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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Gallium oxide (Ga 2 O 3 ) energy dependent scintillation response to fast neutrons and flash gamma-rays

Gallium oxide is a newly emerged ultrawide bandgap (4.9 eV) semiconductor that is suitable as a combined electronics and radiation detection platform. We have experimentally demonstrated fast neutron and gamma-ray scintillation from Czochralski-grown β-Ga 2 O 3 in a recent series (October 2023) of experiments at the unmoderated pulsed neutron spallation source located at the Los Alamos Neutron Science Center. Using the neutron time-of-flight (TOF) technique and a fast-gated intensified CCD camera, we observed energy-dependent neutron scintillation for neutron energies ranging from 1 to 400 MeV, including the 14.1 MeV neutron energy relevant to D–T fusion. Neutron flux is quantified and calibrated by cascading the scintillator after the fission chamber, enabling a detailed analysis of temporal and energy-dependent characteristics of the scintillation events. Further, a pronounced scintillation signal from the spallation gamma flash with a temporal full width of half maximum of ~4 ns is indicative of the material’s rapid response. Neutron energy dependent scintillation is observed using the TOF method at a 22.6-m distance from the neutron source. These results highlight the possibility of developing a Ga 2 O 3 based fusion neutron diagnostic platform integrated with both scintillation and electronics functions on the integrated chip scale.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Optical and microstructural studies of erbium-doped TiO 2 thin films on silicon, SrTiO 3 , and sapphire

Rare-earth ion doped oxide thin films integrated on silicon substrates provide a route toward scalable, chip-scale platforms for quantum coherent devices. Erbium-doped TiO 2 is an attractive candidate: the Er 3+ optical transition is compatible with C-band optical fiber communications, while TiO 2 is an insulating dielectric compatible with silicon process technology. Through structural and optical studies of Er-doped TiO 2 thin films grown via molecular beam deposition on silicon, SrTiO 3 , and sapphire substrates, we have explored the impact of polycrystallinity and microstructure on the optical properties of the Er emission. Comparing polycrystalline TiO 2 (rutile)/Si with single-crystalline TiO 2 (rutile)/r-sapphire and polycrystalline TiO 2 (anatase)/Si with single-crystalline TiO 2 (anatase)/SrTiO 3 , we observe that the inhomogeneous linewidth (Γ inh ) of the most prominent peak in the Er spectrum (the Y 1 –Z 1 transition, 1520 and 1533 nm in rutile and anatase TiO 2 ) is significantly narrower in the polycrystalline case. This implies a relative insensitivity to extended structural defects and grain boundaries in such films (as opposed to, e.g., point defects). We show that the growth of an undoped, underlying TiO 2 buffer on Si can reduce Γ inh by a factor of 4–5. Expectedly, Γ inh also reduces with decreasing Er concentrations: we observe a ∼2 order of magnitude reduction from ∼1000 ppm Er to ∼10 ppm Er. Γ inh then gets limited to a residual value of ∼5 GHz that is insensitive to further reduction in the Er concentration. Based upon the above results, we argue that the optical properties in these thin films are limited by the presence of high “grown-in” point defect concentrations.

Chemical elements↗
DOE OSTI2025

Fast and efficient Sb-based type-II phototransistors integrated on silicon

Increasing the energy efficiency and reducing the footprint of on-chip photodetectors enable dense optical interconnects for emerging computational and sensing applications. While heterojunction phototransistors (HPTs) exhibit high energy efficiency and negligible excess noise factor, their gain-bandwidth product (GBP) has been inferior to that of avalanche photodiodes at low optical powers. Here, we demonstrate that utilizing type-II energy band alignment in an Sb-based HPT results in six times smaller junction capacitance per unit area and a significantly higher GBP at low optical powers. These type-II HPTs were scaled down to 2 μm in diameter and fully integrated with photonic waveguides on silicon. Thanks to their extremely low dark current and high internal gain, these devices exhibit a GBP similar to the best avalanche devices (∼270 GHz) but with one order of magnitude better energy efficiency. Their energy consumption is about 5 fJ/bit at 3.2 Gbps, with an error rate below 10−9 at −25 dBm optical power at 1550 nm. These features suggest new opportunities for creating highly efficient and compact optical receivers based on phototransistors with type-II band alignment.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Designs for scalable construction of hybrid quantum photonic cavities

Nanophotonic resonators are central to numerous applications, from efficient spin–photon interfaces to laser oscillators and precision sensing. A leading approach consists of photonic crystal (PhC) cavities, which have been realized in a wide range of dielectric materials. However, translating proof-of-concept devices into a functional system entails a number of additional challenges, inspiring new approaches that combine resonators with wavelength-scale confinement and high quality factors; scalable integration with integrated circuits and photonic circuits; electrical or mechanical cavity tuning; and, in many cases, a need for heterogeneous integration with functional materials such as III–V semiconductors or diamond color centers for spin–photon interfaces. Here we introduce a concept that generates a finely tunable PhC cavity at a selected wavelength between two heterogeneous optical materials whose properties satisfy the above requirements. The cavity is formed by stamping a hard-to-process material with simple waveguide geometries on top of an easy-to-process material consisting of dielectric grating mirrors and active tuning capability. We simulate our concept for the particularly challenging design problem of multiplexed quantum repeaters based on arrays of cavity-coupled diamond color centers, achieving theoretically calculated unloaded quality factors of 106, mode volumes as small as 1.2(λ/neff)3, and maintaining >60% total on-chip collection efficiency of fluorescent photons. We further introduce a method of low-power piezoelectric tuning of these hybrid diamond cavities, simulating optical resonance shifts up to ∼760 GHz and color center fluorescence tuning of 5 GHz independent of cavity tuning. These results will motivate integrated photonic cavities toward larger scale systems-compatible designs.

Greenspon, Andrew S. (ORCID:0000000296317568)↗
DOE OSTI2025

Loss tangent fluctuations due to two-level systems in superconducting microwave resonators

Superconducting microwave resonators are critical to quantum computing and sensing technologies. Additionally, they are common proxies for superconducting qubits when determining the effects of performance-limiting loss mechanisms such as from two-level systems (TLSs). The extraction of these loss mechanisms is often performed by measuring the internal quality factor Qi as a function of power or temperature. In this work, we investigate large temporal fluctuations of Qi at low powers over periods of 12–16 h (relative standard deviation σQi/Qi=13%). These fluctuations are ubiquitous across multiple resonators, chips, and cooldowns. We are able to attribute these fluctuations to variations in the TLS loss tangent due to two main indicators. First, measured fluctuations decrease as power and temperature increase. Second, for interleaved measurements, we observe correlations between low- and medium-power Qi fluctuations and an absence of correlations with high-power fluctuations. Agreement with the TLS loss tangent mean is obtained by performing measurements over a time span of a few hours. We hypothesize that, in addition to decoherence, due to coupling to individual near-resonant TLS, superconducting qubits are affected by these observed TLS loss tangent fluctuations.

Vallières, André [Northwestern U.; Fermilab] (ORCI↗
DOE OSTI2025

A compact low-level RF control system for advanced concept compact electron linear accelerator

A compact low-level RF (LLRF) control system based on RF system-on-chip (RFSoC) technology has been designed for the Advanced Concept Compact Electron Linear-accelerator (ACCEL) program, which has challenging requirements in both RF performance and size, weight, and power consumption (SWaP). The compact LLRF solution employs the direct RF sampling technique of RFSoC, which samples the RF signals directly without any analog upconversion and downconversion. Compared with the conventional heterodyne based architecture used for the LLRF system of a linear accelerator (LINAC), the elimination of analog mixers can significantly reduce the size and weight of the system, especially with LINAC requiring a larger number of RF channels. Based on the requirements of ACCEL, a prototype LLRF platform has been developed, and the control schemes have been proposed. The prototype LLRF system demonstrated magnitude and phase fluctuation levels below 1% and 1° on the flattop of a 2 μs RF pulse. The LLRF control schemes proposed for ACCEL are implemented with a prototype hardware platform. In conclusion, this paper will introduce the new compact LLRF solution and summarize a selection of experimental test results of the prototype itself and with the accelerating structure cavities designed for ACCEL.

Liu, C. [SLAC National Accelerator Laboratory (SLA↗
DOE OSTI2025

Direct integration of atomic precision advanced manufacturing into middle-of-line silicon fabrication

Atomic precision advanced manufacturing (APAM) dopes silicon with enough carriers to change its electronic structure and can be used to create novel devices by defining metallic regions whose boundaries have single-atom abruptness. Incompatibility with the thermal and lithography process requirements for gated silicon transistor manufacturing have inhibited exploration of both how APAM can enhance CMOS performance and how transistor manufacturing steps can accelerate the discovery of new APAM device concepts. In this work, we introduce an APAM process that enables direct integration into the middle of a transistor manufacturing workflow. We show that a process that combines sputtering and annealing with a hardmask preserves a defining characteristic of APAM, a doping density far in excess of the solid solubility limit, while trading another, the atomic precision, for compatibility with manufacturing. The electrical characteristics of a chip combining a transistor with an APAM resistor show that the APAM module has only affected the transistor through the addition of a resistance and not by altering the transistor. This proof-of-concept demonstration also outlines the requirements and limitations of a unified APAM tool, which could be introduced into manufacturing environments, greatly expanding access to this technology and inspiring a new generation of devices with it.

Chemical vapor deposition↗
DOE OSTI2025

Injection locking and coupling dynamics in superconducting nanowire-based cryogenic oscillators

Oscillators designed to function at cryogenic temperatures play a critical role in superconducting electronics and quantum computing by providing stable, low-noise signals with minimal energy loss. Here, in this work, we present a comprehensive numerical study of injection locking and mutual coupling dynamics in superconducting nanowire (ScNW)-based cryogenic oscillators. Using the design space of a standalone ScNW-based oscillator, we investigate two critical mechanisms that govern frequency synchronization and signal coordination in cryogenic computing architectures: (1) injection locking induced by an external AC signal with a frequency near the oscillator's natural frequency, and (2) the mutual coupling dynamics between two ScNW oscillators under varying coupling strengths. We identify key design parameters—such as shunt resistance, nanowire inductance, and coupling strength—that govern the locking range. Additionally, we examine how the amplitude of the injected signal affects the amplitude of the locked oscillation, offering valuable insights for power-aware oscillator synchronization. Furthermore, we analyze mutual synchronization between coupled ScNW oscillators using capacitive and resistive coupling elements. Our results reveal that the phase difference between oscillators can be controlled by tuning the coupling strength, enabling programmable phase-encoded information processing. These findings could enable building ScNW-based oscillatory neural networks, synchronized cryogenic logic blocks, and on-chip cryogenic resonator arrays.

Artificial neural networks↗
DOE OSTI2026

Modulating surface acoustic wave generation through superconductivity

Surface acoustic waves (SAWs), with their five orders-of-magnitude slower propagation velocity, allow for considerably shorter wavelengths at the same frequency compared to electromagnetic waves. The short wavelengths allow for device miniaturization and on-chip integration. The generic design of these devices involves piezoelectric substrates with comb-like arrays of Al or Au electrodes known as interdigitated transducers (IDTs) deposited on the surface. However, Al and Au both have shortcomings at the cryogenic temperatures required for quantum applications, namely, the formation of two-level systems and the lack of superconductivity perpetuating Ohmic losses, respectively. In this work, SAWs are generated in the high-MHz to low-GHz range using niobium nitride (NbN) interdigitated transducers and Bragg reflectors. We demonstrate the fabrication of acoustic devices through photolithography and reactive ion etching. The sharp transition between superconducting and normal states and the corresponding change in SAW transmission allows for fine control of the “on” (superconducting) and “off” (normal) states of NbN, with a ΔT = 1 K separating the transmission minimum and maximum. We demonstrate a 16× difference in transmission between the “on” and “off” states of the device. The SAW transmission behavior mirrors the change in resistance of NbN at its T c . These findings open up new possibilities for the integration of NbN SAW resonators into existing quantum architectures based on NbN and a method for adjusting transmission properties independent of applied voltage.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Electric spiking activity in epithelial cells

Epithelial cells (human keratinocyte cells and the canine MDCK cell line), traditionally viewed as electrically non-self-excitable and involved primarily in physiological functions such as barrier presentation, absorption, secretion, and protection, are shown here to exhibit traveling extracellular electric charge when they recover from spatially focused, laser-induced wounding of confluent monolayers cultured on a multielectrode array chip. Voltage spikes measured on these electrodes display depolarization, repolarization, and hyperpolarization phases with amplitudes similar to the action potentials of neurons but with the markedly slower duration of 1 to 2 s. Some propagate distances up to hundreds of μm from the wound with a mean speed of around 10 mm s −1 . Generation and transmission of bioelectric signals are significantly influenced by the perturbation of mechanosensitive cationic ion channels. These direct measurements confirm bioelectric signaling that previous work has hypothesized to regulate epithelial cell development and may have relevance to the frequency parameter selection of bioelectric devices.

Science & Technology - Other Topics↗
DOE OSTI2024

Frequency-domain computing using nonlinear acoustic-wave device on lithium niobate

Abstract Multiply-accumulation are crucial computing operations in signal processing, numerical simulations, and machine learning. In recent years, optical analog approaches have demonstrated higher computing performance and better power efficiency than their digital counterparts. However, analog computing chips usually need large areas and complex structures for parallel computing, as a single device element only executes one computing operation at a single time. Here, we demonstrate frequency-domain computing using the nonlinear acoustic-wave devices on lithium niobate, featuring a normalized external second-harmonic generation conversion efficiency of ~ 5.7 × 10-4 W-1. The second-order sum-frequency nonlinear process of lithium niobate enables multiplication of inputs encoded in the frequency domain. Compared to the analog schemes, our device features a notably simpler design, and nanofabrication requires only one lift-off. Using a single acoustic-wave device within an area of 0.03 mm2, we can simultaneously conduct over 130,000 multiply-accumulation operations. Our acoustic-wave device shows applications in real and complex vector convolutions and image processing. This demonstration sets the stage for experimental realizations into frequency-domain integrated nonlinear acoustic computing systems, potentially shaping future developments in acoustic neural networks and quantum computing.

chai, mingzhao (ORCID:0009000466226341)↗
DOE OSTI2024

Embedded FPGA developments in 130 nm and 28 nm CMOS for machine learning in particle detector readout

Embedded field programmable gate array (eFPGA) technology allows the implementation of reconfigurable logic within the design of an application-specific integrated circuit (ASIC). This approach offers the low power and efficiency of an ASIC along with the ease of FPGA configuration, particularly beneficial for the use case of machine learning in the data pipeline of next-generation collider experiments. An open-source framework called "FABulous" was used to design eFPGAs using 130 nm and 28 nm CMOS technology nodes, which were subsequently fabricated and verified through testing. The capability of an eFPGA to act as a front-end readout chip was assessed using simulation of high energy particles passing through a silicon pixel sensor. A machine learning-based classifier, designed for reduction of sensor data at the source, was synthesized and configured onto the eFPGA. A successful proof-of-concept was demonstrated through reproduction of the expected algorithm result on the eFPGA with perfect accuracy. Finally, further development of the eFPGA technology and its application to collider detector readout is discussed.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

ETROC1: the first full chain precision timing prototype ASIC for CMS MTD endcap timing layer upgrade

We present the design and characterization of the first fullchain precision timing prototype ASIC, named ETL Readout Chipversion 1 (ETROC1) for the CMS MTD endcap timing layer (ETL)upgrade. The ETL utilizes Low Gain Avalanche Diode (LGAD) sensors todetect charged particles, with the goal to achieve a time resolutionof 40–50 ps per hit, and 30–40 ps per track with hits from twodetector layers. The ETROC1 is composed of a 5 × 5 pixelarray and peripheral circuits. The pixel array includes a4 × 4 active pixel array with an H-tree shaped networkdelivering clock and charge injection signals. Each active pixel iscomposed of various components, including a bump pad, a chargeinjection circuit, a pre-amplifier, a discriminator, adigital-to-analog converter, and a time-to-digital converter. Thesecomponents play essential roles as the front-end link in processingLGAD signals and measuring timing-related information. Theperipheral circuits provide clock signals and readoutfunctionalities. The size of the ETROC1 chip is7 mm× 9 mm. ETROC1 has been fabricated in a 65 nmCMOS process, and extensively tested under stimuli of chargeinjection, infrared laser, and proton beam. The time resolution ofbump-bonded ETROC1 + LGAD chipsets reaches 42–46 ps per hit in thebeam test.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Beam test performance studies of CMS Phase-2 Outer Tracker module prototypes

A new tracking detector will be installed as part of thePhase-2 upgrade of the CMS detector for the high-luminosity LHC era.This tracking detector includes the Inner Tracker, equipped withsilicon pixel sensor modules, and the Outer Tracker, consisting ofmodules with two parallel stacked silicon sensors. The Outer Trackerfront-end ASICs will be able to correlate hits from chargedparticles in these two sensors to perform on-module discriminationof transverse momenta (p$_{T}$). The p$_{T}$information is generated at a frequency of 40 MHz and will be usedin the Level-1 trigger decision of CMS. Prototypes of theso-called 2S modules were tested at the Test Beam Facility at DESYHamburg between 2019 and 2020. These modules use the finalfront-end ASIC, the CMS Binary Chip (CBC), and for the firsttime the Concentrator Integrated Circuit (CIC), optical readoutand on-module power conversion. In total, seven modules were tested,one of which was assembled with sensors irradiated with protons. Animportant aspect was to show that it is possible to read out modulessynchronously. A cluster hit efficiency of about 99.75 % wasachieved for all modules. The CBC p$_{T}$ discriminationmechanism has been verified to work together with the CIC andoptical readout. The measured module performance meets therequirements for operation in the upgraded CMS tracking detector.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Performance evaluation of an RFSoC operating in a 1.25 Tesla magnetic field

Here, the Belle II experiment at the SuperKEKB collider is preparing for an upgrade after 2027–2028 to handle higher luminosity and increased background rates. A Radio Frequency System-on-Chip (RFSoC) has been identified as a potential candidate for a common front-end upgrade for subsystems requiring high-speed waveform digitization. The RFSoC's ADC and DAC channels were tested across various magnetic field strengths and a few different field orientations. Power consumption and boot memory functionality were also assessed. Results indicate stable operation with negligible performance degradation, suggesting the RFSoC's viability for high-speed digitization tasks in high magnetic field environments.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

The AMACStar ASIC for the HL-LHC ATLAS ITk Strip detector: design, verification, testing, and quality assurance

For the high-luminosity upgrade to the LHC (HL-LHC), the ATLAS detector at CERN requires an all-new inner detector, the Inner Tracker (ITk). The ITk Strip subdetector is made up of silicon modules, which include three types of radiation-hard ASICs. One of these is the Autonomous Monitor and Control (AMAC). The AMAC is manufactured by Global Foundries using 130 nm CMOS8RF DM technology and is approximately 3 by 5 mm in size. This ASIC autonomously monitors the temperatures, voltages, and currents in the module components while controlling critical values in order to prevent these quantities from reaching dangerous levels. The final design, AMACStar, was verified, tested, and ensured to perform all necessary functions. A quality control procedure using an in-house probe station set-up was developed in order to ensure that every individual chip on each wafer of AMACStars required by the ITk Strip project met performance requirements. The average per wafer yield of usable AMACStars is 92.33%, exceeding the design-specific 90% yield estimated for project costing. This estimate was based on actual yields for similar designs in this process.

Analogue electronic circuits↗
DOE OSTI2025

Operation and performance of the CMS silicon strip tracker with proton-proton collisions at the CERN LHC

Salient aspects of the commissioning, calibration, and performance of the CMS silicon strip tracker are discussed, drawing on experience during operation with proton-proton collisions delivered by the CERN LHC. The data were obtained with a variety of luminosities. The operating temperature of the strip tracker was changed several times during this period and results are shown as a function of temperature in several cases. Details of the system performance are presented, including occupancy, signal-to-noise ratio, Lorentz angle, and single-hit spatial resolution. Saturation effects in the APV25 readout chip preamplifier observed during early Run 2 are presented, showing the effect on various observables and the subsequent remedy. Studies of radiation effects on the strip tracker are presented both for the optical readout links and the silicon sensors. The observed effects are compared to simulation, where available, and they generally agree well with expectations.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Droplet bioprinting of acellular and cell-laden structures at high-resolutions

Advances in digital light projection(DLP) based (bio) printers have made printing of intricate structures at high resolution possible using a wide range of photosensitive bioinks. A typical setup of a DLP bioprinter includes a vat or reservoir filled with liquid bioink, which presents challenges in terms of cost associated with bioink synthesis, high waste, and gravity-induced cell settling, contaminations, or variation in bioink viscosity during the printing process. Here, we report a vat-free, low-volume, waste-free droplet bioprinting method capable of rapidly printing 3D soft structures at high resolution using model bioinks and model cells. A multiphase many-body dissipative particle dynamics model was developed to simulate the dynamic process of droplet-based DLP printing and elucidate the roles of surface wettability and bioink viscosity. Process variables such as light intensity, photo-initiator concentration, and bioink formulations were optimized to print 3D soft structures (∼0.4–3 kPa) with a typical layer thickness of 50 µm, an XY resolution of 38 ± 1.5 μm and Z resolution of 237 ± 5.4 µm. To demonstrate its versatility, droplet bioprinting was used to print a range of acellular 3D structures such as a lattice cube, a Mayan pyramid, a heart-shaped structure, and a microfluidic chip with endothelialized channels. Droplet bioprinting, performed using model C3H/10T1/2 cells, exhibited high viability (90%) and cell spreading. Additionally, microfluidic devices with internal channel networks lined with endothelial cells showed robust monolayer formation while osteoblast-laden constructs showed mineral deposition upon osteogenic induction. Overall, droplet bioprinting could be a low-cost, no-waste, easy-to-use, method to make customized bioprinted constructs for a range of biomedical applications.

DLP↗