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At least 235 records · Page 13

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NASA NTRS1974

Low-high junction theory applied to solar cells

Recent use of alloying techniques for rear contact formation has yielded a new kind of silicon solar cell, the back surface field (BSF) cell, with abnormally high open-circuit voltage and improved radiation resistance. Several analytical models for open-circuit voltage based on the reverse saturation current are formulated to explain these observations. The zero surface recombination velocity (SRV) case of the conventional cell model, the drift field model, and the low-high junction (LHJ) model can predict the experimental trends. The LHJ model applies the theory of the low-high junction and is considered to reflect a more realistic view of cell fabrication. This model can predict the experimental trends observed for BSF cells.

Godlewski, M. P.↗

NASA NTRS2009

Estimation of Faults in DC Electrical Power System

This paper demonstrates a novel optimization-based approach to estimating fault states in a DC power system. Potential faults changing the circuit topology are included along with faulty measurements. Our approach can be considered as a relaxation of the mixed estimation problem. We develop a linear model of the circuit and pose a convex problem for estimating the faults and other hidden states. A sparse fault vector solution is computed by using 11 regularization. The solution is computed reliably and efficiently, and gives accurate diagnostics on the faults. We demonstrate a real-time implementation of the approach for an instrumented electrical power system testbed, the ADAPT testbed at NASA ARC. The estimates are computed in milliseconds on a PC. The approach performs well despite unmodeled transients and other modeling uncertainties present in the system.

Gorinevsky, Dimitry↗

NASA NTRS1982

Modeling and analysis of several classes of self-oscillating inverters. I - State-plane representations. II - Model extension, classification, and duality relationships

The present investigation is concerned with an important class of power conditioning networks, taking into account self-oscillating dc-to-square-wave transistor inverters. The considered circuits are widely used both as the principal power converting and processing means in many systems and as low-power analog-to-discrete-time converters for controlling the switching of the output-stage semiconductors in a variety of power conditioning systems. Aspects of piecewise-linear modeling are discussed, taking into consideration component models, and an equivalent-circuit model. Questions of singular point analysis and state plane representation are also investigated, giving attention to limit cycles, starting circuits, the region of attraction, a hard oscillator, and a soft oscillator.

Lee, F. C. Y.↗

NASA NTRS1997

Computer Simulation of Microwave Devices

The accurate simulation of cold-test results including dispersion, on-axis beam interaction impedance, and attenuation of a helix traveling-wave tube (TWT) slow-wave circuit using the three-dimensional code MAFIA (Maxwell's Equations Solved by the Finite Integration Algorithm) was demonstrated for the first time. Obtaining these results is a critical step in the design of TWT's. A well-established procedure to acquire these parameters is to actually build and test a model or a scale model of the circuit. However, this procedure is time-consuming and expensive, and it limits freedom to examine new variations to the basic circuit. These limitations make the need for computational methods crucial since they can lower costs, reduce tube development time, and lessen limitations on novel designs. Computer simulation has been used to accurately obtain cold-test parameters for several slow-wave circuits. Although the helix slow-wave circuit remains the mainstay of the TWT industry because of its exceptionally wide bandwidth, until recently it has been impossible to accurately analyze a helical TWT using its exact dimensions because of the complexity of its geometrical structure. A new computer modeling technique developed at the NASA Lewis Research Center overcomes these difficulties. The MAFIA three-dimensional mesh for a C-band helix slow-wave circuit is shown.

Kory, Carol L.↗

NASA NTRSDate not supplied

Predictability of the Minimum Sea Ice Extent from Late Winter Fram Strait Ice Export: Model vs Observations

Late winter coastal divergence along the Eurasian coastline (referred to as the ice factory) – or the Fram Strait ice export, a proxy for coastal divergence in the ice factory – is a skillful predictor of the minimum sea ice extent (Williams et al., 2016; Brunette et al., 2018; Sesternikov and, 1979). Coastal divergence leads to the formation of coastal polynya where new ice grows but to a thickness that is not large enough to survive the following summer melt. This signal is then amplified by the ice albedo feedback and leads to more open water at the end of the summer melt season. In this thesis project, we will identify if this source of predictive skill in the seasonal forecast of the minimum sea ice extent is present in General Circulation Models, more precisely in the CESM2-LE, GISS-E2.1-G, GFDL FLOR-LE, CNRM-CM6-1 and the CanESM5. Since even small biases in the large-scale atmospheric circulation simulated by a model can short circuit this coupling between dominant modes of atmospheric variability (NAO and AO), coastal divergence along the Eurasian coastline, Fram Strait ice export and therefore seasonal forecasting skill of the model, failure to reproduce this coupling observed in the real Arctic will be used to identify biases in GCM. Preliminary results show that subtle changes in the large-scale atmospheric circulation leads to opposite statistical relationship between Fram Strait ice area export, coastal divergence along the Eurasian coastline, and seasonal predictability of the minimum sea ice extent both in the CESM2-LE and the GISS-E2.1-G models. Differences are linked with the partitioning between recirculation within the Beaufort Gyre, ice exported through Fram Strait and ridging north of the Canadian Arctic Archipelago.

Sea ice↗

NASA NTRS2005

Modeling of a Metal-Ferroelectric-Semiconductor Field-Effect Transistor NAND Gate

Considerable research has been performed by several organizations in the use of the Metal- Ferroelectric-Semiconductor Field-Effect Transistors (MFSFET) in memory circuits. However, research has been limited in expanding the use of the MFSFET to other electronic circuits. This research project investigates the modeling of a NAND gate constructed from MFSFETs. The NAND gate is one of the fundamental building blocks of digital electronic circuits. The first step in forming a NAND gate is to develop an inverter circuit. The inverter circuit was modeled similar to a standard CMOS inverter. A n-channel MFSFET with positive polarization was used for the n-channel transistor, and a n-channel MFSFET with negative polarization was used for the p-channel transistor. The MFSFETs were simulated by using a previously developed current model which utilized a partitioned ferroelectric layer. The inverter voltage transfer curve was obtained over a standard input of zero to five volts. Then a 2-input NAND gate was modeled similar to the inverter circuit. Voltage transfer curves were obtained for the NAND gate for various configurations of input voltages. The resultant data shows that it is feasible to construct a NAND gate with MFSFET transistors.

Phillips, Thomas A.↗

NASA NTRS1992

Modelling and design for PM/EM magnetic bearings

A mathematical model of a permanent magnet/electromagnet (PM/EM) radially active bearing is presented. The bearing is represented by both a reluctance model and a stiffness model. The reluctance model analyzes the magnetic circuit of the PM/EM bearings. By combining the two models, the performance of the bearing can be predicted given geometric dimensions, permanent magnet strength, and the parameters of the EM coils. The overall bearing design including the PM and EM design is subject to the performance requirement and physical constraints. A study of these requirements and constraints is discussed. The PM design is based on the required magnetic flux for proper geometric dimensions and magnet strength. The EM design is based on the stability and force slew rate consideration, and dictates the number of turns for the EM coils and the voltage and current of the power amplifier. An overall PM/EM bearing design methodology is proposed and a case study is also demonstrated.

Pang, D.↗

NASA NTRS2002

On Polymorphic Circuits and Their Design Using Evolutionary Algorithms

This paper introduces the concept of polymorphic electronics (polytronics) - referring to electronics with superimposed built-in functionality. A function change does not require switches/reconfiguration as in traditional approaches. Instead the change comes from modifications in the characteristics of devices involved in the circuit, in response to controls such as temperature, power supply voltage (VDD), control signals, light, etc. The paper illustrates polytronic circuits in which the control is done by temperature, morphing signals, and VDD respectively. Polytronic circuits are obtained by evolutionary design/evolvable hardware techniques. These techniques are ideal for the polytronics design, a new area that lacks design guidelines, know-how,- yet the requirements/objectives are easy to specify and test. The circuits are evolved/synthesized in two different modes. The first mode explores an unstructured space, in which transistors can be interconnected freely in any arrangement (in simulations only). The second mode uses a Field Programmable Transistor Array (FPTA) model, and the circuit topology is sought as a mapping onto a programmable architecture (these experiments are performed both in simulations and on FPTA chips). The experiments demonstrated the synthesis. of polytronic circuits by evolution. The capacity of storing/hiding "extra" functions provides for watermark/invisible functionality, thus polytronics may find uses in intelligence/security applications.

Stoica, Adrian↗

NASA NTRS1985

Effect of solar-cell junction geometry on open-circuit voltage

Simple analytical models have been found that adequately describe the voltage behavior of both the stripe junction and dot junction grating cells as a function of junction area. While the voltage in the former case is found to be insensitive to junction area reduction, significant voltage increases are shown to be possible for the dot junction cell. With regard to cells in which the junction area has been increased in a quest for better performance, it was found that (1) texturation does not affect the average saturation current density J0, indicating that the texturation process is equivalent to a simple extension of junction area by a factor of square root of 3 and (2) the vertical junction cell geometry produces a sizable decrease in J0 that, unfortunately, is more than offset by the effects of attendant areal increases.

Weizer, V. G.↗

NASA NTRS1991

Analysis and characterizations of planar transmission structures and components for superconducting and monolithic integrated circuits

The analysis and modeling of superconducting planar transmission lines were performed. Theoretically, the highest possible Q values of superconducting microstrip line was calculated and, as a result, it provided the Q value that the experiment can aim for. As an effort to search for a proper superconducting transmission line structure, the superconducting microstrip line and coplanar waveguide were compared in terms of loss characteristics and their design aspects. Also, the research was expanded to a superconducting coplanar waveguide family in the microwave packaging environment. Theoretically, it was pointed out that the substrate loss is critical in the superconducting transmission line structures.

Itoh, Tatsuo↗

NASA NTRS2017

Coilgun Acceleration Model Containing Interactions Between Multiple Coils

Electromagnetic (EM) accelerators have the potential to fill a performance range not currently being met by conventional chemical and electric propulsion systems by providing a specific impulse of 600-1000 seconds and a thrust-to-power ratio greater than 200 mN/kW. A propulsion system based on EM acceleration of small projectiles has the traditional advantages of using a pulsed system, including precise control over a range of thrust and power levels as well as rapid response and repetition rates. Furthermore, EM accelerators have lower power requirements than conventional electric propulsion systems since no plasma creation is necessary. A coilgun is a specific type of EM device where a high-current pulse through a coil of wire interacts with a conductive projectile via an induced magnetic field to accelerate the projectile. There are no physical or electrical connections to the projectile, which leads to less system degradation and a longer life expectancy. Multi-staging a coilgun by adding multiple turns on a single coil or on the projectile increases the inductance, thus permitting acceleration of the projectile to higher velocities. Previously, a simplified problem of modeling an inductively-coupled, single-coil coilgun using a circuit-based analysis coupled to the one-dimensional momentum equation through Lenz's law was solved; however, the analysis was only conducted on uncoupled coils. The problem is significantly more complicated when multiple, independently-powered coils simultaneously operate and interact with each other and the projectile through induced magnetic fields. This paper presents a multi-coil model developed with the magnetostatic finite element solver QuickField. In the model, mutual inductance values between pairs of conductors were found by first computing the magnetic field energy for different cases where individual coils or multiple coils carry current, then integrating over the entire finite element domain for each case, and finally using the definition of inductive energy storage to solve for the self and mutual inductance. The electric circuit model is coupled to the projectile through Lenz's law, with the coils coupled through mutual inductance but able to be independently triggered at different times to optimize the acceleration profile. This initial model to predict the behavior of a projectile's acceleration through a coupled, multi-coil coilgun increases the potential of building a highly efficient coilgun thruster with key advantages over other EM thruster systems, thus making it a promising candidate for satellite main propulsion or attitude control thrusters.

Liu, Connie↗

NASA NTRS2001

Electronic Model of a Ferroelectric Field Effect Transistor

A pair of electronic models has been developed of a Ferroelectric Field Effect transistor. These models can be used in standard electrical circuit simulation programs to simulate the main characteristics of the FFET. The models use the Schmitt trigger circuit as a basis for their design. One model uses bipolar junction transistors and one uses MOSFET's. Each model has the main characteristics of the FFET, which are the current hysterisis with different gate voltages and decay of the drain current when the gate voltage is off. The drain current from each model has similar values to an actual FFET that was measured experimentally. T'he input and o Output resistance in the models are also similar to that of the FFET. The models are valid for all frequencies below RF levels. No attempt was made to model the high frequency characteristics of the FFET. Each model can be used to design circuits using FFET's with standard electrical simulation packages. These circuits can be used in designing non-volatile memory circuits and logic circuits and is compatible with all SPICE based circuit analysis programs. The models consist of only standard electrical components, such as BJT's, MOSFET's, diodes, resistors, and capacitors. Each model is compared to the experimental data measured from an actual FFET.

MacLeod, Todd C.↗

NASA NTRS1995

Simulation of patch and slot antennas using FEM with prismatic elements and investigations of artificial absorber mesh termination schemes

Year 1 progress can be characterized with four major achievements which are crucial toward the development of robust, easy to use antenna analysis code on doubly conformal platforms. (1) A new FEM code was developed using prismatic meshes. This code is based on a new edge based distorted prism and is particularly attractive for growing meshes associated with printed slot and patch antennas on doubly conformal platforms. It is anticipated that this technology will lead to interactive, simple to use codes for a large class of antenna geometries. Moreover, the codes can be expanded to include modeling of the circuit characteristics. An attached report describes the theory and validation of the new prismatic code using reference calculations and measured data collected at the NASA Langley facilities. The agreement between the measured and calculated data is impressive even for the coated patch configuration. (2) A scheme was developed for improved feed modeling in the context of FEM. A new approach based on the voltage continuity condition was devised and successfully tested in modeling coax cables and aperture fed antennas. An important aspect of this new feed modeling approach is the ability to completely separate the feed and antenna mesh regions. In this manner, different elements can be used in each of the regions leading to substantially improved accuracy and meshing simplicity. (3) A most important development this year has been the introduction of the perfectly matched interface (PMI) layer for truncating finite element meshes. So far the robust boundary integral method has been used for truncating the finite element meshes. However, this approach is not suitable for antennas on nonplanar platforms. The PMI layer is a lossy anisotropic absorber with zero reflection at its interface. (4) We were able to interface our antenna code FEMA_CYL (for antennas on cylindrical platforms) with a standard high frequency code. This interface was achieved by first generating equivalent magnetic currents across the antenna aperture using the FEM code. These currents were employed as the sources in the high frequency code.

Gong, J.↗

NASA NTRS1975

The probability of a correct output from a combinational circuit

The paper discusses two methods to evaluate the signal reliability of the output of logical circuits. It is known that faults present in a circuit will not always cause the output of the circuit to be incorrect. The first method evaluates the contribution of each fault to the reliability of the circuit and requires the enumeration of the behavior of each fault in the entire fault set. The use of McCluskey and Clegg's characterization of faulty networks by evaluating the functional equivalence classes of the network is a way to reduce the amount of computation involved. The second method uses a probabilistic model of logical circuits and consists of straightforward operations which can easily be automated. The method also yields the signal reliability and has the capability of very easily specifying the individual fault probabilities of all the circuit lines independently.

Ogus, R. C.↗

NASA NTRS2011

Modeling from Local to Subsystem Level Effects in Analog and Digital Circuits Due to Space Induced Single Event Transients

Single Event Transients in analog and digital electronics from space generated high energetic nuclear particles can disrupt either temporarily and sometimes permanently the functionality and performance of electronics in space vehicles. This work first provides some insights into the modeling of SET in electronic circuits that can be used in SPICE-like simulators. The work is then directed to present methodologies, one of which was developed by this author, for the assessment of SET at different levels of integration in electronics, from the circuit level to the subsystem level.

State Transistion Model.↗

NASA NTRS1984

Model of solar cell proton damage

A short circuit current (I sub sc) degradation model for gallium arsenide (GaAs) solar cells irradiated by protons from low energy to 100 MeV was developed. This model was found to be satisfactory in predicting the I sub sc degradation of GaAs cells, but not that of silicon (Si) cells. A modification to the aforementioned model that preserves the optical wavelength dependency in the photogeneration of minority carrier pairs was described herein. Spectral Si and GaAs response and I sub sc for the Si and GaAs solar cells were discussed, and also were presented in graph form. The overall predictability of the modified model was deemed to be satisfactory.

Yaung, J. Y.↗

NASA NTRS1979

Analysis of the interaction of an electron beam with a solar cell. III - The effect of spacial variations of the number density of recombination centers on SEM measurements

By means of an exactly soluble model the short circuit current generated by a scanning electron microscope in a P-N junction has been determined in cases where the trap density is inhomogeneous. The diffusion length for minority carriers becomes then dependent on the spacial coordinates. It is shown that in this case the dependence of the Isc on characteristic parameters as cell thickness, distance of the beam excitation spot from ohmic contacts, etc., becomes very intricate. This fact precludes the determination of the local diffusion length in the usual manner. Although the model is somewhat simplified in order to make it amenable to exact solutions, it is nevertheless realistic enough to lead to the conclusion that SEM measurements of bulk transport parameters in inhomogeneous semiconductor material are impractical since they may lead to serious errors in the interpretation of the data by customary means.

Von Roos, O.↗

NASA NTRS1977

Computer aided nonlinear electrical networks analysis

Techniques used in simulating an electrical circuit with nonlinear elements for use in computer-aided circuit analysis programs are described. Elements of the circuit include capacitors, resistors, inductors, transistors, diodes, and voltage and current sources (constant or time varying). Simulation features are discussed for dc, ac, and/or transient circuit analysis. Calculations are based on the model approach of formulating the circuit equations. A particular solution of transient analysis for nonlinear storage elements is described.

Slapnicar, P.↗