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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13

High-Level Model Articulation with BuildingSync and OpenStudio

The use of the BuildingSync schema for describing the contents of buildings is becoming more common with its recent integration into the Audit Template tool as well as ASHRAE’s Building Energy Quotient (bEQ) web portal. Although BuildingSync was initially created to store and transfer data related to building energy audits (as defined by ASHRAE Standard 211), it has since been expanded to store the data needed to articulate fully defined physics-based building energy models. BuildingSync combined with abstracted high-level input methods defined in OpenStudio’s Standards project and the newly developed BuildingSync gem allows BuildingSync eXtensible Markup Language (XML) (Bray, Paoli, Sperberg-McQueen, Maler, Eve (Sun Microsystems, & Francois, 2008) document to be converted into OpenStudio models. Automatic generation of a building energy model from data collected during an audit 1) eliminates the need to separately generate an energy model, 2) improves consistency between model generation, and 3) simplifies evaluation of various energy efficiency measures. This manuscript will discuss this open-source project, including: development of the validation infrastructure necessary to provide formalized expectations of informational requirements for BuildingSync documents; development of the BuildingSync gem for translation of BuildingSync documents to OpenStudio models as well as example implementations; and finally, the manuscript will elaborate on the advantages and disadvantages of using high-level models generated from BuildingSync as surrogates to detailed models.

30 DIRECT ENERGY CONVERSION↗

Solid-state information pattern discriminating switch

A maze-based switch generally having three functional blocks is disclosed. The first functional block handles communications by accepting an entered maze pattern from an external system controller and outputting the entered maze pattern (and optionally its directional complement) to the second functional block. The second functional block stores the maze pattern (and optionally its directional complement) to a permanent storage element and outputs the stored, entered maze pattern and its directional complement to a series of transistors in the third functional block. The third functional block is an electronic maze in which a correct maze pattern and its directional complement must be received by the transistors for the transistors to pass electrical power through the electronic maze to a connected element. The third functional block may alternatively be implemented with optical elements, optoelectronic elements, microelectromechanical elements, or elements formed by other microsystem technologies.

Galambos, Paul C.↗

Dover CoreGuard Ⓡ Cybersecurity Protections for Critical Energy Infrastructure Final Report

This report documents the status of technical objectives and activities for the Department of Energy (DOE) Small Business Innovation Research (SBIR) Phase I project, titled “Dover CoreGuard Ⓡ Cybersecurity Protections for Critical Energy Infrastructure” (Award No. DE-SC0023743), undertaken by Dover Microsystems, Inc., Wayland, MA. The Principal Investigator for this project was Dr. Stephen Papa, Dover’s Chief Technology Officer (CTO). The contract PoP (Period of Performance) is scheduled for completion by February 9, 2024.

99 GENERAL AND MISCELLANEOUS↗

CUPID, the Cuore upgrade with particle identification

CUPID, the CUORE Upgrade with Particle Identification, is a next-generation experiment to search for neutrinoless double beta decay (0 νββ ) and other rare events using enriched Li 2 100 MoO 4 scintillating bolometers. It will be hosted by the CUORE cryostat located at the Laboratori Nazionali del Gran Sasso in Italy. The main physics goal of CUPID is to search for 0 νββ of 100 Mo with a discovery sensitivity covering the full neutrino mass regime in the inverted ordering scenario, as well as the portion of the normal ordering regime with lightest neutrino mass larger than 10 meV. With a conservative background index of 10 −4 cts/(keV·kg·yr), 240 kg isotope mass, 5 keV FWHM energy resolution at 3 MeV and 10 live-years of data taking, CUPID will have a 90% C.L. half-life exclusion sensitivity of 1.8 · 10 27 yr, corresponding to an effective Majorana neutrino mass ( m ββ ) sensitivity of 9–15 meV, and a 3σ discovery sensitivity of 1 · 10 27 yr, corresponding to an m ββ range of 12–21 meV.

Alfonso, K. [Virginia Polytechnic Institute and St↗

Publisher Erratum: CUPID, the Cuore upgrade with particle identification

Publisher Erratum: Eur. Phys. J. C (2025) 85:737 https://doi.org/10.1140/epjc/s10052-025-14352-1 The author M. Pavan (affiliations 9 and 10) was missing from the published author list. The online version of the article has been updated to include the author. Additionally, affiliations 4 and 17 have been corrected to reflect the proper institutional order. The publisher apologizes for the inconvenience caused.

Alfonso, K. [Virginia Polytechnic Institute and St↗

Impact of 12-nm FinFET Technology Variations on TID Effects: A Comparative Study of GF 12LP and 12LP+ at the Transistor Level

Here, this article presents a comparative analysis of total ionizing dose (TID) response in GlobalFoundries’ (GF) 12 low-power (LP) and 12LP+12-nm bulk fin field effect transistor (FinFET) technologies using 10-keV X-rays. Our findings show that 12LP+ n-type transistors demonstrate higher sensitivity to TID degradation of the off-state leakage drain current compared to 12LP. Data indicate that for both 12LP and 12LP+, transistors with higher threshold voltages (VTs) exhibit lower off-state drain-source leakage postirradiation compared to transistors with lower VTs. Data consistently show that transistors with fewer fins per transistor show superior TID tolerance, in both 12LP and 12LP+ technologies. Lower VT transistors in both technologies display similar preirradiation leakage currents. On the other hand, higher VT transistors in 12LP+ show lower preirradiation leakage currents than those in 12LP, highlighting that the front-end-of-line of 12LP+ technology has been modified compared to 12LP. p-type devices in 12LP+ presented negligible degradation. Larger TID sensitivity in 12LP+ might be attributed to the implementation of dual-metal gate work functions, reduced halo doping, deeper source/drain (S/D) doping profiles, and/or 12LP+ having narrower fins compared to 12LP.

Dual-metal gate work functions↗

A gravity-based mounting approach for large-scale cryogenic calorimeter arrays

Cryogenic calorimeters are among the leading technologies for searching for rare events. The CUPID experiment is exploiting this technology to deploy a tonne-scale detector to search for neutrinoless double-beta decay of 100 Mo. The CUPID collaboration proposed an innovative approach to assembling cryogenic calorimeters in a stacked configuration, held in position solely by gravity. This gravity-based assembly method is unprecedented in the field of cryogenic calorimeters and offers several advantages, including relaxed mechanical tolerances and simplified construction. To assess and optimize its performance, we constructed a medium-scale prototype hosting 28 Li 2 MoO 4 crystals and 30 Ge light detectors, both operated as cryogenic calorimeters at the Laboratori Nazionali del Gran Sasso (Italy). Despite an unexpected excess of noise in the light detectors, the results of this test proved (i) a thermal stability better than ±0.5 mK at 10 mK, (ii) a good energy resolution of Li 2 MoO 4 cryogenic calorimeters, (6.6 ± 2.2) keV FWHM at 2615 keV, and (iii) a Li 2 MoO 4 light yield measured by the closest light detector of 0.36 keV/MeV, sufficient to guarantee the particle identification requested by CUPID.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Publisher Erratum: A gravity-based mounting approach for large-scale cryogenic calorimeter arrays

In the originally published version of this article, several errors were identified in the author list and acknowledgements section. These have now been corrected as follows: Corrections to the Author List: Barrera has been corrected to Barresi. Copello (affiliation 18) has been corrected to Copello (affiliation 19). F. De Domizio has been corrected to S. Di Domizio. Figueros-Feliciamo has been corrected to Figueroa-Feliciano. Mancarella (affiliations 8, 17) has been corrected to Mancarella (affiliations 8, 18). Manenti (affiliations 18, 19) has been corrected to Manenti (affiliations 19, 20). Mayer (affiliations 3, 20, 31) has been corrected to Mayer (affiliations 3, 21, 31). Pagot has been corrected to Pageot. Puranam (affiliation 20) has been corrected to Puranam (affiliation 21). O. Penek has been corrected to Ö. Penek. L. Pettinacci has been corrected to V. Pettinacci. P. Pirro has been corrected to S. Pirro. Previtale has been corrected to Previtali. Rappoldi (affiliation 18) has been corrected to Rappoldi (affiliation 19). Raselli (affiliation 18) has been corrected to Raselli (affiliation 19). Rizzoli (affiliations 8, 17) has been corrected to Rizzoli (affiliations 8, 18). Rossella (affiliation 18) has been corrected to Rossella (affiliation 19). Correction to the Acknowledgements Section: The following grant numbers were missing and have now been added: This work was supported by NSF-PHY-2412377 and NSF-PHY-1913374. Additionally, on page 11, Section 5, second line, the chemical formula was incorrectly given as Li 2 MO 4 . The correct formula is Li 2 MoO 4 . The original article has been updated to reflect these corrections. The publisher apologizes for the inconvenience.

Alfonso, K. [Virginia Polytechnic Institute and St↗

Sensitivity of the CUPID experiment to $0\nu \beta \beta$ decay of 100 Mo

CUPID is a next-generation bolometric experiment to search for neutrinoless double-beta decay ($0\nu \beta \beta$ ) of 100 Mo using Li 2 MoO 4 scintillating crystals. It will operate 1596 crystals at ~10 mK in the CUORE cryostat at the Laboratori Nazionali del Gran Sasso in Italy. Each crystal will be facing two Ge-based bolometric light detectors for α rejection. We compute the discovery and the exclusion sensitivity of CUPID to $0\nu \beta \beta$ in a Frequentist and a Bayesian framework. This computation is done numerically based on pseudo-experiments. For the CUPID baseline scenario, with a background and an energy resolution of 1.0 x 10 –4 counts/keV/kg/yr and 5 keV FWHM at the Q-value, respectively, this results in a Bayesian exclusion sensitivity (90% c.i.) of $\hat{T}_{1/2} > 1.6 \times 10^{27} \ \textrm{yr}$, corresponding to the effective Majorana neutrino mass of $\hat{m}_{\beta \beta } < \ 9.6$ – 28 meV. The Frequentist discovery sensitivity (3σ ) is $\hat{T}_{1/2}= 1.0 \times 10^{27} \ \textrm{yr}$, corresponding to $\hat{m}_{\beta \beta }= \ 12$ – 36 meV.

Alfonso, K. [Virginia Polytechnic Institute and St↗

Cobalt–Nickel Exchange in Exfoliated Battery Layered Cathode Sheets with Application to Recycling

With the emerging dominance of electric vehicles (EV) in the transportation sector, recycling or upcycling spent battery materials will be required to reduce EV costs, lessen waste, and ease critical material supply chain issues for EV batteries. Here, motivated by work in the literature describing the exfoliation of layered oxides, first‐principles calculations are performed to show that Li x CoO 2 , if exfoliated into nanosheets, can readily undergo transition metal cation exchange in aqueous media. The substitution of Co 3+ or Co 4+ cations inside the sheet by Ni 2+ is associated with modest reaction barriers (Δ G* ≈ 0.3–0.7 eV) and is at most mildly endothermic (Δ G ≈ 0.2–0.3 eV). In contrast, previous battery degradation studies have shown that Co 3+ diffusion is strongly inhibited inside bulk layered oxides. This suggests that processing spent layered oxides as nanosheets can provide a potentially low‐energy‐cost pathway to altering the transition metal and/or dopant stoichiometry, which can be used toward developing new room‐temperature upcycling routes for cathodes from end‐of‐life batteries.

battery recycling↗

Upper critical magnetic field and multiband superconductivity in artificial high-𝑇 𝑐 superlattices of nano quantum wells

Artificial high-T c superlattices (AHTS) composed of quantum building blocks with tunable superconducting critical temperature have been synthesized by engineering their nanoscale geometry using the Bianconi-Perali Valletta (BPV) two-gap superconductivity theory. These quantum heterostructures consist of quantum wells made of superconducting, modulation-doped Mott insulators (S), confined by a metallic (N) potential barrier. The lattice geometry has been carefully engineered to induce the predicted Fano-Feshbach shape resonance between the gaps, near a topological Lifshitz transition. Here, we validate the BPV theory by providing compelling experimental evidence that AHTS samples, at the peak of the superconducting dome, exhibit resonant two-band, two-gap superconductivity. This is demonstrated by measuring the temperature dependence of the upper critical magnetic field, μ 0 H c2 , in samples with superlattice periods 3.3 < d < 5.28 nm and L/d ratios close to the magic value 2/3 (where L is the thickness of the superconducting La 2 CuO 4 layer and d is the superlattice period). Here, the data reveal the predicted upward concavity in H c2 (T) and a characteristic kink in the coherence length as a function of temperature, confirming the predicted two-band superconductivity with Fermi velocity ratio ≈ 0.25 and significant pair-exchange term among the two condensates.

Heterostructures↗

Energy Efficiency Scaling for 2 Decades (EES2) Roadmap for Computing

In response to the looming crisis in global energy consumption required for advanced computing applications, the United States Department of Energy (DOE) Advanced Materials and Manufacturing Technology Office (AMMTO) is leading a multi-organizational effort to define a roadmap for energy efficiency scaling for two decades (EES2) with the aim to reduce energy use in all aspects of computation by more than a factor of 1000 in two decades. By July of 2024, over 60 organizations representing industry, academia, and the national laboratories have pledged to work in various aspects of research and development to enable energy efficiency in computing including in the development of the EES2 roadmap, with an initial public release in 2024 as the first phase of an ongoing commitment to energy-efficient and sustainable computation.

Kaarsberg, Tina [U.S. Department of Energy (DOE)]↗

Towards Scalable 3D Integration of 2T-nC FeRAM with Hundreds of Layer Stacking

In this article, we study the limits of the number of capacitors and read history dependence in a 2T-nC ferroelectric random-access memory (FeRAM) cell, paving the way for its high-density integration toward hundreds of stacked layers. Through a comprehensive experimental and simulation study on the scaling behavior of the 2T-nC FeRAM architecture, we demonstrate: (i) successful fabrication of 2T-64C cells with robust memory operation and clearly distinguishable ‘0’ and ‘1’ states, even in 64- capacitor configurations; (ii) that the parasitic capacitance of the floating node originates predominantly from the linear component of the ferroelectric capacitor, and its impact on n-scaling—due to degraded sense margin—can be mitigated by floating unselected capacitors with enough TΩ isolation; (iii) that sharing write and read transistors among n capacitors introduces a read history dependence issue due to fluctuating floating node voltage (VFN); and (iv) that a proposed FN discharge scheme can effectively eliminate read-sequence dependence, at the cost of reduced read endurance.

36 MATERIALS SCIENCE↗

Securing 3D NAND Without Density Loss via In-Situ Encryption Using a Single Transistor XOR Cell

In this article, we push lightweight XOR-based in-situ encryption to extreme density by proposing a singletransistor XOR memory cell and applying it to 3D NAND, enabling secure data storage without density loss. Using a ferroelectric field-effect transistor (FeFET) as an example technology, we demonstrate that: i) a single-transistor memory can realize the XOR function by exploiting the ability to charge the source and drain separately and control current flow direction, eliminating the need for conventional encrypted cells that rely on complementary devices; ii) with a XOR-based cipher, encryption and decryption can be mapped to in-situ array operations, where ciphertext is stored as the threshold voltage (VTH) states of FeFETs in a NAND string, and decryption is achieved through read operations using key-dependent complementary source/drain bias; iii) the proposed technique is scalable to multi-level cell (MLC) storage by encrypting and decrypting data bit by bit; iv) using an integrated NAND FeFET array, we experimentally demonstrate encryption and decryption operations for both single-level cell (SLC) and MLC storage; v) systemlevel benchmarking shows that the proposed technique achieves 48× and 278× improvements in encryption and decryption throughput, respectively, compared to AES.

36 MATERIALS SCIENCE↗

Variation Tolerant and Energy-Efficient Charge Domain Compute-in-Memory Array with Binary and Multi-Level Cell Ferroelectric FET

Here, in this work, we present a variation-tolerant and energy-efficient charge-domain Ferroelectric FET (FeFET) based Compute-in-Memory (CiM) array design that is compatible with both binary and multi-level cell memory sensing. We demonstrate that: 1) by exploiting FeFET as a nonvolatile switch, its high ON/OFF ratio in the subthreshold region can suppress the error introduced by the inaccurate ON state conductance, thus realizing robust CiM operations, unlike the current-domain CiM design where the computation results is highly sensitive to the device conductance variation; 2) by leveraging a dense dynamic random access memory (DRAM)-like 1FeFET1C cell structure, the proposed design benefits from the existing high density DRAM establishment while also significantly relaxing the capacitor retention and transistor leakage requirement; 3) the charge-domain CiM supports both binary FeFET with minimum overhead and MLC FeFET with tolerable latency for MLC state sensing, whose efficacy is validated experimentally on both cell-level and array-level; 4) the proposed CiM shows much better device variation resilience than conventional current-domain CiM, and also improves inference accuracy. Macro-level evaluation results demonstrate significantly higher energy efficiency and area efficiency compared to prior CiM works.

Duan, Jiahui [University of Notre Dame, IN (United↗

On-chip frequency-bin quantum photonics

Abstract Frequency-bin encoding furnishes a compelling pathway for quantum information processing systems compatible with established lightwave infrastructures based on fiber-optic transmission and wavelength-division multiplexing. Yet although significant progress has been realized in proof-of-principle tabletop demonstrations, ranging from arbitrary single-qubit gates to controllable multiphoton interference, challenges in scaling frequency-bin processors to larger systems remain. In this Perspective, we highlight recent advances at the intersection of frequency-bin encoding and integrated photonics that are fundamentally transforming the outlook for scalable frequency-based quantum information. Focusing specifically on results on sources, state manipulation, and hyperentanglement, we envision a possible future in which on-chip frequency-bin circuits fulfill critical roles in quantum information processing, particularly in communications and networking.

electro-optic modulators↗

Vertical 2T-nC FeRAM Demonstration: BEOL Read Transistor for 4F 2 Memory Strings and Two-Terminal Selector Design for Polarization Disturb Mitigation

In this work, we demonstrate a vertical 2T-nC FeRAM with a back-end-of-line (BEOL) read transistor (T R ) for 4F 2 string and propose a selector design to mitigate polarization disturb in passive capacitor crossbar arrays. Key contributions include: 1) successful integration and operation composed of a Si MOSFET write transistor (T W ), 3-layer cylindrical ferroelectric capacitors, and Si-doped In 2 O 3 BEOL T R , demonstrating the feasibility of 4F 2 2T−nC string; 2) introducing nonlinearity into the capacitor stack to suppress ferroelectric voltage drop under inhibition biases while maintaining sufficient write voltage, reducing disturbance; 3)modeling and experimental validation of inserting a metalsemiconductor (a-Si)-metal (MSM) selector into the capacitor in mitigating the disturb, particularly achieving 9x reduction of disturb after 10 6 cycles in the V W /2 scheme.

42 ENGINEERING↗

Micro sun sensor for spacecraft attitude control

A micro sun sensor is being developed for use on a Mars rover for the Mars Science Laboratory Mission. The micro sun sensor, which is basically a small pinhole camera, consists of a small mask with pinholes, placed on top of an image detector.

image sensors↗