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At least 235 records · Page 13

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NASA NTRS1973

On particle track detectors

Aqueous sodium hydroxide is widely used to develop charged particle tracks in polycarbonate film, particularly Lexan. The chemical nature of the etching process for this system has been determined. A method employing ultra-violet absorbance was developed for monitoring the concentration of the etch products in solution. Using this method it was possible to study the formation of the etching solution saturated in etch products. It was found that the system super-saturates to a significant extent before precipitation occurs. It was also learned that the system approaches its equilibrium state rather slowly. It is felt that both these phenomena may be due to the presence of surfactant in the solution. In light of these findings, suggestions are given regarding the preparation and maintenance of the saturated etch solution. Two additional research projects, involving automated techniques for particle track analysis and particle identification using AgCl crystals, are briefly summarized.

Benton, E. V.↗

NASA NTRS1978

Studies and testing of antireflective (AR) coatings for soda-lime glass

Processes for producing antireflection films on glass are concentrated in three areas: acid etching of glass, plasma etching of glass, and acid development of sodium silicate films on glass. The best transmission was achieved through the acid etching technique, while the most durable films were produced from development of sodium silicate films. Control of the acid etching technique is presently inadequate for production implementation. While films having excellent antireflective properties were fabricated by plasma etching techniques, all were water soluble.

Pastirik, E. M.↗

NASA NTRS1978

Ion beam sputtering of fluoropolymers

Ion beam sputter processing rates as well as pertinent characteristics of etched targets and films are described. An argon ion beam source was used to sputter etch and deposit the fluoropolymers PTFE, FEP, and CTFE. Ion beam energy, current density, and target temperature were varied to examine effects on etch and deposition rates. The ion etched fluoropolymers yield cone or spire-like surface structures which vary depending upon the type of polymer, ion beam power density, etch time, and target temperature. Sputter target and film characteristics documented by spectral transmittance measurements, X-ray diffraction, ESCA, and SEM photomicrographs are included.

Sovey, J. S.↗

NASA NTRS1979

Process Development for Automated Solar Cell and Module Production. Task 4: Automated Array Assembly

A baseline sequence for the manufacture of solar cell modules was specified. Starting with silicon wafers, the process goes through damage etching, texture etching, junction formation, plasma edge etch, aluminum back surface field formation, and screen printed metallization to produce finished solar cells. The cells were then series connected on a ribbon and bonded into a finished glass tedlar module. A number of steps required additional developmental effort to verify technical and economic feasibility. These steps include texture etching, plasma edge etch, aluminum back surface field formation, array layup and interconnect, and module edge sealing and framing.

Source record↗

NASA NTRS1980

Tissue response to peritoneal implants

Peritoneal implants were fabricated from poly 2-OH, ethyl methacrylate (HEMA), polyetherurethane (polytetramethylene glycol 1000 MW, 1,4 methylene disocynate, and ethyl diamine), and untreated and sputter treated polytetrafluoroethylene (PTFE). The sputter treated PTFE implants were produced by an 8 cm diameter argon ion source. The treated samples consisted of ion beam sputter polished samples, sputter etched samples (to produce a microscopic surface cone texture) and surface pitted samples (produced by ion beam sputtering to result in 50 microns wide by 100 microns deep square pits). These materials were implanted in rats for periods ranging from 30 minutes to 14 days. The results were evaluated with regard to cell type and attachment kinetics onto the different materials. Scanning electron microscopy and histological sections were also evaluated. In general the smooth hydrophobic surfaces attracted less cells than the ion etched PTFE or the HEMA samples. The ion etching was observed to enhance cell attachment, multinucleated giant cell (MNGC) formation, cell to cell contact, and fibrous capsule formation. The cell responsed in the case of ion etched PTFE to an altered surface morphology. However, equally interesting was the similar attachment kinetics of HEMA verses the ion etched PTFE. However, HEMA resulted in a markedly different response with no MNGC's formation, minimal to no capsule formation, and sample coverage by a uniform cell layer.

Picha, G. J.↗

NASA NTRS1987

Reactions of Atomic Oxygen (O(3P)) with Polybutadienes and Related Polymers

Thin films of the following polymers were exposed at ambient temperature to ground-state oxygen atoms (O(3P)), generated by a radio-frequency glow discharge in O2: cis- and trans-1,4-polybutadienes (CB and TB), amorphous 1,2-polybutadiene (VB), polybutadienes with different 1,4/1,2 contents, trans polypentenamer (TP), cis and trans polyoctenamers (CO and TO), and ethylene-propylene rubber (EPM). Transmission infrared spectra of CB and TB films revealed extensive surface recession, or etching, unaccompanied by any microstructural changes within the films, demonstrating that the reactions were confined to the surface layers. Contrary to the report by Rabek, Lucki, and Ranby (1979), there was no O(3P)-induced cis-trans isomerization in CB or TB. From weight-loss measurements, etch rates for polybutadienes were found to be markedly dependent on vinyl content, decreasing by two orders of magnitude from CB (2% 1,2) to structures with 30 to 40% 1,2 double bonds, thereafter increasing by half an order of magnitude to VB (97% 1,2). Relative etch rates for EMP and the polyalkenamers were in the order: EMP is greater than CO (or TO) is greater than TP is greater than CB. The sole non-elastomer examined, TB, had an etch rate about six times that of CB, ascribable to a morphology difference. Cis/trans content had a negligible effect on the etch rate of the polyalkenamers. Mechanisms involving crosslinking through units are proposed for the unexpected protection imparted to polybutadienes by the 1,2 double bonds.

Golub, Morton A.↗

NASA NTRS1988

Micromachining Of Silicon

Etching rates of alloys and heavily-doped semiconductor materials significantly higher than lightly doped semiconductor if proper etching system used. Selectivity used to etch regions of semiconductor preferentially while not etching other unmasked regions. When selective etching used with laser-induced-diffusion techniques, possible to make structures that cannot be made at present. Possible to produce well-defined structures in and through wafer while not damaging existing structures on wafer.

Dickman, John E.↗

NASA NTRS1991

A conformal oxidation-resistant, plasma-polymerized coating

A comparative study was made of the surface recession (etching) of thin films of plasma polymerized tetrafluoro ethylene (PPTFE), polytetrafluoro ethylene (PTFE), and ion-beam sputter deposited polytetrafluoro ethylene (SPTFE) exposed to ground-state atomic oxygen downstream from a nonequilibrium radio-frequency O2 plasma. At 22 C, the etch rates for PTFE, SPTFE, and PPTFE were in the ratio of 8.7:1.8:1.0. A thin, conformal coating of PPTFE (etch rate of 0.3 nm/h at 22 C) was found to protect an underlying cast film of a reactive polymer, cis-1,4 polybutadiene, against ground-state atomic oxygen attack for the time required to fully etch away the PPTFE coating. From ESCA analysis, PTFE exhibited only minor surface oxidation (uptake of 0.5 atom percent O) upon etching, its F/C ratio decreasing slightly from 2.00 to 1.97; PPTFE exhibited considerable surface oxidation (uptake of 5.9 atom percent O) intermediate between those of PTFE and PPTFE, with a decrease in F/C ratio from 1.73 to 1.67. A plasma-polymerized fluorocarbon coating such as PPTFE might be useful for space applications to protect polymers that are vulnerable to oxidation or degradation by oxygen atoms.

Golub, Morton A.↗

NASA NTRS1989

Effect of reactor loading on atomic oxygen concentration as measured by NO chemiluminescence

It has previously been observed that the etch rate of polyethylene samples in the afterglow of an RF discharge in oxygen increases with reactor loading. This enhancement of the etch rate is attributed to reactive gas phase products of the polymer etching. In the present work, emission spectroscopy is employed to examine the species present in the gas phase during etching of polyethylene. In particular, the concentration of atomic oxygen downstream from the polyethylene samples is studied as a function of the reactor loading. It is found that the concentration of atomic oxygen increases as the reactor loading is increased. The increase of etch rate with increased reactor loading is attributed to the increase of atomic oxygen concentration in the vicinity of the sample.

Lerner, N. R.↗

NASA NTRS1992

Fatigue damage study in aluminum-2024 T3 alloys

The grain structure of aluminum 2024, a commonly used commercial alloy is investigated, and these findings are correlated with the fatigue property of the material. Samples of aluminum 2024 were polished and etched in different reagents. Optical micrographs (at 500X) of samples etched in Keller's reagent revealed grain boundaries as well as some particles present in the microstructure. Normal x-ray scans of samples etched for different intervals of time in Keller's reagent indicate no significant variations in diffraction peak positions; however, the width of the rocking curve increased with the time of etching. These results are consistent with the direct dependence of the width of the rocking curve on the range of grain orientation. Etching removes the preferred orientation layer of the sample produced by polishing; thereby, causing the width to increase.

Ferguson, Milton W.↗

NASA NTRS1993

Incident angle dependence of proton response of CR-39 (TS-16) track detector

The proton response of the TS-16 type of CR-39 plastic nuclear track detector has been studied with accelerated and fast neutron induced protons in vacuum and in air. The diameters of etched tracks were measured as a function of etching time and the etch rate ratio and the etch induction layer were determined from the growth curve of the diameter using a variable etch rate ratio model. In the case of the accelerated protons in vacuum an anomalous incident angle dependence of the response is observed.

Radiation Monitoring/instrumentation↗

NASA NTRS2004

Multi-Functional, Micro Electromechanical Silicon Carbide Accelerometer

A method of bulk manufacturing SiC sensors is disclosed and claimed. Materials other than SiC may be used as the substrate material. Sensors requiring that the SiC substrate be pierced are also disclosed and claimed. A process flow reversal is employed whereby the metallization is applied first before the recesses are etched into or through the wafer. Aluminum is deposited on the entire planar surface of the metallization. Photoresist is spun onto the substantially planar surface of the Aluminum which is subsequently masked (and developed and removed). Unwanted Aluminum is etched with aqueous TMAH and subsequently the metallization is dry etched. Photoresist is spun onto the still substantially planar surface of Aluminum and oxide and then masked (and developed and removed) leaving the unimidized photoresist behind. Next, ITO is applied over the still substantially planar surface of Aluminum, oxide and unimidized photoresist. Unimidized and exposed photoresist and ITO directly above it are removed with Acetone. Next, deep reactive ion etching attacks exposed oxide not protected by ITO. Finally, hot phosphoric acid removes the Al and ITO enabling wires to connect with the metallization. The back side of the SiS wafer may be also etched.

Robert S Okojie↗

NASA NTRS2004

Multi-functional micro electromechanical devices and method of bulk manufacturing same

Okojie, Robert S.↗

NASA NTRS2008

Nanotip Carpets as Antireflection Surfaces

Carpet-like random arrays of metal-coated silicon nanotips have been shown to be effective as antireflection surfaces. Now undergoing development for incorporation into Sun sensors that would provide guidance for robotic exploratory vehicles on Mars, nanotip carpets of this type could also have many uses on Earth as antireflection surfaces in instruments that handle or detect ultraviolet, visible, or infrared light. In the original Sun-sensor application, what is required is an array of 50-micron-diameter apertures on what is otherwise an opaque, minimally reflective surface, as needed to implement a miniature multiple-pinhole camera. The process for fabrication of an antireflection nanotip carpet for this application (see Figure 1) includes, and goes somewhat beyond, the process described in A New Process for Fabricating Random Silicon Nanotips (NPO-40123), NASA Tech Briefs, Vol. 28, No. 1 (November 2004), page 62. In the first step, which is not part of the previously reported process, photolithography is performed to deposit etch masks to define the 50-micron apertures on a silicon substrate. In the second step, which is part of the previously reported process, the non-masked silicon area between the apertures is subjected to reactive ion etching (RIE) under a special combination of conditions that results in the growth of fluorine-based compounds in randomly distributed formations, known in the art as "polymer RIE grass," that have dimensions of the order of microns. The polymer RIE grass formations serve as microscopic etch masks during the next step, in which deep reactive ion etching (DRIE) is performed. What remains after DRIE is the carpet of nano - tips, which are high-aspect-ratio peaks, the tips of which have radii of the order of nanometers. Next, the nanotip array is evaporatively coated with Cr/Au to enhance the absorption of light (more specifically, infrared light in the Sun-sensor application). The photoresist etch masks protecting the apertures are then removed by dipping the substrate into acetone. Finally, for the Sun-sensor application, the back surface of the substrate is coated with a 57-nm-thick layer of Cr for attenuation of sunlight.

Bae, Youngsam↗

NASA NTRS2007

Fabrication of Buried Nanochannels From Nanowire Patterns

A method of fabricating channels having widths of tens of nanometers in silicon substrates and burying the channels under overlying layers of dielectric materials has been demonstrated. With further refinement, the method might be useful for fabricating nanochannels for manipulation and analysis of large biomolecules at single-molecule resolution. Unlike in prior methods, burying the channels does not involve bonding of flat wafers to the silicon substrates to cover exposed channels in the substrates. Instead, the formation and burying of the channels are accomplished in a more sophisticated process that is less vulnerable to defects in the substrates and less likely to result in clogging of, or leakage from, the channels. In this method, the first step is to establish the channel pattern by forming an array of sacrificial metal nanowires on an SiO2-on-Si substrate. In particular, the wire pattern is made by use of focused-ion-beam (FIB) lithography and a subsequent metallization/lift-off process. The pattern of metal nanowires is then transferred onto the SiO2 layer by reactive-ion etching, which yields sacrificial SiO2 nanowires covered by metal. After removal of the metal covering the SiO2 nanowires, what remains are SiO2 nanowires on an Si substrate. Plasma-enhanced chemical vapor deposition (PECVD) is used to form a layer of a dielectric material over the Si substrate and over the SiO2 wires on the surface of the substrate. FIB milling is then performed to form trenches at both ends of each SiO2 wire. The trenches serve as openings for the entry of chemicals that etch SiO2 much faster than they etch Si. Provided that the nanowires are not so long that the diffusion of the etching chemicals is blocked, the sacrificial SiO2 nanowires become etched out from between the dielectric material and the Si substrate, leaving buried channels. At the time of reporting the information for this article, channels 3 m long, 20 nm deep, and 80 nm wide (see figure) had been fabricated by this method.

Choi, Daniel↗

NASA NTRS2007

Focal-Plane Arrays of Quantum-Dot Infrared Photodetectors

Focal-plane arrays of semiconductor quantum-dot infrared photodetectors (QDIPs) are being developed as superior alternatives to prior infrared imagers, including imagers based on HgCdTe devices and, especially, those based on quantum-well infrared photodetectors (QWIPs). HgCdTe devices and arrays thereof are difficult to fabricate and operate, and they exhibit large nonunformities and high 1/f (where f signifies frequency) noise. QWIPs are easier to fabricate and operate, can be made nearly uniform, and exhibit lower 1/f noise, but they exhibit larger dark currents, and their quantization only along the growth direction prevents them from absorbing photons at normal incidence, thereby limiting their quantum efficiencies. Like QWIPs, QDIPs offer the advantages of greater ease of operation, greater uniformity, and lower 1/f noise, but without the disadvantages: QDIPs exhibit lower dark currents, and quantum efficiencies of QDIPs are greater because the three-dimensional quantization of QDIPs is favorable to the absorption of photons at normal or oblique incidence. Moreover, QDIPs can be operated at higher temperatures (around 200 K) than are required for operation of QWIPs. The main problem in the development of QDIP imagers is to fabricate quantum dots with the requisite uniformity of size and spacing. A promising approach to be tested soon involves the use of electron-beam lithography to define the locations and sizes of quantum dots. A photoresist-covered GaAs substrate would be exposed to the beam generated by an advanced, high-precision electron beam apparatus. The exposure pattern would consist of spots typically having a diameter of 4 nm and typically spaced 20 nm apart. The exposed photoresist would be developed by either a high-contrast or a low-contrast method. In the high-contrast method, the spots would be etched in such a way as to form steep-wall holes all the way down to the substrate. The holes would be wider than the electron beam spots perhaps as wide as 15 to 20 nm, but may be sufficient to control the growth of the quantum dots. In the low-contrast method, the resist would be etched in such a way as to form dimples, the shapes of which would mimic the electron-beam density profile. Then by use of a transfer etching process that etches the substrate faster than it etches the resist, either the pattern of holes or a pattern comprising the narrow, lowest portions of the dimples would be imparted to the substrate. Having been thus patterned, the substrate would be cleaned. The resulting holes or dimples in the substrate would serve as nucleation sites for the growth of quantum dots of controlled size in the following steps. The substrate would be cleaned, then placed in a molecular-beam-epitaxy (MBE) chamber, where native oxide would be thermally desorbed and the quantum dots would be grown.

Gunapala, Sarath↗

NASA NTRS2005

Modifications of Fabrication of Vibratory Microgyroscopes

A micromachining process for the fabrication of vibratory microgyroscopes from silicon wafers, and aspects of the microgyroscope design that are inextricably linked with the fabrication process, have been modified in an effort to increase production yields from perspectives of both quantity and quality. Prior to the modifications, the effective production yield of working microgyroscopes was limited to one or less per wafer. The modifications are part of a continuing effort to improve the design and increase production yields to more than 30 working microgyroscopes per wafer. A discussion of pertinent aspects of the unmodified design and the unmodified fabrication process is prerequisite to a meaningful description of the modifications. The design of the microgyroscope package was not conducive to high yield and rapid testing of many microgyroscopes. One of the major impediments to high yield and testing was found to lie in vibration- isolation beams around the four edges of each microgyroscope, which beams were found to be unnecessary for achieving high resonance quality factors (Q values) characterizing the vibrations of petallike cantilevers. The fabrication process included an 8- m-deep plasma etch. The purpose of the etch was to create 8- m vertical gaps, below which were to be placed large gold evaporated electrodes and sensing pads to drive and sense resonant vibrations of the "petals." The process also included a step in which bridges between dies were cut to separate the dies. The etched areas must be kept clean and smooth (free of debris and spikes), because any object close to 8 m high in those areas would stop the vibrations. However, it was found that after the etch, there remained some spikes with heights that were, variously, almost as high or as high as the etch depth. It also was found that the cutting of bridges created silicon debris, some of which lodged in the 8- m gaps and some of which landed on top of the petals. The masses added to the petals by the debris altered resonance frequencies and/or Q values to unacceptable degrees. Hence, the spikes and the debris have been conjectured to cause most of the observed malfunctions of newly fabricated microgyroscopes. Another pertinent aspect of the unmodified design and process was the fabrication of electrodes and the 8- m capacitance gap on a 500- m-thick wafer, and the fabrication of a 3-mm-thick baseplate from another wafer. It was necessary to bond these wafers to each other in an assembly step that was later found to be superfluous in that it could be eliminated by a suitable modification of the design.

Bae, Sam Y.↗

NASA NTRS2012

Design and Characterization of Thin Stainless Steel Burst Disks for Increasing Two-Stage Light Gas Launcher Efficiency

Laser etched 300 series Stainless Steel Burst Disks (SSBD) ranging between 0.178 mm (0.007-in.) and 0.508mm (0.020-in.) thick were designed for use in a 17-caliber two-stage light gas launcher. First, a disk manufacturing method was selected using a combination of wire electrical discharge machining (EDM) to form the blank disks and laser etching to define the pedaling fracture pattern. Second, a replaceable insert was designed to go between the SSDB and the barrel. This insert reduced the stress concentration between the SSBD and the barrel, providing a place for the petals of the SSDB to open, and protecting the rifling on the inside of the barrel. Thereafter, a design of experiments was implemented to test and characterize the burst characteristics of SSBDs. Extensive hydrostatic burst testing of the SSBDs was performed to complete the design of experiments study with one-hundred and seven burst tests. The experiment simultaneously tested the effects of the following: two SSBD material states (full hard, annealed); five SSBD thicknesses 0.178, 0.254, 0.305, 0.381 mm (0.007, 0.010, 0.012, 0.015, 0.020-in.); two grain directions relative); number of times the laser etch pattern was repeated (varies between 5-200 times); two heat sink configurations (with and without heat sink); and, two barrel configurations (with and without insert). These tests resulted in the quantification of the relationship between SSBD thickness, laser etch parameters, and desired burst pressure. Of the factors investigated only thickness and number of laser etches were needed to develop a mathematical relationship predicting hydrostatic burst pressure of disks using the same barrel configuration. The fracture surfaces of two representative SSBD bursts were then investigated with a scanning electron microscope, one burst hydrostatically in a fixture and another dynamically in the launcher. The fracture analysis verified that both burst conditions resulted in a ductile overload failure indicated by transgranular microvoid coalescence, non-fragmenting rupture and mixed tensile and shear failure modes, regardless of the material states tested. More testing is underway to determine the relationship between SSBD burst pressure and projectile velocity.

Tylka, Jonathan M.↗