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Missions to the surface of Venus have had limitedlife due to the extreme environmental conditions. Theshort life has limited the science that is achievable,and there are gaps in some science, such asseismology, which is enabled by long life. This worksummarizes technical advances that are preparing usfor long-duration (weeks to months) Venus surfacemissions.
One of the most intriguing planets in our solar system for both solar system and extra-solar system science is Venus. Venus is the planet most similar to Earth in several key ways and many believe Venus-like planets are more common around other suns than are Earth-like planets. Therefore scientific understanding of our sister planet is a high priority. However, the hostile environmental conditions at the surface coupled with thick acid clouds and dense atmosphere have made understanding this planet very challenging. Remote sensing of surface features and near surface environments is very limited. The hostile environment has also limited the ability of landers to survive, in fact the longest living asset survived just over two hours. Even after over 50 years of attempts to explore Venus, many key measurements, especially near the surface, are still in the future. NASA has begun to undertake steps to overcome the technical challenges and is developing the capability for sustained operations and science return from this important body. For example, recent technology advances in high temperature sensors, electronics, power, and other systems have been funded and this, combined with the new capabilities to replicate Venus conditions on Earth, are changing the outlook for Venus surface exploration.
Values of the bond dissociation energies, ionization potentials, and electron affinities that were taken from the literature are presented in tables for some monatomic, diatomic, and polyatomic molecules which are found in many high-temperature chemical reactions including combustion reactions. Much of the information came from literature published after 1950 which either reported experimental and theoretical energy values or gave a review of previous literature on the subject. In some cases values for the bond dissociation energies were calculated from recently published heats of formation.
The electronic and thermal transport properties of the most promising material systems for high temperature thermoelectric energy conversion are discussed from a theoretical and experimental viewpoint. Rare earth chalcogenides and boron-rich borides are considered in terms of thermal conductivity and transport mechanisms. Rare earth chalcogenides are generally n-type semiconductors and boron-rich borides are generally p-type semiconductors.
This presentation concentrates on the potential of long duration Venus surface missions, and the role of Silicon Carbide (SiC) electronics and sensor advancements in such exploration. For example, SiC integrated circuit (IC) electronics have matured to a state where a simple long-life scientific probe is feasible for extended Venus surface operations. These electronics have been demonstrated for more than a year at 500˚C, and 60 days in high-fidelity simulated Venus surface conditions [1-2]. Further, high temperature chemical sensing technology, including SiC-based gas sensors, integrated with SiC electronics can enable future exploration of the Venus surface atmosphere [3]. Continued maturation of these high temperature electronics and sensors has been part of the Long-Lived In-Situ Solar System Explorer (LLISSE) project to provide an operational system for in situ exploration of the Venus surface up to 60 days [4]. A key focus of this work includes increasing the complexity and decreasing the power consumption of the ICs which will pave the way to enhanced capabilities, such as long-duration Venus seismic measurements and other mission capabilities currently under development. This is in parallel to work expanding the capabilities of the sensor technology to provide science measurements on the Venus surface. This presentation will give an overview of possible extended duration Venus surface exploration and some of the SiC-based technologies that can enable this exploration.
A very high purity (99.99+%) high temperature co-fired ceramic (HTCC) alumina has recently become commercially available. The raw material of this HTCC alumina is very different from conventional HTCC alumina, and more importantly there is no glass additive in this alumina material for co-firing processing. Previously, selected HTCC and LTCC (low temperature co-fired ceramic) alumina materials were evaluated at high temperatures as dielectric and compared to a regularly sintered 96% polycrystalline alumina (96% Al2O3), where 96% alumina was used as the benchmark. A prototype packaging system based on regular 96% alumina with Au thickfilm metallization successfully facilitated long term testing of high temperature silicon carbide (SiC) electronic devices for over 10,000 hours at 500 C. In order to evaluate this new high purity HTCC alumina for possible high temperature packaging applications, the dielectric properties of this HTCC alumina substrate were measured and compared with those of 96% alumina and a previously tested LTCC alumina from room temperature to 550 C at frequencies of 120 Hz, 1 KHz, 10 KHz, 100 KHz, and 1 MHz. A parallel-plate capacitive device with dielectric of the HTCC alumina and precious metal electrodes were used for measurements of the dielectric constant and dielectric loss of the co-fired alumina material in the temperature and frequency ranges. The capacitance and AC parallel conductance of the capacitive device were directly measured by an AC impedance meter, and the dielectric constant and parallel AC conductivity of the dielectric were calculated from the capacitance and conductance measurement results. The temperature and frequency dependent dielectric constant, AC conductivity, and dissipation factor of the HTCC alumina substrate are presented and compared to those of 96% alumina and a selected LTCC alumina. Other technical advantages of this new co-fired material for possible high packaging applications are also discussed.
The harsh environment inherent in propulsion systems is especially challenging for Smart Sensor Systems; this paper addresses technology development for such applications. A basic sensing system for high temperature wireless pressure monitoring composed of a sensor, electronics, and wireless communication with scavenged power developed for health monitoring of aircraft engines and other high temperature applications has been demonstrated at 475 C. Other efforts will be discussed including a brief overview of the status of high temperature electronics and sensors, as well as their use and applications.
Gold thick-film metallization and 96 alumina substrate based prototype packaging system developed for 500C SiC electronics and sensors is briefly reviewed, the needs of improvement are discussed. A high temperature co-fired alumina material system based packaging system composed of 32-pin chip-level package and printed circuit board is discussed for packaging 500C SiC electronics and sensors.
Electron attachment of electrophilic gases for high temperature plasma quenching
The present conference discusses low density aerothermodynamics, the drag of bodies in rarefied hypersonic flow, transitional hypervelocity aerodynamic simulation and scaling, high temperature kinetics and transport properties, electron-nitrogen molecule collisions in high temperature nonequilibrium air, theoretical studies of dissociative recombination, the transport properties of some atom/ion interactions in air, and the interaction energies, dipole transition moments, and transport cross sections of N(+)-N and O(+)-O. Also discussed are the results of studies of potential fluid mechanisms for enhanced stagnation heating, vortex-induced leeward heating on a biconic at Mach 6 and 10, the effects of surface discontinuities on convective heat transfer in hypersonic flow, computational convergence in chemical reacting flows, and three-dimensional viscous shock layer applications for the Space Shuttle Orbiter.
System-on-a-chip (SOC) processes are under intense development for high-speed, high frequency transceiver circuitry. As frequencies, data rates, and circuit complexity increases, the need for substrates that enable high-speed analog operation, low-power digital circuitry, and excellent isolation between devices becomes increasingly critical. SiGe/Si modulation doped field effect transistors (MODFETs) with high carrier mobilities are currently under development to meet the active RF device needs. However, as the substrate normally used is Si, the low-to-modest substrate resistivity causes large losses in the passive elements required for a complete high frequency circuit. These losses are projected to become increasingly troublesome as device frequencies progress to the Ku-band (12 - 18 GHz) and beyond. Sapphire is an excellent substrate for high frequency SOC designs because it supports excellent both active and passive RF device performance, as well as low-power digital operations. We are developing high electron mobility SiGe/Si transistor structures on r-plane sapphire, using either in-situ grown n-MODFET structures or ion-implanted high electron mobility transistor (HEMT) structures. Advantages of the MODFET structures include high electron mobilities at all temperatures (relative to ion-implanted HEMT structures), with mobility continuously improving to cryogenic temperatures. We have measured electron mobilities over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively in MODFET structures. The electron carrier densities were 1.6 and 1.33 x 10(exp 12)/sq cm at room and liquid helium temperature, respectively, denoting excellent carrier confinement. Using this technique, we have observed electron mobilities as high as 900 sq cm/V-sec at room temperature at a carrier density of 1.3 x 10(exp 12)/sq cm. The temperature dependence of mobility for both the MODFET and HEMT structures provides insights into the mechanisms that allow for enhanced electron mobility as well as the processes that limit mobility, and will be presented.
A range of aerospace application related to planetary exploration and aeronautic engine operations require Smart Sensor System technologies operational in harsh environments. A Smart Sensor System as described here implies the use of sensors combined with electronics and other supporting technologies. For example, missions to the surface of planets like Venus or Mercury are challenged by extreme temperatures and environments, e.g., extended Venus operation 465°C [1]. In response, NASA has been developing capabilities for a small lander that is designed to operate for months in the extreme temperatures. These capabilities span electronics, sensors, communications, and power. Such a lander would enable new revolutionary science. Similar game changing capabilities are enabled by the introduction of high temperature smart systems into aeronautic engine applications to enable distributed intelligence within the engine system [2]. Core to meeting these applications is operational harsh environment electronics, corresponding sensor systems, and their integration. This presentation concentrates on the status of Smart System technologies emphasizing the role of Silicon Carbide (SiC) electronics and sensors. For example, SiC integrated circuit (IC) electronics have matured to a state where a simple long-life scientific probe is feasible for extended Venus surface operations [1, 3]. Maturation of these high temperature electronics and other technologies has been part of NASA projects to provide an operational system for in situ exploration of the Venus surface for up to 60 days [1,3-4]. This is in parallel to work expanding the capabilities of the sensor technology to provide science measurements on the Venus surface. This technology development, as well as that for other planetary applications and intelligent high temperature engine operations, will be discussed.
This paper focuses on what can be learned about the emission measure distribution and certain atomic physics parameters from spectral lines of highly ionized ions of sulfur, calcium, and iron that appear in solar flare spectra. The particular lines chosen for analysis allow the electron temperature to be determined independently of the assumption of ionization equilibrium. An attempt is made to find emission measure models based on selected functional dependences of emission measure on temperature that reproduce the observed temperatures deduced from spectral line ratios as well as the relative intensities of resonance lines of different elements.
Fast thermal dephasing limits macroscopic quantum phenomena to cryogenic conditions and hinders their use at ambient temperatures. For electronic excitations in condensed media, dephasing is mediated by thermal lattice motion. Therefore, taming the lattice influence is essential for creating collective electronic quantum states at high temperatures. Although there are occasional reports of high-T c quantum effects across different platforms, it is unclear which lattice characteristics and electron–lattice interactions lead to macroscopically coherent electronic states in solids. Here we studied intensity fluctuations in the macroscopic polarization during the emergence of superfluorescence in a lead halide perovskite and showed that spontaneously synchronized polaronic lattice oscillations accompany collective electronic dipole emission. We further developed an effective field model and theoretically confirmed that exciton–lattice interactions lead to a new electronically and structurally entangled coherent extended solitonic state beyond a critical polaron density. The analysis shows a phase transition with two processes happening in tandem: incoherent disordered polaronic lattice deformations establish an order, while macroscopic quantum coherence among excitons simultaneously emerges. Recombination of excitons in this state culminates in superfluorescence at high temperatures. Our study establishes fundamental connections between the transient superfluorescence process observed after the impulsive excitation of perovskites and general equilibrium phase transitions achieved by thermal cooling. By identifying various electron–lattice interactions in the perovskite structure and their respective role in creating collectively coherent electronic effects in solids, our work provides unprecedented insight into the design and development of new materials that exhibit high-temperature macroscopic quantum phenomena.
Thermionic emission is the process in which materials at sufficiently high temperature spontaneously emit electrons. This process occurs when electrons in a material gain sufficient thermal energy from heating to overcome the material's potential barrier, referred to as the work function. For most bulk materials very high temperatures (greater than 1500 K) are needed to produce appreciable emission. Carbon‐based nanomaterials have shown significant promise as emission materials because of their low work functions, nanoscale geometry, and negative electron affinity. One method of producing these materials is through the process known as microhollow cathode PECVD. In a microhollow cathode plasma, high energy electrons oscillate at very high energies through the Pendel effect. These high energy electrons create numerous radical species and the technique has been shown to be an effective method of growing carbon based nanomaterials. In this work, we explore the thermionic emission properties of carbon based nanomaterials produced by microhollow cathode PECVD under a variety of synthesis conditions. Initial studies demonstrate measureable current at low temperatures (approximately 800 K) and work functions (approximately 3.3 eV) for these materials.
The Automaton Rover for Extreme Environments (AREE) is a NASA Innovative Advanced Concept (NIAC) funded study focused on enabling long duration science on Venus by replacing vulnerable electronics with an entirely mechanical design. By utilizing high temperature alloys, the rover would survive on the surface of Venus for weeks if not months. The rover concept harvests wind energy using a turbine and stores it in a constant force spring. The mobility system would be guided by a mechanical computer and logic system, programed to carry out the mission. It would collect basic science data such as wind speed, temperature, and seismic events. Communicating the data back to Earth is the most challenging aspect of the system design with multiple options being explored in a trade: a simple electronic high temperature transponder, a retroreflector target or inscribing phonograph style records to be launched via a balloon to a high altitude drone capable of transmitting the data back to Earth. AREE is not only a new exciting in-situ rover concept, but also a paradigm shift to conducting in-situ science in extreme environments. Traditional extreme environment vehicles collect as many diverse data points as possible in the short period of time before system failure. AREE breaks that trend by exploring what can be done with only a few basic scientific measurements, but recorded over long periods of time. In addition to Venus, the concept can be useful in other extreme environments in the solar system including Mercury, Jupiter's radiation belts, the interiors of gas giants, the mantle of the Earth and volcanoes throughout the solar system.
Examination of a two-component ?model' for the solar wind, in which the protons become collisionless beyond a distance from the solar center equal to or greater than 10 solar radii, where they are already highly supersonic. The proton temperatures are found from the double adiabatic equation of state. The electrons are highly subsonic, and their temperature profile is prescribed ad hoc. The momentum equations for the electrons and protons are solved subject to the conditions of quasi-neutrality and zero charge efflux from the sun. Some of the principal results are: (1) the proton thermal anisotropy is substantially reduced when solar rotation is considered; (2) solar rotation leads to significantly lower mean proton temperatures; and (3) the electron temperature profile in the supersonic region is the primary parameter determining flow acceleration there.
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