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DOE OSTI · 3029568

Vertical 2T-nC FeRAM Demonstration: BEOL Read Transistor for 4F 2 Memory Strings and Two-Terminal Selector Design for Polarization Disturb Mitigation

Deng, Shan [University of Notre Dame, IN (United States)]·Howe, John [University of Notre Dame, IN (United States)]·Ma, Sizhe [University of Notre Dame, IN (United States)]·Tauki, Sadik Yasir [Pennsylvania State Univ., University Park, PA (United States)]·Zhao, Zijian [University of Notre Dame, IN (United States)]·Duan, Jiahui [University of Notre Dame, IN (United States)]·Lee, YuShan [University of Notre Dame, IN (United States)]·Qin, Yixin [University of Notre Dame, IN (United States)]·Joshi, Rajiv [IBM, Yorktown Heights, NY (United States). Thomas J. Watson Research Center]·Kampfe, Thomas [Fraunhofer Inst. for Photonic Microsystems, Dresden (Germany)]·Gong, Xiao [National Univ. of Singapore (Singapore)]·Narayanan, Vijaykrishnan [Pennsylvania State Univ., University Park, PA (United States)]·Ni, Kai [University of Notre Dame, IN (United States)]
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Abstract

In this work, we demonstrate a vertical 2T-nC FeRAM with a back-end-of-line (BEOL) read transistor (T R ) for 4F 2 string and propose a selector design to mitigate polarization disturb in passive capacitor crossbar arrays. Key contributions include: 1) successful integration and operation composed of a Si MOSFET write transistor (T W ), 3-layer cylindrical ferroelectric capacitors, and Si-doped In 2 O 3 BEOL T R , demonstrating the feasibility of 4F 2 2T−nC string; 2) introducing nonlinearity into the capacitor stack to suppress ferroelectric voltage drop under inhibition biases while maintaining sufficient write voltage, reducing disturbance; 3)modeling and experimental validation of inserting a metalsemiconductor (a-Si)-metal (MSM) selector into the capacitor in mitigating the disturb, particularly achieving 9x reduction of disturb after 10 6 cycles in the V W /2 scheme.

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BibTeXRIS

Deng, Shan [University of Notre Dame, IN (United States)], Howe, John [University of Notre Dame, IN (United States)], Ma, Sizhe [University of Notre Dame, IN (United States)], Tauki, Sadik Yasir [Pennsylvania State Univ., University Park, PA (United States)], Zhao, Zijian [University of Notre Dame, IN (United States)], Duan, Jiahui [University of Notre Dame, IN (United States)], Lee, YuShan [University of Notre Dame, IN (United States)], Qin, Yixin [University of Notre Dame, IN (United States)], Joshi, Rajiv [IBM, Yorktown Heights, NY (United States). Thomas J. Watson Research Center], Kampfe, Thomas [Fraunhofer Inst. for Photonic Microsystems, Dresden (Germany)], Gong, Xiao [National Univ. of Singapore (Singapore)], Narayanan, Vijaykrishnan [Pennsylvania State Univ., University Park, PA (United States)], Ni, Kai [University of Notre Dame, IN (United States)]. 2025-06-08. Vertical 2T-nC FeRAM Demonstration: BEOL Read Transistor for 4F 2 Memory Strings and Two-Terminal Selector Design for Polarization Disturb Mitigation. https://doi.org/10.23919/vlsitechnologyandcir65189.2025.11074964

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