Thermal expansion of some nickel and cobalt spinels and their solid solutions
Explore the source record for details and available documents.
Zaplatynsky, I.↗
SEARCH · Search NASA
Results for “Solid Solution”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Comparative resistance of Beta-Si3N4 solid solutions to molten silicon attack
Explore the source record for details and available documents.
Wills, R. R.↗
Effect of Si3N4 powder reactivity on the preparation of the Si2N2O-Al2O3 silicon aluminum oxynitride solid solution
Dense high-purity silicon aluminum oxynitride was prepared by reactive hot-pressing of an Si3N4-Al2O3-SiO2 mixture. The formation of a single-phase material was found to be critically dependent on the Si3N4 powder in the starting mixture. It is suggested that evolution of a chlorine- and nitrogen-containing species may enhance the reactivity of Si3N4 in this reaction. Densities of O prime sialons are very similar to that of Si2N2O, the widely quoted value in the ceramics literature of 3.1 g/cu cm for the density of Si2N2O being incorrect.
Sekercioglu, I.↗
Fast ion transport in silver halide solid solutions and multiphase systems
The incorporation of homovalent ions, e.g., I(-) in AgBr, leads to a substantial increase in ionic conductivity sigma. The charge compensation concept does not explain the enhancement. AgBr + 30 mol. % AgI exhibits sigma approximately 7/omega/cm at 380 C, which is approximately 170% larger than that of alpha-AgI, the best known superionic conductor, at its melting point. The purely elastic displacement caused by the foreign ion is suggested to be the origin of such a unique behavior. Furthermore, AgI-AgBr two-phase systems display sigma approximately 10 to the 3rd times higher than predicted by the classical theories.
Shahi, K.↗
III-V semiconductor solid solution single crystal growth
The feasibility and desirability of space growth of bulk IR semiconductor crystals for use as substrates for epitaxial IR detector material were researched. A III-V ternary compound (GaInSb) and a II-VI binary compound were considered. Vapor epitaxy and quaternary epitaxy techniques were found to be sufficient to permit the use of ground based binary III-V crystals for all major device applications. Float zoning of CdTe was found to be a potentially successful approach to obtaining high quality substrate material, but further experiments were required.
Gertner, E. R.↗
Effects of supercooling in the initial solidification of PbTe-SnTe solid solutions
Deviations from compositions anticipated by the thermal equilibrium phase diagram have been observed in Bridgman-grown crystals of Pb(1-x)Sn(x)Te, in the first to freeze region of the boule. A set of experiments were conducted to determine the extent of thermal supercooling of Pb(1-x)Sn(x)Te in a Bridgman-like configuration. The results of the compositional profiles and the supercooling measurements are consistent with a diffusionless transformation occurring at the onset of solidification, and the length of uncontrolled growth is inversely related to the temperature gradient of the furnace.
Fripp, A. L.↗
Microhardness and lattice parameter calibrations of the oxygen solid solutions of unalloyed alpha-titanium and Ti-6Al-2Sn-4Zr-2Mo
Standards were prepared for calibrating microanalyses of dissolved oxygen in unalloyed alpha-Ti and Ti-6Al-2Sn-4Zr-2Mo. Foils of both of these materials were homogenized for 120 hours in vacuum at 871 C following short exposures to the ambient atmosphere at 854 C that had partially oxidized the foils. The variation of Knoop microhardness with oxygen content was calibrated for both materials using 15-g and 5-g indentor loads. The unit-cell lattice parameters were calibrated for the unalloyed alpha-Ti. Example analyses demonstrate the usefulness of these calibrations and support an explanation of an anomaly in the lattice parameter variation. The results of the calibrations have been tabulated and summarized using predictive equations.
Wiedemann, K. E.↗
Growth of solid solution single crystals
Based on the thermophysical properties of Hg sub 1-x Cd sub x Te alloys, the reasons are discussed for the failure of conventional Bridgman-Stockbarger growth methods to produce high quality homogeneous crystals in the presence of Earth's gravity. The deleterious effects are considered which arise from the dependence of the thermophysical properties on temperature and composition and from the large amount of heat carried by the fused silica ampules. An improved growth method, developed to optimize heat flow conditions, is described and experimental results are presented. The problems associated with growth in a gravitational environment are discussed. The anticipated advantages of growth in microgravity are given and the implications of the requirements for spaceflight experiments are summarized.
Lehoczky, S. L.↗
Growth of solid solution single crystals
Based on the thermophysical properties of Hg sub 1-x Cd sub x Te alloys, the reasons are discussed for the failure of conventional Bridgman-Stockbarger growth methods to produce high quality homogeneous crystals in the presence of Earth's gravity. The deleterious effects are considered which arise from the dependence of the thermophysical properties on temperature and composition and from the large amount of heat carried by the fused silica ampules. An improved growth method, developed to optimize heat flow conditions, is described and experimental results are presented. The problems associated with growth in a gravitational environment are discussed. The anticipated advantages of growth in microgravity are given and the implications of the requirements for spaceflight experiments are summarized.
Lehoczky, S. L.↗
Growth of solid solution single crystals
Based on the thermophysical properties of Hg sub 1-x Cd sub x Te alloys, the reasons are discussed for the failure of conventional Bridgman-Stockbarger growth methods to produce high quality homogeneous crystals in the prescence of Earth's gravity. The deleterious effects are considered which arise from the dependence of the thermophysical properties on temperature and composition and from the large amount of heat carried by the fused silica ampules. An improved growth method, developed to optimize heat flow conditions, is described and experimental results are presented. The problems associated with growth in a gravitational environment are discussed. The anticipated advantages of growth in microgravity are given and the implications of the requirements for spaceflight experiments are summarized.
Lehoczky, S. L.↗
Diffusion of chromium in a cobalt-chromium solid solutions
Explore the source record for details and available documents.
Weeton, John W↗
Crystal Growth of Solid Solution HgCdTe Alloys
The growth of homogenous crystals of HgCdTe alloys is complicated by the large separation between their liquidus and solidus temperatures. Hg(1-x)Cd(x)Te is representative of several alloys which have electrical and optical properties that can be compositionally tuned for a number of applications. Limitations imposed by gravity during growth and results from growth under reduced conditions are described. The importance of residual accelerations was demonstrated by dramatic differences in compositional distribution observed for different attitudes of the space shuttle that resulted in different steady acceleration components.
Lehoczky, Sandor L.↗
Process-Parameter-Dependent Optical and Structural Properties of ZrO2MgO Mixed-Composite Films Evaporated from the solid Solution
The process-parameter-dependent optical and structural properties of ZrO2MgO mixed-composite material have been investigated. Optical properties were derived from spectrophotometric measurements. By use of atomic force microscopy, x-ray diffraction analysis, and energy-dispersive x-ray (EDX) analysis, the surface morphology, grain size distributions, crystallographic phases, and process-dependent material composition of films have been investigated. EDX analysis made evident the correlation between the oxygen enrichment in the films prepared at a high level of oxygen pressure and the very low refractive index. Since oxygen pressure can be dynamically varied during a deposition process, coatings constructed of suitable mixed-composite thin films can benefit from continuous modulation of the index of refraction. A step modulation approach is used to develop various multilayer-equivalent thin-film devices.
Sahoo, N. K.↗
Vapor Growth and Characterization of ZnSeTe Solid Solutions
Six ZnSe(1-x)Te(x) crystals were grown by the physical vapor transport technique. For each of the source material compositions, x = 0.10, 0.20 and 0.30, two crystals were grown - one under the horizontal and the other under the vertical stabilized configurations. The axial and radial compositional uniformity were measured by precision density measurements, wavelength dispersive X-ray spectroscopy (WDS) and optical transmission mappings. The measured radial ZnTe content was quite uniform for all the grown crystals except the horizontally grown crystal for x = 0.30. The WDS results on this crystal indicated a core with uniform ZnTe content, about 0.38, surrounded by a thin region of high ZnTe content with x = 0.8. This feature was confirmed by the SEM back scattering electron images. For the three source compositions the axial compositional variations for the vertically grown crystals were more uniform than that for the horizontally grown crystals. The measured compositions in the crystals grown from source composition of x = 0.10 suggest that the transport mechanism in the system can not be interpreted by a simple one-dimensional diffusion limited model.
Su, Ching-Hua↗
Optical Characterization of Bulk ZnSeTe Solid Solutions
Optical characterization was performed on wafers sliced from crystals of ZnSe, ZnTe and ZnSe (sub 1-x) Te (sub x) (0 less than x less than 0.4) grown by physical vapor transport technique. The energy band gaps at room temperature were determined from optical transmission measurements on 11 wafers. The best fit to the band gap vs. composition, x, data gives a bowing parameter of 1.336 which is between the value of 1.23 determined previously on ZnSeTe bulk crystals by reflectivity and the value of 1.621 reported on epilayers by photoconductivity. Low-temperature photoluminescence (PL) spectra were measured on 6 samples. The spectra of ZnSe and ZnTe were dominated by near band edge emissions and no deep donor-acceptor pairs were observed. The PL spectrum exhibited a broad emission for each of the ZnSe (sub 1-x) Te (sub x) samples, 0.09 less than x less than 0.39. For x = 0.09, this emission energy is about 0.2eV lower than the band gap energy measured at low temperature. As x increases the energy discrepancy gradually decreases and reduces to almost zero at x = 0.4. The single broad PL emission spectra and the spectra measured as a function of temperature were interpreted to be associated with the exciton bound to Te clusters because of the high Te content in these samples.
Su, Ching-Hua↗
Optical Characterization of Bulk ZnSeTe Solid Solutions
Optical characterization was performed on wafers sliced from crystals of ZnSe, ZnTe, and ZnSe(1-x)Te(x)(0 less than x less than 0.4) grown by physical vapor transport. Energy band gaps at room temperature were determined from optical transmission measurements on 11 wafers. A best fit curve to the band gap versus composition x data gives a bowing parameter of 1.45. This number lies between the value of 1.23 determined previously on ZnSeTe bulk crystals and the value of 1.621 reported on ZnSeTe epilayers. Low-temperature photoluminescence (PL) spectra were measured on six samples. The spectra of ZnSe and ZnTe were dominated by near band edge emissions and no deep donor-acceptor pairs were observed. The PL spectrum exhibited a broad emission for each of the ZnSe(1-x)Te(x) samples, 0.09 less than x less than 0.39. For x=0.09, this emission energy is about 0.2 eV lower than the band gap energy measured at low temperature. As x increases the energy discrepancy gradually decreases and reduces to almost zero at x=0.4. The single broad PL emission spectra and the spectra measured as a function of temperature were interpreted as being associated with the exciton bound to Te clusters because of the high Te content in these samples.
Su, Ching-Hua↗
Growth and Characterization of Bulk GeSi Solid Solutions
In this work we have grown and characterized several GeSi samples in order to investigate the effects that Silicon concentration, applied magnetic field, and liquid encapsulation have on crystalline quality. Characterization techniques include NDIC microscopy and microprobe spectroscopy. Two samples were grown with a Silicon concentration of approximately 3% and are compared to previous growths having a Silicon fraction of approximately 5%. Growth conditions for one of these samples was varied with the presence of an external applied magnetic field to investigate the possibility of magnetic field damping. A comparison between these two ingots, and with previously grown material, revealed no clear improvement in sample crystalline quality. Three additional samples were grown using a CaCl2 liquid encapsulation technique that produced GeSi material with improved structural quality over previous samples. Comparisons to prior non-encapsulation grown material, details of our methodology, and suggestions for further improvements are discussed.
Ritter, Timothy M.↗
Elevated Temperature Creep Deformation in Solid Solution <001> NiAL-3.6Ti Single Crystals
The 1100 to 1500 K slow plastic strain rate compressive properties of <001> oriented NiAl-3.6Ti single crystals have been measured, and the results suggests that two deformation processes exist. While the intermediate temperature/faster strain rate mechanism is uncertain, plastic flow at elevated temperature/slower strain rates in NiAl-3.6Ti appears to be controlled by solute drag as described by the Cottrell-Jaswon solute drag model for gliding b = a(sub 0)<101> dislocations. While the calculated activation energy of deformation is much higher (approximately 480 kJ/mol) than the activation energy for diffusion (approximately 290 kJ/mol) used in the Cottrell-Jaswon creep model, a forced temperature compensated - power law fit using the activation energy for diffusion was able to adequately (greater than 90%) predict the observed creep properties. Thus we conclude that the rejection of a diffusion controlled mechanism can not be simply based on a large numerical difference between the activation energies for deformation and diffusion.
Whittenberger, J. Daniel↗