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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12

Review of pulsed power-driven high energy density physics research on Z at Sandia

Pulsed power accelerators compress electrical energy in space and time to provide versatile experimental platforms for high energy density and inertial confinement fusion science. The 80-TW “Z” pulsed power facility at Sandia National Laboratories is the largest pulsed power device in the world today. Z discharges up to 22 MJ of energy stored in its capacitor banks into a current pulse that rises in 100 ns and peaks at a current as high as 30 MA in low-inductance cylindrical targets. Considerable progress has been made over the past 15 years in the use of pulsed power as a precision scientific tool. This paper reviews developments at Sandia in inertial confinement fusion, dynamic materials science, x-ray radiation science, and pulsed power engineering, with an emphasis on progress since a previous review of research on Z in Physics of Plasmas in 2005.

Sinars, D. B. (ORCID:0000000155473532)↗

A novel, magnetically driven convergent Richtmyer–Meshkov platform

Here, we introduce a novel experimental platform for the study of the Richtmyer–Meshkov instability in a cylindrically converging geometry using a magnetically driven cylindrical piston. Magnetically driven solid liner implosions are used to launch a shock into a liquid deuterium working fluid and, ultimately, into an on-axis rod with a pre-imposed perturbation. The shock front trajectory is tracked through the working fluid and up to the point of impacting the rod through the use of on axis photonic Doppler velocimetry. This configuration allows for precise characterization of the shock state as it impacts the perturbed rod interface. Monochromatic x-ray radiography is used to measure the post-shock interface evolution and rod density profile. The ALEGRA MHD model is used to simulate the dynamics of the experiment in one dimension. We show that late in time the perturbation growth becomes non-linear as evidenced by the observation of high-order harmonics, up to n = 5. Two dimensional simulations performed using a combination of the GORGON MHD code and the xRAGE radiation hydrodynamics code suggest that the late time non-linear growth is modified by convergence effects as the bubbles and spikes experience differences in the pressure of the background flow.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Identification of the defect dominating high temperature reverse leakage current in vertical GaN power diodes through deep level transient spectroscopy

Deep level defects in wide bandgap semiconductors, whose response times are in the range of power converter switching times, can have a significant effect on converter efficiency. We use Deep Level Transient Spectroscopy (DLTS) to evaluate such defect levels in the n- drift layer of vertical GaN (v-GaN) power diodes with VBD ~ 1500 V. DLTS reveals three energy levels that are at ~0.6 eV (highest density), ~0.27 eV (lowest density) and ~ 45 meV (a dopant level) from the conduction band. Dopant extraction from Capacitance-Voltage measurement test (C-V) at multiple temperatures enables trap density evaluation, and the ~0.6 eV trap has a density of 1.2 × 10 15 cm -3 . Here, the 0.6 eV energy level and its density are similar to a defect that is known to cause current collapse in GaN based surface conducting devices (like HEMTs). Analysis of reverse bias currents over temperature in the v-GaN diodes indicates a predominant role of the same defect in determining reverse leakage current at high temperatures, reducing switching efficiency.

42 ENGINEERING↗

Interfacial defect reduction enhances universal power law response in Mo–SiNx granular metals

Granular metals (GMs), consisting of metal nanoparticles separated by an insulating matrix, frequently serve as a platform for fundamental electron transport studies. However, few technologically mature devices incorporating GMs have been realized, in large part because intrinsic defects (e.g., electron trapping sites and metal/insulator interfacial defects) frequently impede electron transport, particularly in GMs that do not contain noble metals. Here, we demonstrate that such defects can be minimized in molybdenum–silicon nitride (Mo–SiN x ) GMs via optimization of the sputter deposition atmosphere. For Mo–SiN x GMs deposited in a mixed Ar/N 2 environment, x-ray photoemission spectroscopy shows a 40%–60% reduction of interfacial Mo-silicide defects compared to Mo–SiN x GMs sputtered in a pure Ar environment. Electron transport measurements confirm the reduced defect density; the dc conductivity improved (decreased) by 10 4 –10 5 and the activation energy for variable-range hopping increased 10×. Since GMs are disordered materials, the GM nanostructure should, theoretically, support a universal power law (UPL) response; in practice, that response is generally overwhelmed by resistive (defective) transport. Here, the defect-minimized Mo–SiN x GMs display a superlinear UPL response, which we quantify as the ratio of the conductivity at 1 MHz to that at dc, Δσ ω ⁠. Remarkably, these GMs display a Δσ ω up to 10 7 , a three-orders-of-magnitude improved response than previously reported for GMs. By enabling high-performance electric transport with a non-noble metal GM, this work represents an important step toward both new fundamental UPL research and scalable, mature GM device applications.

36 MATERIALS SCIENCE↗

In-Plane Anisotropy of Charge Density Wave Fluctuations in 1⁢𝑇−TiSe 2

We report measurements of anisotropic triple-𝑞 charge density wave (CDW) fluctuations in the transition metal dichalcogenide 1⁢𝑇−TiSe 2 over a large volume of reciprocal space with x-ray diffuse scattering. Above the transition temperature, 𝑇 CDW , the in-plane diffuse scattering is marked by ellipses which reveal that the in-plane fluctuations are anisotropic. In addition, the out-of-plane diffuse scattering is characterized by rodlike structures which indicate that the CDW fluctuations in neighboring layers are largely decoupled. Furthermore, our analysis of the diffuse scattering line shapes and orientations suggests that the three charge density wave components contain independent phase fluctuations with a hierarchy of length scales, leading to intricate fluctuation patterns that go beyond the conventional 2D-to-3D crossover picture.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Fluid-phase helium: Shock-compression experiments, quantum molecular dynamics simulations, and development of an equation of state

Helium (He) plays a critical role in numerous areas ranging from the study of celestial objects like brown dwarfs and gas giants to modern-day technologies like nuclear energy and rocket propulsion. For many of these applications, it is essential to have a reliable equation of state (EOS) for He that yields an accurate representation of its thermodynamic behavior. To help constrain and develop such EOS models, we have performed a series of shock-compression experiments on cryogenic liquid He to pressures exceeding 100 GPa using a magnetically accelerated flyer plate on Sandia National Laboratories' Z-machine. We have also performed quantum molecular dynamics simulations that are consistent with our shock measurements. None of the previously available EOSs agree with our experimental and simulation results, motivating the development of a fluid-phase He EOS that we present in this study. Here, we show that our EOS yields good agreement with published data that span temperatures and pressures encountered across a diverse array of applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Pathways to the Next-Generation Power System With Inverter-Based Resources: Challenges and recommendations

Managing the stability of today's electric power systems is based on decades of experience with the physical properties and control responses of large synchronous generators. Today's electric power systems are rapidly transitioning toward having an increasing proportion of generation from nontraditional sources, such as wind and solar (among others), as well as energy storage devices, such as batteries. In addition to the variable nature of many renewable generation sources (because of the weather-driven nature of their fuel supply), these newer sources vary in size - from residential-scale rooftop systems to utility-scale power plants - and they are interconnected throughout the electric grid, both from within the distribution system and directly to the high-voltage transmission system. Most important for our purposes, many of these new resources are connected to the power system through power electronic inverters. Collectively, we refer to these sources as inverter-based resources.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Performance Specifications for Grid-Forming Technologies

Standards and specifications for inverter-based resources (IBRs) focus primarily on grid-following (GFL) technologies at present. Therefore, these may generally not be appropriate for application in power systems to ensure acceptable operation with grid-forming (GFM) technologies. In some cases, the direct application of prevailing standards and specifications may not be appropriate for - or may even inadvertently limit the potential of - GFM resources. The Universal Interoperability for Grid- Forming Inverters (UNIFI) Consortium is a U.S. Department of Energy funded effort to advance GFM technology. The UNIFI team brings together academic, industrial, and national-lab researchers as well as industry stakeholders (utilities, system operators, vendors) to collaboratively pursue advances in a broad range of GFM technologies. This paper introduces a set of system- and unit-level specifications driven by consensus across the UNIFI project team. These are intended to seamlessly integrate GFM technologies at any scale into power-systems operation and control in a vendor-agnostic manner. A suite of illustrative simulation results that demonstrate the application of and adherence to the proposed specifications are included.

grid-forming inverter↗

Bulk Power System Dynamics with Varying Levels of Synchronous Generators and Grid-Forming Power Inverters

Inverters using phase-locked loops for control depend on voltages generated by synchronous machines to operate. This might be problematic if much of the conventional generation fleet is displaced by inverters. To solve this problem, grid-forming control for inverters has been proposed as being capable of autonomously regulating grid voltages and frequency. Presently, the performance of bulk power systems with massive penetration of grid-forming inverters has not been thoroughly studied as to elucidate benefits. Hence, this paper presents inverter models with two grid-forming strategies: virtual oscillator control and droop control. The two models are specifically developed to be used in positive-sequence simulation packages and have been implemented in PSLF. The implementations are used to study the performance of bulk power grids incorporating inverters with gridforming capability. Specifically, simulations are conducted on a modified IEEE 39-bus test system and the microWECC test system with varying levels of synchronous and inverter-based generation. The dynamic performance of the tested systems with gridforming inverters during contingency events is better than cases with only synchronous generation.

24 POWER TRANSMISSION AND DISTRIBUTION↗

State-of-the-Art Medium- and High-Voltage Silicon Carbide Power Modules, Challenges and Mitigation Techniques: A Review

Silicon carbide (SiC) power modules have been demonstrated potential for improving power density and efficiency for low-voltage power electronics systems. This has resulted in a paradigm shift toward development of medium-voltage and high-voltage (MV/HV) SiC power modules to revolutionize the future power grid and transportation systems. However, designing MV/HV SiC power modules involves significant design challenges due to higher blocking voltage and exacerbation of side effects due to high switching dv/dt and di/dt of SiC devices-concerns that may not be as critical as in low-voltage module development. This article reviews the development of state-of-the-art MV/HV SiC power modules, ranging from 3.3 kV to 40 kV, from both industry and academia. First, a discussion on SiC modules based on voltage level is presented. This is followed by a discussion of challenges associated with designing and testing MV/HV modules- including parasitic controls, electromagnetic interference (EMI), partial discharge, and thermal management-and the corresponding mitigation approaches from various perspectives. We conclude with a summary of major findings and future directions for the development of MV/HV modules.

EMI↗