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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13

High efficiency thin-film GaAs solar cells

Several oxidation techniques are discussed which have been found to increase the open circuit (V sub oc) of metal-GaAs Schottky barrier solar cells, the oxide chemistry, attempts to measure surface state parameters, the evolving characteristics of the solar cell as background contamination (has been decreased, but not eliminated), results of focused Nd/YAG laser beam recrystallization of Ge films evaporated onto tungsten, and studies of AMOS solar cells fabricated on sliced polycrystalline GaAs wafers. Also discussed are projected materials availability and costs for GaAs thin-film solar cells.

Stirn, R. J.↗

Photovoltaic Investigation on the Lunar Surface (PILS) – PV Testbed for Lunar Landers

The PILS (Photovoltaic Investigation on the Lunar Surface) platform provides an opportunity to test state of the art solar cell technologies on the lunar surface. The first PILS mission is scheduled to operate on the lunar surface at Lacus Mortis in late 2022 onboard the Astrobotic Peregrine lander. The platform, designed, built, and tested at the NASA Glenn Research Center, includes multiple solar cell technologies from various vendors that could be used for future lunar missions and a solar charging experiment to shape design considerations of high voltage solar arrays on the Moon. This presentation will describe the mission requirements, design considerations, and ground testing performed prior to spacecraft integration. Considerations for future PILS missions will also be discussed.

Solar power↗

Modeling of thin, back-wall silicon solar cells

The performance of silicon solar cells with p-n junctions on the nonilluminated surface (i.e., upside-down or back-wall cells) was calculated. These structures consisted of a uniformly shaped p-type substrate layer, a p(+)-type field layer on the front (illuminated) surface, and a shallow, n-type junction on the back (nonilluminated) surface. A four-layer solar cell model was used to calculate efficiency, open-circuit voltage, and short-circuit current. The effect on performance of p-layer thickness and resistivity was determined. The diffusion length was varied to simulate the effect of radiation damage. The results show that peak initial efficiencies greater than 15 percent are possible for cell thicknesses or 100 micrometers or less. After 10 years of radiation damage in geosynchronous orbit, thin (25 to 50 micrometers thick) cells made from 10 to 100 ohm cm material show the smallest decrease (approximately 10 percent) in performance.

Baraona, C. R.↗

Plasma engineering

Magnetohydrodynamic flow, surface properties, silicon solar cells, and thermoelectric properties of graphite compounds

Source record↗

Low-high junction theory applied to solar cells

Recent use of alloying techniques for rear contact formation has yielded a new kind of silicon solar cell, the back surface field (BSF) cell, with abnormally high open circuit voltage and improved radiation resistance. Several analytical models for open circuit voltage based on the reverse saturation current are formulated to explain these observations. The zero SRV case of the conventional cell model, the drift field model, and the low-high junction (LHJ) model can predict the experimental trends. The LHJ model applies the theory of the low-high junction and is considered to reflect a more realistic view of cell fabrication. This model can predict the experimental trends observed for BSF cells. Detailed descriptions and derivations for the models are included. The correspondences between them are discussed. This modeling suggests that the meaning of minority carrier diffusion length measured in BSF cells be reexamined.

Godlewski, M. P.↗

Low-high junction theory applied to solar cells

Recent use of alloying techniques for rear contact formation has yielded a new kind of silicon solar cell, the back surface field (BSF) cell, with abnormally high open-circuit voltage and improved radiation resistance. Several analytical models for open-circuit voltage based on the reverse saturation current are formulated to explain these observations. The zero surface recombination velocity (SRV) case of the conventional cell model, the drift field model, and the low-high junction (LHJ) model can predict the experimental trends. The LHJ model applies the theory of the low-high junction and is considered to reflect a more realistic view of cell fabrication. This model can predict the experimental trends observed for BSF cells.

Godlewski, M. P.↗

Back contacts for silicon-on-ceramic solar cells

Grooved substrate exposes back surface of photovoltaic cells, allowing dopant diffusion into surface and electrical contact. When substrate is coated successively with carbon and molten silicon, polycrystalline-silicon bridges form over grooves, but leave channels open. Best adhesion results when substrate grooves run perpendicular to direction of liquid-silicon layer and are closely spaced.

Schuller, T. L.↗

Development of improved wraparound contacts for silicon

A developmental process for fabricating 2 X 4 cm back surface field silicon solar cells featuring wraparound contacts and screen printed dielectric isolation is described. The process was then used to fabricate a number of cells for evaluation and study, as well as to establish the validity of the process sequence. While a number of cells exhibiting relatively good conversion efficiencies were produced, nearly all had low I-V curve factors for the level of efficiencies attained. Cells with conversion efficiencies of more than 15 percent (air mass zero and 25 C) had fill factors of only 0.76. Evidence as to the cause of this has not been conclusive, but is most probably linked to isolation failure in the wraparound dielectric and associated shunting problems.

Thornhill, J. W.↗

Effects of impurities on silicon solar-cell performance

Model analyses indicate that sophisticated solar cell designs (back surface fields, optical reflectors, surface passivation, and double layer antireflective coatings) can produce devices with conversion efficiencies above 20%. To realize this potential, the quality of the silicon from which the cells are made must be improved; and these excellent electrical properties must be maintained during device processing. As the cell efficiency rises, the sensitivity to trace contaminants also increases. For example, the threshold Ti impurity concentraion at which cell performance degrades is more than an order of magnitude lower for an 18% cell than for a 16% cell. Similar behavior occurs for numerous other metal species which introduce deep level traps that stimulate the recombination of photogenerated carriers in silicon. Purification via crystal growth in conjunction with gettering steps to preserve the large diffusion length of the as grown material can lead to the production of devices with efficiencies above 18%, as verified experimentally.

Hopkins, R. H.↗

Process research and development

The following major processes involved in the production of crystalline-silicon solar cells were discussed: surface preparation, junction formation, metallization, and assembly. The status of each of these processes, and the sequence in which these processes are applied, were described as they were in 1975, as they were in 1985, and what they might be in the future.

Bickler, D. B.↗

Two-Dimensional Planetary Surface Landers

We proposed to develop a new landing approach that significantly reduces development time and obviates the most complicated, most expensive, and highest-risk phase of a landing mission. The concept is a blanket- or carpet-like two-dimensional (2D) lander (~1-m × 1-m surface area and <1-cm thick) with a low mass/drag ratio, which allows the lander to efficiently shed its approach velocity and provide a more robust structure for landing integrity. The form factor of these landers allows dozens to be stacked on a single spacecraft for transport and distributed en masse to the surface. Lander surfaces will be populated on both sides by surface-mount, low-profile sensors and instruments, surface-mount telecom, solar cells, batteries, processors, and memory. Landers will also incorporate thin flexible electronics, made possible in part by printable electronics technology. The mass and size of these highly capable technologies further reduces the required stiffness and mass of the lander structures to the point that compliant, lightweight, robust landers capable of passive landings are possible. This capability avoids the costly, complex use of rockets, radar, and associated structure and control systems. This approach is expected to provide an unprecedented science payload mass to spacecraft mass ratio of approximately 80% (estimated based on current knowledge). This compared to ~1% for Pathfinder, ~17% for MER, and 22% for MSL rovers. Clearly, one difference is rovers vs. a lower capability lander. An outcome of the Phase I study is a clear roadmap for near-term demonstration and long-term technology development.

Landers↗

Mars Array Technology Experiment Developed to Test Solar Arrays on Mars

Solar arrays will be the power supply for future missions to the planet Mars, including landers, rovers, and eventually human missions to explore the Martian surface. Until Mars Pathfinder landed in July 1997, no solar array had been used on the surface. The MATE package is intended to measure the solar energy reaching the surface, characterize the Martian environment to gather the baseline information required for designing power systems for long-duration missions, and to quantify the performance and degradation of advanced solar cells on the Martian surface. To measure the properties of sunlight reaching the Martian surface, MATE incorporates two radiometers and a visible/NIR spectrometer. The radiometers consist of multiple thermocouple junctions using thin-film technology. These devices generate a voltage proportional to the solar intensity. One radiometer measures the global broadband solar intensity, including both the direct and scattered sunlight, with a field of view of approximately 130. The second radiometer incorporates a slit to measure the direct (unscattered) intensity radiation. The direct radiometer can only be read once per day, with the Sun passing over the slit. The spectrometer measures the global solar spectrum with two 256-element photodiode arrays, one Si sensitive in the visible range (300 to 1100 nm), and a second InGaAs sensitive to the near infrared (900 to 1700 nm). This range covers 86 percent of the total energy from the Sun, with approximately 5-nm resolution. Each photodiode array has its own fiber-optic feed and grating. Although the purpose of the MATE is to gather data useful in designing solar arrays for Mars surface power systems, the radiometer and spectrometer measurements are expected to also provide important scientific data for characterizing the properties of suspended atmospheric dust. In addition to measuring the solar environment of Mars, MATE will measure the performance of five different individual solar cell types and two different solar cell strings, to qualify advanced solar cell types for future Mars missions. The MATE instrument, designed for the Mars-2001 Surveyor Lander mission, contains a capable suite of sensors that will provide both scientific information as well as important engineering data on the operation of solar power systems on Mars. MATE will characterize the intensity and spectrum of the solar radiation on Mars and measure the performance of solar arrays in the Mars environment. MATE flight hardware was built and tested at the NASA Glenn Research Center and is ready for flight.

Landis, Geoffrey A.↗

Surface Sn(IV) Hydrolysis Improves Inorganic Sn–Pb Perovskite Solar Cells

Cesium tin-lead (Sn-Pb) perovskites are exceptional for their combined capabilities in unlocking ideal bandgaps for solar cells and mitigating the stability issue faced by their hybrid organic-inorganic counterparts. But the development of high-performance solar cells using these materials is retarded by their inherent high density of detrimental Sn(IV) defects. Herein, we demonstrate a sequential surface treatment method, which entails a Sn(II) halide treatment to displace the buried Sn(IV) ions underneath the film surface, followed by a H 2 O treatment to hydrolyze the displaced Sn(IV) ions. The surface treatment induces chemical and microstructural reconstructions that significantly improve the optoelectronic properties and stability of perovskites. As a result, a power conversion efficiency of 16.79% and a T 90 stability of 958 h are achieved, topping all previously reported performance parameters for inorganic Sn-Pb PSCs. This achievement further shortens the performance gap between all-inorganic and hybrid organic- inorganic Sn-Pb PSCs with sub-1.4 eV bandgaps.

14 SOLAR ENERGY↗

Influence of the Bulk Resistivity on Silicon Heterojunction Solar Cells and Module Reliability

Recent developments in industry on surface passivation open the possibility of using less doped substrates in silicon solar cells. In this report we investigate how the bulk resistivity affects the performance of silicon cells and the reliability of modules. Herein, n- and p-type silicon heterojunction cells with bulk resistivities between 3 and 15 000 Ωcm are studied. We measure the current–voltage characteristics of n-type cells across the resistivity range, and we find comparable responses to illumination intensities between 0.1 and 1 suns. The cells with bulk resistivities over 1000 Ωcm show breakdown voltages larger than -1000 V, almost two orders of magnitude higher than in typical commercial cells. Although modules have bypass-diodes to prevent cells from going into breakdown, higher breakdown voltages can improve the reliability of modules in case of bypass-diode failure and reduce the module cost by easing the number of bypass-diodes required. Finally, the cells have been submitted to light soaking. The float-zone p-type cells with bulk resistivities over 10 000 Ωcm are less sensitive to light-induced degradation than cells with bulk resistivities below 10 Ωcm. The former show to recover few hours after light soaking, while the latter recover only after dark annealing.

14 SOLAR ENERGY↗

Reduced Surface Recombination Velocity in Mixed-Cation Mixed-Halide Hybrid Perovskite Devices Leads to Improved Open-Circuit Voltage

Surface recombination plays an important role in perovskite solar cell performance.Despite rapid progress, the record power conversion efficiency (PCE, ~ 25.7%) for perovskite single-junction solar cells still lags behind its theoretical limit (~ 32%), largely due to the open circuit voltage (VOC) deficit that results from non-radiative recombination at the bulk of perovskite films and the interfaces between perovskite and transport layers. In this work, we show that (3-aminopropyl)trimethoxysilane (APTMS) surface passivation can reduce the surface recombination velocities (SRVs) of perovskite solar cells, thus improving device VOC and PCE.

perovskite solar cell, surface recombination, surf↗

Metallization for large-area solar cells

In large area, low cost solar cells of any type, the contact and grid structure metallization is an important factor which has an effect on the efficiency of the solar cell and its reliability. The present investigation is concerned with aspects of solar cell efficiency. An optimized metallization design leads to minimum total power loss, which is related to a simultaneous minimization of ohmic voltage drops and of shading of the front surface of the cell by the overlaid metal. The requirements regarding the design for a low-loss metallization pattern for the front surface of large area solar cells are represented by a set of design rules listed in a table. The total shading and voltage drop on such cells can be held to about 5%. However, not every metallization process is suited for meeting the requirements of the low-cost design. The low losses can be achieved only by use of several bus lines containing a bulk conductor, such as a wire.

Wolf, M.↗