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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Heterogeneous Integration Technologies for High-temperature, High-density, Low-profile Power Modules of Wide Bandgap Devices in Electric Drive Applications (Final Technical Report)

The goal of this project is to develop packaging technologies for making high-temperature, high-density, and low-profile wide-bandgap (WBG) power electronics modules for electric drives. These modules are aimed at enabling the DOE’s University Consortium to reach its 2025 inverter targets of ≥ 100 kW/L and ≤ 2.7 $/kW. The specific objectives are to: design and fabricate SiC half-bridge power modules with double-sided cooling and parasitic inductances < 5 nH, heat flux density > 400 W/cm 2 , and working junction temperature of 200 o C; design, fabricate, and deliver a gate driver with double-sided cooled modules for the construction of a 100 kW/L inverter at Oak Ridge National Lab; and design and prototype intelligent gate drivers with integrated current sensor and a low-profile DC-DC power supply with air-core transformer for testing power modules at 200 o C junction temperature. We followed an iterative technical approach of design, simulation, fabrication, and testing of various versions of modules, current sensors, and power supply. The state-of-the-art silicon carbide devices rated at 1.2 kV and 149 A were packaged by sintered-silver bonding on an aluminum nitride direct-bond-copper substrate for high thermal conductivity, high working temperature, and high joint reliability. Porous silver posts were used to interconnect the device’s source pads to the other direct-bond-copper substrate for low mechanical stresses, ease of manufacturing, and double-sided cooling. A current sensor based on package parasitic inductance was developed to measure switching current. A dynamic feedback scheme was developed to compensate the effect of parasitic resistance and temperature variation. A constant-current class-E dc-dc converter with air-core transformer was developed. Air-core transformer was used due to the unavailability of magnetic core at high temperatures. Gate driver and power supply were integrated with the double-side cooled, high temperature SiC power modules for testing the modules at 200 o C junction temperature. Double-pulse and continuous testing of the integrated technologies validated the design and fabrication of the three component technologies. Throughout the project, we overcame the challenge for design verification caused by low prototyping yield, which then helped train the graduate students, the future workforce, to learn the engineering know-how for low-cost manufacturing of reliable products. Below is a summary of the major accomplishments of this project: development of a prototyping process for fabricating double-side cooled (1200 V, 149 A) SiC phase-leg modules capable of working to 200 o C Tj; simulation and experimental verification of the improvement of thermo-mechanical reliability of the double-side cooled SiC phase-leg module by using rigid encapsulant; design and experimental validation of a current sensor based on package parasitic inductance and a compensation solution for eliminating the effect of parasitic resistance; design and experimental validation of a low-profile power supply with six-output air-core transformer for gate driver; functional demonstration of a SiC phase-leg module integrated with its gate driver, current sensor, and an air-core power supply at 200 o C Tj in a double-pulse switching test setup and Buck converter continuous test setup; successful completion of six PhD and two MS students who are or will work at Apple Inc., Tesla Inc., Wolfspeed Inc., Microchip Inc., Monolithic Power Systems Inc., and LG Magna Inc.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2020

Nonuniform Charge Collection in SiOx-Based Passivated-Contact Silicon Solar Cells

In this contribution, we report on the charge-collection characteristics of silicon photovoltaic devices using passivated contacts based on the c-Si/SiO x /poly-Si structure. Using electron-beam induced current (EBIC) imaging in plan-view and cross-section orientations, we find that charge collection in a device with a 1.5-nm-thick SiO x layer is fairly uniform in the p-n junction region and does not appear to be influenced by pyramidal surface texture. In contrast, a device with a 2.2-nm-thick oxide layer shows significant spatial variation in the charge-collection signal. The apexes of the pyramids exhibit reduced EBIC signal whereas the valleys between adjacent pyramids show the strongest collection. Our results indicate that charge collection in c-Si/SiO x /poly-Si structures can be influenced by both the properties of the SiO x layer and surface texture.

14 SOLAR ENERGY↗
DOE OSTI2020

Reactive ion etched, self-aligned, selective area poly-Si/SiO 2 passivated contacts

Front/back poly-Si/SiO 2 contact devices suffer from low short-circuit current density, J sc , due to parasitic optical absorption in the front poly-Si layer. Thin poly-Si (~20 nm) allows for high J sc but is not compatible with screen-printed fire-through contacts. We therefore study the effects of post-deposition etching of a thick poly-Si (200 nm) front layer by reactive ion etching (RIE) using the metal grid lines as a self-aligned mask. We show that passivation is maintained in the device during RIE and that J sc is increased by a gain in the blue quantum efficiency response. However, our specific etching parameters cause non-uniform etching of the poly-Si leading to premature loss of passivation without optimal gain in J sc . Etched, unpassivated layers can be re-passivated with a H-containing dielectric layer leading to a gain in Jsc, open circuit voltage, V oc , Fill-Factor, FF, and efficiency.

14 SOLAR ENERGY↗
DOE OSTI2020

Revealing the Nano-Scale Structure and Properties of Pinholes in SiOx Layers for POLO Contacts

In this contribution, we report on the charge collection characteristics of silicon photovoltaic devices with passivated contacts based on the c-Si/SiOx /poly-Si structure. Using electron-beam induced current (EBIC) imaging in plan-view and cross-section orientations, we find that charge collection in a device with a 1.5-nm-thick SiOx layer is fairly uniform in the p-n junction region and does not appear to be influenced by pyramidal surface texture. In contrast, a device with a 2.2-nm-thick oxide layer shows significant spatial variation in the charge-collection signal. The locations where we observe preferential collection of excess carriers is very sensitive to the processing conditions used to grow and breakup the SiOx passivation layer. In some cases the apexes of the pyramids exhibit reduced EBIC signal as the valleys between adjacent pyramids show the strongest collection. Other conditions yield enhanced charge collection at well defined spots on pyramid faces with no observable collection in the valleys.

EBIC↗
NASA NTRS1990

Silicon Detectors For Helium Liquid And Vapor

Simple electrical-resistance devices made of silicon indicate whether helium liquid or helium vapor present. Devices designed primarily for use in outer space, were tested and found to operate in normal Earth gravity. Silicon cubes supported by stainless-steel wires and strips. Voltage across each cube at fixed current indicates whether immersed in helium liquid or vapor. Liquid cools more than vapor does, resulting in greater electrical resistance. Such helium-liquid/vapor detectors incorporated into ducts or containers of laboratory equipment, and used to infer locations of liquid/vapor interfaces in order to measure quantities of liquid and vapor or to control refill operations.

Di Pirro, M. J.↗
DOE OSTI2025

Low-Cost, Screen-Printed Silver Metal Complex Inks for Silicon Heterojunction Solar Cells

Screen printing using metal particle pastes, the current photovoltaic industry metallization standard, provides fast and reliable metal grids for silicon solar cells. Recently, metal complex or reactive metal inks are attracting research interest due to their significantly low cost and higher performance compared to traditional nanoparticle silver pastes. In this work, we demonstrate, for the first time, screen-printed high-efficiency silicon heterojunction solar cells metallized by silver metal complex inks on industrial G1-size (158.75 x 158.75 mm2) wafers. We demonstrate screen-printed Ag metal complex ink grid patterns with continuous fingers ~100-120 ..mu..m wide. The printed Ag grid is very thin (~1 ..mu..m), which is an order of magnitude thinner than the current ~20-30 ..mu..m fingers printed with low-temperature nanoparticle-based pastes. Double printing allows silicon heterojunction devices with efficiencies >20%. This is the highest efficiency so far, to our knowledge, of industrial solar cell precursors using this metallization technology. Simulation results suggested that increasing the thickness of the metal film does not significantly improve efficiency due to the dense, highly conductive films. So, a single print of ~1 ..mu..m finger would be enough to produce cells that perform similarly to a ~20 ..mu..m thick nanoparticle paste printed cells. Additionally, solar cells printed on G1 wafers with silver metal complex ink required more than 10 times less silver (~0.03 g) compared to those using silver/copper nanoparticle paste (~0.4 g of Ag). These results indicate that metal complex inks are a very promising replacement for silver nanoparticle pastes for industrial-scale metallization in an age of resource scarcity and high costs of noble metals.

14 SOLAR ENERGY↗
DOE OSTI2025

Schrödinger cat states of a nuclear spin qudit in silicon

High-dimensional quantum systems are a valuable resource for quantum information processing. They can be used to encode error-correctable logical qubits, which has been demonstrated using continuous-variable states in microwave cavities or the motional modes of trapped ions. For example, high-dimensional systems can be used to realize ‘Schrödinger cat’ states, which are superpositions of widely displaced coherent states that can be used to illustrate quantum effects at large scales. Recent proposals have suggested encoding qubits in high-spin atomic nuclei, which are finite-dimensional systems that can host hardware-efficient versions of continuous-variable codes. Here, in this study, we demonstrate the creation and manipulation of Schrödinger cat states using the spin-7/2 nucleus of an antimony atom embedded in a silicon nanoelectronic device. We use a multi-frequency control scheme to produce spin rotations that preserve the symmetry of the qudit, and we constitute logical Pauli operations for qubits encoded in the Schrödinger cat states. Our work demonstrates the ability to prepare and control non-classical resource states, which is a prerequisite for applications in quantum information processing and quantum error correction, using our scalable, manufacturable semiconductor platform.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Perovskite-driven solar C 2 hydrocarbon synthesis from CO 2

Photoelectrochemistry (PEC) presents a direct pathway to solar fuel synthesis by integrating light absorption and catalysis into compact electrodes. Yet, PEC hydrocarbon production remains elusive due to high catalytic overpotentials and insufficient semiconductor photovoltage. Here we demonstrate ethane and ethylene synthesis by interfacing lead halide perovskite photoabsorbers with suitable copper nanoflower electrocatalysts. The resulting perovskite photocathodes attain a 9.8% Faradaic yield towards C 2 hydrocarbon production at 0 V against the reversible hydrogen electrode. The catalyst and perovskite geometric surface areas strongly influence C 2 photocathode selectivity, which indicates a role of local current density in product distribution. The thermodynamic limitations of water oxidation are overcome by coupling the photocathodes to Si nanowire photoanodes for glycerol oxidation. These unassisted perovskite–silicon PEC devices attain partial C 2 hydrocarbon photocurrent densities of 155 µA cm -2 , 200-fold higher than conventional perovskite–BiVO 4 artificial leaves for water and CO 2 splitting. These insights establish perovskite semiconductors as a versatile platform towards PEC multicarbon synthesis.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Automated Design-for-Reliability of a Power Electronics Module

The design of a power electronics module is a multiphysics problem and involves electrical, thermal, and reliability targets and constraints. Although the electrical and thermal design consider multiple aspects such as materials, geometry, and energy losses, reliability design is often limited to the selection of the attachment materials and electrical interconnect types. In this paper, we incorporate reliability metrics in the design phase by investigating the impact of package geometry on the thermomechanical behavior of the die-attachment material. To this end, we conducted thermal and power cycling simulations of a commercial six-pack power module with silicon carbide devices to compute junction temperature and strain energy density per cycle, respectively. We performed multiple simulations with different geometric dimensions and established a correlation between input features and output variables using subspace-based dimension reduction. The machine learning-based dimension reduction method serves as a surrogate model, which can be employed to identify the optimal module design from a thermal and reliability standpoint.

design-for-reliability↗
DOE OSTI2022

Single-Phase Dielectric Fluid Thermal Management for Power-Dense Automotive Power Electronics

This paper describes the design and performance of a dielectric fluid cooling concept for automotive power electronics. The concept combines a low-thermal-resistance package (which eliminates metalized ceramic substrates) with a high-performance convective cooling strategy (slot jets impinging on finned surfaces). Modeling was first used to design the cooling system to maximize thermal performance and minimize pumping power. Additionally, a prototype was then fabricated, and experiments were conducted to validate the model predictions using three fluids at various fluid flow rates (16.7 cm 3 /s [1 L/min] to 68.3 cm 3 /s [4.1 L/min]) and inlet temperatures (30C and 70C). The final design was compact (120-cm 3 total volume, including heat exchanger and conceptual power modules) and cooled 12 devices (e.g., silicon carbide). The validated model was then used to predict the junction-to-fluid thermal resistance and pumping power for various conditions, including 40C fluid temperature. The results predict thermal resistance values as low as 19 mm 2 K/W are possible using the dielectric fluid cooling approach. The dielectric fluid cooling system is predicted to provide thermal resistance and pumping power values that are approximately 56% and 90% lower, respectively, compared to an automotive power electronics cooling system.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2023

PCB-on-DBC GaN Power Module Design with High-Density Integration and Double-Sided Cooling

Lateral gallium nitride (GaN) high-electron-mobility transistors (HEMTs) present better electrical characteristics compared to silicon or silicon carbide devices such as high switching speed and low gate charge, but also present additional challenges on the module design. Here, this paper discusses a high-density GaN power module with double-sided cooling, low inductance, on-package decoupling capacitors, and integrated gate drivers. The GaN dies as well as the gate drive are sandwiched between the printed circuit board (PCB) and direct bonded copper (DBC) substrate to achieve compact loop and double-sided cooling effect. Design considerations and thermal performance are analyzed. A module assembly procedure is presented utilizing the layer-by-layer attachment process. Finally, a 2.7 cm x 1.8 cm half-bridge GaN power module is fabricated and tested, achieving a low power-loop inductance of 1.03 nH, and the overshoot voltage of the switching waveform is less than 5% under a 400-V/25-A double-pulse test. The thermal resistance is 0.32 K/W, verified by simulation and experimental results. The design and assembly process can be generalized and applied to high power applications to achieve high power density and high performance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Performance of an optical TPC Geant4 simulation with opticks GPU-accelerated photon propagation

We investigate the performance of Opticks, a NVIDIA OptiX API 7.5 GPU-accelerated photon propagation tool compared with a single-threaded Geant4 simulation. We compare the simulations using an improved model of the NEXT-CRAB-0 gaseous time projection chamber. Performance results suggest that Opticks improves simulation speeds by between 58.47 ± 0.02 and 181.39 ± 0.28 times relative to a CPU-only Geant4 simulation and these results vary between different types of GPU and CPU. A detailed comparison shows that the number of detected photons, along with their times and wavelengths, are in good agreement between Opticks and Geant4.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

Even lighter particle dark matter

We report on recent progress in the search for dark matter particles with masses from 1 Mev c ^{-2} − 2 to 1 Gev c ^{-2} − 2 . Several dark matter candidates in this mass range are expected to generate measurable electronic-recoil signals in direct-detection experiments. We focus on dark matter particles scattering with electrons in semiconductor detectors since they have fundamentally the highest sensitivity due to their low ionization threshold. Charge-coupled device (CCD) silicon detectors are the leading technology, with significant progress expected in the coming years. We present the status of the CCD program and briefly report on other efforts.

Chavarria, Alvaro E.↗
NASA NTRS1971

Metallization failures

Metallization-related failure mechanisms were shown to be a major cause of integrated circuit failures under accelerated stress conditions, as well as in actual use under field operation. The integrated circuit industry is aware of the problem and is attempting to solve it in one of two ways: (1) better understanding of the aluminum system, which is the most widely used metallization material for silicon integrated circuits both as a single level and multilevel metallization, or (2) evaluating alternative metal systems. Aluminum metallization offers many advantages, but also has limitations particularly at elevated temperatures and high current densities. As an alternative, multilayer systems of the general form, silicon device-metal-inorganic insulator-metal, are being considered to produce large scale integrated arrays. The merits and restrictions of metallization systems in current usage and systems under development are defined.

Beatty, R.↗