaho Field Office contract number DE-AC07-05ID14517.
The influence of low doses of γ rays on the capacitive properties of structures based on mesoporous silicon has been investigated. The concentration distribution of dangling charged bonds over the layer depth, which changes under irradiation, has been found using the capacitance–voltage characteristics at different frequencies of the test signal. It is shown that the concentration and relaxation time of surface charged states in a structure with a mesoporous silicon layer decrease under γ irradiation, which makes the material promising for devices with controlled reactance (varactors) that are resistant to γ irradiation.
Capsule reactor irradiation experiments on fission electric devices under high radiation intensity to determine electrical properties and materials problems
Background: Average CT has been shown to be more accurate than conventional helical CT in quantitation of the PET data. The risk of CT irradiation of a cardiac implantable electronic device (CIED) causing an adverse event is low and is generally outweighed by the clinical benefit of a medically indicated examination. However, irradiation of CIED over one breath cycle in cine CT scan for average CT could impose risks on a patient who is pacing dependent. The purpose of this study was to demonstrate that low-dose average CT can be safe for CIED. Methods: A Medtronic CIED of model Protecta VR was submerged in a saline bath for a series of 4-s cine CT scans on a GE CT scanner programmed to deliver a 2-cm-wide radiation at a dose rate of 0.9 to 41.2 mGy/s to the CIED. The number of over-sensings was recorded as the interference of radiation to the CIED. Results: Dose rates ≥ 1.9 mGy/s caused over-sensing. The higher the dose rate, the more over-sensings there were. The lowest dose rate of 0.9 mGy/s did not cause any over-sensing. Conclusions: Low-dose average CT at 0.9 mGy/s can be safe for a CIED patient who is pacing dependent.
Here, we demonstrate the utility of focused, pulsed X-rays for investigating localized total ionizing dose effects in bipolar analog integrated circuits. Using the LM139 comparator as a test vehicle, we show how the technique can be used to identify the sources of degradation as a result of irradiating different transistors of the device and how this impacts the input bias current, input offset voltage, and output voltage. The 2-D mapping of the sensitive regions of transistors is presented, where the results of localized irradiation impact the monitored operational parameters.
Brookhaven National Laboratory (BNL), in collaboration with Ioanna Iliopulos and Christopher Boyd (independent contractors), conducted quantitative and qualitative surveys to document views and opinions of scientists and researchers with firsthand experience operating x-ray devices for a wide range of research applications. The goal of the study was to fill critical information gaps and identify misconceptions widely held among the research community regarding the transition from Cesium-137 irradiators to x-ray devices. The survey instrument focused on three distinct yet interrelated areas that impact users' experience: operational impacts, including infrastructure needs, workflow, personnel management, and training, and regulatory compliance; research design and investigation impacts, including calibration, dosimetry, continuity of previous studies, development of new research agendas, and the outcomes for both; and funding impacts, specifically how grant sources and opportunities have responded to the transition.
Uniaxial stress is used to detwin samples of orthorhombic iron based superconductors to study their intrinsic electronic anisotropy. Here we describe the development of a new detwinning setup enabling variable-load stress-detwinning with easy sample mounting/dismounting without the need to re-solder the contacts. It enables the systematic study of the anisotropy evolution as a function of an external parameter when the sample is modified between the measurements. In our case, the external parameter is the dose of 2.5 MeV electron irradiation at low temperature. We illustrate the approach by studying resistivity anisotropy in single crystals of Ba 1-x K x Fe 2 As 2 at x =0.25 where the much discussed unusual re-entrance of tetragonal C 4 phase, C 4 → C 2 → C 4 , is observed on cooling. With the described technique we found a significant anisotropy increase in C 2 phase after electron irradiation with dose of 2.35 C/cm 2 .
This paper reports on the degradation and recovery of two different series of commercially available InGaN-based blue light emitting diodes submitted to proton irradiation at 3 MeV and various fluences (10{sup 11}, 10{sup 13}, and 10{sup 14} p{sup +}/cm{sup 2}). After irradiation, we detected (i) an increase in the series resistance, in the sub-turn-on current and in the ideality factor, (ii) a spatially uniform drop of the output optical power, proportional to fluence, and (iii) a reduction of the capacitance of the devices. These results suggest that irradiation induced the generation of non-radiative recombination centers near the active region. This hypothesis is further confirmed by the results of the recovery tests carried out at low temperature (150 °C)
Total radiation dose and failure modes given for semiconductor devices exposed to neutron and gamma irradiation