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Results for “passivation layers”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Demonstration of Passivation Using a Low-Temperature-Grown, Al-Containing Window Layer by HVPE

We present hydride vapor phase epitaxy (HVPE) growth of single junction GaAs solar cells with Al0.4Ga0.6As front passivation layers at a growth temperature of 650°C. Devices achieved a short circuit current density of ~27.52 mA/cm2 after anti-reflection coating, similar to devices that used GaInP windows with the same bandgap, indicating that AlGaAs provides front-surface passivation resulting in a low interface recombination velocity. The low temperature growth of Al containing III-V materials by HVPE allows for compatibility with In-containing alloys in high-efficiency III-V device structures for various applications.

41 EE - Solar Energy Technologies Office (EE-4S)↗
NASA NTRS1983

Studies of sidewall boundary layer in the Langley 0.3 meter transonic cryogenic tunnel with and without suction

Boundary layer measurements on the sidewalls of the Langley 0.3 Meter Transonic Cryogenic Tunnel were made to determine the effectiveness of the passive boundary layer bleed system over a Reynolds number range from 20 to 200 x 10 to the sixth power per meter at Mach numbers from 0.30 to 0.76. The tunnel sidewall boundary layer displacement thickness was about 2 percent of the width of the test section without the boundary layer bleed. Measured velocity profiles correlated well with the defect law of Hama. With the boundary layer bleed equivalent to about 2 percent of the test section mass flow, the boundary layer displacement thickness reduced to about 1 percent of the test section width, which is generally considered acceptable for testing airfoils. It was also noticed that effectiveness of the bleed was nearly independent of the Mach number and Reynolds number over the range of conditions tested. A comparison of the measured suction effectiveness of the bleed with the finite difference and integral methods of boundary layer calculation showed good agreement.

Murthy, A. V.↗
DOE OSTI2024

Double Perovskite Interlayer Stabilized Highly Efficient Perovskite Solar Cells

Metal halide perovskite solar cell (PSC) technology has an impressive power conversion efficiency (PCE) exceeding 26.1% and demonstrates cost-effective manufacturing. However, the stability of these PSCs poses a significant challenge, hindering their widespread manufacturing and commercialization. To tackle the degradation issue inherent in PSCs, surface passivation techniques, particularly employing a thin layer of two-dimensional (2D) perovskites, create a 2D/3D heterostructure. Beyond this, the exploration of metal halide double perovskites adds a new dimension to the chemical and band gap phase space of materials for optoelectronic applications. In this study, we leverage a wide band gap double perovskite interlayer to enhance the stability of 3D metal halide perovskite. Specifically, the double perovskite nanoparticle Cs 2 AgBiBr 6 , with its substantial band gap of 2.2 eV and exceptional air stability, is utilized. Through optimization, a Cs 2 AgBiBr 6 -treated PSC achieves an open-circuit voltage of 1.12 V and an impressive PCE of 19.52%. Additionally, the Cs 2 AgBiBr 6 passivation layer proves to be effective in bolstering the stability of PSCs. This work demonstrates an additional strategy and design motif to simultaneously increase the PCE of PSCs along with achieving improved stability.

14 SOLAR ENERGY↗
DOE OSTI2022

Evaluating Contributions of Pitch-Carbon Coating to Improved Stability of Si Anodes Through Voltage-Resolved Multi-Phase Characterization

Silicon nanoparticles have emerged as a promising alternative to graphite to improve the energy density of next-generation lithium-ion battery anodes. Nano-sized Si domains facilitate rapid ion transport and minimize particle-scale mechanical degradation, but also exhibit increased (electro)chemical reactivity with Li-ion electrolyte components due to their high surface area. We have previously demonstrated that surface modification of Si nanoparticles with pitch-carbon is an effective strategy to reduce these parasitic reactions. In the present work, we holistically evaluate the mechanistic contribution of pitch-carbon coating to the observed stability improvement over uncoated Si. We utilize coupled in situ and ex situ methods to probe changes to solid-surface, volatile headspace, and gas-phase chemistry occurring during initial cycling. Measurements taken at targeted potentials associated with electrolyte species reduction enables the decoupling of specific reaction pathways tied to interfacial stability. Further, we demonstrate the non-trivial role of gas reconsumption in dictating the nature of the passivating surface layer evolved on both uncoated and pitch-coated Si. This multi-phase analysis offers insights into the mechanism of effective surface passivation, which may be applied to inform future Si material development.

ENERGY STORAGE↗
DOE OSTI2020

Oxide structure of air-passivated U-6Nb alloy thin films

U-6Nb is a uranium alloy containing 6 wt% niobium that possesses high corrosion resistance. The structure and composition of the passivating oxide layer formed on air-aged U-6Nb, which gives the material its corrosion resistant properties, was characterized using surface scattering techniques. Stable oxide layers formed on the surface of a set of U-6Nb alloy thin films under ambient conditions were investigated using neutron reflectometry (NR), x-ray reflectometry (XRR) and grazing incidence x-ray diffraction (GIXD). The passivating oxide was composed of approximately 27% U, 5% Nb, and 68% O, primarily consisting of a thin niobium oxide layer (5.5 ± 0.4 nm) separating a thicker UO2 layer (27.1 ± 2.3 nm) from the underlying U-6Nb alloy. A critical density of enriched niobium oxide at the metal-oxide interface is hypothesized to limit oxygen diffusion and confer high corrosion resistance to the alloy.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Nanopinhole-Enabled, Hole-Selective Poly-Si/SioxNy Passivating Contacts on Textured c-Si for Si Solar Cells

The next-generation silicon photovoltaics will be based on passivating electron- and hole-selective contacts with both very low interface recombination and contact resistivities. While the emerging mainstream TOPCon technology has developed excellent electron-selective poly-Si/tunneling SiOx contacts, hole-selective contacts, especially on textured surfaces, have remained a significant challenge. This contribution introduces novel high-performance hole selective poly-Si contacts on pyramid-textured Si, enabled by electrochemically produced hole transport nanopinholes in a 10 nm oxynitride passivating dielectric stack capped by p+ poly-Si. The highly passivating oxynitride layer is produced via atomic intermixing of O and N atoms in the initial SiOx/SiNy layer stack upon thermal annealing. Carrier transport is governed by nanopinhole density and size are tuned by Ag nanoparticle electrodeposition and surface attachment chemistries. This results in passivating hole contact resistivities in the m..omega..-cm2 range, while preserving interface recombination current prefactor around 5 fA/cm2.

14 SOLAR ENERGY↗
DOE OSTI2022

(3-Aminopropyl)trimethoxysilane Surface Passivation Improves Perovskite Solar Cell Performance by Reducing Surface Recombination Velocity

We demonstrate reduced surface recombination velocity (SRV) and enhanced power-conversion efficiency (PCE) in mixed-cation mixed-halide perovskite solar cells by using (3-aminopropyl)trimethoxysilane (APTMS) as a surface passivator. We show the APTMS serves to passivate defects at the perovskite surface, while also decoupling the perovskite from detrimental interactions at the C 60 interface. We measure a SRV of ~125 ± 14 cm/s, and a concomitant increase of ~100 meV in quasi-Fermi level splitting in passivated devices compared to the controls. We use time-resolved photoluminescence and excitation-correlation photoluminescence spectroscopy to show that APTMS passivation effectively suppresses non-radiative recombination. We show that APTMS improves both the fill factor and open-circuit voltage (V OC ), increasing V OC from 1.03 V for control devices to 1.09 V for APTMS-passivated devices, and leads to a PCE increase from 15.90% to 18.03%. Here, we attribute the enhanced performance to reduced defect density resulting in suppressed nonradiative recombination and lower SRV at the perovskite/transport layer interface.

14 SOLAR ENERGY↗
NASA NTRS1998

Modal Analysis of Embedded Passive Damping Materials in Composite Plates with Different Orientations

This report presents an experimental and numerical investigation of the free vibration of cantilevered composite plates with and without passive damping. A total of seven composite material plates are considered. The lay-up sequences for the two plates without damping are [90/90/0/0], and [90/0/90/0]; the other five plates are the same as the first two with two embedded layers of passive damping material. The passive damping material is embedded at different locations in the plate with orientation [90/0/90/0],. The damping material employed is a 3M material (SJ-2015 ISD 112) with peak damping properties in the ambient temperature range (32 F to 140 F). The composite material used is a carbon fiber (977-2)/epoxy resin (IM7). The effect of the passive damping system employed in this study for the composite plates are discussed. Modal testing is performed on these plates to determine resonant frequencies, amplitude and mode shape information. Numerical results are obtained using COSMOS/M software for the plates without damping. The experimental and numerical results are in very good agreement for different laminated plates without damping layers.

Kehoe, Michael↗
DOE OSTI2025

The Chemistry, Formation and Passivation of Solid-Electrolyte Interphase (SEI) from FSI- Breakdown at Li-metal Potential

LiFSI-based liquid electrolytes are promising for realizing high Coulombic efficiency (CE) and long cycle life of next-generation high-energy Li metal battery. Nevertheless, the fundamentals of both the chemistry and formation of solid-electrolyte interphase (SEI) in these electrolytes have remained elusive. Herein, we extensively combine electrochemistry and X-ray photoelectron spectroscopy (XPS) to illustrate the reaction pathways of electrolyte decomposition, especially FSI- breakdown, as well as the dissolution trend of various inorganic SEI components. The SEI-forming reactions at Cu/electrolyte interface manifest a potential (E) dependence, driven by direct electron-transfer (ET) and Li underpotential-deposition (Li UPD) at high and low E regions, respectively. By closely correlating the XPS data obtained with and without solvent washing, we demonstrate that not all the products derived from SEI reactions are incorporated into forming a passivating surface layer, with a notable portion dissolving into liquid electrolyte instead. Importantly, high-CE electrolyte dictated by the chemical identity of solvent, is found to exhibit minimized interfacial reactivity of SEI formation enabling more effective interphasial passivation, via preferential integration of passivating ingredients such as LiF. Overall, this work formulates a systematic understating of bridging the SEI chemistry, formation and passivation while identifying key characteristics of high-performance electrolyte for guiding future design.

Bao, Zhenan [SLAC National Accelerator Laboratory ↗
DOE OSTI2026

Ionic Interdiffusion at Cathode|Solid-Electrolyte Interface: A Machine Learning–Assisted Multiscale Investigation and Mitigation Strategies

Future lithium batteries are expected to use solid electrolytes to achieve higher energy density and fast charge capabilities. However, most solid electrolytes are thermodynamically unstable against layered oxide cathodes. In this study, the stability of LiCoO2 (LCO) cathode with Li10GeP2S12 (LGPS) solid electrolyte is investigated using ab initio molecular dynamics (AIMD) and machine learning molecular dynamics (MLMD). The propensity of ionic interdiffusion, formation of a passivating interphase layer, and corresponding decay in cell performance is addressed using a continuum model. Large-scale MLMD simulations confirm that the LCO|LGPS interface permits interdiffusion of cobalt (Co) and other ionic species, leading to the formation and growth of a resistive interphase and to dramatic capacity fade even in the first cycle. We examine the literature evidence that incorporating a thin layer of LiNb0.5Ta0.5O3 (LNTO) between LCO and LGPS prevents the interdiffusion of ions. Atomistic simulations suggest that substituting lithium (Li) in LNTO with Co is thermodynamically unfavorable, thereby inhibiting ionic interdiffusion. The stable Nb5+/Ta5+ states form a rigid metal-oxide framework, which consequently also prevents the substitution of niobium (Nb) or tantalum (Ta). However, continuum-level analysis suggests that the higher mechanical stiffness of LNTO can lead to interfacial delamination between the LCO and LNTO. This phenomenon reduces the effectiveness of the protective layer. This paper, therefore, highlights the need to develop novel interlayers that balance low ionic interdiffusion with low mechanical stiffness.

Ncube, Musawenkosi K.↗
DOE OSTI2025

Self‐Assembled Monolayer Templating for Engineered Nanopinholes in Passivated Contact Solar Cells

We present a novel self-assembled monolayer (SAM)-based technique to make nanopinhole-enabled passivated contacts on silicon solar cells by tuning the SAM coverage area and etch selectivity. We deposit trimethyl-silyl Si(CH 3 ) 3 groups using hexamethyldisilazane (HMDS) as the precursor over passivating dielectric layers and their stacks (SiO 2 , SiN x , SiO 2 /SiN x ) and interrupt the HMDS attachment chemistry shortly before a full monolayer is formed on its surface. Subsequent etching in dilute HF produces pinholes through the dielectric layers due to the higher etch resistance of the SAM to HF etching. The pinhole areal density (10 4 –10 8 /cm 2 ) and size (10–1000 nm) can be tuned both by duration of HMDS attachment and HF etch time. Pinholes were characterized by atomic force microscopy, tetramethylammonium hydroxide (TMAH) selective etch, and Ag decoration by electroless plating. Polysilicon (poly-Si) passivated contacts enabled by pinholes were formed by subsequent deposition of doped amorphous silicon (a-Si:H) followed by thermal crystallization and dopant drive-in. At optimal areal pinhole density ≈10 7 /cm 2 , contacts exhibit both passivation and carrier transport via pinholes as evidenced by electron beam induced current, transmission line measurements, and carrier lifetime measurements. Solar cells based with these pinhole contacts show V oc = 723 mV and FF = 80.3%. The remaining SAM layer does not affect device performance.

14 SOLAR ENERGY↗
DOE OSTI2024

Oxidation of Silicon Carbide with Atomic Oxygen through the Passive-to-Active Transition

The inelastic and reactive scattering dynamics of O( 3 P) atoms on a 6H-silicon carbide (SiC) surface were investigated as a function of temperature with a molecular beam-surface scattering technique that employed a rotatable mass spectrometer detector. One set of experiments used a pulsed hyperthermal beam that produced ~8 km s –1 O atoms, and another set of experiments used a continuous beam that contained O atoms with a nominal velocity of ~2 km s –1 . When exposed to the relatively low-flux, pulsed hyperthermal O-atom beam, a passive oxide layer on the SiC that formed at lower temperatures decomposed as the temperature increased above 1673 K. Instead of entering an active oxidation regime, a graphitic layer formed on the surface and largely protected the underlying SiC from incoming O atoms. Investigation of the oxide decomposition without O-atom bombardment revealed volatile Si and SiO products at the moment that the oxide decomposed, implying that Si sublimation occurs concurrently with oxide decomposition. In the experiment with the continuous (higher flux) O-atom beam, volatile SiO and CO products were observed after the passive oxide decomposed, indicating that active oxidation was reached. Finally, the results of this study provide evidence for the importance of Si sublimation within the active oxidation regime. Above the passive-to-active transition temperature, Si sublimation is an ongoing process, and continuous active oxidation will only occur if sufficient oxygen reacts with the surface to produce SiO more quickly than a graphitic layer can form. Thus, accurate models of SiC ablation by atomic oxygen must account for multiple competing mechanisms that depend on the surface temperature and incident O-atom flux.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Reaction-Induced Fracturing of Porous Carbonate Rocks during Volume-Increasing Replacement by Witherite

Volume-increasing replacement reactions can lead either to fracturing of the parent phase or to the formation of cohesive layers that passivate further reaction, but the factors that drive one outcome or the other are not understood. In this experimental study, we investigated the volume-increasing replacement of carbonate rocks (consisting of CaCO 3 and CaMg(CO 3 ) 2 ) of different porosity by witherite (BaCO 3 ). Samples were characterized using scanning electron microscopy, Raman spectroscopy, small-angle neutron/X-ray scattering, X-ray tomography, and scanning transmission electron microscopy. We observed the formation of a witherite reaction layer and witherite formation within pores and along grain boundaries. Despite this being a volume-increasing replacement reaction, newly formed witherite was porous, potentially allowing further replacement. Filled fractures were observed in the low-porosity carbonates, whereas witherite formed within pores in high-porosity carbonates. We conclude that fracturing of the parent phase versus passivation is contingent on the initial microstructure of the parent with an optimal degree of porosity required for fracturing.

Calcite↗
NASA NTRS1988

Passive control plate for shock-boundary layer interactions

Computational and experimental results are presented for a passive method capable of reducing or completely eliminating the separation region in shock-boundary layer interactions of the type that can result in severe performance degradation due to flow separation in supersonic and hypersonic inlets. The method involves the placement of an embedded plate in the outer portion of the boundary layer, parallel to the wall, so that the incident shock will impinge upon, and be reflected from, its surface. This will lower the pressure gradient in the low-momentum, near-wall region. A porous control plate's effect has also been investigated.

Goodman, Wesley L.↗
NASA NTRS2008

Re-active Passive (RAP) Devices for Control of Noise Transmission through a Panel

Re-Active Passive (RAP) devices have been developed to control low frequency (<1000 Hz) noise transmission through a panel. These devices use a combination of active, re-active, and passive technologies packaged into a single unit to control a broad frequency range utilizing the strength of each technology over its best suited frequency range. The RAP device uses passive constrained layer damping to cover the relatively high frequency range (>200 Hz), reactive distributed vibration absorber) to cover the medium frequency range (75 to 250 Hz), and active control for controlling low frequencies (<200 Hz). The device was applied to control noise transmission through a panel mounted in a transmission loss test facility. Experimental results are presented for the bare panel, and combinations of passive treatment, reactive treatment, and active control. Results indicate that three RAP devices were able to increase the overall broadband (15-1000 Hz) transmission loss by 9.4 dB. These three devices added a total of 285 grams to the panel mass of 6.0 kg, or approximately 5%, not including control electronics.

Carneal, James P.↗
DOE OSTI2024

Ultraviolet Laser Activation of Phosphorus-Doped Polysilicon Layers for Crystalline Silicon Solar Cells

In crystalline silicon photovoltaics (c-Si PV), a pulsed laser can be used as a substitute for a high-temperature furnace dopant diffusion/activation step. In contrast to furnace-based activation, lasers can be used to achieve highly localized doping with controlled dopant concentrations, useful in advanced architectures such as the interdigitated back contact (IBC) solar cell. In this study, a pulsed ultraviolet (UV) laser is utilized for phosphorus dopant activation within a low-pressure chemical vapor deposited (LPCVD) polycrystalline silicon (poly-Si) passivated contact layer. The highest implied open-circuit voltage iV oc values achieved using this approach reach 726 mV. However, this comes at the expense of high specific contact resistivities ρ c , which is attributed to a lower dopant concentration across the poly-Si(n + )/SiO x /c-Si interface. Regardless, the optimum iV oc , ρ c combination is measured at a laser fluence of 0.78 J cm -2 producing values of 712 mV and 89 mΩ-cm 2 , respectively. These values are still compatible with high-efficiency solar cell designs, underscoring the feasibility and effectiveness of this approach.

14 SOLAR ENERGY↗