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At least 217 records · Page 12

Thermal blanket insulation for advanced space transportation systems

The feasibility of weaving Nextel ceramic and Nicalon silicon carbide yarns into integrally woven, three dimensional fluted core fabrics was demonstrated. Parallel face fabrics joined with woven fabric ribs to form triangular cross section flutes between the faces were woven into three single and one double layer configuration. High warp yarn density in the double layer configuration caused considerable yarn breakage during weaving. The flutes of all four fabrics were filled with mandrels made from Q-Fiber Felt and FRCI-20-12 to form candidate insulation panels for advanced Space Transportation Systems. Procedures for preparing and inserting the mandrels were developed. Recommendations are made on investigating alternate methods for filling the flutes with insulation, and for improving the weaving of these types of fabrics.

Pusch, Richard H.↗

Insulating Blankets Withstand Higher Temperatures

Thermal-insulation blankets withstand repeated exposure to temperatures up to 2,000 degrees C. Thin, light in weight, and flexible. Developed to protect proposed aerospacecraft like Aeroassisted Space Transfer Vehicle and National Aerospace Plane, exposed to temperatures higher than those on surface of Space Shuttle during reentry into atmosphere of Earth. Also useful as furnace insulation and in firefighters' clothing. Sewing threads made of silicon carbide yarn essential components of blankets.

Kourtides, D. A.↗

Measuring High Temperatures In Ceramic-Fiber Blankets

Thermocouple assemblies devised specifically for measuring temperatures at fixed locations within insulating blankets made of such ceramic fibers as alumina, silicon carbide, and/or aluminoborosilicate. Thermocouples measure temperatures from 100 to 3,200 degrees F in oxidizing atmospheres. Wires enclosed in alumina sheath for protection against hot oxidation and mechanical damage.

Kourtides, Demetrius A.↗

Enhanced adhesion by high energy bombardment

Films (12) of gold, copper, silicon nitride, or other materials are firmly bonded to insulator substrates (12) such as silica, a ferrite, or Teflon (polytetrafluorethylene) by irradiating the interface with high energy ions. Apparently, track forming processes in the electronic stopping region cause intermixing in a thin surface layer resulting in improved adhesion without excessive doping. Thick layers can be bonded by depositing or doping the interfacial surfaces with fissionable elements or alpha emitters.

Griffith, Joseph E.↗

Microscopy and microstructure of Shuttle thermal protection system materials

Examples of the contribution of microstructural analysis to the development of the Space Shuttle tile insulation system are presented, with photographic examples of the scanning electron microscope (SEM) investigations. After the basic thermal protection system materials had been selected, it was neccessary to analyze the mechanical responses of the combined materials; which included: (1) the polymer strain isolation pad (SIP), (2) the room temperature-vulcanizing silicone rubber bond, (RTV), and (3) rigid ceramic fiber reusable surface insulation (RSI). Microstructural analysis was used to provide information on deformation and fracture mechanisms, load transfer mechanisms, and structural alterations occurring before final failure. Both quantitative and qualitative information was obtained in the open, three-dimensional fibrous structures of the ceramic tiles by means of novel techniques of encapsulation and dissolution.

Newquist, C. W.↗

Growing Aligned Carbon Nanotubes for Interconnections in ICs

A process for growing multiwalled carbon nanotubes anchored at specified locations and aligned along specified directions has been invented. Typically, one would grow a number of the nanotubes oriented perpendicularly to a silicon integrated-circuit (IC) substrate, starting from (and anchored on) patterned catalytic spots on the substrate. Such arrays of perpendicular carbon nanotubes could be used as electrical interconnections between levels of multilevel ICs. The process (see Figure 1) begins with the formation of a layer, a few hundred nanometers thick, of a compatible electrically insulating material (e.g., SiO(x) or Si(y)N(z) on the silicon substrate. A patterned film of a suitable electrical conductor (Al, Mo, Cr, Ti, Ta, Pt, Ir, or doped Si), having a thickness between 1 nm and 2 m, is deposited on the insulating layer to form the IC conductor pattern. Next, a catalytic material (usually, Ni, Fe, or Co) is deposited to a thickness between 1 and 30 nm on the spots from which it is desired to grow carbon nanotubes. The carbon nanotubes are grown by plasma-enhanced chemical vapor deposition (PECVD). Unlike the matted and tangled carbon nanotubes grown by thermal CVD, the carbon nanotubes grown by PECVD are perpendicular and freestanding because an electric field perpendicular to the substrate is used in PECVD. Next, the free space between the carbon nanotubes is filled with SiO2 by means of CVD from tetraethylorthosilicate (TEOS), thereby forming an array of carbon nanotubes embedded in SiO2. Chemical mechanical polishing (CMP) is then performed to remove excess SiO2 and form a flat-top surface in which the outer ends of the carbon nanotubes are exposed. Optionally, depending on the application, metal lines to connect selected ends of carbon nanotubes may be deposited on the top surface. The top part of Figure 2 is a scanning electron micrograph (SEM) of carbon nanotubes grown, as described above, on catalytic spots of about 100 nm diameter patterned by electron-beam lithography. These and other nanotubes were found to have lengths ranging from 2 to 10 m and diameters ranging from 30 to 200 nm, the exact values of length depending on growth times and conditions and the exact values of diameter depending on the diameters and thicknesses of the catalyst spots. The bottom part of Figure 2 is an SEM of an embedded array of carbon nanotubes after CMP.

Li, Jun↗

Efficient thermoelectric device

A high efficiency thermo electric device comprising a multi nanolayer structure of alternating insulator and insulator/metal material that is irradiated across the plane of the layer structure with ionizing radiation. The ionizing radiation produces nanocrystals in the layered structure that increase the electrical conductivity and decrease the thermal conductivity thereby increasing the thermoelectric figure of merit. Figures of merit as high as 2.5 have been achieved using layers of co-deposited gold and silicon dioxide interspersed with layers of silicon dioxide. The gold to silicon dioxide ratio was 0.04. 5 MeV silicon ions were used to irradiate the structure. Other metals and insulators may be substituted. Other ionizing radiation sources may be used. The structure tolerates a wide range of metal to insulator ratio.

Ila, Daryush↗

The Development of Silicon Carbide Based Hydrogen and Hydrocarbon Sensors

Silicon carbide is a high temperature electronic material. Its potential for development of chemical sensors in a high temperature environment has not been explored. The objective of this study is to use silicon carbide as the substrate material for the construction of chemical sensors for high temperature applications. Sensors for the detection of hydrogen and hydrocarbon are developed in this program under the auspices of Lewis Research Center, NASA. Metal-semiconductor or metal-insulator-semiconductor structures are used in this development. Specifically, using palladium-silicon carbide Schottky diodes as gas sensors in the temperature range of 100 to 400 C are designed, fabricated and assessed. The effect of heat treatment on the Pd-SiC Schottky diode is examined. Operation of the sensors at 400 C demonstrate sensitivity of the sensor to hydrogen and hydrocarbons. Substantial progress has been made in this study and we believe that the Pd-SiC Schottky diode has potential as a hydrogen and hydrocarbon sensor over a wide range of temperatures. However, the long term stability and operational life of the sensor need to be assessed. This aspect is an important part of our future continuing investigation.

Liu, Chung-Chiun↗

The Characterization of the Selected Materials for Space Shuttle

The harsh conditions to which the Space Shuttles are exposed during flight required the development and use of many unique materials. These materials were specially designed to withstand extreme temperatures, in some cases over 1600 C, while other material must withstand the cryogenic conditions of -253 C, and others must operate while under extreme loads. All of these materials must not only operate in the harsh condition but they must be light weight as well. The Space Shuttle is composed of three major components when configured for launch, Figure 1; the Shuttle, solid rocket boosters, and external tank (ET). The different heat shields of the Shuttle make up the thermal protection system (TPS); this system consists of many different types of components designed to operate on various parts of the vehicle. The body of the Shuttle and ET are composed mainly of aluminum alloy and graphite epoxy. The TPS consists of reinforced carbon-carbon (RCC) used on the wing leading edges and nose cap areas while the upper forward fuselage areas, the entire underside of the Shuttle, the Orbiter maneuvering system, and reaction control system utilize blacc high temperature reusable surface insulation (HRSI) tiles, Figure 2. Other areas of the Orbiter are protected by fibrous refractory composite insulation (FRCI) tiles. Areas where the temperature stays below 649 C, such as the forward fuselage, mid-fuselage, aft fuselage, vertical tail, and upper wing, are protected by other material such as, white low temperature reusable surface insulation (LRSI) tiles, advanced flexible reusable surface insulation (AFRSI) blankets, and felt reusable surface insulation (FRSI) white blankets. The RCC is a pyrolized laminated carbon with the outer surface converted to silicon carbide to prevent oxidation. The FiRST tiles are made of a low-density, high purity silica 99.8-percent amorphous fiber insulation that is made rigid by ceramic bonding resulting in 90-percent void and 10-percent materials. The RCC and HRSI are used in areas where the temperature rises above 1260 T. The FRCI tiles are high strength tiles derived by adding alumina-bososilicate fiber to the pure silica tile slurry that welds the micron-sizes fibers of pure silica into a rigid structure during sintering. The FRCI is composed of 20-percent alumina-borosilicate fibers and 80-percent silica fibers, and provided improved strength, durability and resistance to coating cracking and weight reduction than HRSI.

Kim, Hae-Soo↗

Development of design allowables data for adhesives for attaching reusables surface insulation, addendum 1A

The task consisted of conducting mechanical and thermal tests to establish design allowables data on a new room temperature vulcanizing (RTV) silicone adhesive, X3-6004. Low modulus, coupled with relatively low density and good low-temperature properties of this adhesive, places it in contention as a candidate for attaching reusable surface insulation on the space shuttle. Data obtained show that the modulus values of X3-6004 are significantly lower than those of RTV-560 and the other three adhesives characterized at test temperatures from 550 to -175 F. At -175, -200 and -270 F, the modulus of X3-6004 is approximately the same as GE RTV-560 and the other three silicone adhesives. The X3-6004 adhesive exhibits good processing properties. It has a 12 percent lower density than RTV-560. Although lower in overall strength properties as compared to the other adhesives in the program, X3-6004 has adequate adhesion to 2024T81 aluminum to compete as an adhesive for attaching reusable surface insulation. It does exhibit some tendency to revert and soften at temperatures above 350 F when in a confined area.

Owen, H. P.↗

An Evaluation of High Temperature Airframe Seals for Advanced Hypersonic Vehicles

High temperature seals are required for advanced hypersonic airframe applications. In this study, both spring tube thermal barriers and innovative wafer seal systems were evaluated under relevant hypersonic test conditions (temperatures, pressures, etc.) via high temperature compression testing and room temperature flow assessments. Thermal barriers composed of a Rene 41 spring tube filled with Saffil insulation and overbraided with a Nextel 312 sheath showed acceptable performance at 1500 F in both short term and longer term compression testing. Nextel 440 thermal barriers with Rene 41 spring tubes and Saffil insulation demonstrated good compression performance up to 1750 F. A silicon nitride wafer seal/compression spring system displayed excellent load performance at temperatures as high as 2200 F and exhibited room temperature leakage values that were only 1/3 those for the spring tube rope seals. For all seal candidates evaluated, no significant degradation in leakage resistance was noted after high temperature compression testing. In addition to these tests, a superalloy seal suitable for dynamic seal applications was optimized through finite element techniques.

DeMange, Jeffrey J.↗

High temperature material interactions of thermoelectric systems using silicon germanium.

The efficient use of silicon germanium thermoelectric material for radioisotope thermoelectric generators (RTG) is achieved by operation at relatively high temperatures. The insulation technique which is most appropriate for this application uses multiple layers of molybdenum foil and astroquartz. Even so, the long term operation of these materials at elevated temperatures can cause material interaction to occur within the system. To investigate these material interactions, the Jet Propulsion Laboratory is currently testing a number of thermoelectric modules which use four silicon germanium thermoelectric couples in conjunction with the multifoil thermal insulation. The paper discusses the results of the ongoing four-couple module test program and correlates test results with those of a basic material test program.

Stapfer, G.↗

Atomic Layer Deposition Josephson Junctions for Cryogenic Circuit Applications

Superconducting-insulating-superconducting (SIS) trilayers have been produced for Josephson Junction fabrication by thermal atomic layer deposition (ALD) processes. The trilayers are composed of alternating layers of Ti0.4N0.6/Al2O3/ Ti0.4N0.6, deposited at 450°C, in a thermal ALD reactor on Al2O3-coated silicon. The conformal nature of the ALD process provides excellent step coverage of superconducting and insulating films. The film thickness of a single ALD cycle being one mono-layer, allows us to precisely control the tunnel-barrier insulator thickness by counting the number of ALD cycles during the insulator deposition step. Tunnel-junctions with critical current 500 A/cm2 are reported. Fabrication of Josephson Junctions and progress toward development of a single-element ALD Superconducting Quantum Interference Device (SQUID) will be discussed

Atomic Layer Definition↗

Temperature or pressure controller

Silicon chip thermal sensor coupled into a solid state power source controls temperature or pressure in combustion research. The silicon chip sensing element is embedded in a ceramic support for insulation, and connected to a high resistance bridge which operates the solid state power amplifiers.

Gillett, J. D.↗

Boron Arsenide and Boron Phosphide for High Temperature and Luminescent Devices

The crystal growth of boron arsenide and boron phosphide in the form of bulk crystals and epitaxial layers on suitable substrates is discussed. The physical, chemical, and electrical properties of the crystals and epitaxial layers are examined. Bulk crystals of boron arsenide were prepared by the chemical transport technique, and their carrier concentration and Hall mobility were measured. The growth of boron arsenide crystals from high temperature solutions was attempted without success. Bulk crystals of boron phosphide were also prepared by chemical transport and solution growth techniques. Techniques required for the fabrication of boron phosphide devices such as junction shaping, diffusion, and contact formation were investigated. Alloying techniques were developed for the formation of low-resistance ohmic contacts to boron phosphide. Four types of boron phosphide devices were fabricated: (1) metal-insulator-boron phosphide structures, (2) Schottky barriers; (3) boron phosphide-silicon carbide heterojunctions; and (4) p-n homojunctions. Easily visible red electroluminescence was observed from both epitaxial and solution grown p-n junctions.

Chu, T. L.↗

Solar Cells

The Heat Exchanger Method (HEM) produces high efficiency crystal ingots in an automated well-insulated furnace offering low equipment, labor and energy costs. The "grown" silicon crystals are used to make solar cells, or photovoltaic cells which convert sunlight directly into electricity. The HEM method is used by Crystal Systems, Inc. and was developed under a NASA/Jet Propulsion Laboratory contract. The square wafers which are the result of the process are sold to companies manufacturing solar panels.

Source record↗

Deep Charging Evaluation of Satellite Power and Communication System Components

Deep charging, in contrast to surface charging, focuses on electron penetration deep into insulating materials applied over conductors. A classic example of this scenario is an insulated wire. Deep charging can pose a threat to material integrity, and to sensitive electronics, when it gives rise to an electrostatic discharge or arc. With the advent of Electric Orbit Raising, which requires spiraling through Earth's radiation belts, satellites are subjected to high energy electron environments which they normally would not encounter. Beyond Earth orbit, missions to Jupiter and Saturn face deep charging concerns due to the high energy radiation environments. While predictions can be made about charging in insulating materials, it is difficult to extend those predictions to complicated geometries, such as the case of an insulating coating around a small wire, or a non-uniform silicone grouting on a bus bar. Therefore, to conclusively determine the susceptibility of a system to arcs from deep charging, experimental investigations must be carried out. This paper will describe the evaluation carried out by NASA's Marshall Space Flight Center on subscale flight-like samples developed by Space Systems/Loral, LLC. Specifically, deep charging evaluations of solar array wire coupons, a photovoltaic cell coupon, and a coaxial microwave transmission cable, will be discussed. The results of each evaluation will be benchmarked against control sample tests, as well as typical power system levels, to show no significant deep charging threat existed for this set of samples under the conditions tested.

Schneider, T. A.↗