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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
NASA NTRS2003

Scalability of a Low-Cost Multi-Teraflop Linux Cluster for High-End Classical Atomistic and Quantum Mechanical Simulations

Scalability of a low-cost, Intel Xeon-based, multi-Teraflop Linux cluster is tested for two high-end scientific applications: Classical atomistic simulation based on the molecular dynamics method and quantum mechanical calculation based on the density functional theory. These scalable parallel applications use space-time multiresolution algorithms and feature computational-space decomposition, wavelet-based adaptive load balancing, and spacefilling-curve-based data compression for scalable I/O. Comparative performance tests are performed on a 1,024-processor Linux cluster and a conventional higher-end parallel supercomputer, 1,184-processor IBM SP4. The results show that the performance of the Linux cluster is comparable to that of the SP4. We also study various effects, such as the sharing of memory and L2 cache among processors, on the performance.

Kikuchi, Hideaki↗
NASA NTRS2004

A Scalable Nonuniform Pointer Analysis for Embedded Program

In this paper we present a scalable pointer analysis for embedded applications that is able to distinguish between instances of recursively defined data structures and elements of arrays. The main contribution consists of an efficient yet precise algorithm that can handle multithreaded programs. We first perform an inexpensive flow-sensitive analysis of each function in the program that generates semantic equations describing the effect of the function on the memory graph. These equations bear numerical constraints that describe nonuniform points-to relationships. We then iteratively solve these equations in order to obtain an abstract storage graph that describes the shape of data structures at every point of the program for all possible thread interleavings. We bring experimental evidence that this approach is tractable and precise for real-size embedded applications.

Venet, Arnaud↗
NASA NTRS2007

Nonvolatile Analog Memory

A nonvolatile analog memory uses pairs of ferroelectric field effect transistors (FFETs). Each pair is defined by a first FFET and a second FFET. When an analog value is to be stored in one of the pairs, the first FFET has a saturation voltage applied thereto, and the second FFET has a storage voltage applied thereto that is indicative of the analog value. The saturation and storage voltages decay over time in accordance with a known decay function that is used to recover the original analog value when the pair of FFETs is read.

MacLeod, Todd C.↗
NASA NTRS2018

Detecting Spacecraft Anomalies Using LSTMs and Nonparametric Dynamic Thresholding

As spacecraft send back increasing amounts of telemetry data, improved anomaly detection systems are needed to lessen the monitoring burden placed on operations engineers and reduce operational risk. Current spacecraft monitoring systems only target a subset of anomaly types and often require costly expert knowledge to develop and maintain due to challenges involving scale and complexity. We demonstrate the effectiveness of Long Short-Term Memory (LSTMs) networks, a type of Recurrent Neural Network (RNN), in overcoming these issues using expert-labeled telemetry anomaly data from the Soil Moisture Active Passive (SMAP) satellite and the Mars Science Laboratory (MSL) rover, Curiosity. We also propose a complementary unsupervised and nonparametric anomaly thresholding approach developed during a pilot implementation of an anomaly detection system for SMAP, and offer false positive mitigation strategies along with other key improvements and lessons learned during development.

Soderstrom, Tom↗
NASA NTRS1994

A Perceptual Repetition Blindness Effect

Before concluding Repetition Blindness is a perceptual phenomenon, alternative explanations based on memory retrieval problems and report bias must be rejected. Memory problems were minimized by requiring a judgment about only a single briefly displayed field. Bias and sensitivity effects were empirically measured with an ROC-curve analysis method based on confidence ratings. Results from five experiments support the hypothesis that Repetition Blindness can be a perceptual phenomenon.

Hochhaus, Larry↗
NASA NTRS2004

Stress, Cognition, and Human Performance: A Literature Review and Conceptual Framework

The following literature review addresses the effects of various stressors on cognition. While attempting to be as inclusive as possible, the review focuses its examination on the relationships between cognitive appraisal, attention, memory, and stress as they relate to information processing and human performance. The review begins with an overview of constructs and theoretical perspectives followed by an examination of effects across attention, memory, perceptual-motor functions, judgment and decision making, putative stressors such as workload, thermals, noise, and fatigue and closes with a discussion of moderating variables and related topics. In summation of the review, a conceptual framework for cognitive process under stress has been assembled. As one might imagine, the research literature that addresses stress, theories governing its effects on human performance, and experimental evidence that supports these notions is large and diverse. In attempting to organize and synthesize this body of work, I was guided by several earlier efforts (Bourne & Yaroush, 2003; Driskell, Mullen, Johnson, Hughes, & Batchelor, 1992; Driskell & Salas, 1996; Haridcock & Desmond, 2001; Stokes & Kite, 1994). These authors should be credited with accomplishing the monumental task of providing focused reviews in this area and their collective efforts laid the foundation for this present review. Similarly, the format of this review has been designed in accordance with these previous exemplars. However, each of these previous efforts either simply reported general findings, without sufficient experimental illustration, or narrowed their scope of investigation to the extent that the breadth of such findings remained hidden from the reader. Moreover, none of these examinations yielded an architecture that adequately describes or explains the inter-relations between information processing elements under stress conditions.

Stress↗
NASA NTRS2005

Journal of Gravitational Physiology, Volume 12, Number 1

The following topics were covered: System Specificity in Responsiveness to Intermittent -Gx Gravitation during Simulated Microgravity in Rats; A Brief Overview of Animal Hypergravity Studies; Neurovestibular Adaptation to Short Radius Centrifugation; Effect of Artificial Gravity with Exercise Load by Using Short-Arm Centrifuge with Bicycle Ergometer as a Countermeasure Against Disused Osteoporosis; Perception of Body Vertical in Microgravity during Parabolic Flight; Virtual Environment a Behavioral and Countermeasure Tool for Assisted Gesture in Weightlessness: Experiments during Parabolic Flight; Artificial Gravity: Physiological Perspectives for Long-Term Space Exploration; Comparison of the Effects of DL-threo-Beta-Benzyloxyaspartate on the Glutamate Release from Synaptosomes before and after Exposure of Rats to Artificial Gravity; Do Perception and Postrotatory Vestibulo-Ocular Reflex Share the Same Gravity Reference?; Vestibular Adaptation to Changing Gravity Levels and the Orientation of Listing's Plane; Compound Mechanism Hypothesis on +Gz - Induced Brain Injury and Dysfunction of Learning and Memory; Environmental Challenge Impairs Prefrontal Brain Functions; Effect of 6-Days of Support Withdrawal on Characteristics of Balance Function; Hypergravity-Induced Changes of Neuronal Activities in CA1 Region of Rat Hippocampus; Audiological Findings in Antiorthostatic Position Modelling Microgravitation; Investigating Human Cognitive Performance during Spaceflight; The Relevance of the Minimization of Torque Exchange with the Environment in Weightlessness is Confirmed by Asimulation Study; Characteristics of the Eyes Pursuit Function during Readaptation to Terrestrial Gravity after Prolonged Flights Aboard the International Space Station; Comparison of Cognitive Performance Tests for Promethazine Pharmacodynamics in Human Subjects; Structural Reappraisal of Dendritic Tree of Cerebellar Purkinje Cell for Novel Functional Modeling of Elementary Sensorimotor Adaptive Processes; Orpheus 0 G or Ear in Microgravity to Establish Symptoms Concomittant of Inner and Middle Ear and Osteoporosis in Microgravity; Understanding Visual Perception in the Perspective of Gravity; Cortical Regions Associated with Orthostatic Stress in Conscious Humans; Restoration of Central Blood Volume: Application of a Simple Concept and Simple Device to Counteract Cardiovascular Instability in Syncope and Hemorrhage; WISE-2005: Integrative Cardiovascular Responses with LBNP during 60-Day Bed Rest in Women; Intracranial Pressure Increases during Weightlessness. A Parabolic Flights Study; Lower Limb & Portal Veins Echography for Predicting Risk of Thrombosis during a 90-D Bed Rest; Calf Tissue Liquid Stowage and Muscular and Deep Vein Distension in Orthostatic Tests after a 90-Day Head Down Bed Rest; Morphology of Brain Vessels in the Tail Suspended Rats Exposed to Intermittent 2 G; Alterations in Vasoreactivity of Femoral Artery Induced by Hindlimb Unweighting are Related to the Changes of Contractile Protein in Rats; and Respiratory Sinus Arrhythmia: A Marker of Decreased Parasympathetic Modulation after Short Duration.

Fuller, Charles A.↗
NASA NTRS2013

Effect of Temperature on the Deformation Behavior of B2 Austenite in a Polycrystalline Ni49.9Ti50.1 (at.Percent) Shape Memory Alloy

Superelasticity in austenitic B2-NiTi is of great technical interest and has been studied in the past by several researchers [1]. However, investigation of temperature dependent deformation in B2-NiTi is equally important since competing mechanisms of stress-induced martensite (SIM), retained martensite, plastic and deformation twinning can lead to unusual mechanical behaviors. Identification of the role of various mechanisms contributing to the overall deformation response of B2-NiTi is imperative to understanding and maturing SMA-enabled technologies. Thus, the objective of this work was to study the deformation of polycrystalline Ni49.9Ti50.1 (at. %) above A(sub f) (105 C) in the B2 state at temperatures between 165-440 C, and generate a B2 deformation map showing active deformation mechanisms in different temperature-stress regimes.

Garg, A.↗
NASA NTRS2004

Mitigation of High Altitude and Low Earth Orbit Radiation Effects on Microelectronics via Shielding or Error Detection and Correction Systems

The NASA Cooperative Agreement NAG4-210 was granted under the FY2000 Faculty Awards for Research (FAR) Program. The project was proposed to examine the effects of charged particles and neutrons on selected random access memory (RAM) technologies. The concept of the project was to add to the current knowledge of Single Event Effects (SEE) concerning RAM and explore the impact of selected forms of radiation on Error Detection and Correction Systems. The project was established as an extension of a previous FAR awarded to Prairie View A&M University (PVAMU), under the direction of Dr. Richard Wilkins as principal investigator. The NASA sponsored Center for Applied Radiation Research (CARR) at PVAMU developed an electronic test-bed to explore and quantify SEE on RAM from charged particles and neutrons. The test-bed was developed using 486DX microprocessor technology (PC-104) and a custom test board to mount RAM integrated circuits or other electronic devices. The test-bed had two configurations - a bench test version for laboratory experiments and a 400 Hz powered rack version for flight experiments. The objectives of this project were to: 1) Upgrade the Electronic Test-bed (ETB) to a Pentium configuration; 2) Accommodate more than only 8 Mbytes of RAM; 3) Explore Error Detection and Correction Systems for radiation effects; 4) Test modern RAM technologies in radiation environments.

Gupta, Kajal↗
NASA NTRS2021

Non-Volatile Memory Radiation Update

This work provides a current update of radiation testing activities on non-volatile memories in support of the NEPP program. Single-event effects data from heavy-ion testing is highlighted on two off-the-shelf high-speed memory modules.

Flash↗
NASA NTRS1983

Distributed multiport memory architecture

A multiport memory architecture is diclosed for each of a plurality of task centers connected to a command and data bus. Each task center, includes a memory and a plurality of devices which request direct memory access as needed. The memory includes an internal data bus and an internal address bus to which the devices are connected, and direct timing and control logic comprised of a 10-state ring counter for allocating memory devices by enabling AND gates connected to the request signal lines of the devices. The outputs of AND gates connected to the same device are combined by OR gates to form an acknowledgement signal that enables the devices to address the memory during the next clock period. The length of the ring counter may be effectively lengthened to any multiple of ten to allow for more direct memory access intervals in one repetitive sequence. One device is a network bus adapter which serially shifts onto the command and data bus, a data word (8 bits plus control and parity bits) during the next ten direct memory access intervals after it has been granted access. The NBA is therefore allocated only one access in every ten intervals, which is a predetermined interval for all centers. The ring counters of all centers are periodically synchronized by DMA SYNC signal to assure that all NBAs be able to function in synchronism for data transfer from one center to another.

Kohl, W. H.↗
NASA NTRS1978

Annual Conference on Nuclear and Space Radiation Effects, 15th, University of New Mexico, Albuquerque, N. Mex., July 18-21, 1978, Proceedings

Radiation effects in MOS devices and circuits are considered along with radiation effects in materials, space radiation effects and spacecraft charging, SGEMP, IEMP, EMP, fabrication of radiation-hardened devices, radiation effects in bipolar devices and circuits, simulation, energy deposition, and dosimetry. Attention is given to the rapid anneal of radiation-induced silicon-sapphire interface charge trapping, cosmic ray induced errors in MOS memory cells, a simple model for predicting radiation effects in MOS devices, the response of MNOS capacitors to ionizing radiation at 80 K, trapping effects in irradiated and avalanche-injected MOS capacitors, inelastic interactions of electrons with polystyrene, the photoelectron spectral yields generated by monochromatic soft X radiation, and electron transport in reactor materials.

Simons, M.↗
NASA NTRS2020

Status of NEPP Radiation Testing 3D NAND Flash

This work provides a current update of radiation testing activities on 3D NAND flash memories in support of the NEPP program. Single-event effects data from heavy-ion and low-energy proton testing is highlighted on a state of the art memory device.

Flash↗
NASA NTRS2020

Status of NEPP Radiation Testing 3D NAND Flash

This work provides a current update of radiation testing activities on 3D NAND flash memories in support of the NEPP program. Single-event effects data from heavy-ion and low-energy proton testing is highlighted on a state of the art memory device.

Flash↗
NASA NTRS2018

The Effect of Thin Film Adhesives on Mode I Interlaminar Fracture Toughness in Carbon Fiber Composites with Shape Memory Alloy Inserts

Shape Memory Alloy (SMA) was placed within Polymer Matrix Composite (PMC) panels alongside film adhesives to examine bonding. Double cantilever beam (DCB) testing was performed using ASTM D5528. C-scanning was performed before testing, modal acoustic emissions (MAE) were monitored during testing, and microscopy performed post-test. Data was analyzed using modified beam theory (MBT), compliance calibration (CC) and modified compliance calibration (MCC) methods. Fracture toughness for control specimens was higher than previously reported due to fiber-bridging. Specimens with SMAs and adhesives stabilized crack propagation. Results revealed SMA-bridging; a phenomenon mimicking fiber-bridging which increased the load and fracture toughness of SMA specimens.

Derek J Quade↗
NASA NTRS2019

The Effect of Thin Film Adhesives on Mode II Interlaminar Fracture Toughness in Carbon Fiber Composites with Shape Memory Alloy Inserts

A single sheet of nickel-titanium (NiTi) shape memory alloy (SMA) was introduced within an IM7/8552 polymer matrix composite (PMC) panel in conjunction with multiple thin film adhesives to promote the interfacial bond strength between the SMA and PMC. End notched flexure (ENF) testing was performed in accordance to ASTM D7905 method for evaluation of mode II interlaminar fracture toughness (GIIC) of unidirectional fiber-reinforced polymer matrix composites. Acoustic emissions (AE) were monitored during testing with two acoustic sensors attached to the specimens. The composite panels examined using scanning electron microscopy techniques after part failure. GIIC values for the control composite samples were found to be higher than those of samples with embedded SMA sheets. The presence of adhesives bonded to SMA sheets further diminished the GIIC values. AE values revealed poor bonding of the panels, with little to no signals during testing.

End Notched Flexure↗
NASA NTRS2019

A TID and SEE Characterization of Multi-Terabit COTS 3D NAND Flash

Single-event effects and total ionizing dose testing are described for a 32-layer NAND flash memory, in both SLC and MLC configurations, with special considerations for unique three-dimensional test results. Extraction of three-dimensional heavy-ion test data presents a unique visualization of angular effects in NAND flash. Pattern dependence differences between SLC and MLC mode are noted, along with slightly non-uniform angular cross-section results due to the complex volume. Finally, TID data under different operating and bias conditions shows that the failure point remains the higher-voltage erasure circuitry.

Flash Memory↗