A monolithic mosaic of photon sensors for solid-state imaging applications.
Mosaic of photosensors for solid state imaging, discussing electro-optical conversion, structure and characteristics
ELECTRO-OPTICS↗
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Results for “Solid state device”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Solid-state electrochemical cells based on charge transfer complexes.
Solid state electrochemical solar cell using various anode metals and charge transfer complexes as cathodes, noting I-V characteristics and discharge curves
SOLAR CELL↗
Electronic aperture control devised for solid state imaging system
Electronic means of performing the equivalent of automatic aperture control has been devised for the new class of television cameras that incorporates a solid state imaging device in the form of phototransistor mosaic sensors.
Anders, R. A.↗
High-temperature-materials study
Chemical vapor deposition of aluminum phosphides onto single crystals of silicon and gallium arsenide for producing high temperature operating solid state electronic devices
Baxter, R. D.↗
Improved solid state electron-charge-storage device
Storage device is applicable in memory systems and in high-resolution arrays for light-responsive image sensing. The device offers high yield in multiple arrays and allows charge release with light striking only the edge of a metal electrode.
Kuper, A. B.↗
Frequency shifting with a solid-state switching capacitor
Frequency shifting, commonly used in electronic signal processing, is applied in tuning, automatic frequency control, antenna element switching, phase shifting, etc. Frequency shifting can be accomplished economically and reliably with simple circuit comprising conventional resistor and solid-state switching device which can be equivalent to two capacitors, depending on switching state.
Mattauch, R. J.↗
Measurement of Elemental Abundance of Very Low Energy Solar Cosmic Rays
Heavy interplanetary particles were observed during a solar flare period between October 29 and November 4, 1972. The nuclear abundance was determined by a two parameter analysis (dE/dx vs E technique) of a thin window proportional counter - solid state detector device aboard the Explorer 47 (IMP-7) satellite. Energy spectra are given for C, O and Fe. The elemental abundance relative to oxygen is determined for carbon, neon, magnesium, silicon and the iron group in the energy range 0.62 to 6.9 MeV/nucleon. For the Fe/O ratio no energy dependence could be observed within the error limits.
Hovestadt, D.↗
Measurement of elemental abundance of very low energy solar cosmic rays
Heavy interplanetary particles (Z from 3 to 30) have been observed during a solar flare period between October 29 and November 4, 1972. The nuclear abundance has been determined by a two parameter analysis of a thin window proportional counter - solid state detector device aboard the Explorer 47 (IMP-7) satellite. Energy spectra are given for C, O and Fe. The elemental abundance relative to oxygen is determined for carbon, neon, magnesium, silicon and the iron group in the energy range 0.62 to 6.9 MeV/nucleon. For the Fe/O ratio no energy dependence could be observed within the error limits.
Hovestadt, D.↗
Advanced space system concepts and their orbital support needs (1980 - 2000). Volume 2: Final report
The results are presented of a study which identifies over 100 new and highly capable space systems for the 1980-2000 time period: civilian systems which could bring benefits to large numbers of average citizens in everyday life, much enhance the kinds and levels of public services, increase the economic motivation for industrial investment in space, expand scientific horizons; and, in the military area, systems which could materially alter current concepts of tactical and strategic engagements. The requirements for space transportation, orbital support, and technology for these systems are derived, and those requirements likely to be shared between NASA and the DoD in the time period identified. The high leverage technologies for the time period are identified as very large microwave antennas and optics, high energy power subsystems, high precision and high power lasers, microelectronic circuit complexes and data processors, mosaic solid state sensing devices, and long-life cryogenic refrigerators.
Bekey, I.↗
The 'depletion layer' of amorphous p-n junctions
It is shown that within reasonable approximations for the density of state distribution within the mobility gap of a:Si, a one-to-one correspondence exists between the electric field distribution in the transition region of an amorphous p-n junction and that in the depletion layer of a crystalline p-n junction. Thus it is inferred that the depletion layer approximation which leads to a parabolic potential distribution within the depletion layer of crystalline junctions also constitutes a fair approximation in the case of amorphous junctions. This fact greatly simplifies an analysis of solid-state electronic devices based on amorphous material (i.e., solar cells).
Von Roos, O.↗
Camera for Monitoring Vegetation
Video camera uses solid-state imaging devices and light filters to bring out subtle spectral differences between healthy and stressed vegetation differences not readily detectable with infrared film cameras. Camera employs two detector arrays. Video camera made small and easily portable. Eliminates need for refrigeration of film before use, and provides instantaneous output with no delay for film development.
Martin, T. Z.↗
The utilization of parallel processing in solving the inviscid form of the average-passage equation system for multistage turbomachinery
A procedure is outlined which utilizes parallel processing to solve the inviscid form of the average-passage equation system for multistage turbomachinery along with a description of its implementation in a FORTRAN computer code, MSTAGE. A scheme to reduce the central memory requirements of the program is also detailed. Both the multitasking and I/O routines referred to in this paper are specific to the Cray X-MP line of computers and its associated SSD (Solid-state Storage Device). Results are presented for a simulation of a two-stage rocket engine fuel pump turbine.
Mulac, Richard A.↗
PAN AIR: A computer program for predicting subsonic or supersonic linear potential flows about arbitrary configurations using a higher order panel method. Volume 2: User's manual (version 3.0)
A comprehensive description of user problem definition for the PAN AIR (Panel Aerodynamics) system is given. PAN AIR solves the 3-D linear integral equations of subsonic and supersonic flow. Influence coefficient methods are used which employ source and doublet panels as boundary surfaces. Both analysis and design boundary conditions can be used. This User's Manual describes the information needed to use the PAN AIR system. The structure and organization of PAN AIR are described, including the job control and module execution control languages for execution of the program system. The engineering input data are described, including the mathematical and physical modeling requirements. Version 3.0 strictly applies only to PAN AIR version 3.0. The major revisions include: (1) inputs and guidelines for the new FDP module (which calculates streamlines and offbody points); (2) nine new class 1 and class 2 boundary conditions to cover commonly used modeling practices, in particular the vorticity matching Kutta condition; (3) use of the CRAY solid state Storage Device (SSD); and (4) incorporation of errata and typo's together with additional explanation and guidelines.
Sidwell, Kenneth W.↗
Design and development of an all-solid-state laser unit for microgravity combustion applications
The laser-induced fluorescence (LIF) technique is a sensitive and noninvasive method for imaging of flames and for monitoring of temperature and the presence of transient molecular species in flames. Our research effort has two major objectives: (1) to use LIF to study the fundamentals of microgravity combustion via spectroscopic characterization of free radicals, and (2) to design and develop an all-solid-state portable laser unit for combustion studies in a microgravity environment. Well-characterized free radicals, namely hydroxyl (OH) and methoxy (CH3O), have analytically convenient bands that can be laser-excited in the 280-298 nm spectral region with the newly discovered solid-state tunable laser, which is based on the LiCaAIF6:Ce3+(LiCAF:Ce) single crystal pumped by the quadrupled (266 nm) output of a Q-switched YAG:Nd laser. The 266 nm YAG radiation (of about 10 mJ pulse energy) was split into two beams of about equal intensity, one used for photolysis of the free radical precursor and the other used for pumping the laser crystal. Tunability of the LiCAF:Ce laser was provided by a step-motor-driven Littrow-mounted diffraction grating. Laser excitation spectra of the CH3O radical was recorded in the 291.5-296.5 nm region with 0.15 cm(exp -1) resolution. Laboratory experiments have thus successfully shown that the idea of using the LiCAF:Ce laser as a dual-purpose photolysis and excitation source can pay rich dividends and that such a laser can be the center piece of an all-solid-state portable device that can be used for routine analytical investigations of microgravity combustion phenomena.
Kamal, Mohammed M.↗
Temperature Distribution Within a Defect-Free Silicon Carbide Diode Predicted by a Computational Model
Most solid-state electronic devices diodes, transistors, and integrated circuits are based on silicon. Although this material works well for many applications, its properties limit its ability to function under extreme high-temperature or high-power operating conditions. Silicon carbide (SiC), with its desirable physical properties, could someday replace silicon for these types of applications. A major roadblock to realizing this potential is the quality of SiC material that can currently be produced. Semiconductors require very uniform, high-quality material, and commercially available SiC tends to suffer from defects in the crystalline structure that have largely been eliminated in silicon. In some power circuits, these defects can focus energy into an extremely small area, leading to overheating that can damage the device. In an effort to better understand the way that these defects affect the electrical performance and reliability of an SiC device in a power circuit, the NASA Glenn Research Center at Lewis Field began an in-house three-dimensional computational modeling effort. The goal is to predict the temperature distributions within a SiC diode structure subjected to the various transient overvoltage breakdown stresses that occur in power management circuits. A commercial computational fluid dynamics computer program (FLUENT-Fluent, Inc., Lebanon, New Hampshire) was used to build a model of a defect-free SiC diode and generate a computational mesh. A typical breakdown power density was applied over 0.5 msec in a heated layer at the junction between the p-type SiC and n-type SiC, and the temperature distribution throughout the diode was then calculated. The peak temperature extracted from the computational model agreed well (within 6 percent) with previous first-order calculations of the maximum expected temperature at the end of the breakdown pulse. This level of agreement is excellent for a model of this type and indicates that three-dimensional computational modeling can provide useful predictions for this class of problem. The model is now being extended to include the effects of crystal defects. The model will provide unique insights into how high the temperature rises in the vicinity of the defects in a diode at various power densities and pulse durations. This information also will help researchers in understanding and designing SiC devices for safe and reliable operation in high-power circuits.
Kuczmarski, Maria A.↗
Potential High-Temperature Shape-Memory-Alloy Actuator Material Identified
Shape-memory alloys are unique "smart materials" that can be used in a wide variety of adaptive or "intelligent" components. Because of a martensitic solid-state phase transformation in these materials, they can display rather unusual mechanical properties including shape-memory behavior. This phenomenon occurs when the material is deformed at low temperatures (below the martensite finish temperature, Mf) and then heated through the martensite-to-austenite phase transformation. As the material is heated to the austenite finish temperature Af, it is able to recover its predeformed shape. If a bias is applied to the material as it tries to recover its original shape, work can be extracted from the shape-memory alloy as it transforms. Therefore, shape-memory alloys are being considered for compact solid-state actuation devices to replace hydraulic, pneumatic, or motor-driven systems.
Noebe, Ronald D.↗
Solid state UV detectors
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UV detectors Origins solid state devices microchan↗
Methods for growth of relatively large step-free SiC crystal surfaces
A method for growing arrays of large-area device-size films of step-free (i.e., atomically flat) SiC surfaces for semiconductor electronic device applications is disclosed. This method utilizes a lateral growth process that better overcomes the effect of extended defects in the seed crystal substrate that limited the obtainable step-free area achievable by prior art processes. The step-free SiC surface is particularly suited for the heteroepitaxial growth of 3C (cubic) SiC, AlN, and GaN films used for the fabrication of both surface-sensitive devices (i.e., surface channel field effect transistors such as HEMT's and MOSFET's) as well as high-electric field devices (pn diodes and other solid-state power switching devices) that are sensitive to extended crystal defects.
Neudeck, Philip G.↗