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DOE OSTI2020

Growth and Properties of Vapor Diffused Nb3Sn Coating for Superconducting Radiofrequency Accelerator Cavity Applications

The desire to reduce construction and operating costs of future SRF accelerators motivates the search for higher-performing alternative materials. Nb3Sn (Tc ~ 18.3 K and Hsh ~ 425 mT) is the front runner. The tin vapor diffusion process is currently the technique of choice to produce promising Nb3Sn-coated cavities. Understanding Nb3Sn nucleation and growth in this process is essential to progress. Samples representing different stages of Nb3Sn formation have been produced and studied to elucidate the effects of nucleation, growth, process conditions, and impurities. Nb3Sn films with thickness from a few hundred nm up to ~15 µm were grown and characterized. The microscopic examination of samples suggests the mechanisms of thin film nucleation and growth. Broadly, nucleation deposits tin as a thin surface phase and, under some conditions, a few hundred nanometer sized particles as well. Conditions that impair nucleation promote the formation of defects, such as ?patches?, in subsequent coating growth. Analysis of coated samples is consistent with the model of Nb3Sn grown in which tin diffuses via grain boundaries to Nb3Sn-Nb interface, where the growth Nb3Sn into the niobium bulk takes place. Similar scaling laws are found for grain growth and layer thickness. Non-parabolic layer growth is consistent with significant grain growth, which reduces the number of Sn-transport channels. Examination of patchy region in Nb3Sn coating revealed it to be large single crystalline grains, pointing to impeded Nb3Sn layer growth due to low grain boundary density, resulting in a significantly thin coating in those areas. Examination of RF loss regions from a coated cavity, identified with a thermometry mapping system showed patchy regions and carbonus defects were associated with strong local field-dependent surface resistance. RF measurements of coated cavities were combined with material characterization of witness samples and coated-cavity cutouts to improve the coating process. Understanding obtained and applied to cavity coatings, resulted in single-cell Nb3Sn cavities with a quality factor of ~2 ×1010 up to 15 MV/m accelerating gradient at 4 K, without "Wuppertal" Q-slope. We have also produced Nb3Sn-coated CEBAF 5-cell cavities with accelerating gradients useful for accelerator cryomodules. This dissertation will discuss the genesis of the Nb3Sn coating in a typical tin vapor diffusion process, effects of different process parameters, and its consequences to the coating of single-cell and multi-cell SRF cavities.

Pudasaini, Uttar↗

DOE OSTI2022

Impact of 2D-3D heterointerface on remote epitaxial interaction through graphene

Remote epitaxy has drawn attention as it offers epitaxy of functional materials that can be released from the substrates with atomic precision. The realization of remote epitaxy leads to profound impact on production and heterointegration of flexible, transferrable, and stackable freestanding single-crystalline membranes, which can be extremely useful in manufacturing next generation electronic and photonic devices. In addition, the remote interaction of atoms and adatoms through two-dimensional (2D) materials in remote epitaxy allows investigation and utilization of electrical/chemical/physical coupling of bulk (3D) materials via 2D materials (3D-2D-3D coupling). Here, we unveil the respective roles and impacts of the substrate material, graphene, substrate-graphene interface, and epitaxial material for electrostatic coupling of these materials. The coupling governs cohesive ordering and can lead to single-crystal epitaxy in the overlying film. We show that simply coating a graphene layer on wafers does not guarantee successful implementation of remote epitaxy, since atomically precise control of the graphene-coated interface is required. Also, it provides key considerations for maximizing the remote electrostatic interaction between the substrate and adatoms. This was enabled by exploring various material systems and processing conditions, and we demonstrate that the rules of remote epitaxy vary significantly depending on the ionicity of material systems as well as the graphene-substrate interface and the epitaxy environment. The general rule of thumb discovered here enables expanding 3D material libraries that can be stacked in freestanding form.

Lu, Kuangye↗

DOE OSTI2022

Impact of 2D-3D heterointerface on remote epitaxial interaction through graphene

Lu, KUANGYE↗

NASA NTRS1987

A DSC study on crystalline LaRC TPI powder - A new version with higher initial molecular weight

A new version of crystalline Langley Research Center Thermoplastic Polyimide (LaRC-TPI) imidized powder, which possesses a higher initial molecular weight (MW), has been prepared and characterized. The scheme used for cyclodehydration during the synthesis of this material is described. Evidence of a higher initial MW for the subject LaRC-TPI is supported by both measurements of the inherent viscosity and the DSC thermograms. An initial melting peak at 295 C is noted in the freshly-synthesized sample. The powder can be recrystallized at any elevated temperatures below 340 C, and a single crystalline endothemic peak is always observed after various thermal histories. The heat of fusion for the fresh sample, as represented by the area under the melting peak in the directional scanning calorimeter thermogram, is about 3.9 cal/gm. Comparisons of thermal properties for the subject material are made to those exhibited by the commercial LaRC-TPI powder.

Hou, Tan-Hung↗

DOE OSTI2021

Transport properties and thermal behavior of YbMnSb 2 semimetal above room temperature

Single crystals of ytterbium manganese diantimonide, YbMnSb 2 have been grown from a high-temperature reaction of the elements, employing molten Sb as self-flux. This phase crystallizes in the tetragonal centrosymmetric space group P4/nmm (No. 129) and adopts the ZrCuSiAs structure type. Here, the structure consists of Sb-based square nets and PbO-type layers formed by fused [MnSb 4/4 ] tetrahedra. YbMnSb 2 is stable under ambient atmosphere and incongruently melts at a temperature of ca. 1120 K. In the temperature range from 300 K to 450 K, the electrical resistivity of the as-grown single-crystalline material is as low as 3.2 mΩ cm, while its thermopower is as high as 180 μV/K. As such, YbMnSb 2 shows promise for thermoelectric applications in the mid-temperature region, with an estimated power factor of 0.85–0.95 mW/(m K 2 ).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2022

Significant improvement of conversion efficiency by passivation of low-angle grain boundaries in flexible low-cost single-crystal-like GaAs thin-film solar cells directly deposited on metal tape

We develop an easily implementable yet effective process to achieve high power conversion efficiency in newly-developed flexible single-crystal-like GaAs thin-film photovoltaic solar cells on cheap metal tape. We study various techniques on the fabricated devices to passivate the defect states associated with dangling bonds at low-angle grain boundaries (LA-GBs) existing in the single-crystal-like GaAs material. We report that sulfur by trioctylphosphine sulfide (TOP:S) solution treatment can partially but effectively passivate the defect states at the LA-GBs to increase all the solar cell performance parameters of open-circuit voltage VOC (33.2%), short-circuit current JSC (19.5%), and fill factor FF (25.8%), resulting in the improvement of the power conversion efficiency more than double. The material and device characterizations and numerical modeling are performed to propose a mechanism, also suggesting that the power conversion efficiency higher than 20%, which is an important target milestone in emerging solar cell technologies, can be achieved. This work presents the first effective passivation of the bulk defects in GaAs at the device level and can also offer a solution for other photonic and electronic devices using non-single-crystalline GaAs films for flexible electronics.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Electronic Structure and Spin Correlations in Novel Magnetic Structures

The research has advanced understanding of the interrelation between the crystal structure and magnetism in several materials which are or can be of interest for the development of improved, specialized or more cost-effective permanent magnets, as well as in selected materials for biomedical and catalytic applications. Fundamental aspects of ferromagnetism were investigated for Mn-Ge, Co-V and Co-Ge nanoclusters and for melt-spun Co-Sn alloys. New solution-chemistry synthesis methods were designed and tested for Fe-Pt, Fe3C and Fe3O4 nanoparticles. Off-stoichiometric Laves phases in the Fe-Si-Zr, Fe-Nb and Fe-Ta systems, as well as Fe5(Si,Ge)B2 compounds were assessed as new rare-earth-free permanent magnet materials; all except the Fe-Si-Zr Laves phases were found to be promising enough to merit a further exploration. A new method for manufacturing rare-earth-free magnets based on the MnBi compound was developed; by purposely avoiding oxidation-sensitive fine single-crystalline powders, the new method yields magnets with a 50% larger energy storage capacity. Studies of rare-earth-lean permanent-magnet materials (lean compared to the currently predominant Nd-Fe-B materials) were focused on the tetragonal compound of the ThMn12 structure type and included both discovery and characterization of new formulations and exploration of new fabrication/processing techniques. Among the most significant achievements were successful preparation of a vanadium-lean SmFe11V compound, the first observation of thermomechanically induced texture in nanocrystalline Sm(Fe,V)12 alloys, and a breakthrough reduction-diffusion synthesis of Sm1-xZrx(Fe0.8Co0.2)11.2Ti0.8 single-crystal particles with a coercivity as high as 12.6 kOe. Several experiments aimed at improvement of the Nd-Fe-B magnet have also been undertaken including a five-fold increase of the coercivity through a grain-boundary diffusion treatment of a Nd10Fe84B6 nanocrystalline alloy.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Itinerant G-type antiferromagnet SrCr 2 As 2 studied by magnetization, heat capacity, electrical resistivity, and NMR measurements

Here, the physical properties of itinerant antiferromagnetic (AFM) SrCr 2 As 2 with body-centered tetragonal ThCr 2 Si 2 structure were investigated in single crystalline and polycrystalline forms by electrical resistivity ρ, heat capacity C p , magnetic susceptibility χ versus temperature T, and magnetization M versus applied magnetic field H isotherm measurements as well as 75 As and 53 Cr nuclear magnetic resonance (NMR) measurements in the wide temperature range T = 1.6–900 K. From the χ(T) and 75 As NMR measurements, the G-type AFM state below T N = 615(15) K has been determined, consistent with the previous neutron-diffraction measurements. Direct evidence of magnetic ordering of the Cr spins was shown by the observation of the 53 Cr NMR spectrum under H = 0. From the χ( T) measurements on single-crystal SrCr 2 As 2 under the two different magnetic field directions H|| ab and H || c in the AFM state, the Cr ordered moments are shown to align along the c axis in the G-type AFM state. The metallic state is directly evidenced by the ρ, C p , and NMR measurements, and the density of states at the Fermi energy $\mathscr{D}$(E F ) in the AFM state is estimated to be 7.53 states/eV f.u. for both spin directions which is almost twice the bare $\mathscr{D}$(E F ) estimated from first-principles calculations, suggesting an enhancement of the conduction-carrier mass by a factor of two in the AFM state. The $\mathscr{D}$(E F ) is found to be nearly constant below at least 100 K and is independent of H. The ρ(T) is found to show T-linear behavior above T N and exhibits positive curvature below T N where significant loss of spin-disorder scattering upon magnetic ordering is observed. The resistivity anisotropy of the compound remains moderate ρ c /ρ a ~ 9 through most of the magnetically ordered phase but shows a rapid increase below 50 K.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2020

Metalorganic chemical vapor deposition of ZnGeN 2 films on GaN: effects of cation stoichiometry on surface morphology and crystallinity

Novel optoelectronic device designs based on the heterostructures of III-N and II-IV-N 2 are promising to advance device performance significantly. For example, by utilizing InGaN-ZnGeN 2 quantum well (QW) structures instead of pure InGaN, the band structure engineering in the QW active region can lead to improved electron-hole wavefunction overlap, and thus enhance the radiative efficiency for photon generation. These novel heterostructures have great potential to address the current challenge of low quantum efficiency in InGaN QW based light emitting diodes emitting in green and beyond. The materials development of ZnGeN 2 is still at an early stage as compared to the much matured GaN material system. In an ideal octet rule preserving ordered structure of ZnGeN 2 , every N atom is coordinated by exactly two Zn and two Ge atoms. However, local violation of octet rule can be caused by non-ideal coordination of N by the cations. The disordered structure is thermodynamically less favorable but can still be achieved, for example, in kinetics-limited growth regime. The ordered ZnGeN 2 has a bandgap very close to that of GaN (~3.4 eV) and a lattice mismatch of <0.1% with GaN. Interestingly, the valence band of ZnGeN 2 has been predicted to be ~1 eV above that of GaN, which has inspired novel designs for high efficiency light emitters. In this work, we investigated the metalorganic chemical vapor deposition (MOCVD) of ZnGeN 2 films on GaN/c-sapphire templates. Diethylzinc (DEZn), germane (GeH4) and ammonia were used as the precursors for Zn, Ge and N, respectively. A systematic study was conducted to investigate the cation stoichiometry as a function of growth temperature (TG), total reactor pressure (P) and DEZn/GeH 4 molar flow rate ratio (RII/IV). Under the investigated growth window, the Zn/(Zn+Ge) composition in the films, determined from energy dispersive X-ray spectroscopy, decreased monotonically with increase in TG but increased with increase in P and RII/IV. Atom probe tomography data did not indicate the presence of any secondary phases such as Zn 3 N 2 or Ge 3 N 4 . The surface morphology and crystallinity of the grown films had strong correlation with the Zn/(Zn+Ge) composition. The scanning electron microscopy images showed that the near-stoichiometric films have planar surfaces whereas Zn-rich films had crystallites on their surface and the Zn-poor films had faceted surface. Scanning transmission electron microscopy (STEM) imaging revealed that the Zn-rich and Zn-poor films have columnar and filament-like morphology, respectively, whereas the near-stoichiometric films have continuous film-like cross-sectional morphology. TEM nano-diffraction patterns as well as X-ray diffraction 2θ-ω scan profiles indicate that the near stoichiometric films are single crystalline. Nano-diffraction pattern of the stoichiometric films resembled that of a disordered ZnGeN 2 structure. Room temperature Raman spectra of near-stoichiometric films showed only the phonon density of states like features of a cation disordered ZnGeN 2 . Cathodoluminescence and photoluminescence spectra measured at different temperatures had similar features with peak emission wavelength at ~ 2 eV. In conclusion, the stoichiometry of ZnGeN 2 films can be widely tuned by tuning the MOCVD growth parameters. The surface morphology and the crystallinity of the films were found to have strong correlation with the Zn/(Zn+Ge) composition. The stoichiometric ZnGeN 2 films grown on GaN were demonstrated with uniform surface morphology and high crystalline quality. The results from this work will provide pathway to implement ZnGeN 2 in device structures.

Karim, Md Rezaul↗

DOE OSTI2020

Rafting-Enabled Recovery Avoids Recrystallization in 3D-Printing-Repaired Single-Crystal Superalloys

The repair of damaged Ni-based superalloy single-crystal turbine blades has been a long-standing challenge. Additive manufacturing by an electron beam is promising to this end, but there is a formidable obstacle: either the residual stress and γ/γ' microstructure in the single-crystalline fusion zone after e-beam melting are unacceptable (e.g., prone to cracking), or, after solutionizing heat treatment, recrystallization occurs, bringing forth new grains that degrade the high-temperature creep properties. Here, a post-3D printing recovery protocol is designed that eliminates the driving force for recrystallization, namely, the stored energy associated with the high retained dislocation density, prior to standard solution treatment and aging. The post-electron-beam-melting, pre-solutionizing recovery via sub-solvus annealing is rendered possible by the rafting (i.e., directional coarsening) of γ' particles that facilitates dislocation rearrangement and annihilation. The rafted microstructure is removed in subsequent solution treatment, leaving behind a damage-free and residual-stress-free single crystal with uniform γ' precipitates indistinguishable from the rest of the turbine blade. Finally, this discovery offers a practical means to keep 3D-printed single crystals from cracking due to unrelieved residual stress, or stress-relieved but recrystallizing into a polycrystalline microstructure, paving the way for additive manufacturing to repair, restore, and reshape any superalloy single-crystal product.

36 MATERIALS SCIENCE↗

NASA NTRS1986

High efficiency crystalline silicon solar cells

A review of the entire research program since its inception ten years ago is given. The initial effort focused on the effects of impurities on the efficiency of silicon solar cells to provide figures of maximum allowable impurity density for efficiencies up to about 16 to 17%. Highly accurate experimental techniques were extended to characterize the recombination properties of the residual imputities in the silicon solar cell. A numerical simulator of the solar cell was also developed, using the Circuit Technique for Semiconductor Analysis. Recent effort focused on the delineation of the material and device parameters which limited the silicon efficiency to below 20% and on an investigation of cell designs to break the 20% barrier. Designs of the cell device structure and geometry can further reduce recombination losses as well as the sensitivity and criticalness of the fabrication technology required to exceed 20%. Further research is needed on the fundamental characterization of the carrier recombination properties at the chemical impurity and physical defect centers. It is shown that only single crystalline silicon cell technology can be successful in attaining efficiencies greater than 20%.

Sah, C. Tang↗

DOE OSTI2022

Multiplication of freestanding III-V semiconductor membranes from a single wafer by alternating growth with amorphous graphene interlayer

Freestanding single-crystalline III-V compound semiconductors are important building blocks for functional devices due to their high electron mobilities, a wide range of bandgaps, and excellent optoelectronic properties. Despite efforts to produce such membranes by detaching epitaxial layers from donor wafers, current methods suffer from either slow processes or poor material quality. Here, we demonstrate a technique to grow and harvest multiple epitaxial membranes with extremely high throughput at the wafer scale. For this, a process to directly grow amorphous graphene on III-V substrates in metal-organic chemical vapor deposition reactors is developed, which enables an advanced remote epitaxy scheme comprised of multiple alternating layers of amorphous graphene and III-V epitaxial layers that can be formed by a single epitaxy run. Each epilayer in the multi-stack structure is then harvested by layer-by-layer peeling, producing multiple freestanding membranes with unprecedented throughput from a single wafer. Because amorphous graphene provides a weak van der Waals interface that allows peeling at the interface without damaging the epilayer or the substrate, wafers can be reused for subsequent membrane production. Therefore, this work represents a meaningful step toward high-throughput and low-cost production of single-crystal membranes that can be heterointegrated.

Han, Ne Myo↗

DOE OSTI2022

Multiplication of freestanding III-V semiconductor membranes from a single wafer by alternating growth with amorphous graphene interlayer

Han, Ne Myo↗

DOE OSTI2020

D retention and depth profile behavior for single crystal tungsten with high temperature neutron irradiation

Single crystalline W (tungsten) samples irradiated at 633, 963 and 1073 K by neutrons to a damage level of 0.1 dpa were exposed to a high-flux D (deuterium) plasma at 673, 873 and 973 K, respectively, in TPE (Tritium Plasma Experiment) at INL (Idaho National Laboratory). Deuterium desorption was analyzed by TDS (Thermal Desorption Spectroscopy), and D depth profiles were determined by NRA (Nuclear Reaction Analysis) at SNL (Sandia National Laboratories). HIDT (Hydrogen Isotope Diffusion and Trapping) simulation code was applied to evaluate D behavior for neutron-damaged W at higher temperature. The D retention at depths up to 3 f.tm for the neutron-damaged sample at 673 K was two orders of magnitude larger than that for undamaged tungsten, and its D desorption spectrum had a single broad stage at around 900 K. As the neutron irradiation/plasma exposure temperature increased, D retention was largely reduced, and the desorption temperature was increased to higher temperatures above 1100 K. The D depth profiles by NRA also showed D migration toward bulk by higher temperature irradiation, compared to undamaged W. The HIDT simulation indicated that the major binding energy of D was changed from 1.43 eV to 2.07 eV at higher neutron irradiation and plasma exposure temperatures, suggesting that some vacancies and small vacancy clusters would aggregate to form larger voids, or depopulation of weak traps at high D plasma exposure temperatures. It can be said that more stable trapping sites played dominant roles in the D retention at higher neutron irradiation and plasma exposure temperature. The binding energy by HIDT simulation was almost consistent with the reported value by TMAP, but the consideration of not only total D retention measured by TDS but also D depth profile by NRA led to the more accurate D behavior in neutron-damaged W.

36 MATERIALS SCIENCE↗

DOE OSTI2024

High Entropy Protected Sharp Magnetic Transitions in Highly Disordered Spinel Ferrites

How disorder affects magnetic ordering is always an intriguing question, and it becomes even more interesting in the recently rising high entropy oxides due to the extremely high disorder density. However, due to the lack of high-quality single crystal samples, the strong compositional disorder effect on magnetic transition has not been deeply investigated. In this work, we have successfully synthesized high-quality single crystalline high entropy spinel ferrites (Mg 0.2 Mn 0.2 Fe 0.2 Co 0.2 Ni 0.2 ) x Fe 3-x O 4 . Our findings from high-temperature magnetization and neutron diffraction experiments showed ferrimagnetic transitions at 748, 694, and 674 K for x values of 1, 1.5, and 1.8, respectively. Notably, the magnetic transition almost showed no broadening for x values of 1 and 1.5, compared to Fe 3 O 4 . Extended X-ray absorption fine structure measurements provided insights into the elemental distribution among the octahedral and tetrahedral sites. The random distribution of elements across these sites reduced the formation of local clusters and short-range orders, enhancing sample homogeneity and preserving the sharpness of the magnetic transition, despite bond length variation. Here, our study not only marks the first successful synthesis of an HEO bulk single crystal exhibiting long-range magnetic order but also sheds light on the interaction between high configurational entropy and magnetic orderings. This opens new avenues for future research and applications of magnetic high entropy oxides.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2025

Anisotropic magnetic behavior of Nd 3 ⁢ScBi 5 and Pr 3 ⁡ScBi 5 single crystals

Here, we report an investigation of the magnetic, thermodynamic, and transport properties of single-crystalline Nd 3 ⁢ScBi 5 and Pr 3 ⁡ScBi 5 . Both compounds crystallize in the hexagonal 𝑃⁢6 3 /𝑚⁢𝑐⁢𝑚 space group that is common to related materials with rare-earth atoms that form twisted kagome nets. Nd 3 ⁢ScBi 5 undergoes two successive antiferromagnetic transitions, at 𝑇 𝑁 =5.6K and 𝑇 2 =4.7K. When a magnetic field is applied along [100], both 𝑇 𝑁 and 𝑇 2 are suppressed with increasing field, and multiple metamagnetic transitions are observed; in-plane anisotropy is demonstrated by a slight broadening and movement of the metamagnetic transitions when the field is applied along [110]. For H ∥ [001], 𝑇 𝑁 and 𝑇 2 exhibit only a weak field dependence and metamagnetic transitions are not observed. The magnetoresistance and Hall effect respond strongly to the metamagnetic transitions and further motivate a detailed characterization of the magnetic structures under applied fields. Pr 3 ⁡ScBi 5 , in contrast, undergoes a single antiferromagnetic transition at 𝑇 𝑁 =5.3K and a single metamagnetic transition at higher fields. These findings place Nd 3 ⁢ScBi 5 and Pr 3 ⁡ScBi 5 as promising systems for exploring anisotropic magnetism and field-driven magnetic phase transitions in intermetallic compounds.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Nickel-based superalloy single crystals fabricated via electron beam melting

Additive manufacturing technologies have emerged as potential disruptive processes whose possible impacts range from supply chain logistics, prototyping, and novel materials synthesis. Numerous works illustrate the ability to control mi- crostructure in fusion based processes and a few recent authors have even produced single crystals. However, a number of open questions remain regarding the process window which enables printing of single crystals. Furthermore, it has been observed that these additively manufactured single crystals exhibit a preferred $\langle$011$\rangle$ secondary orientation. In this work we investigate fabrication conditions which enable printing of single crystals via electron beam melting. A space filling design of experiments is utilized to efficiently explore the fabrication space. Single crystals were success- fully obtained using both commercially available powders and custom melt alloys. Microstructures obtained via these exploratory experiments exhibited a continuum of columnar structures ranging from weakly textured polycrystals, near single crystal, and fully single crystalline material. Complex geometry experiments are performed to study the grain selection mechanism. We find that the grain selection mechanism is independent of the bulk scale geometry and must therefore by driven by local heat transfer and solidification dynamics. Furthermore, grain selection is shown to be driven by competing driving forces; one which prefers epitaxial growth and another which is driven by the imposed scan pattern geometry. Finally, a mechanism is proposed for the anomalous secondary orientation preference.

36 MATERIALS SCIENCE↗

DOE OSTI2025

One-Step Transfer of Symmetric and Asymmetric Contacts for Large-Scale 2D Electronics and Optoelectronics

Two-dimensional (2D) semiconductors are highly promising candidates for thin-film transistor applications due to their scalability, transferability, atomic thickness, and relatively high carrier mobility. However, a substantial performance gap remains between individual devices based on single-crystalline 2D films and wafer-scale integrated circuits, primarily due to defects introduced during conventional fabrication processes. Here, we report a diamond-assisted electrode transfer technique for the van der Waals integration of wafer-scale prefabricated electrode arrays onto 2D materials, enabling scalable electronics and optoelectronics. Implemented on metal–organic chemical vapor deposition-grown monolayer molybdenum disulfide, this method forms ultraclean metal–semiconductor interfaces, yielding field-effect transistors with excellent ohmic contacts, a low contact resistance of 400 Ω·μm, and a Schottky barrier height of only 9 meV. Furthermore, we demonstrate a scalable transistor array on monolayer molybdenum disulfide with excellent device performance uniformity, achieving an average field-effect mobility of 30 cm 2 V –1 s –1 and an on/off current ratio exceeding 105. Additionally, high photocurrent and responsivity were demonstrated in the array devices, showing their potential for excellent image detection. We further demonstrate the versatility of this technique by fabricating a Schottky diode array through a single-step transfer of asymmetric electrodes─low work function aluminum and high work function gold─onto monolayer tungsten diselenide. This approach provides a clean, effective solution for contact engineering in 2D materials, offering a viable pathway toward wafer-scale, high-performance 2D electronics, optoelectronics, and integrated circuits.

2D electronics↗