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Results for “Layer by layer deposition”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

Density of Martian north polar layered deposits - Implications for composition

Mariner 9 and Viking Orbiter observations of the topography and mass of layered deposits in the north polar region of Mars suggest a density of about 1 gm/cu cm. Consideration of the self-compaction of these deposits further suggests that this low density cannot be explained by a high porosity sediment. Rather, a significant component of ice is probably required to account for the low value. The density further implies that the silicate fraction, regardless of its density (i.e., its composition), represents a volumetrically almost negligible component of the deposit. The most likely values, 5 percent silicate dust and 95 percent ice, agree well with a theoretical model for the formation of the deposits through cyclic incorporation of the perennial polar ice cap. Additional tests of this model may be posed in advance of future spacecraft missions to Mars.

Malin, M. C.↗
DOE OSTI2021

Atomic layer deposition of fluoride thin films

A secondary electron emissive coating. The coating is formed by atomic layer deposition of CaF 2 on a substrate by ALD half cycle exposure of an alkaline metal amidinate and ALD half cycle exposure of a fluorinated compound, where the deposition occurs at a reaction temperature greater than a highest sublimation temperature of the first metal precursor and the second metal precursor and less than 50° C. above the highest sublimation temperature.

Elam, Jeffrey W.↗
DOE OSTI2020

Atomic Layer Deposition for Preparing Isolated Co Sites on SiO 2 for Ethane Dehydrogenation Catalysis

Unlike Co clusters, isolated Co atoms have been shown to be selective for catalytic dehydrogenation of ethane to ethylene; however, preparation of isolated Co sites requires special preparation procedures. Here, we demonstrate that Atomic Layer Deposition (ALD) of tris(2,2,6,6-tetramethyl-3,5-heptanedionato)cobalt(III) (Co(TMHD) 3 ) on silica and other supports is effective in producing these isolated species. Silica-supported catalysts prepared with one ALD cycle showed ethylene selectivities greater than 96% at 923 K and were stable when CO 2 was co-fed with the ethane. Co catalysts prepared by impregnation formed clusters that were significantly less active, selective, and stable. Rates and selectivities also decreased for catalysts with multiple ALD cycles. Isolated Co catalysts prepared on Al 2 O 3 and MgAl 2 O 4 showed reasonable selectivity for ethane dehydrogenation but were not as effective as their silica counterpart.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Tunable doping of carbon nanotubes through engineered atomic layer deposition

A carbon nanotube field effect transistor (CNFET), that has a channel formed of carbon nanotubes (CNTs), includes a layered deposit of a nonstoichiometric doping oxide (NDO), such as HfOX, where the concentration of the NDO varies through the thickness of the layer(s). An n-type metal-oxide semiconductor (NMOS) CNFET made in this manner can achieve similar ON-current, OFF-current, and/or threshold voltage magnitudes to a corresponding p-type metal-oxide semiconductor (PMOS) CNFET. Such an NMOS and PMOS can be used to achieve a symmetric complementary metal-oxide semiconductor (CMOS) CNFET design.

Source record↗
DOE OSTI2025

Development of an atomic layer deposition system for deposition of alumina as a hydrogen permeation barrier

Tritium permeation into and through materials poses a critical challenge for the development of nuclear fusion reactors. Minimizing tritium permeation is essential for the safe and efficient use of available fuel supplies. In this work, we present the design, construction, and validation of custom atomic layer deposition (ALD) and deuterium permeation measurement systems aimed at developing thin-film hydrogen permeation barriers. Using the ALD system, we deposited conformal $\mathrm{Al}_{2}\mathrm{O}_{3}$ films on copper foil substrates and characterized their growth behavior, morphology, and composition. ALD growth rates of ∼1.1 Å/cycle were achieved for temperatures between 100 ∘ C and 210 ∘ C. Permeation measurements on bare and alumina coated copper foils revealed a significant reduction in deuterium flux with the addition of a ∼10 nm $\mathrm{Al}_{2}\mathrm{O}_{3}$ layer. While bare copper followed diffusion-limited transport consistent with Sievert’s law, the alumina-coated samples exhibited surface-limited, pore-mediated transport with linear pressure dependence. Arrhenius analysis showed distinct differences in activation energy for the two transport regimes, and permeation reduction factors exceeding an order of magnitude were observed. These results demonstrate the potential of ALD-grown $\mathrm{Al}_{2}\mathrm{O}_{3}$ films as effective hydrogen isotope barriers and provide a foundation for future studies on film optimization and integration into fusion-relevant components.

atomic layer deposition↗
NASA NTRS2000

Polar Layered Deposits: Preliminary Stratigraphic Assessment from MGS Observations

Global and hemispheric climatic, volcanic and impact events that modulated the formation of the Martian polar layered deposits can be revealed by detailed stratigraphic analyses of well-exposed sequences of those layers. Complete three-dimensional Mars Orbiting Laser Altimeter (MOLA) topography of the north and south polar deposits is now available, and very abundant Mars Orbiter Camera (MOC) imagery that is well calibrated is becoming available. This paper presents an assessment of the polar stratigraphic potential based on observations from Mars Global Surveyor (MGS) mapping cycles through M7. Additional information can be found in the original extended abstract.

Murray, B. C.↗
DOE OSTI2023

Atomic Layer Deposition of Cu Electrocatalysts on Gas Diffusion Electrodes for CO 2 Reduction

Electrochemical reduction of CO 2 using Cu catalysts enables the synthesis of C 2+ products including C 2 H 4 and C 2 H 5 OH. Here, in this study, Cu catalysts were fabricated using plasma-enhanced atomic layer deposition (PEALD), achieving conformal deposition of catalysts throughout 3-D gas diffusion electrode (GDE) substrates while maintaining tunable control of Cu nanoparticle size and areal loading. The electrochemical CO 2 reduction at the Cu surface yielded a total Faradaic efficiency (FE) > 75% for C 2+ products. Parasitic hydrogen evolution was minimized to a FE of ~10%, and a selectivity of 42.2% FE for C 2 H 4 was demonstrated. Compared to a line-of-sight physical vapor deposition method, PEALD Cu catalysts show significant suppression of C 1 products compared to C 2+ , which is associated with improved control of catalyst morphology and conformality within the porous GDE substrate. Finally, PEALD Cu catalysts demonstrated a stable performance for 15 h with minimal reduction in the C 2 H 4 production rate.

42 ENGINEERING↗
DOE OSTI2021

Identifying higher oxygenate synthesis sites in Cu catalysts promoted and stabilized by atomic layer deposited Fe 2 O 3

The conversion of syngas to higher oxygenates is an important step in the pathway towards the long-term sustainable production of fuels and chemicals. Mixed Cu/Fe catalysts combine metals with different CO activation characteristics, a property that makes them promising candidates for higher oxygenate production. However, Cu/Fe catalysts suffer from instability due to sintering and phase separation, and the active sites for higher oxygenate formation on these materials are not well understood. In this work, we use atomic layer deposition (ALD) to modify silica-supported Cu nanoparticles with monolayer precise amounts of Fe 2 O 3 and study the effects on catalyst structure, reactivity, and stability. We demonstrate that the Fe 2 O 3 ALD process is inherently selective towards deposition on the SiO 2 surface versus the Cu nanoparticles. As a result, a sufficiently thick Fe 2 O 3 layer surrounding the Cu nanoparticles acts as a barrier against Cu migration, preventing catalyst deactivation through sintering without covering the Cu. In syngas conversion reactions, we find that higher oxygenate selectivity increases with Fe 2 O 3 loading at low and intermediate ALD cycle numbers. Furthermore, using in situ X-ray absorption spectroscopy, we demonstrate that the Fe near the Cu nanoparticles is reduced to a metallic state under reaction conditions. From these measurements, we identify these metallic Cu/Fe interfaces as the active sites for higher oxygenate formation, which are most abundant at intermediate Fe 2 O 3 ALD cycle numbers. As the Fe 2 O 3 loading increases, higher oxygenate selectivity falls, resulting from encapsulation of the Cu nanoparticles by thick Fe 2 O 3 layers. Overall, the results demonstrate how thickness-controlled ALD Fe 2 O 3 can be used as both a promoter and stabilizer of Cu-based higher oxygenate synthesis catalysts.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Atomic Layer Deposition Overcoating Improves Catalyst Selectivity and Longevity in Propane Dehydrogenation

Propylene, a precursor for commodity chemicals and plastics, is produced by propane dehydrogenation (PDH). An increase in PDH yield via added catalyst activity, lifetime, or selectivity represents significant energy and economic savings. Using Pt dispersed on Al2O3 extrudate supports as a commercially relevant model system, we demonstrate that atomic layer deposition (ALD) metal oxide overcoats, used to tailor metal-active sites, can increase PDH yield and selectivity. We investigate the interplay of Pt loading, ALD overcoat thickness, and Al 2 O 3 support surface area on PDH activity, selectivity, and catalyst stability to show that applying a 6-8 A thick layer of Al 2 O 3 on low-surface area Al 2 O 3 supports of similar to 90 m 2 /g surface area yields the optimal combination of stability and activity, while increasing propylene selectivity from 91 to 96%. Increased stability upon steaming deactivation occurs because the Al 2 O 3 overcoat prevents the Pt nanoparticles from sintering. We speculate that the ALD overcoat selectively binds to the undercoordinated sites on the Pt nanoparticles, while leaving the more selective terrace sites available for dehydrogenation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Molecular layer deposition (MLD) modified SSZ-13 membrane for greatly enhanced H 2 separation

Zeolite membranes with high thermal stability and well-fined pores are attractive for gas separation. However, the defects are almost inevitable in zeolite membranes. Moreover, fine-tuning zeolitic pores for precise molecular separation is challenging. In this study, molecular layer deposition (MLD) was employed to deposit ultrathin microporous coating on SSZ-13 zeolite membrane. The MLD modified SSZ-13 composite membrane was highly selective for H 2 separation. With optimized MLD cycles, H 2 /N 2 and H 2 /CH 4 ideal selectivities as high as 35.6 and 427, respectively, were obtained, in strong contrast with approximately 5 for base SSZ-13 membrane. Our results suggest that MLD is a very promising technology to precisely modify the pore size of zeolite membranes, while minimizing flow through non-selective defects, for gas separation.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Construction of Inverse Metal–Zeolite Interfaces via Area-Selective Atomic Layer Deposition

The spatial confinement at metal–zeolite interfaces offers a powerful knob to steer the selectivity of chemical reactions on metal catalysts. However, encapsulating metal catalysts into small-pore zeolites remains a challenging task. Here, we demonstrate an inverse design of metal–zeolite interfaces, “metal-on-zeolite,” constructed by area-selective atomic layer deposition. This inverse design bypasses the intrinsic synthetic issues associated with metal encapsulation, offering a potential solution for the fabrication of task-specific metal–zeolite interfaces for desired catalytic applications. Infrared spectroscopy and several probe reactions confirmed the spatial confinement effects at the inverse metal–zeolite interfaces.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Thiol-Functionalized Adsorbents through Atomic Layer Deposition and Vapor-Phase Silanization for Heavy Metal Ion Removal

The removal of toxic heavy metal ions from water resources is crucial for environmental protection and public health. In this study, we address this challenge by developing a surface functionalization technique for the selective adsorption of these contaminants. Our approach involves atomic layer deposition (ALD) followed by vapor-phase silanization of porous substrates. We utilized porous silica gel powder (similar to 100 mu m particles, 89 m 2 /g surface area, similar to 30 nm pores) as an initial substrate. This powder was first coated with similar to 0.5 nm ALD Al 2 O 3 , followed by vapor-phase grafting of a thiol-functional silane. The modified powder, particularly in acidic conditions (pH = 4), showed high selectivity in adsorbing Cd(II), As(V), Pb(II), Hg(II), and Cu(II) heavy metal ions in mixed ion solutions over common benign ions (e.g., Na, K, Ca, and Mg). Langmuir adsorption isotherms and breakthrough adsorption studies were conducted to assess heavy metal binding affinity and revealed the order of Cd(II) < Pb(II) < Cu(II) < As(V) < Hg(II), with a significantly higher affinity for As(V) and Hg(II) ions. Time-dependent uptake studies demonstrated rapid removal of heavy metal ions from aqueous environments, with Hg(II) exhibiting the fastest adsorption kinetics on thiol-modified surfaces. Finally, these findings highlight the potential of ALD and vapor-phase silanization to create effective adsorbents for the targeted removal of hazardous contaminants from water.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Vapor-phase grafting of functional silanes on atomic layer deposited Al 2 O 3

Fundamental studies are needed to advance our understanding of selective adsorption in aqueous environments and develop more effective sorbents and filters for water treatment. Vapor-phase grafting of functional silanes is an effective method to prepare well-defined surfaces to study selective adsorption. In this investigation, we perform vapor phase grafting of five different silane compounds on aluminum oxide (Al2O3) surfaces prepared by atomic layer deposition. These silane compounds have the general formula L3Si–C3H6–X where the ligand, L, controls the reactivity with the hydroxylated Al2O3 surface and the functional moiety, X, dictates the surface properties of the grafted layer. We study the grafting process using in situ Fourier transform infrared spectroscopy and ex situ x-ray photoelectron spectroscopy measurements, and we characterize the surfaces using scanning electron microscopy, atomic force microscopy, and water contact angle measurements. Here, we found that the structure and density of grafted aminosilanes are influenced by their chemical reactivity and steric constraints around the silicon atom as well as by the nature of the anchoring functional groups. Methyl substituted aminosilanes yielded more hydrophobic surfaces with a higher surface density at higher grafting temperatures. Thiol and nitrile terminated silanes were also studied and compared to the aminosilane terminated surfaces. Uniform monolayer coatings were observed for ethoxy-based silanes, but chlorosilanes exhibited nonuniform coatings as verified by atomic force microscopy measurements.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Controlling Nanoscale Pore Size and Wall Composition in Polycarbonate Membranes via Atomic Layer Deposition and Sequential Infiltration Synthesis: Implications for High Water Permeance

Polymer membranes have a wide variety of applications, ranging from water treatment to energy storage. Many of these applications require precise control over the membrane porosity and surface chemistry. In this study, we explore the modification of isoporous polycarbonate (PC) track-etched membranes (PCTEs) by atomic layer deposition (ALD) and sequential infiltration synthesis (SIS) to tune the pore size and the pore wall surface chemistry. We first performed a detailed study of Al 2 O 3 ALD and SIS in PCTE using a variety of in situ and ex situ measurements. We discovered that short precursor exposure times are critical to achieve conformal Al 2 O 3 ALD in the PCTE nanopores, while longer precursor exposure times resulted in Al 2 O 3 SIS within the bulk of the PC leaving the membranes brittle. Next, we tuned the PCTE pore size via Al 2 O 3 ALD and studied its effect on the water contact angle and the water permeance. Here, we found that the membranes became more hydrophilic, and the permeance decreased with increasing ALD Al 2 O 3 cycles. Finally, we studied the effect of hydrophilic (SnO 2 )/hydrophobic (In 2 O 3 ) ALD metal oxide coatings on membrane properties. We found that the most hydrophilic SnO 2 showed the highest water flux and the least hydrophilic In 2 O 3 showed the lowest water flux through the PCTE membranes. Our results demonstrate that ALD is an effective method to tune the surface and transport properties of PCTE membranes, but care must be exercised to avoid SIS and bulk modification of the polymer.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Atomic-Layer-Deposited Aluminum Oxide Thin Films Probed with X-ray Scattering and Compared to Molecular Dynamics and Density Functional Theory Models

A better understanding of amorphous aluminum oxide’s structure and electronic properties is obtained through combined experimental and computational approaches. Grazing incidence X-ray scattering measurements were carried out on aluminum oxide thin films grown using thermal atomic layer deposition. The corresponding pair distribution functions (PDFs) showed structures similar to previously reported PDFs of solid-state amorphous alumina and molten alumina. Structural models based on crystalline alumina polymorphs (PDFgui) and amorphous alumina (molecular dynamics, MD) were examined for structural comparisons to the experimental PDF data. Smaller MD models were optimized and verified against larger models to allow for quantum chemical electronic structure calculations. The electronic structure of the amorphous alumina models yields additional insight into the band structure and electronic defects present in amorphous alumina that are not present in crystalline samples.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Toward Low-Thermal-Budget Hafnia-Based Ferroelectrics via Atomic Layer Deposition

Since the first report of ferroelectricity in fluorite structure oxides a decade ago, significant attention has been devoted to studying hafnia-based ferroelectric material systems due to their promising properties and opportunities. To achieve such ferroelectric fluorite structure oxides at low temperatures (below 400 °C), stabilizing the metastable noncentrosymmetric orthorhombic phase is crucial. This review provides a comprehensive overview of atomic layer deposition (ALD) techniques for obtaining the orthorhombic phase for low-temperature ferroelectric applications. We discuss optimization of the ALD process for synthesizing high-quality, low-temperature crystallizing ferroelectric films, including doping, precursor and oxygen source selection, deposition temperature, and interface engineering. In addition, the techniques for stabilizing the ferroelectric phase by regulating the thermal budget and stress with various annealing methods and stressors are discussed. In conclusion, the review focuses on different techniques to reduce the thermal budget required to acquire ferroelectricity, making hafnia-based ferroelectric materials compatible with back-end-of-line and three-dimensional integration for a variety of future applications, including flexible electronics applications.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2023

Carrier Recombination Dynamics of Surface-Passivated Epitaxial (100)Ge, (110)Ge, and (111)Ge Layers by Atomic Layer Deposited Al2O3

Germanium (Ge) and its heterostructures with compound semiconductors offer a unique optoelectronic functionality due to its pseudo-bandgap nature, that can be transformed to a direct bandgap material by providing strain and/or mixing with tin. Moreover, two crystal surfaces, (100)Ge and (110)Ge, that are technologically important for ultralow power fin or nanosheet transistors, could offer unprecedented properties with reduced surface defects after passivating these surfaces by atomic layer deposited (ALD) dielectrics. In this work, the crystallographically oriented epitaxial Ge/AlAs heterostructures were grown and passivated with ALD Al2O3 dielectrics, and the microwave photoconductive decay (u-PCD) technique was employed to evaluate carrier lifetimes at room temperature. The X-ray photoelectron spectroscopy analysis reveals no role of orientation effect in the quality of the ALD Al2O3 dielectric on oriented Ge layers. The carrier lifetimes measured using the u-PCD technique were benchmarked against unpassivated Ge/AlAs heterostructures. Excitation wavelengths of 1500 and 1800 nm with an estimated injection level of ~10^13 cm-3 were selected to measure the orientation-specific carrier lifetimes. The carrier lifetime was increased from 390 ns to 565 ns for (100)Ge and from 260 ns to 440 ns for (110)Ge orientations with passivation, whereas the carrier lifetime is almost unchanged for (111)Ge after passivation. This behavior indicates a strong dependence of the measured lifetime on surface orientation and surface passivation. The observed increase (>1.5x) in lifetime with Al2O3-passivated (100)Ge and (110)Ge surfaces is due to the lower surface recombination velocity compared to unpassivated Ge/AlAs heterostructures. The enhancement of carrier lifetime from passivated Ge/AlAs heterostructures with (100)Ge and (110)Ge surface orientations offers a path for the development of nanoscale transistors due to the reduced interface state density.

Al2O3↗