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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Multiphysics Analyses of the Bottom Components of the 3D Printed Transformational Challenge Reactor

This research presents multi-physics analyses on the bottom components of the Transformational Challenge Reactor (TCR) facility. These components include the bottom axial reflector and the steel exit cone. The bottom axial reflector is made of pure silicon carbide elements hosting helium cooling channels These elements are 3D printed and therefore can host any arbitrary shape of the helium cooling channels. The design of the bottom reflector considers the neutronics and thermo-fluid dynamics performances as well as the manufacturing process optimization. More precisely, the best design of the bottom reflector reduces neutron leakage by avoiding straight cylindrical helium channels that facilitate neutron leakage, minimizes the helium flow pressure drop, and reduces the number of 3D printed silicon carbide pieces. The exit cone steel structure collects the hot helium from the bottom fuel assemblies and channels the cold helium to the top of the fuel assemblies. The steel simultaneous contact with hot and cold helium flows sets a large thermal gradient. Different designs of the exit cone are proposed to reduce the steel equivalent stress from the helium thermal load. The multi-physics analyses have been performed using Ansys Fluent, Ansys Mechanical, STAR-CCM+, and Serpent computer programs.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2024

Monte Carlo Explicitly Correlated Second-Order Many-Body Green’s Function Calculations of Semiconductor Band Gaps

A systematically converging series of ab initio, post-density-functional, size-consistent, electron-correlated approximations is desired for predictive computing of felectronic band structures of insulating, semiconducting, and metallic solids. A series that meets all of these desiderata (except the applicability to metals) is ab initio many-body Green's function theory based on Gaussian-type-orbital (GTO) basis sets. Here, its leading-order approximation, the second-order Green's function (GF2) method in the diagonal and frequency-independent approximations with the aug-cc-pVDZ basis set, is applied to the fundamental band gaps of three semiconductors (diamond, silicon, and silicon carbide in the zincblende structure) using cluster models. Corrections are made to the basis-set-incompleteness errors by the explicit-correlation (F12) ansatz (GF2-F12) for the valence band edges. The crystals are modeled as surface-passivated clusters of increasing sizes, whose wave functions are expanded by up to 2709 GTO basis functions. Immense computational costs of these calculations are overcome by the highly scalable stochastic algorithm of the Monte Carlo GF2-F12 method, whose operation cost per state increases only as a cubic power of system size, which has a tiny memory footprint and easily achieves near-perfect parallel efficiency on thousands of CPUs or on hundreds of GPUs. The correlated, F12-corrected highest-occupied and lowest-unoccupied molecular-orbital energy (HOMO-LUMO) gap is 5.78 ± 0.07 eV for C 87 H 76 as compared with the experimental value of the fundamental (indirect) band gap of bulk diamond at 5.48 eV. The correlated, F12-corrected HOMO-LUMO gaps for Si 75 H 76 and Si 32 C 43 H 76 are 2.56 ± 0.15 eV and 3.50 ± 0.12 eV, respectively, which are expected to decrease further with increasing cluster sizes. As a result, the experimental fundamental (indirect) band gaps of bulk silicon and silicon carbide are 1.17 eV and 2.42 eV, respectively.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Superior Fischer-Tropsch Performance of Uniform Cobalt Nanoparticles Deposited into Mesoporous SiC

Electrochemically-derived well-crystalline mesoporous silicon carbide (pSiC) was used to host cobalt nanoparticles and to show superior catalytic performance during the CO hydrogenation according to Fischer-Tropsch. Colloidal metal particles (9 ± 0.4 nm) were prepared independently before depositing them into pSiC and, for comparison purposes, into commercially available silica (Davisil) and foam-like MCF-17 supports. The Co/pSiC catalyst demonstrated the highest catalytic activity of 117 ?molCO gCo-1 s-1 at 220 °C in the Fischer-Tropsch reaction, while the silica supported cobalt samples showed about one order of magnitude less activity. A significant increase in the C5+ hydrocarbons selectivity for Co/pSiC was observed. The stable performance of the catalyst is attributed to the high dispersion of the active phase and the use of silicon carbide acting as a thermally conductive and chemically inert porous support.

lablokou, V. S.↗
DOE OSTI2026

Development of large-scale, 3D Printed high temperature ceramic material

Through this collaborative effort, a new 3D printing platform for ceramics called laser-induced slip casting (LIS) was explored and developed for improving the processing and manufacture of silicon carbide (SiC), a high temperature ceramic material. This method prints layers of ceramic slips/slurries with subsequent selective-laser heating to dry each layer to build a 3D structure. The completed and dried part is then sintered. This manufacturing process is inherently lower cost than alternative ceramic printing methods such as binder jet technology or stereolithography when it comes to the feedstock material but is more expensive than robocasting or direct ink writing. However, it has the potential to make more controlled parts with less defects compared to robocasting. The largest cost is the heating source for the printer. With this technique, there is potential to make large ceramic parts in a near-net shape. Further, there is no known commercial manufacturing of 3D printed ceramics that creates a large range of different high-density ceramics at large scale. The goals and outcomes for the development of the new printing technology were: 1) assessing the technology with alumina by characterizing coupons, 2) printing and sintering of silicon carbide (SiC), and 3) characterization and properties testing of materials printed and a scale-up of SiC part(s). Through this collaborative project, it was sought to provide the best solution to achieving highly dense and near-net shaped ceramic parts at large scale and reduced cost. The goal was to produce high density sintered materials for applications in defense, energy generating systems, armor, and wear parts using 3D printing methods. Variables including powder particle sizes, dispersant molecular weights (MWs), binders, printing parameters, and post processing were explored as well as the characterization of the physical properties (add specifics here).

36 MATERIALS SCIENCE↗
DOE OSTI2022

DESIGN AND TESTING OF DIMES CARBON ABLATION RODS IN THE DIII-D TOKAMAK

We present the design of ATJ graphite rods developed for ablation experiments under high heat flux (up to 50 MW/m2) in the lower divertor of the DIII-D tokamak, a magnetic plasma confinement device. This work is motivated by the need to test ablation models relevant to carbon-based thermal shields used in high-speed spacecraft atmospheric entries, where the heat fluxes encountered can be comparable to those achieved in the DIII-D divertor plasma. Several different designs for the flowfacing side of the rod are analyzed, including "sharp nose," "blunt," and "concave". The last shape is studied for its potential to lower heat fluxes at the rod surface by increased radiation from trapped neutrals and reduced parallel plasma pressure. We also analyze the possibility of applying a thin (approximately 30 microns) layer of silicon carbide (SiC) to the exposed part of several carbon ablation rods to benchmark its erosion calculations and lifetime predictions. Such calculations are of interest as SiC represents a promising material for both thermal protection systems (TPS) and a fusion plasma-facing material (PFM). Preliminary results from the DIII-D rod ablation experiments are also discussed.

Orlov, Dmitri M.↗
DOE OSTI2024

Lossless Phonon Transition Through GaN‐Diamond and Si‐Diamond Interfaces

Abstract Advancing Silicon (Si) technology beyond Moore's law through 3D architectures requires highly efficient heat management methods compatible with foundry processes. While continued increases in transistor density can be achieved through 3D architectures, self‐heating in the upper tiers degrades the performance. Self‐heating is a critical problem for high‐power, high‐frequency, wide bandgap, and ultra‐wide bandgap devices as well. Diamond, known for its exceptional thermal conductivity, offers a viable solution in both these cases. Since thermal boundary resistance (between the channel/junction and diamond plays a crucial role in overall thermal resistance, this study investigates various dielectrics for interface engineering, such as Silicon dioxide (SiO 2 ), amorphous‐ Silicon Carbide (a‐SiC), and Silicon Nitride (SiN x ), to make a phonon bridge at gallium nitride (GaN)‐diamond and Si‐diamond interfaces. The a‐SiC interlayer reduces diamond/GaN (<5 m 2 K per GW) and diamond/Si (<2 m 2 K per GW) thermal boundary resistances by linking low‐ and high‐frequency phonons, boosting phonon transport through the interface. Engineered interfaces enhance heat spreading from the channel/junction and rule out premature failure.

Malakoutian, Mohamadali↗
DOE OSTI2020

Performance and Techno-Economic Evaluation of a Three-Phase, 50-kW SiC-Based PV Inverter

The technical capabilities and benefits of silicon carbide (SiC) compared to silicon (Si) based power electronics converters as well as the premium associated with using SiC instead of Si are well understood. This work proves that the benefits provided by SiC, such as increased efficiency, would result in a lower levelized cost of energy (LCOE) compared to both commercially available, state-of-the-art inverters and the benchmark commercial system cost calculated for the U.S. Department of Energy Solar Energy Technologies Office's SunShot program. The LCOE is calculated to be same as the commercial benchmark despite the installed system cost being 8% more than the benchmark. The LCOE calculation is based on both experiential values obtained from testing the SiC photovoltaic (PV) inverter and on the bottoms-up modeled volume cost for the same 50-kW SiC-based inverter. The PV system used for the LCOE model is also explained, and the system cost breakout is presented in this paper. Furthermore, multiple scenarios with variations in the PV system are presented to show their effect on the system LCOE.

14 SOLAR ENERGY↗
DOE OSTI2026

PowerAmerica (Final Technical Report)

The U.S. Department of Energy’s Advanced Manufacturing Office (predecessor to AMMTO) established PowerAmerica in December 2014 to develop and accelerate the adoption of wide bandgap (WBG) semiconductor chips and power electronics in manufacturing. The objective was to spark early commercialization of energy efficient products; educate and train the workforce; create high-tech jobs; and nurture the growth of the U.S. WBG semiconductor manufacturing industry. PowerAmerica isled by North Carolina State University by way of a five-year, $140M cooperative agreement with DoE. This private-public partnership with DoE includes member companies ranging from startups and small-medium enterprises to large system integrators, world-class universities, and national labs. The WBG power electronic ecosystem formed by our diverse membership is focused on using advanced manufacturing to 1) lower the cost of silicon carbide and gallium nitride semiconductor devices to be comparable to silicon devices; 2) demonstrate the system benefits and energy efficiency advantages of WBG semiconductor power electronics through system demonstrations that validate their effectiveness; and 3) build an education pipeline for a skilled workforce to meet the future demand for emerging WBG semiconductor markets — and enhance U.S. economic competitiveness globally. PowerAmerica was initially funded in six budget periods, each lasting 12 to 18 months. By the end of Budget Period 6 (August 2023), PowerAmerica had achieved its major objectives in technology development, semiconductor device cost reduction, ecosystem growth and engagement, and education and workforce development. Through strategic foundry investments, we helped to establish the first U.S. SiC foundry (X-FAB) and supported a lab (Microchip) to start SiC volume production. We’ve helped bring together companies from different parts of the supply chain, resulting in several successful new partnerships and business relationships. Through projects with some of the largest manufacturers of energy-intensive equipment in the U.S. — John Deere, GE, United Technologies, Raytheon, Carrier, Toshiba, and others — we have successfully demonstrated the energy and system benefits of WBG technology. We have also harnessed the unique capabilities and facilities of national labs — the Naval Research Laboratory, National Renewable Energy Laboratory, and Argonne National Laboratory — to help solve challenging technical problems for industry. Thanks to our many webinars, tutorials, annual events, and presence at major energy and electronics conferences around the world, the PowerAmerica name has become synonymous with WBG technology advancement. The commercial interest in WBG technology is higher than ever; companies and governments around the world have announced hundreds of millions of dollarsin future investment to build capacity — and compete with silicon in many markets and applications. We have trained hundreds of engineering students, from universities across the U.S., through hands-on projects and WBG coursework. Working professionals have also benefited through the years from our many targeted short courses, tutorials, and technical webinars. In short, PowerAmerica has made great strides in each of our key objectives, and the organization has been operating without government or NC State

14 SOLAR ENERGY↗
DOE OSTI2024

Empirical Investigation of Properties for Additive Manufactured Aluminum Metal Matrix Composites

Laser additive manufacturing with mixed powders of aluminum alloy and silicon carbide (SiC) or boron carbide (B4C) is investigated in this experiment. With various mixing ratios of SiC/Al to form metal matrix composites (MMC), their mechanical and physical properties are empirically investigated. Parameters such as laser power, scan speed, scan pattern, and hatching space are optimized to obtain the highest density for each mixing ratio of SiC/Al. The mechanical and thermal properties are systematically investigated and compared with and without heat treatment. It shows that 2 wt% of SiC obtained the highest strength and Young’s modulus. Graded composite additive manufacturing (AM) of MMC is also fabricated and characterized. Various types of MMC devices, such as heat sink using graded SiC MMC and grid type three-dimensional (3D) neutron collimators using boron carbide (B4C), were also fabricated to demonstrate their feasibility for applications.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Highly Integrated Wide Bandgap Power Module for Next Generation Plug-In Vehicles (Final Report)

Wide bandgap devices are key enablers for high power density traction inverters. A highly integrated wide bandgap (WBG) power module enables higher temperature operation, higher inverter efficiency and overall smaller die area with the same power delivery. However, it requires careful design of the power module to take advantage of all the superior material properties that silicon carbide (SiC) provides over conventional silicon (Si) Insulated Gate Bipolar Transistor (IGBT) based design. This project developed an efficient and densely packed SiC power module for an automotive traction inverter application. Extensive study was performed to select the best performing SiC die considering a wide range of temperature variation, suitability to integrate into target packaging, robust body diode performance and overall high electrical efficiency. Multiple design ideas were explored to achieve lower stray inductance for both power loop and signal loop, uniform current distribution, compact form factor, and very high thermal performance. The final power module package includes all six inverter switches in the same module (six-pack) with die sintered at both bottom and top surfaces utilizing high performance substrate to achieve high electrical and thermal performance. Two power module variants were developed using 900 V and 1200 V devices for operating at two different high voltage levels (> 600 V HV battery). Both power modules were comprehensively characterized, and high efficiency operation of the inverter was confirmed through analysis. Finally, a complete functional inverter was built with the 1200V power modules using other essential components (HV capacitors, gate driver board, controller board, current sensor, connectors etc.) and tested using GM’s standard test procedure. There are several challenges associated with adopting WBG devices for high voltage operation. In order to assess and mitigate those challenges, GM and subrecipients of this project have conducted multiple detailed studies. This includes phase current reconstruction using integrated Rogowski coil, device junction temperature estimation using on-state gate resistance, modeling and testing the effect of high voltage and fast switching on motor insulation and bearings, partial discharge inception voltage measurement under different environmental conditions. Findings of all these studies are summarized in this report.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2024

Progress in Fast Modular Reactor Conceptual Design

The Fast Modular Reactor (FMR) is a 100-MW(thermal) gas-cooled fast reactor being developed by General Atomics Electromagnetic System with the goal of developing a FMR for flexible and dispatchable power to the U.S. electricity market in the mid-2030s. The conceptual design aims to develop and verify simplified design features. These include an inert helium gas coolant, pellet-loaded fuel rods, installations with air cooling as ultimate heat sink, and small and passive heat removal systems. The goal is to ensure the development of a safe, maintainable, cost-effective, and distributed nuclear energy-generating station. The baseline technologies selected to achieve this goal are a helium coolant that is an inert gas with no chemical reaction with structural components, not activated, single phase, enabling high-temperature operation and a high thermal efficiency Brayton cycle; conventional uranium dioxide (UO 2 ) fuel, which is the most widely used and well-known fuel material, capable of high burnup (100 MWd/kg) and a long fuel life; and silicon carbide composite (SiGA®) cladding and internal structures that are chemically inert in the helium environment, exceptionally radiation tolerant, and being derisked by accident tolerant fuel technology development. Further, the reactor was specifically designed with passive safety features, including high-temperature in-core materials and a reactor vessel cooling system consisting of cooling panels of naturally circulating water. The passive safety of the core was confirmed for the depressurized loss-of–forced cooling accident, which showed the peak cladding temperature at ~1600°C during the transient, which is below the current design limit of 1800°C. The conceptual design of the FMR has been conducted for the reactor system, vessel system, generator and turbomachine, instrumentation and control, residual heat removal system, plant service system, and containment, as well as pre-application licensing documents.

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗
DOE OSTI2021

Modeling Interface Debonding in Coated Fuel Particles with BISON

Here we introduce a meshed debonding model intended for use with tristructural isotropic (TRISO) fuel particles. The ability to better examine the potential effects of interface debonding between the coating layers will enable a host of investigations of the stress state when complex loading and interactions between coated fuel particles are taking place. In this work, the debonding model is discussed in detail. Then, simulations are presented to show the capabilities and limitations of the model. First, a traditional high-temperature gas reactor TRISO particle is considered. Then, a TRISO particle in a graphitic matrix is analyzed, followed by a TRISO particle in a silicon carbide matrix.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2024

High-Temperature Wireless Sensor Platform Powered by Energy Scavenging

This paper reports on the development of key components required for a self-powered oscillator unit designed to wirelessly transmit its signal under full insertion in high-temperature (HT) harsh-environments (HE), such as those present in power plants and industrial settings (metallurgic, oil extraction, molding, and aerospace). The oscillator employed a silicon carbide (SiC) power transistor and HT passive components on a screen-printed alumina circuit board capable of operation beyond 300 °C. The HT oscillator circuit was powered solely by in-situ energy scavenging thermoelectric generator (TEG) modules using passive cooling, eliminating the need for an external power supply or active cooling. In addition, a silicon-based external booster circuit was used to achieve the required TEG voltage regulation to test the TEG-powered HT oscillator circuit. The TEG-powered oscillator circuit was tested inside a non-metallic furnace from room temperature to over 300 °C for transmission of a wireless signal, which was detected outside the furnace at 11 ft (3.4 m). Such a wireless transmitting system powered only by in-situ TEGs, with no requirement for external power or active cooling, is very attractive for flexible, mobile stand-alone control and sensor units targeted for operation in HT HE conditions found in power plants and industrial settings.

20 FOSSIL-FUELED POWER PLANTS↗
DOE OSTI2024

Power Module Precursors and Prognostics

This project focuses on finding and utilizing electrical properties (precursors) of power electronic devices and modules whose changes have strong correlations with different modes and levels of degradations in order to realize online and lightweight state of health evaluation and fault diagnosis. Results from this project will contribute to higher safety, reliability, and power density of power electronic components. The approaches mainly include reviewing academic literature and industry practices for state of the art precursor identification and extraction, accelerated life cycles (ALC) of various power modules to create different degradations in-house, and developing techniques for gate-driver-integratable precursor detection circuit. In FY24, the results includes two sets of definitively detected aging precursors (on-state resistance and gate threshold voltage) for two sets of power modules respectively, controlled accelerated lifetime cycling of multiple silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) modules, and the development and validation of a gate voltage detection system.

ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2022

Medium Voltage Integrated Drive and Motor

The objective of this program was to design, build, and test a medium voltage (4,160VAC) high speed permanent magnet machine (HSPMM) and variable speed drive (VSD) that incorporates next generation 10kV silicon carbide (SiC) modules. The use of a HSPMM allows for high efficiency, small footprint, maintenance free operation while the SiC modules enable higher voltage operating conditions, improved efficiency, and small footprint.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2022

SolarPACES 2022

Performance of Silicon Carbide Fiber Composite Receiver Tubes for Concentrating Solar Power

14 SOLAR ENERGY↗
DOE OSTI2024

FET Junction Temperature Monitoring Using Novel On-Chip Solution

A novel junction temperature monitoring sensor is proposed and experimentally demonstrated for application in MOS-gate power devices. The sensor is created using the polycide gate electrode layer of the devices to create a temperature-sensitive resistor without any additional fabrication steps. The resistor is located on the field oxide with one end grounded at the device reference terminal to isolate it from the device current and voltage transients. It allows in-situ monitoring of the device junction temperature during active circuit operation. The technology has been implemented to monitor the junction temperature of Silicon Carbide Junction Barrier Schottky Field Effect Transistors (SiC JBSFETs) with the bi-directional FET (BiDFET).

Bidirectional switches, SiC bidirectional FET, BiD↗