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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12

Interface states and internal photoemission in p-type GaAs metal-oxide-semiconductor surfaces

An interface photodischarge study of p-type GaAs metal-oxide-semiconductor (MOS) structures revealed the presence of deep interface states and shallow donors and acceptors which were previously observed in n-type GaAs MOS through sub-band-gap photoionization transitions. For higher photon energies, internal photoemission was observed, i.e., injection of electrons to the conduction band of the oxide from either the metal (Au) or from the GaAs valence band; the threshold energies were found to be 3.25 and 3.7 + or - 0.1 eV, respectively. The measured photoemission current exhibited a thermal activation energy of about 0.06 eV, which is consistent with a hopping mechanism of electron transport in the oxide.

Kashkarov, P. K.↗

Modulating physicochemical interfaces enables li-rich oxides based ceramic solid-state li batteries under ambient conditions

Li-rich layered oxides exhibit promising potential applications in high-energy-density solid-state lithium metal batteries. Nevertheless, the strong oxidative oxygen species generate at high voltage, which poses great challenges to positive electrode-side interface stability. Herein, a robust in-situ polymerization gel polymer electrolyte with bifunctional additives is designed for interface modification. These additives, include lithium difluoro(oxalate) borate and LiPO 2 F 2 , regulate the Li + chemical environment in gel polymer electrolyte to enhance crosslink density without residual oligomer, which reduce gas generation and suppress contact loss, thus avoiding interfacial impedance divergence. Concurrently, the designed gel polymer electrolyte enables a wide electrochemical stability window (up to 4.7 V) and a high Li + transference number (0.82). Additionally, the additives induced F- and B-rich inorganic cathode-electrolyte interphase inhibits side reactions and oxygen/transition metal loss effectively, stabilizing the chemical interface. The as-constructed Li-rich layered oxides-based ceramic solid-state lithium metal batteries with gel polymer electrolyte interface modification exert a high discharge capacity of 276.5 mAh g -1 at 30 °C without external pressure, delivering a retention of 81.7% after 100 cycles at 25 mA g -1 during 2.0-4.7 V. This work provides a guideline for developing high-voltage solid-state lithium metal batteries via interfacial design.

Hu, Xinchao [Xiamen University (China)]↗

Local atomic and electronic structure of oxide/GaAs and SiO2/Si interfaces using high-resolution XPS

The chemical structures of thin SiO2 films, thin native oxides of GaAs (20-30 A), and the respective oxide-semiconductor interfaces, have been investigated using high-resolution X-ray photoelectron spectroscopy. Depth profiles of these structures have been obtained using argon ion bombardment and wet chemical etching techniques. The chemical destruction induced by the ion profiling method is shown by direct comparison of these methods for identical samples. Fourier transform data-reduction methods based on linear prediction with maximum entropy constraints are used to analyze the discrete structure in oxides and substrates. This discrete structure is interpreted by means of a structure-induced charge-transfer model.

Grunthaner, F. J.↗

Deciphering atomistic mechanisms of the gas-solid interfacial reaction during alloy oxidation

Gas-solid interfacial reaction is critical to many technological applications from heterogeneous catalysis to stress corrosion cracking. A prominent question that remains unclear is how gas and solid interact beyond chemisorption to form a stable interphase for bridging subsequent gas-solid reactions. Here, we report real-time atomic-scale observations of Ni-Al alloy oxidation reaction from initial surface adsorption to interfacial reaction into the bulk. We found distinct atomistic mechanisms for oxide growth in O 2 and H 2 O vapor, featuring a “step-edge” mechanism with severe interfacial strain in O 2 , and a “subsurface” one in H 2 O. Ab initio density functional theory simulations rationalize the H 2 O dissociation to favor the formation of a disordered oxide, which promotes ion diffusion to the oxide-metal interface and leads to an eased interfacial strain, therefore enhancing inward oxidation. Our findings depict a complete pathway for the Ni-Al surface oxidation reaction and delineate the delicate coupling of chemomechanical effect on gas-solid interactions.

36 MATERIALS SCIENCE↗

Chemical Analysis of Tantalum Thin Films compared to Niobium Thin Films using SIMS and XPS

Superconducting qubits are a leading platform for quantum computation. These circuits are typically made from superconducting materials like aluminum or niobium. However, the amorphous niobium oxide and aluminum oxide on the surface of these circuits introduce considerable RF loss due to the presence of two-level systems (TLS), which limits the maximum coherence times T1 to ~100 μs. Capping the niobium qubits with a tantalum layer leads to a 3- 5x improvement [Bal et al., 2024]. But even in this case, tantalum forms an amorphous surface oxide that introduces loss. In an effort to devise strategies to eliminate the presence of this oxide, we present a comprehensive study on the nature of Ta oxide using x-ray photoemission spectroscopy (XPS) and secondary ion mass spectrometry (ToF-SIMS) as a function of heat treatment. The thin films were annealed in ultra-high vacuum conditions and analyzed in situ to characterize the composition and evolution of the native tantalum oxide layer and oxide-metal interface. Our analysis reveals two critical differences between tantalum and niobium oxides: Nb2O5 completely dissolves at 400°C, while Ta2O5 persists even at 800°C. Additionally, tantalum oxide contains only a single suboxide (TaO), in contrast to niobium's two suboxides (NbO and NbO2). The suboxide of tantalum contributes minimally to the total oxide content and shows a relative increase with temperature. Understanding the oxide’s behavior will open new pathways for optimizing coherence times in tantalum qubits.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Diffusional transport during the cyclic oxidation of gamma + beta, Ni-Cr-Al(Y, Zr) alloys

The cyclic oxidation behavior of several cast gamma + beta, Ni-Cr-Al(Y, Zr) alloys and one low-pressure plasma spraying gamma + beta, Ni-Co-Cr-Al(Y) alloy was studied. Cyclic oxidation was found to result in a decreasing Al concentration at the oxide-metal interface due to a high rate of Al consumption coupled with oxide scale cracking and spalling. Diffusion paths plotted on the ternary phase diagram showed higher Ni concentrations with increasing cyclic oxidation exposures. The alloy with the highest rate of Al consumption and the highest Al content underwent breakaway oxidation following 500 1-hr cycles at 1200 C.

Nesbitt, J. A.↗

Protective role of silicon in the high-temperature oxidation of titanium

We investigated the oxidation of pure titanium and Ti-0.8 at.% Si at 800 ° C in Ar-O 2 and O 2 to clarify how dilute silicon additions enhance the oxidation resistance of titanium. The effect of silicon stemmed from differences in oxide growth rather than oxygen dissolution in the metal. Initially, silicon reduced outward oxide growth and completely eliminated inward growth, which we attributed to the continuous Ti 5 Si 3 layer formed at the oxide-metal interface. Furthermore, after breakdown of the Ti 5 Si 3 layer, the oxide — containing silicon — became lamellar but remained more compact and possibly slower growing than the oxide on pure titanium.

36 MATERIALS SCIENCE↗

Structure of the electrical double layer at the ice–water interface

The surface of ice in contact with water contains sites that undergo deprotonation and protonation and can act as adsorption sites for aqueous ions. Therefore, an electrical double layer should form at this interface and existing models for describing the electrical double layer at metal oxide–water interfaces should be able to be modified to describe the surface charge, surface potential, and ionic occupancy at the ice–water interface. I used a surface complexation model along with literature measurements of the zeta potential of ice in brines of various strength and pH to constrain equilibrium constants. I then made predictions of ion site occupancy, surface charge density, and partitioning of counterions between the Stern and diffuse layers. The equilibrium constant for cation adsorption is more than 5 orders of magnitude larger than the other constants, indicating that this reaction dominates even at low salinity. Deprotonated OH sites are predicted to be slightly more abundant than dangling O sites, consistent with previous work. Surface charge densities are on the order of ±0.001 C/m2 and are always negative at the moderate pH values of interest to atmospheric and geophysical applications (6–9). In this pH range, over 99% of the counterions are contained in the Stern layer. This suggests that diffuse layer polarization will not occur because the ionic concentrations in the diffuse layer are nearly identical to those in the bulk electrolyte and that electrical conduction and polarization in the Stern layer will be negligible due to reduced ion mobility.

Daigle, Hugh (ORCID:0000000260628321)↗

Developments toward an 18% efficient silicon solar cell

Limitations to increased open-circuit voltage were identified and experimentally verified for 0.1 ohm-cm solar cells with heavily doped emitters. After major reduction in the dark current contribution from the metal-silicon interface of the grid contacts, the surface recombination velocity of the oxide-silicon interface of shallow junction solar cells is the limiting factor. In deep junction solar cells, where the junction field does not aid surface collection, the emitter bulk is the limiting factor. Singly-diffused, shallow junction cells have been fabricated with open circuit voltages in excess of 645 mV. Double-diffusion shallow and deep junctions cells have displayed voltages above 650 mV. MIS solar cells formed on 0.1 ohm-cm substrates have exibited the lowest dark currents produced in the course of the contract work.

Meulenberg, A., Jr.↗

Oxidation characteristics of Ti-25Al-10Nb-3V-1Mo intermetallic alloy

Static oxidation kinetics of the super-alpha 2 titanium-aluminide alloy Ti-25Al-10Nb-3V-1Mo (at. percent) were investigated in air over the temperature range of 650 to 1000 C using thermogravimetric analysis. The oxidation kinetics were complex at all exposure temperatures and displayed up to three distinct oxidation rates. Breakaway oxidation occurred after long exposure times at high temperatures. Oxidation products were determined using x ray diffraction techniques, electron microprobe analysis, and energy dispersive x ray analysis. Oxide scale morphology was examined by scanning electron microscopy of the surfaces and cross sections of oxidized specimens. The oxides during the parabolic stages were compact and multilayered, consisting primarily of TiO2 doped with Nb, a top layer of Al2O3, and a thin bottom layer of TiN. The transition between the second and third parabolic stage was found to be linked to the formation of a TiAl layer at the oxide-metal interface. Porosity was formed during the third stage, causing degradation of the oxide and the beginning of breakaway oxidation.

Wallace, Terryl A.↗

Oxidation characteristics of Ti-25Al-10Nb-3V-1Mo

Static oxidation kinetics of the super-alpha 2 titanium-aluminide alloy Ti-25Al-10Nb-3V-1Mo (at. percent) were investigated in air over the temperature range of 650 to 1000 C using thermogravimetric analysis. The oxidation kinetics were complex at all exposure temperatures and displayed up to three distinct oxidation rates. Breakaway oxidation occurred after long exposure times at high temperatures. Oxidation products were determined using X-ray diffraction techniques, electron microprobe analysis, and energy dispersive X-ray analysis. Oxide scale morphology was examined by scanning electron microscopy of the surfaces and cross sections of oxidized specimens. The oxides during the parabolic stages were compact and multilayered, consisting primarily of TiO2 doped with Nb, a top layer of Al2O3, and a thin bottom layer of TiN. The transition between the second and third parabolic stage was found to be linked to the formation of a TiAl layer at the oxide-metal interface. Porosity was formed during the third stage, causing degradation of the oxide and the beginning of breakaway oxidation.

Wallace, T. A.↗

Novel inverse oxide/metal catalysts for methanol synthesis: impact of oxide–metal interactions and reversible morphological changes

Inverse oxide/metal catalysts have proved to be excellent systems for the generation of methanol by CO 2 hydrogenation or the partial oxidation of methane. These systems can exhibit unique structural and chemical properties due to the nano size of the oxide component and strong oxide–metal interactions. Recent studies for ZnO/Cu, CeO 2 /Cu, TiO 2/ Cu, MgO/Cu, In 2 O 3 /Cu, and In 2 O 3 /Au catalysts have shown large variations in the composition and morphology of the oxide overlayer as a function of temperature and chemical environment. These oxide–metal interfaces are able to react with CO 2 and CH 4 at room temperature, and both reactants have a strong influence on the physical and chemical properties of the catalysts. Under reaction conditions, switches between oxide–metal and metal–metal interfaces can take in the catalyst surface. A dynamic behavior that can be linked to a high selectivity for methanol production over systems such as ZnO/Cu, CeO 2 /Cu and In 2 O 3 /Au. Finally, this type of correlation deserves additional systematic studies since it could be a powerful tool for designing highly efficient catalysts for methanol synthesis.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Structure Prediction of Ionic Epitaxial Interfaces with Ogre Demonstrated for Colloidal Heterostructures of Lead Halide Perovskites

Colloidal epitaxial heterostructures are nanoparticles composed of two different materials connected at an interface, which can exhibit properties different from those of their individual components. Combining dissimilar materials offers exciting opportunities to create a wide variety of functional heterostructures. However, assessing structural compatibility–the main prerequisite for epitaxial growth–is challenging when pairing complex materials with different lattice parameters and crystal structures. This complicates both the selection of target heterostructures for synthesis and the assignment of interface models when new heterostructures are obtained. Here, we demonstrate Ogre as a powerful tool to accelerate the design and characterization of colloidal heterostructures. To this end, we implemented developments tailored for the high-efficiency prediction of epitaxial interfaces between ionic/polar materials, which encompass most colloidal semiconductors. These include the use of pre-screening candidate models based on charge balance at the interface and the use of a classical potential for fast energy evaluations, with parameters automatically calculated based on the input bulk structures. These developments are validated for perovskite-based CsPbBr 3 /Pb 4 S 3 Br 2 heterostructures, where Ogre produces interface models in excellent agreement with density functional theory and experiments. Furthermore, we use Ogre to rationalize the templating effect of CsPbCl 3 on the growth of lead sulfochlorides, where perovskite seeds induce the formation of Pb 4 S 3 Cl 2 rather than Pb 3 S 2 Cl 2 due to better epitaxial compatibility. Finally, combining Ogre simulations with experimental data enables us to unravel the structure and composition of the hitherto unsolved CsPbBr 3 /Bi x Pb y S z interface, and to assign a structure to several other reported metal halide- and oxide-based interfaces. The Ogre package is available on GitHub or via the OgreInterface desktop application, available for Windows, Linux, and Mac.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Investigating the Adsorption–Desorption Kinetics of a Molecular Water Oxidation Catalyst at an Electrode Interface

Probing the dynamics of molecular catalysts at electrode–electrolyte interfaces is essential for understanding catalytic mechanisms. Structure-specific spectroscopic methods are particularly powerful for examining electrocatalytic interfaces but are mostly used under steady-state conditions. Herein, we combined surface-enhanced infrared absorption spectroscopy (SEIRAS) with phase-sensitive detection (PSD) to investigate the dynamics of a molecular Ir-based water oxidation catalyst at the Au–electrolyte interface. We found that the amplitude of the absorbance of the catalyst is anticorrelated to that of interfacial water. This anticorrelation can be understood by the adsorption of the electrooxidized catalyst on the electrode and concurrent displacement of interfacial water. The infrared signals from the interface exhibit an increasing phase lag with respect to the electrode potential with an increasing scan rate of the potential. Kinetic modeling suggests that the potential-dependent adsorption–desorption kinetics of the molecular catalyst on the electrode gives rise to this phase lag. Furthermore, this study shows that PSD-SEIRAS is a powerful tool for investigating the interfacial dynamics of electrocatalytic systems.

Catalysts↗

A measure of active interfaces in supported catalysts for high-temperature reactions

Formulating knowledge of structure-function relationships in heterogeneous catalysis is central to the design of efficient catalysts; yet, the elucidation of dominant reaction sites has remained as a challenge. Here, in this paper, we present a methodology that can be used to visualize metal-gas and metal-oxide-gas interfaces in three dimensions and to quantify their catalytic activity levels. As a case study, CH 4 oxidation occurring in a Pt/CeO 2 system is chosen. By employing thermally robust Pt@CeO 2 model catalysts with size-tunable and monodisperse cores, and gas-permeable shells, we reconstruct a series of structures in 3D via electron tomography and match the information to activity data and theoretical calculations. This strategy reveals that two different interfaces catalyze the CH 4 oxidation and that their contribution to the overall rate changes with the Pt size, temperature, and gas atmosphere. Our results provide an analytic platform on which to explore reaction pathways and mechanisms applicable to multiple reactions and materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Elucidating the impact of stress states on grain boundary passivation in Ni-5Cr using the Rhines pack method

The oxidation behavior of a Ni–5Cr (at.%) alloy was evaluated at 420 ° C using the Rhines pack method and simultaneous tensile and compressive stress states via a miniature four-point bending fixture. At this moderate temperature, grain boundaries dominate mass transport and the resulting oxidation response. Oxidation produced approximately 1μ⁢m-wide protective Cr 2 O 3 films capping some grain boundaries and penetrative, intergranular Cr-rich oxides at other grain boundaries. Externally applied tensile and compressive stress during oxidation increased the prevalence of Cr 2 O 3 cap formation compared to no applied stress, with tensile stress resulting in more Cr 2 O 3 caps than compressive stress. The observed oxide cap morphology was similar across all test conditions. Regions under compressive stress showed an order of magnitude greater Cr depletion depth along the grain boundary. Chromium nitrides (CrN), likely from N contamination of the Rhines pack cell, were observed both at the oxide–metal interface and intergranularly within the alloy. Collectively these results demonstrate that applied stress promotes localized protective oxide cap formation over grain boundaries, with compressive stress additionally promoting deeper Cr depletion. Furthermore the experimental approach helped separate out the effects of stress on local oxide formation and grain boundary passivation.

4 point bend↗