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NASA NTRS2012

Prognostics Approach for Power MOSFET Under Thermal-Stress

The prognostic technique for a power MOSFET presented in this paper is based on accelerated aging of MOSFET IRF520Npbf in a TO-220 package. The methodology utilizes thermal and power cycling to accelerate the life of the devices. The major failure mechanism for the stress conditions is dieattachment degradation, typical for discrete devices with leadfree solder die attachment. It has been determined that dieattach degradation results in an increase in ON-state resistance due to its dependence on junction temperature. Increasing resistance, thus, can be used as a precursor of failure for the die-attach failure mechanism under thermal stress. A feature based on normalized ON-resistance is computed from in-situ measurements of the electro-thermal response. An Extended Kalman filter is used as a model-based prognostics techniques based on the Bayesian tracking framework. The proposed prognostics technique reports on preliminary work that serves as a case study on the prediction of remaining life of power MOSFETs and builds upon the work presented in [1]. The algorithm considered in this study had been used as prognostics algorithm in different applications and is regarded as suitable candidate for component level prognostics. This work attempts to further the validation of such algorithm by presenting it with real degradation data including measurements from real sensors, which include all the complications (noise, bias, etc.) that are regularly not captured on simulated degradation data. The algorithm is developed and tested on the accelerated aging test timescale. In real world operation, the timescale of the degradation process and therefore the RUL predictions will be considerable larger. It is hypothesized that even though the timescale will be larger, it remains constant through the degradation process and the algorithm and model would still apply under the slower degradation process. By using accelerated aging data with actual device measurements and real sensors (no simulated behavior), we are attempting to assess how such algorithm behaves under realistic conditions.

Power MOSFET PHM↗

NASA NTRS1982

Sub-Kelvin temperatures in space

It is pointed out that the use of temperatures below 1 K in space would provide a significant improvement in several areas of research. The sensitivity of bolometers, for instance, can be improvead by as much as a factor of 50, if the operating temperature is lowered from 1.5 K to 0.3 K. A decrease in temperature to 0.1 K can provide even an improvement up to three orders of magnitude. Detectors based on the utilization of such improvements could be employed for far-infrared (100-1000 microns) photometry and spectroscopy in the low-background conditions of space. The study of critical phenomena in He-3/He-4 mixtures is also of interest, taking into account investigations at the tricritical point (0.87 K), which represents the junction of a first-order and a second-order transition. Tests in space are needed because gravity-related effects make adequate tests on earth impossible. He-3 refrigeration can be used to attain temperatures below 1 K. Adiabatic demagnetization can produuce temperatures below 0.3 K.

Kittel, P.↗

NASA NTRS1995

An efficient and accurate model of the coax cable feeding structure for FEM simulations

An efficient and accurate coax cable feed model is proposed for microstrip or cavity-backed patch antennas in the context of a hybrid finite element method (FEM). A TEM mode at the cavity-cable junction is assumed for the FEM truncation and system excitation. Of importance in this implementation is that the cavity unknowns are related to the model fields by enforcing an equipotential condition rather than field continuity. This scheme proved quite accurate and may be applied to other decomposed systems as a connectivity constraint. Comparisons of our predictions with input impedance measurements are presented and demonstrate the substantially improved accuracy of the proposed model.

Gong, Jian↗

DOE OSTI2022

Statistical Performance Analysis on Approximately 320 Perovskite Single- and Two-Junction Solar Cells and Modules from >30 Global Sources

As perovskite photovoltaics (PV) advance from the laboratory to commercial prototypes, their accurate and reliable performance testing is becoming increasingly important. The well documented dynamic response of perovskite solar cells to an external applied voltage has led to the development of steady-state performance measurement methods; however, these methods have not been widely adopted by the perovskite PV community. A key reason for this is that steady-state measurement methods take tens of minutes to complete, as opposed to conventional "fast" current-voltage (I-V) measurements usually lasting a few seconds. Fast I-Vs arise from a snapshot, almost always not a steady-state condition of the device; however, given their widespread use, the question arises: how do performance parameters of perovskite PV compare when measured with fast I-V and with a steady-state method? We compile results from ca. 320 perovskite PV cells and modules, including single junction, and two-terminal perovskite-perovskite and perovskite-Si tandems, and show that fast I-Vs can provide a useful measure of the open-circuit voltage of the devices, while the short-circuit current and the overall efficiency can be widely misestimated. We discuss implications of these findings on performance testing protocols and propose possible options for fast and accurate testing of perovskite PV.

asymptotic↗

NASA NTRS1982

Changes in osteoblastic activity due to simulated weightless conditions

Using histochemistry and electron microscopy, the reduced bone formation which occurs in the hypokinetic, orthostatically treated adult rat has been studied. The two major changes noted occurred in the osteoblast population, indicated by a reduced alkaline phosphatase activity and reduced numbers of gap junctions between cells. These results were most noticeable in the periosteum and endosteum of the long bones. Changes in osteoblasts lining the surface of trabecular bone were not as evident. These results indicate that the cells lining the surfaces of weight bearing bones are most affected by hypokinesia and this reduction in cellular activity may be a mechanically induced effect.

Doty, S. B.↗

DOE OSTI2022

All-perovskite tandem solar cells with improved grain surface passivation

All-perovskite tandem solar cells hold the promise of surpassing the efficiency limits of single-junction solar cells; however, until now, the best-performing all-perovskite tandem solar cells have exhibited lower certified efficiency than have single-junction perovskite solar cells. A thick mixed Pb–Sn narrow-bandgap subcell is needed to achieve high photocurrent density in tandem solar cells, yet this is challenging owing to the short carrier diffusion length within Pb–Sn perovskites. Here we develop ammonium-cation-passivated Pb–Sn perovskites with long diffusion lengths, enabling subcells that have an absorber thickness of approximately 1.2 μm. Molecular dynamics simulations indicate that widely used phenethylammonium cations are only partially adsorbed on the surface defective sites at perovskite crystallization temperatures. The passivator adsorption is predicted to be enhanced using 4-trifluoromethyl-phenylammonium (CF3-PA), which exhibits a stronger perovskite surface-passivator interaction than does phenethylammonium. By adding a small amount of CF3-PA into the precursor solution, we increase the carrier diffusion length within Pb–Sn perovskites twofold, to over 5 μm, and increase the efficiency of Pb–Sn perovskite solar cells to over 22%. Here, we report a certified efficiency of 26.4% in all-perovskite tandem solar cells, which exceeds that of the best-performing single-junction perovskite solar cells. Encapsulated tandem devices retain more than 90% of their initial performance after 600 h of operation at the maximum power point under 1 Sun illumination in ambient conditions.

14 SOLAR ENERGY↗

NASA NTRS1972

Development of GaAs solar cells

Calculations of GaAs solar cell output parameters were refined and a computer model was developed for parameter optimization. The results were analyzed to determine the material characteristics required for a high efficiency solar cell. Calculated efficiencies for a P/N cell polarity are higher than an N/P cell. Both cell polarities show efficiency to have a larger dependence on short circuit current than an open circuit voltage under nearly all conditions considered. The tolerances and requirements of a cell fabrication process are more critical for an N/P type than for a P/N type cell. Several solar cell fabrication considerations relative to junction formation using ion implantation are also discussed.

Mcnally, P. J.↗

NASA NTRS1989

Design, development and applications of novel techniques for studying surface mechanical properties

Research is reviewed for the adhesion, friction, and micromechanical properties of materials and examples of the results presented. The ceramic and metallic materials studied include silicon carbide, aluminum oxide, and iron-base amorphous alloys. The design and operation of a torsion balance adapted for study of adhesion from the Cavendish balance are discussed first. The pull-off force (adhesion) and shear force (friction) required to break the interfacial junctions between contacting surfaces of the materials were examined at various temperatures in a vacuum. The surface chemistry of the materials was analyzed by X-ray photoelectron spectroscopy. Properties and environmental conditions of the surface regions which affect adhesion and friction-such as surface segregation, composition, crystal structure, surface chemistry, and temperature were also studied.

Miyoshi, Kazuhisa↗

NASA NTRS1993

Cryogenic measurements of aerojet GaAs n-JFETs

The spectral noise characteristics of Aerojet gallium arsenide (GaAs) junction field effect transistors (JFET's) have been investigated down to liquid-helium temperatures. Noise characterization was performed with the field effect transistor (FET) in the floating-gate mode, in the grounded-gate mode to determine the lowest noise readings possible, and with an extrinsic silicon photodetector at various detector bias voltages to determine optimum operating conditions. The measurements indicate that the Aerojet GaAs JFET is a quiet and stable device at liquid helium temperatures. Hence, it can be considered a readout line driver or infrared detector preamplifier as well as a host of other cryogenic applications. Its noise performance is superior to silicon (Si) metal oxide semiconductor field effect transistor (MOSFET's) operating at liquid helium temperatures, and is equal to the best Si n channel junction field effect transistor (n-JFET's) operating at 300 K.

Goebel, John H.↗

DOE OSTI2022

Nucleation of Grain Boundary Phases

Here, we derive a theory that describes homogeneous nucleation of grain boundary (GB) phases. Our analysis takes account of the energy resulting from the GB phase junction, the line defect separating two different GB structures, which is necessarily a dislocation as well as an elastic line force due to the jump in GB stresses. The theory provides analytic forms for the elastic interactions and the core energy of the GB phase junction that, along with the change in GB energy, determines the nucleation barrier. We apply the resulting nucleation model to simulations of GB phase transformations in tungsten. Our theory explains why under certain conditions GBs cannot spontaneously change their structure even to a lower energy state.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Highly Integrated Wide Bandgap Power Module for Next Generation Plug-In Vehicles (Final Report)

Wide bandgap devices are key enablers for high power density traction inverters. A highly integrated wide bandgap (WBG) power module enables higher temperature operation, higher inverter efficiency and overall smaller die area with the same power delivery. However, it requires careful design of the power module to take advantage of all the superior material properties that silicon carbide (SiC) provides over conventional silicon (Si) Insulated Gate Bipolar Transistor (IGBT) based design. This project developed an efficient and densely packed SiC power module for an automotive traction inverter application. Extensive study was performed to select the best performing SiC die considering a wide range of temperature variation, suitability to integrate into target packaging, robust body diode performance and overall high electrical efficiency. Multiple design ideas were explored to achieve lower stray inductance for both power loop and signal loop, uniform current distribution, compact form factor, and very high thermal performance. The final power module package includes all six inverter switches in the same module (six-pack) with die sintered at both bottom and top surfaces utilizing high performance substrate to achieve high electrical and thermal performance. Two power module variants were developed using 900 V and 1200 V devices for operating at two different high voltage levels (> 600 V HV battery). Both power modules were comprehensively characterized, and high efficiency operation of the inverter was confirmed through analysis. Finally, a complete functional inverter was built with the 1200V power modules using other essential components (HV capacitors, gate driver board, controller board, current sensor, connectors etc.) and tested using GM’s standard test procedure. There are several challenges associated with adopting WBG devices for high voltage operation. In order to assess and mitigate those challenges, GM and subrecipients of this project have conducted multiple detailed studies. This includes phase current reconstruction using integrated Rogowski coil, device junction temperature estimation using on-state gate resistance, modeling and testing the effect of high voltage and fast switching on motor insulation and bearings, partial discharge inception voltage measurement under different environmental conditions. Findings of all these studies are summarized in this report.

33 ADVANCED PROPULSION SYSTEMS↗

DOE OSTI2022

Discovery of multimechanisms of screw dislocation interaction in bcc iron from open-ended saddle point searches

Dislocation motion and interactions determine mechanical properties in body-centered cubic (bcc) metallic materials. However, studying mechanisms for the screw dislocation interaction is fundamentally challenging since many underlying processes involve mesotimescales and atomistic resolution, currently inaccessible by either experimental techniques or continuum theoretical methods. Here, in this paper, we develop a computational capability based on self-evolving atomistic kinetic Monte Carlo (SEAKMC) to sample the critical events and saddle point energies related to screw dislocations and their junctions. The method is first validated by calculating the stress dependence of Peierls barriers and formation energies of kink pairs and cross-slip kink pairs on a single screw dislocation in bcc iron. Then the method is applied to a binary junction of a pair of intersecting screw dislocations, the structure of which is crucial for low-temperature plastic deformation. We identify three important mechanisms: coplanar cross-slipping, jog-pinning, and a previously unknown unzipping mechanism during the evolution of the binary junction. The mechanisms are then further validated using classical molecular dynamics simulations. The computational capability developed in this paper provides an effective tool to evaluate screw dislocation related thermally activated events in complex stress conditions. The mechanisms discovered in this paper provide critical insights into temperature dependence of the anomalous slip, a breakdown of the Schmidt law, during the plastic deformation in bcc iron and can be generalized to other bcc metals.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Passivated Contacts for Direct Wafer Product (Final Technical Report)

This TCF project developed a thin-oxide (SiO 2 )/polycrystalline silicon (poly-Si) passivated contact solar cell on CubicPV's (formally 1366 Technologies, Inc.) Direct Wafer® Product (DWP) kerfless wafers. The project used two NREL-developed technologies described in U.S. Patent No. 9,911,873, Hydrogenation of Passivated Contacts and U.S. Patent Application Serial No. 15/890,172, Doped Passivated Contacts . The project was motivated by a potential higher efficiency cell (compared to a PERC cell) using passivated contacts on the ultra-low cost kerfless wafers grown using the Direct Wafer process. The hope was to accelerate market adoption of the cell and wafer by delivering the lowest LCOE in the PV industry. The project tested both n-type and p-type SiO 2 /poly-Si passivated contacts grown by thermal oxidation and plasma enhanced chemical vapor deposition (PECVD) of the poly-Si layer on DWP with varying wafer resistivities. Both deposition techniques are industry standards and thus economically viable methods for commercializing the contacts. The results indicated that both n-type and p-type poly-Si passivated contacts can be formed on polycrystalline DWP wafers, but implied open-circuit voltages (i Voc ) were limited to below 0.65 mV (compared with ~ 730 mV on n-Cz wafers). Diffusion of H to the Si/SiO 2 /poly-Si interface was key to obtaining high i Voc values. In this study, H was diffused from a high-temperature SiN x layer deposited over the poly-Si layer during a high-temperature firing step, similar to one used for screen printed metals. The study concluded that poly-Si passivated contacts on DWP wafers passivated the surface of the wafers as well as PERC passivated surfaces, which use a less expensive dielectric layer stack. The project showed that Direct Wafer Product wafers grown by CubicPV could produce high i Voc values (~0.647 mV), which could produce a cell over 20% efficient with proper processing and metallization. These cells, though not economically viable in 2024 as a stand-alone cell, could be integrated with a wide-bandgap top solar cell to form a two-junction tandem cell that could be viable under certain circumstances. This is because the bottom cell of a 30%, two-terminal tandem only needs to be a 20% cell under one-sun conditions. Thus, the DWP could be an ideal low-cost wafer for tandems. The project also revealed that a TOPCon type cell could be formed on a p-type DWP wafer using a P-diffused emitter and a p-type poly-Si contact. In fact, the p-type version of the poly-Si contact out-performed the n-type version for a variety of wafer resistivities, from highly doped to lowly doped. This curiosity requires more work to understand because on Cz wafers, the n-type poly-Si contact is of much higher quality than the p-type version.

14 SOLAR ENERGY↗

DOE OSTI2025

Early Stages in the Lifecycle of Polar Liquid-Bearing Clouds

Stratiform liquid-bearing clouds are ubiquitous over the polar regions, where they are predominantly mixed-phase. These polar clouds induce substantial radiative forcing on the surface and continuously modify the atmospheric thermodynamic budget, with direct implications for the polar ice pack resilience. However, the physical representation of these clouds is still a major challenge for climate models. A significant part of polar liquid-bearing cloud lifecycle is often manifested in a quasi-steady self-sustaining, persistent, and turbulent state, which is driven by longwave cloud radiative cooling and can last for multiple days. This self-sustaining cloud lifecycle stage has been thoroughly investigated in numerous studies, though some of its aspects such as precipitation still lack robust quantification and evaluation. The preceding cloud lifecycle stages, which may last up to several hours, have nonetheless remained widely overlooked. These preceding stages initiate at cloud formation, often in a stable and non-turbulent atmospheric layer and serve as a key junction between cloud persistence and cloud dissipation. These two contrasting cloud lifecycle trajectories pose the question if general circulation models (GCMs) can capture the full lifecycle accurately for the real physical reasons, a necessary condition to improve our confidence in climate projections given the changing polar climate. The purpose of this project was to improve the characterization and understanding of these early stages in the lifecycle of polar stratiform liquid-bearing cloud and to aid their representation in GCMs. This research relied on measurements from the Multidisciplinary drifting Observatory for the Study of Arctic Climate (MOSAiC) field campaign, as well as the observations from the ARM West Antarctic Radiation Experiment (AWARE) and the permanent ARM site at Utqiagvik, North Slope of Alaska (NSA).

58 GEOSCIENCES↗

NASA NTRS1991

Investigation of anodic and chemical oxides grown on p-type InP with applications to surface passivation for n(+)-p solar cell fabrication

Most of the previously reported InP anodic oxides were grown on a n-type InP with applications to fabrication of MISFET structures and were described as a mixture of In2O3 and P2O5 stoichiometric compounds or nonstoichiometric phases which have properties similar to crystalline compounds In(OH)3, InPO4, and In(PO3)3. Details of the compositional change of the anodic oxides grown under different anodization conditions were previously reported. The use of P-rich oxides grown either by anodic or chemical oxidation are investigated for surface passivation of p-type InP and as a protective cap during junction formation by closed-ampoule sulfur diffusion. The investigation is based on but not limited to correlations between PL intensity and X-ray photoelectron spectroscopy (XPS) chemical composition data.

Faur, Maria↗

NASA NTRS1992

Parallel arrays of Josephson junctions for submillimeter local oscillators

In this paper we discuss the influence of the DC biasing circuit on operation of parallel biased quasioptical Josephson junction oscillator arrays. Because of nonuniform distribution of the DC biasing current along the length of the bias lines, there is a nonuniform distribution of magnetic flux in superconducting loops connecting every two junctions of the array. These DC self-field effects determine the state of the array. We present analysis and time-domain numerical simulations of these states for four biasing configurations. We find conditions for the in-phase states with maximum power output. We compare arrays with small and large inductances and determine the low inductance limit for nearly-in-phase array operation. We show how arrays can be steered in H-plane using the externally applied DC magnetic field.

Pance, Aleksandar↗

DOE OSTI2024

Phase-Slip Lines and Anomalous Josephson Effects in Tungsten Nanoscale Cluster-Based Topological Insulator Nanobridges: Implications for Topologically Protected Qubits and Quantum Sensors

Superconducting topological systems formed by a strong 3D topological insulator (TI) in proximity to a conventional s-wave superconductor (SC) have been intensely studied, as they may host Majorana zero modes. However, there are limited experimental realizations of TI-SC systems in which robust superconducting pairing is induced on the surface states of the TI and a topological superconducting state is established. Here, we fabricate a TI-SC system by depositing, via a focused ion beam, tungsten (W) nanoscale clusters on the surface of TI Bi 0.91 Sb 0.09 . We find that the resulting heterostructure supports phase-slip lines (PSLs) that act as effective Josephson junctions (JJs). Here, we probe the response of the system to microwave radiation. We find that for some ac frequencies, and powers, the resulting Shapiro steps’ structure of the voltage–current characteristic exhibits a missing first step and an unexpectedly wide second Shapiro step. The theoretical analysis of the measurements shows that the unusual Shapiro response arises from the interplay between a static JJ and a dynamic one and allows us to identify the conditions under which the missing first step can be attributed to the topological nature of the JJs formed by the PSLs. Our results suggest an approach to induce superconductivity in a TI, a route to realizing highly transparent topological JJs, and show how the response of superconducting systems to microwave radiation can be used to infer the dynamics of PSLs. Highly transparent topological junctions are promising candidates to realize vector field sensors with very high sensitivity. In addition, due to the nontrivial Berry phase of the TI’s surface states such junctions can be in a topological state which is ideal to create topologically protected qubits.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2022

Evaluation of an LED Simulator for Single- and Multi-Junction PV Cell Performance Testing

We present the evaluation of a solar simulator comprising a Light Emitting Diode (LED) array as its light source. While multiple applications can be envisioned for such a light source, here we focus on its use for performance testing of solar cells at Standard Test Conditions. With this in mind, we present characterization of the spatial uniformity of the irradiance and its temporal stability as well as the spectral range and spectral class. For a multisource simulator, the spectral uniformity across the test plane should also be evaluated and we discuss a method for performing this evaluation that is well suited to a solar cell performance testing application. One major advantage of this simulator is the ability to easily adjust the spectral output as needed in multijunction PV cell measurements and we also discuss this application here.

LED↗