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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
NASA NTRS1977

A computer analysis of heterojunction and graded composition solar cells

The development and application of a variable composition solar cell computer analysis program is discussed. The basic device equations are derived and results of the computer analysis of several Al(x)Ga(1-x)As and GaAs(1-x)P(x) solar cell structures are presented along with a discussion of the effects of interface states and various composition and doping profiles on maximum solar cell efficiency. Interface states are found to be responsible for a severe reduction in the efficiency of GaAs(1-x)P(x) cells, but do not significantly affect the behavior of Al(x)Ga(1-x)As cells. The depth of the p-n junction below the wide bandgap window layer is a critical factor in determining the loss of minority carriers to interface recombination at the heterojunction.

Sutherland, J. E.↗
NASA NTRS1981

Heat sterilizable solid-propellant development

The binders tested were polyurethanes made from two hydroxy-terminated polybutadienes, R-45 and Butarez HT, one hydroxy-terminated butadiene-acrylonitrile copolymer, Hycar 1300X 17, and a hydroxy-terminated prepolymer, Esterdiol 560, made from the dimerized fatty acid Empol 1010. The isocyanates used most extensively were isophorone diisocyanate (IPDI) and a polymeric diisocyanate, DDI. Stress relaxation was used to examine the chemical changes that took place in the binder when subjected to the sterilization temperatures. The thermal stability of the oxidizer, ammonium perchlorate (AP), was tested by thermogravimetry in the isothermal and nonisothermal modes. The effect of particle size, recrystallization, moisture content, and doping on the heat stability of AP could be evaluated by this method. The volatile degradation products, obtained when AP samples were aged at 135 C for prolonged periods, were analyzed by mass spectroscopy.

Kalfayan, S. H.↗
NASA NTRS1983

Kinetic effects on trace element partitioning

A potential difficulty regarding the application of trace element abundance data to problems in igneous petrogenesis is related to the possibility that partitioning of trace elements among minerals and melt may not be an equilibrium process. It may rather be controlled by kinetic processes, specifically the interplay between crystal growth and diffusion of the trace elements in crystals and melt. The present investigation has the objective to quantify kinetic effects on trace element partitioning. Crystals of olivine, pyroxene, and plagioclase were grown rapidly from synthetic melts resembling naturally-occurring mafic melts and doped with La, Sm, and Lu to quantify the magnitude of the effect of crystal growth rate on concentration of excluded trace elements. Olivine melt partitioning failed to show any appreciable kinetic effects, while diopside/melt distribution coefficients increased by 70 percent when the crystals grew very rapidly.

Lindstrom, D. J.↗
NASA NTRS1990

Fiber optic and laser sensors VII; Proceedings of the Meeting, Boston, MA, Sept. 5-7, 1989

Various papers on fiber optic and laser sensors are presented. Individual topics addressed include: fiber optic photoelastic pressure sensor for high-temperature gases, fiber optic gyroscope using an eight-component LiNbO3 integrated optic circuit, design and performance of a fiber optic gyroscope using integrated optics, digital angular position sensor using wavelength division multiplexing, simple repeatable fiber optic intensity sensor for temperature measurement, compensation for effects of ambient temperature on rare-earth-doped fiber optic thermometer.

Udd, Eric↗
NASA NTRS1992

Molecular beam epitaxy engineered III-V semiconductor structures for low-power optically addressed spatial light modulators

Device approaches are investigated for optically addressed SLMs based on molecular-beam epitaxy (MBE) engineered III-V materials and structures. Strong photooptic effects can be achieved in periodically delta-doped multiple-quantum-well structures, but are still insufficient for high-contrast modulation with only single- or double-pass absorption through active layers of practical thickness. The asymmetric Fabry-Perot cavity approach is employed to permit extinction of light due to interference of light reflected from the front and back surfaces of the cavity. This approach is realized with an all-MBE-grown structure consisting of GaAs/AlAs quarter-wave stack reflector grown over the GaAs substrate as the high reflectance mirror and the GaAs surface as the low reflectance mirror. High-contrast modulation is achieved using a low-power InGaAs/GaAs quantum well laser for the control signal.

Larsson, Anders G.↗
NASA NTRS1993

Laser diode ignition activities at Sandia National Laboratories

The topics are presented in viewgraph form and include the following: ignition subsystems, enhanced safety, optical ordnance power densities, optical ignition factors, low energy optical ordnance program, absorptance of 2-(5-cyanotetrazolato) pentaaminecobalt(III) perchlorate (CP) near 800 nm, power dependence of doped CP, system operational electrical requirements, dopant concentration effects for different CP particle sizes, ZR/KCLO4 optical ignition thresholds, and electrostatic discharge testing.

Merson, John A.↗
NASA NTRS2003

Electrospun Polyaniline/Polyethylene Oxide Nanofiber Field Effect Transistor

We report on the observation of field effect transistor (FET) behavior in electrospun camphorsulfonic acid doped polyaniline(PANi)/polyethylene oxide(PE0) nanofibers. Saturation channel currents are observed at surprisingly low source/drain voltages. The hole mobility in the depletion regime is 1.4 x 10(exp -4) sq cm/V s while the 1-D charge density (at zero gate bias) is calculated to be approximately 1 hole per 50 two-ring repeat units of polyaniline, consistent with the rather high channel conductivity (approx. 10(exp -3) S/cm). Reducing or eliminating the PEO content in the fiber is expected to enhance device parameters. Electrospinning is thus proposed as a simple method of fabricating 1-D polymer FET's.

Pinto, N. J.↗
NASA NTRS1972

Shielded silicon gate complementary MOS integrated circuit.

An electrostatic shield for complementary MOS integrated circuits was developed to minimize the adverse effects of stray electric fields created by the potentials in the metal interconnections. The process is compatible with silicon gate technology. N-doped polycrystalline silicon was used for all the gates and the shield. The effectiveness of the shield was demonstrated by constructing a special field plate over certain transistors. The threshold voltages obtained on an oriented silicon substrate ranged from 1.5 to 3 V for either channel. Integrated inverters performed satisfactorily from 3 to 15 V, limited at the low end by the threshold voltages and at the high end by the drain breakdown voltage of the n-channel transistors. The stability of the new structure with an n-doped silicon gate as measured by the shift in C-V curve under 200 C plus or minus 20 V temperature-bias conditions was better than conventional aluminum gate or p-doped silicon gate devices, presumably due to the doping of gate oxide with phosphorous.

Lin, H. C.↗
NASA NTRS1981

Effect of oxide films on hydrogen permeability of candidate Stirling engine heater head tube alloys

The effect of oxide films developed in situ from CO/CO2 doped hydrogen on high pressure hydrogen permeability at 820 C was studied on N-155, A-286, IN 800, 19-9DL, Nitronic 40, HS-188, and IN 718 tubing in a Stirling materials simulator. The hydrogen permeability decreased with increasing dopant levels of CO or CO2 and corresponding decreases in oxide porosity. Minor reactive alloying elements strongly influenced permeability. At high levels of CO or CO2, a liquid oxide formed on alloys with greater than 50 percent Fe. This caused increased permeability. The oxides formed on the inside tube walls were analyzed and their effective permeabilities were calculated.

Schuon, S. R.↗
NASA NTRS1975

Effects of processing on the carrier lifetime in silicon solar cells

Measurements were taken to determine the effects that solar cell processing steps have on the minority carrier lifetime in silicon. The experimental work included measurements of diffusion lengths of the silicon at various stages of cell fabrication, of solar cell properties, and of the PN junction properties for ingots covering a wide range of doping and other ingot properties. Resistivities covered the range of 0.01 to 10 ohm-cm, and combinations of extreme concentrations (high and low) of dislocations and oxygen were included. The results showed that the major cell process steps did not usually cause any appreciable change in diffusion lengths. The solar cell currents obtained supported the diffusion length measurements. The effects of heavy doping concentrations on solar cell performance were studied. Attempts were made to relate the voltage behavior of the cells with the diode properties and the properties of the ingots.

Iles, P. A.↗
NASA NTRS1971

Development of lithium diffused radiation resistant solar cells, part 2

The work performed to investigate the effect of various process parameters on the performance of lithium doped P/N solar cells is described. Effort was concentrated in four main areas: (1) the starting material, (2) the boron diffusion, (3) the lithium diffusion, and (4) the contact system. Investigation of starting material primarily involved comparison of crucible grown silicon (high oxygen content) and Lopex silicon (low oxygen content). In addition, the effect of varying growing parameters of crucible grown silicon on lithium cell output was also examined. The objective of the boron diffusion studies was to obtain a diffusion process which produced high efficiency cells with minimal silicon stressing and could be scaled up to process 100 or more cells per diffusion. Contact studies included investigating sintering of the TiAg contacts and evaluation of the contact integrity.

Payne, P. R.↗
NASA NTRS2014

Negative Dielectric Constant Material Based on Ion Conducting Materials

Metamaterials or artificial negative index materials (NIMs) have generated great attention due to their unique and exotic electromagnetic properties. One exemplary negative dielectric constant material, which is an essential key for creating the NIMs, was developed by doping ions into a polymer, a protonated poly(benzimidazole) (PBI). The doped PBI showed a negative dielectric constant at megahertz (MHz) frequencies due to its reduced plasma frequency and an induction effect. The magnitude of the negative dielectric constant and the resonance frequency were tunable by doping concentration. The highly doped PBI showed larger absolute magnitude of negative dielectric constant at just above its resonance frequency than the less doped PBI.

Gordon, Keith L.↗
NASA NTRS2017

Negative Dielectric Constant Material Based on Ion Conducting Materials

Metamaterials or artificial negative index materials (NIMs) have generated great attention due to their unique and exotic electromagnetic properties. One exemplary negative dielectric constant material, which is an essential key for creating the NIMs, was developed by doping ions into a polymer, a protonated poly (benzimidazole) (PBI). The doped PBI showed a negative dielectric constant at megahertz (MHz) frequencies due to its reduced plasma frequency and an induction effect. The magnitude of the negative dielectric constant and the resonance frequency were tunable by doping concentration. The highly doped PBI showed larger absolute magnitude of negative dielectric constant at just above its resonance frequency than the less doped PBI.

Gordon, Keith L.↗