Metal Contact Processing Experiments Towards Realizing 500 °C Durable RF 4H-SiC BJTs

Srihari Rajgopal; David J Spry; Dorothy Lukco; Philip G Neudeck

NASA NTRS · 20230012875

Metal Contact Processing Experiments Towards Realizing 500 °C Durable RF 4H-SiC BJTs

Srihari Rajgopal·David J Spry·Dorothy Lukco·Philip G Neudeck

Abstract

This paper presents results from metal contact processing experiments towards the implementationof durable 500 deg.C high-frequency 4H-SiC bipolar junction transistors (BJTs). Specifically, p-type ohmic contacts have been demonstrated on a 0.25 μm-thick p-type homoepitaxial layer of doping 8 x 1018± 4 x 1018cm-3. Finally, preliminary current-voltage characteristics of fabricated BJTs are presented.

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RF SiC 4H-SiC BJT wide bandgap electronics high temperature electronics

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Srihari Rajgopal, David J Spry, Dorothy Lukco, Philip G Neudeck. Metal Contact Processing Experiments Towards Realizing 500 °C Durable RF 4H-SiC BJTs. https://ntrs.nasa.gov/citations/20230012875

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