SEARCH · Search NASA
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
The purpose of this test was to characterize the LTC2054HVMPS5 (LTC2054) parameter degradation for total ionizing dose (TID) response. In the test, the device was exposed to low dose rate (LDR) irradiations using gamma radiation to account for the effects of enhanced low dose rate sensitivity (ELDRS) on the bipolar device.
The present conference on the effects of nuclear and space radiation on electronic hardware gives attention to topics in the basic mechanisms of radiation effects, dosimetry and energy-dependent effects, electronic device radiation hardness assurance, SOI/SOS radiation effects, spacecraft charging and space radiation, IC radiation effects and hardening, single-event upset (SEU) phenomena and hardening, and EMP/SGEMP/IEMP phenomena. Specific treatments encompass the generation of interface states by ionizing radiation in very thin MOS oxides, the microdosimetry of meson energy deposited on 1-micron sites in Si, total dose radiation and engineering studies, plasma interactions with biased concentrator solar cells, the transient imprint memory effect in MOS memories, mechanisms leading to SEU, and the vaporization and breakdown of thin columns of water.
After spending nearly six years in Earth's orbit twenty stacks consisting of radiation detectors and biological objects are now back on Earth. These Free Flyer Biostack experiments are part of the Long Duration Exposure Facility (LDEF). The major objective of the experiments are to investigate the biological effectiveness of single heavy ions of the cosmic radiation in various biological systems and to provide information about the spectral composition of the radiation field and the total dose received in the LDEF orbit. The preliminary analysis of the thermoluminescence dosimeters (TLD) yields maximum absorbed dose rates of 2.24 mGy day(exp -1) behind 0.7 g cm(exp -2) shielding and 1.17 mGy day(exp -1) behind 12 g cm(exp -2) shielding. A thermal neutron fluence of 1.7 n cm(exp -2)s(exp -1) is determined from the differences in absorbed dose for different isotopic mixtures of lithium. The results of this experiment on LDEF are especially valuable since LDEF stayed for almost six years in the prospected orbit of the Space Station Freedom.
The purpose of this lessons learned paper is to communicate the utility of shielding in small spacecraft planning for the support of mission assurance and reliability. Numerous SmallSats have been flying in polar low Earth orbit for science, communications, technology demonstrations, and imaging with academic, commercial, and government interests. Shielding has been part of mission assurance and reliability from the advent of long duration spacecraft missions. The Shields-1 CubeSat has been operating in polar low Earth orbit since 16 December 2018 with atomic number (Z)-grade radiation shielding and demonstrates shielding effectiveness. Shields-1 has collected a representative example of solar minimum data in 2019 with eight Teledyne µDosimeters over varying shielding effectivenesses. It serves as current experimental data and has been compared with NOVICE Shielding estimates using the AP8 – AE8 trapped radiation model with the Shields-1 CAD and generic CubeSat three unit (3U) models. Using NOVICE model radiation analysis coding, the shielding effectivenesses, based on a generic CubeSat 3U structure with four electronic boards, were estimated for aluminum wall thicknesses ranging from 0.204 cm to 4.44 cm (0.550 g/cm 2 to 12.0 g/cm 2 ). For modeled polar orbiting spacecraft, solar maximum total ionizing dose (TID) increases by nearly a magnitude for thin-walled aluminum 0.550-g/cm 2 - 0.686-g/cm 2 (0.204-cm – 0.254-cm) typical CubeSat structures. The shielding effectiveness estimated by NOVICE Sigma, which is a shielding sphere approximation around a detector, showed a linear relationship with wall thickness, which increased over the wall thickness by a ratio of 1.43 determined by linear regression analysis. Using NOVICE Adjoint Monte-Carlo Modeling of solar minimum and solar maximum with the inclusion of a worst-case solar particle event over a one-year mission without geomagnetic shielding, the TID for minimum and maximum conditions for a generic 3U with a wall thickness of 0.254 cm is 158 RAD and 1540 RAD, respectively. The modeled total solar maximum TID is over estimated, because at low orbital latitudes a spacecraft will have shielding from the Earth’s magnetic field. However, TID will still be significant at high latitudes over the poles, where a spacecraft is exposed in a solar particle event. In contrast to a thin-walled generic 3U CubeSat, the Shields-1 electronics enclosure has a shielding effectiveness of 21.3 g/cm 2 from NOVICE Sigma modeling and is expected to show reduced total ionizing dose increases during the present active Solar Cycle 25 period. Because solar particle events during solar maximum increase TID on electronic parts with thin-walled shielding in short periods of time, it is a mission assurance and reliability consideration on the mission value of the spacecraft versus adding shielding for risk reduction of premature spacecraft or instrument payload loss. Since the volumes of many instruments and system electronics have reduced with small spacecraft, shielding material costs and weight penalties have diminished. A small spacecraft project budget and schedule may limit traditional radiation-hardened part use and radiation testing requirements, where shielding can contribute to mission assurance and reliability with reduced costs.
Arkansas Power Electronics International (APEI), Inc., is developing a high-efficiency, radiation-hardened 3.8-kW SiC power supply for the PPU of Hall effect thrusters. This project specifically targets the design of a PPU for the high-voltage Hall accelerator (HiVHAC) thruster, with target specifications of 80- to 160-V input, 200- to 700-V/5A output, efficiency greater than 96 percent, and peak power density in excess of 2.5 kW/kg. The PPU under development uses SiC junction field-effect transistor power switches, components that APEI, Inc., has irradiated under total ionizing dose conditions to greater than 3 MRad with little to no change in device performance.
Shields-1, NORAD ID 43850,has been operating in polar low earth orbit since December 2018. The shielding has resulted in a lower total ionizing dose over time than typical aluminum thin-walled CubeSat structures. The reduced ionizing dosage caused by Shields-1 increases the reliability of commercial parts and reduces internal charging. Furthermore, the Shields-1 shielding reduces the ionizing particle fluence inside the spacecraft that contributes to the ionizing dose. NOVICE Sigma shielding software, using the (Aerospace Proton) AP8 –(Aerospace Electron) AE8 solar minimum trapped belt environment for a 1-year mission, estimates a 21.3 g/cm2 aluminum effective shielding for the Shields-1 electronics enclosure. This high areal density reduces not only the total number of energetic protons, but also reduces the number of ionizing particles over all modeled energies from the estimated shielded fluence for a 1-year mission. NOVICE Adjoint CAD modeling of the Shields-1 structure, with the detector located within the electronics enclosure, estimates that the total number of particles is reduced from 2.20x 10exp9 protons/cm2 to 1.52x 10exp8 protons/cm2, which represents 6.90% of the remaining particles(figure 1). By slowing down approximations of the integral proton fluence, a minimum proton threshold is estimated at 151 MeV. In comparison, a 0.204-cm aluminum thin-walled 3-unit (U) structure, with a 0.907 g/cm2 effective shielding, has 25.0% remaining particles and a minimum proton threshold of 36.2 MeV(figure 1). Proton energies that contribute to single event effects in radiation tolerant or higher semiconductor hardness are typically 100 MeV and higher. The Shields-1 electronics enclosure is estimated to attenuate energies: 100 MeV by 76.5%, 200 MeV by 61.7%, and 500 MeV by 63.0%(figure 2), when comparing the space environment proton differential fluence with the shielded differential fluence. The aluminum thin-walled structure is estimated to attenuate proton energies: 100 MeV by 13.7%, 200 MeV by 12.4%, and 500 MeV by 12.6%(figure 2), which are lower than for the Shields-1 electronics enclosure. The significant differences in attenuation between the Shields-1 electronics enclosure and aluminum thin-walled 3U structure show the additional utility of increasing shielding effectiveness for reducing the numbers of energetic protons that contribute to single event effects.
The two main objectives of this trade study are characterizing the mission radiation environment for multiple Design Reference Missions (DRM) and analysis of radiation effects on avionics with the goal of producing radiation tolerant Neuromorphic Computing processor chips with innovative radiation-induced fault mitigation. The NASA process for defining radiation requirements for flight avionics is applied to this domain. The effects of trapped protons and electrons in the Van Allen radiation belts predominates in Low-Earth-Orbit (LEO) and the solar wind, solar flares and Galactic Cosmic Rays (GCRs) are the dominant radiation challenge in the open space between the planets of our solar system. The nature and energy of the particles that cause circuit upset and failure is very different in the two regimes. Two results are produced from the radiation models: determining the Total Integrated Dose (TID) experienced by avionics for a given DRM and predicting the Single Event Effects (SEE) rates for avionics during high rate exposure. These tools are applied to existing semiconductors and can be used for predicting the radiation performance of future semiconductors based on early radiation testing of new devices.
An experiment on the Microelectronics and Photonics Test Bed (MPTB) was testing lield programmable gate arrays using spot shields to extend the life of some of the devices being tested. It was expected that the unshielded parts would fail from a total ionizing dose (TID) and yet the opposite occurred. The data show that the devices failing from the TID effects are those with the spot shields attached. This effort is to determine the mechanism by which the environment is interacting with the high-Z material to enhance the TID in these field programmable gate arrays.
The JEDEC JESD57 test standard, Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy-Ion Irradiation, is undergoing its first revision since 1996. This presentation will provide an overview of some of the key proposed updates to the document.
PURPOSE: We obtained bone tissue to evaluate the collateral effects of experiments designed to investigate molecular mechanisms of radio-adaptation in a mouse model. Radio-adaptation describes a process by which the prior exposure to low dose radiation can protect against the toxic effect of a subsequent high dose exposure. In the radio-adaptation experiments, C57Bl/6 mice were exposed to either a Sham or a priming Low Dose (5 cGy) of Cs-137 gamma rays before being exposed to either a Sham or High Dose (6 Gy) 24 hours later. ANALYSIS: Bone tissue were obtained from two experiments where mice were sacrificed at 3 days (n=3/group, 12 total) and at 14 days (n=6/group, 24 total) following high dose exposure. Tissues were analyzed to 1) evaluate a radio-adaptive response in bone tissue and 2) describe cellular and microstructural effects for two skeletal sites with different rates of bone turnover. One tibia and one lumbar vertebrae (LV2), collected at the 3-day time-point, were analyzed by bone histomorphometry and micro-CT to evaluate the cellular response and any evidence of microarchitectural impact. Likewise, tibia and LV2, collected at the 14-day time-point, were analyzed by micro-CT alone to evaluate resulting changes to bone structure and microarchitecture. The data were analyzed by 2-way ANOVA to evaluate the effects of the priming low dose radiation, of the high dose radiation, and of any interaction between the priming low and high doses of radiation. Bone histomorphometry was performed in the cancellous bone (aka trabecular bone) compartments of the proximal tibial metaphysis and of LV2. RESULTS: Cellular Response @ 3 Days The priming Low Dose radiation decreased osteoblast-covered bone perimeter in the proximal tibia and the total cell density in the bone marrow in the LV2. High Dose radiation, regardless of prior exposure to priming dose, dramatically reduced total cell density in bone marrow of both the long bone and vertebra. However, in the proximal tibia, High Dose radiation increased the osteoclast-covered bone perimeters, the density of adipocytes in bone marrow, and the area of bone marrow occupied by fat cells -- while in the LV2, adipocytes were rare and not stimulated by High Dose radiation. In an unexpected response, High Dose radiation dramatically increased (10-fold) osteoblast-covered bone perimeter in the LV2.
Data from a MOSFET matrix on two JPL (CIT Jet Propulsion Laboratory) CRRES (Combined Release and Radiation Effects Satellite) chips, each behind different amounts of shielding, are presented. Space damage factors are nearly identical to ground test values for pMOSFETs. The results from neighboring rows of MOSFETs show similar radiation degradation. The SRD (Space Radiation Dosimeter) is used to measure the total dose accumulated by the JPL chips. A parameter extraction algorithm that does not underestimate threshold voltage shifts is used. Temperature effects are removed from the MOSFET data.
Permanent and transient effects are discussed that are induced in linear integrated circuits by space radiation. Recent developments include enhanced damage at low dose rate, increased damage from protons due to displacement effects, and transients in digital comparators that can cause circuit malfunctions.
The development of crystal handling techniques for reflection infrared spectroscopy and methods for the fabrication and testing of tensile specimens are discussed. Data from mechanical, ac and dc electrical, and electron paramagnetic resonance studies conducted to determine the effects of 0.1-MeV and 1.0-MeV electron radiation on Mylar, Kapton, Ultem, and metal-doped Ultem are presented. Total doses ranging from 1 X 10 to the 8 rads to 1 X 10 to the 10 rads and dose rates from 5 X 10 to the 7 rads/hr to 1 X 10 to the 9 rads/hr were employed. The results of a study on the effects of aircraft service-environment fluids on Ultem are also reported. The weights and mechanical properties of Ultem were evaluated before and after exposure to water, JP4, Skydrol, an antifreeze, and a paint stripper.
Document presents data on and analysis of radiation hardness of various semiconductor devices. Data specifies total-dose radiation tolerance of devices. Volume 1 of report covers diodes, bipolar transistors, field effect transistors, silicon controlled rectifiers and optical devices. Volume 2 covers integrated circuits. Volume 3 provides detailed analysis of data in volumes 1 and 2.
Analog Devices’ AD654 was tested for total ionizing dose (TID) response beginning on February 13, 2017. This device has the Radiation Effects and Analysis Group Identification (REAG ID) number 16-036. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) could be determined.
This paper reports recent Total Ionizing Dose (TID) test results obtained at JPL. Several device samples were analyzed exhibiting significant failure levels and ELDRS effects under biased and unbiased condition.
The considered investigation is concerned with the study of the total-dose degradation mechanisms in an IIL analog to digital (A/D) converter. The A/D converter is a 10 digit device having nine separate functional units on the chip which encompass several hundred transistors and circuit elements. It was the objective of the described research to find the radiation sensitive elements by a systematic search of the devices on the LSI chip. The employed technique using a scanning electron microscope to determine the functional blocks of an integrated circuit which are sensitive to ionizing radiation and then progressively zeroing in on the soft components within those blocks, proved extremely successful on the AD571. Four functional blocks were found to be sensitive to radiation, including the Voltage Reference, DAC, IIL Clock, and IIL SAR.
The purpose of this testing was to obtain total ionizing dose (TID) information about commercial off-the-shelf (COTS) n-channel and p-channel MOFETs that are being considered for use on the Goddard Modular SmallSat Architecture (GMSA) Adapter board in an H-Bridge circuit to drive magnetorquers. Testing took place at NASA Goddard Space Flight Center’s (GSFC) Radiation Effects Facility using the gamma source. Testing occurred from July 31st – August 1st, 2018.