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Samples of epitaxial GaAs grown on (100) Si substrates using molecular beam epitaxy were annealed at four different temperatures, from 800 to 950 C. Following annealing, the samples were analyzed using secondary ion mass spectrometry. Depth profiles of Ga, As, and Si reveal optimum conditions for annealing, and place a lower limit on a damage threshold for GaAs/Si substrates.
Several alloys (Hastelloy X, AISI 347, A-286 bolts, Inconel 718, Al 7039-T63 and Ti-5Al-2.5Sn ELI) were irradiated in liquid nitrogen (140 R) to neutron fluences between 10 to the 17th power and 10 to the 19th power nvt (E greater than 1.0 Mev). After irradiation, tensile properties were obtained in liquid nitrogen without permitting any warmup except for some specimens which were annealed at 540 R. The usual trend of radiation damage typical for materials irradiated at and above room temperature was observed, such as an increase in strength and decrease in ductility. However, the damage at 140 R was greater because this temperature prevented the annealing of radiation-induced defects which occurs above 140 R.
The superior radiation resistance of InP over other solar cell materials such as Si or GaAs has prompted the development of InP cells for space applications. The early research on radiation effects in InP was performed by Yamaguchi and co-workers who showed that, in diffused p-InP junctions, radiation-induced defects were readily annealed both thermally and by injection, which was accompanied by significant cell recovery. More recent research efforts have been made using p-InP grown by metalorganic chemical vapor deposition (MOCVD). While similar deep level transient spectroscopy (DLTS) results were found for radiation induced defects in these cells and in diffused junctions, significant differences existed in the annealing characteristics. After injection annealing at room temperature, Yamaguchi noticed an almost complete recovery of the photovoltaic parameters, while the MOCVD samples showed only minimal annealing. In searching for an explanation of the different annealing behavior of diffused junctions and those grown by MOCVD, several possibilities have been considered. One possibility is the difference in the emitter structure. The diffused junctions have S-doped graded emitters with widths of approximately 0.3 micrometers, while the MOCVD emitters are often doped with Si and have widths of approximately 300A (0.03 micrometers). The difference in the emitter thickness can have important effects, e.g. a larger fraction of the total photocurrent is generated in the n-type material for thicker emitters. Therefore the properties of the n-InP material may explain the difference in the observed overall annealing behavior of the cells.
The metamorphic, shock, and brecciation history of 18 eucrites, 13 howardites, 6 diogenites, and 15 mesosiderites is investigated via induced thermoluminescence measurements performed on them. The eucrites show a 15-fold range of TL sensitivities, which correlate with petrographic indicators of metamorphic intensity. The temperature of the dominant TL peak observed for basaltic meteorites, and experiments in which four eucrites with diverse petrographic properties were annealed at various temperatures in the laboratory, suggests that the metamorphic equilibration temperatures for most basaltic meteorites were not more than 800 C. Assuming this temperature was typical of conditions during metamorphism, then burial depths for type-above-5 eucrites were greater than 350 m and less than 50 m for type-2 eucrites. Since TL peak temperatures are related to the degree of disorder in the Al, Si chain in feldspar, the present data provide independent evidence for very slow cooling rates for mesosiderites and for the slower cooling rates for some cumulate eucrites relative to equilibrated noncumulate eucrites.
Dust in the ISM carries an "organic" signature in form of a distinct group of C-H stretching bands, both in emission and absorption, around 3.4 micrometers. These bands agree with the symmetrical and asymmetrical C-H stretching vibrations of aliphatic -CH2- entities and are thought to be associated with organic molecules on the surface of dust grains. We show that this interpretation is inconsistent with laboratory experiments. Synthetic MgO and natural olivine single crystals, grown from a CO/CO2/H2O-saturated melt, exhibit the same C-H stretching bands but those bands are clearly associated with C-H entities inside the dense mineral matrix. The multitude of C-H stretching bands suggests that the C-H bonds arise from polyatomic C(sub n) entities. We heated the MgO and olivine crystals to temperatures between 550-1000 K to pyrolyze the C-H bonds and to cause the C-H stretching bands to disappear. Upon annealing at moderate temperatures between 300-390 K the C-H stretching bands reappear within a few days to weeks. The C-H stretching band intensity increases linearly with the square root of time. Thus, while the pyrolysis broke the C-H bonds and caused the H to disperse in the mineral matrix, the H atoms (or H2 molecules) are sufficiently mobile to return during annealing and reestablish the C-H bonds. Dust grains that condense in a gas-laden environment (outflow of late-stage stars or in dense molecular clouds) probably incorporate the same type of Cn-H entities. Imbedded in and in part bonded to the surrounding mineral matrix, the Cn-H entities display C-H stretching bands in the 3.4 micrometer region, but their lower frequency librational modes are so strongly coupled to the lattice modes that they broaden excessively and thus become unobservable.
A solid-phase epitaxy has been developed for the growth of CoSi2 films on Si (111) with no observable pinholes (1000/sq cm detection limit). The technique utilizes room-temperature codeposition of Co and Si in stoichiometric ratio, followed by the deposition of an amorphous Si capping layer and subsequent in situ annealing at 550-600 C. CoSi2 films grown without the Si cap are found to have pinhole densities of (1-10) x 10 to the 7th/sq cm when annealed at similar temperatures. A CF4 plasma-etching technique was used to increase the visibility of the pinholes in the silicide layer.
SEM, thermogravimetric analysis, powder X-ray diffraction,and measurements of electrical resistivity and magnetic susceptibility, are presently used to characterize the influence of sintering temperature, sintering and annealing atmospheres, and quench-rate on the properties of the YBa2Cu3Oy superconducting oxide. It is established that annealing in oxygen, together with slow cooling rates, are required for preparation of high-Tc superconductors with sharp transitions; rapid quenching from high temperature does not yield good superconductors, due to low oxygen content.
Experimentally produced analogues of porphyritic olivine (PO) chondrules in ordinary chondrites provide an important insight into chondrule formation processes. We have studied experimental samples with PO textures grown at three different cooling rates (2, 5 and 100 C/h), and samples that have been annealed at high temperatures (1000-1200 C) subsequent to cooling. These are compared with natural chondrules of similar composition and texture from the ordinary chondrites Semarkona (LL3.0) and ALH 81251 (LL3.3). Zoning properties of olivine grains indicate that the Semarkona chondrules cooled at comparable rates to the experiments. Zoning in olivine from chondrules in ALH 81251 is not consistent with cooling alone but indicates that the chondrules underwent an annealing process. Chromium loss from olivine is very rapid during annealing and calculated diffusion coefficients for Cr in olivine are very similar to those of Fe-Mg interdiffusion coefficients under the same conditions. Annealed experimental samples contain an aluminous, low-Ca pyroxene which forms by reaction of olivine and liquid. No similar reaction texture is observed in ALH 81251 chondrules, and this may be evidence that annealing of the natural samples took place at considerably lower temperatures than the experimental analogues. The study supports the model of chondrule formation in a cool nebula and metamorphism of partly equilibrated chondrites during reheating episodes on the chondrite parent bodies.
Defects in silicon p-n solar cells with Li diffused N region produced by electron irradiation and spontaneously annealed at room temperature interpreted as Li ions
AgGaSe2 has been grown, annealed, and characterized for the mid-IR. Characterization includes measurement of the average power-limiting factors including absorption and the variation of the refractive indices with temperature. Using specially annealed crystals 20 mm long and a Ho:YAG pump, parametric amplification at 3.39 microns has achieved a gain of 2.9 with a peak power input of only 8 MW/sq cm.
Vapor-deposited amorphous water ice when warmed above the glass transition temperature (120-140 K), is a viscous liquid which exhibits a viscosity vs temperature relationship different from that of liquid water at room temperature. New studies of thin water ice films now demonstrate that viscous liquid water persists in the temperature range 140-210 K. where it coexists with cubic crystalline ice. The liquid character of amorphous water above the glass transition is demonstrated by (1) changes in the morphology of water ice films on a nonwetting surface observed in transmission electron microscopy (TEM) at around 175 K during slow warming, (2) changes in the binding energy of water molecules measured in temperature programmed desorption (TPD) studies, and (3) changes in the shape of the 3.07 micrometers absorption band observed in grazing angle reflection-absorption infrared spectroscopy (RAIRS) during annealing at high temperature. whereby the decreased roughness of the water surface is thought to cause changes in the selection rules for the excitation of O-H stretch vibrations. Because it is present over such a wide range of temperatures, we propose that this form of liquid water is a common material in nature. where it is expected to exist in the subsurface layers of comets and on the surfaces of some planets and satellites.
Crystalline melt inclusions (MIs) in Archean zircons can potentially constrain the evolution of magmatic processes. However, to obtain a homogeneous glassy MI representative of the parent melt, devitrified MIs must be heated at temperatures above the liquidus. Although, it is well known that radiation damaged domains in MI-host zircon undergo temperature-time dependent annealing, the effects of annealing on zircon stable isotope and trace element compositions has received less attention. In this study, we heated multiple aliquots of low-magnetism zircons with relatively low levels of radiation damage (Deff<9.6x1014 α-events/mg) from a 3.304 Ga tonalite gneiss xenolith from the Barberton greenstone belt (sample B87-18; Kamo and Davis, 1994) in an internally-heated pressure vessel at 0.4GPa and 1000–1200°C. Zircons were imaged by SEM (CL, BSE) to determine the zoning patterns around the MIs. The radiation damage preserved in the heated and unheated zircons was determined by measuring broadening of the 3(SiO4) Raman stretching band of zircon (FWHM). Oxygen isotope ratios (δ18O), OH/O ratios, and trace and rare earth element (TREE) concentrations were measured in the zircons and MIs using SIMS. The FWHM and Raman shift of the zircon 3(SiO4) band show a systematic increase of zircon crystallinity with increasing experimental temperature. Despite increasing crystallinity, the 3(SiO4) FWHM is not correlated with δ18O(Zrn) values in the heated or unheated zircons, suggesting that δ18O was not altered by laboratory heating in these low initial radiation damage zircons. FWHM and OH/O are positively correlated in both heated and unheated zircons. The unheated zircons have the largest FWHM and OH/O (OH/OMAX=3.5×10-4) suggesting that H2O was lost during experimental heating due to the progressive annealing of radiation-damaged domains in the zircons. Zircon TREE concentrations and FWHM values are not correlated despite the presence of TREE altered domains in both the heated and unheated zircons. Our results demonstrate that pre-experimental zircon TREE concentrations and δ18O(Zrn) remain intact during laboratory heating of crystalline MIs in zircon, while secondary H2O hosted in radiation damaged domains is partially lost. Thus, MIs in low initial radiation damage Archean zircon are a potentially viable tool for constraining melt compositions.
Damage in ZrF4-BaF2-LaF3 glass induced by high-energy electrons was studied by ESR and optical spectroscopy. An optical absorption band at 314 nm in the irradiated glass annealed rapidly above about 50 C, probably by a second-order reaction at room temperature; the ESR lines annealed very slowly at room temperature.
It has been found that very small vapor-deposited catalytically active metal particles in the 1-2 nm size range on metal oxide substrates can undergo significant changes when they are exposed to gases such as oxygen or air, or even when allowed to 'anneal' at room temperature (RT) under vacuum conditions. The present investigation is concerned with continued in-situ gas exposures of as-deposited, 1 to 2 nm size palladium particles on MgO to air, oxygen, nitrogen, hydrogen, CO, and water vapor at RT. It is found that the low-pressure exposure to various gases at RT can significantly affect small palladium particles supported on MgO surfaces. Exposure to oxygen for 3 min at 0.0002 m bar produces a considerable amount of coalescence, flattening of the particles, and some distinct crystallographic particle shapes.
Thick films of YBa2Cu3O(sub 7-x) have been deposited on highly polished alumina substrates by the screen printing technique. To optimize the post-printing heat treatment, the films were baked at various temperatures for different lengths of time and oxygen-annealed at a lower temperature. The resulting films were characterized by electrical resistivity measurements, x-ray diffraction, and optical and scanning electron microscopy. Properties of the films were found to be highly sensitive to the post-printing thermal treatment. Films baked for 15 min at 1000 C in oxygen were hard, adherent, near single phase, and superconducting with T(sub c)(onset) approx 96 K, T(sub c)(zero) approx 66 K and Delta T sub c (10 to 90 percent) approx 10 K.
Thick films of YBa2Cu3O(sub 7-x) have been deposited on highly polished alumina substrates by the screen printing technique. To optimize the post-printing heat treatment, the films were baked at various temperatures for different lengths of time and oxygen-annealed at a lower temperature. The resulting films were characterized by electrical resistivity measurements, X-ray diffraction, and optical and scanning electron microscopy. Properties of the films were found to be highly sensitive to the post-printing thermal treatment. Films baked for 15 min at 1000 C in oxygen were hard, adherent, near single phase, and superconducting with T(sub c) (onset) approx 96 KK, T(sub c) (zero) approx 66 K and Delta T sub c (10 to 90 percent) approx 10 K.
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Annealing in a temperature gradient was used to produce a structure of continuous columnar grains in alloy 713 C made by extrusion of prealloyed powder. The columnar-grained specimens had tensile strengths within plus or minus 5 percent of those of the as-cast alloy at 760 C and 980 C but were significantly stronger at room temperature. Stress-rupture tests at 760 C and 980 C showed lives scattered from 17 to 376 percent of those of as-cast 713 C tested under the same conditions. X-ray diffraction studies showed the large grains formed upon annealing to have a well-defined texture, although the as-extruded material had none.