Study of dopants for radiation-resistant silicon Final report
Radiation effects on electrical properties of both aluminum and lithium doped bulk silicon
Bass, R. F.↗
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One-electron and phonon-assisted tunneling in n-Ge Schottky barriers
Metal-Ge n-type semiconductor tunnel junctions, discussing Sb and As doped units and conductance and barrier heights air cleavage effects
Davis, L. C.↗
Aspects of silicon bulk lifetimes
The best lifetimes attained for bulk crytalline silicon as a function of doping concentrations are analyzed. It is assumed that the dopants which set the Fermi level do not contribute to the recombination traffic which is due to the unknown defect. This defect is assumed to have two charge states: neutral and negative, the neutral defect concentration is frozen-in at some temperature T sub f. The higher doping concentrations should include the band-band Auger effect by using a generalization of the Shockley-Read-Hall (SRH) mechanism. The generalization of the SRH mechanism is discussed. This formulation gives a straightforward procedure for incorporating both band-band and band-trap Auger effects in the SRH procedure. Two related questions arise in this context: (1) it may sometimes be useful to write the steady-state occupation probability of the traps implied by SRH procedure in a form which approximates to the Fermi-Dirac distribution; and (2) the effect on the SRH mechanism of spreading N sub t levels at one energy uniformly over a range of energies is discussed.
Landsberg, P. T.↗
Method of mitigating titanium impurities effects in p-type silicon material for solar cells
Microstructural evaluation tests performed on Cu-doped, Ti-doped and Cu/Ti doped p-type silicon single crystal wafers, before and after the solar cell fabrication, and evaluation of both dark forward and reverse I-V characteristic records for the solar cells produced from the corresponding silicon wafers, show that Cu mitigates the unfavorable effects of Ti, and thus provides for higher conversion efficiency, thereby providing an economical way to reduce the deleterious effects of titanium, one of the impurities present in metallurgical grade silicon material.
Salama, A. M.↗
Silicon solar cells with high open-circuit voltage
Open-circuit voltages as high as 0.645 V (AM0-25 C) have been obtained by a new process developed for low-resistivity silicon. The method utilizes high-dose phosphorus implantation, followed by furnace annealing and simultaneous oxide growth to form high-efficiency, shallow junctions. The effect of the thermally grown oxide is a reduction of surface recombination velocity; the oxide also acts as a moderately efficient AR coating. Boron doped silicon with resistivities from 0.1 to 0.3 ohm-cm has been processed according to this sequence; results show highest open-circuit voltage is attained with 0.1-ohm-cm starting material. The effects of bandgap narrowing, caused by high doping concentrations in the junction, were also investigated by implanting phosphorus over a wide range of dose levels.
Minnucci, J. A.↗
Design of high-efficiency, radiation-hard, GaInP/GaAs solar cells
In recently years, Ga(0.5)In((0.5)P/GaAs cells have drawn increased attention both because of their high efficiencies and because they are well suited for space applications. They can be grown and processed as two-junction devices with roughly twice the voltage and half the current of GaAs cells. They have low temperature coefficients, and have good potential for radiation hardness. We have previously reported the effects of electron irradiation on test cells which were not optimally designed for space. From those results we estimated that an optimally designed cell could achieve 20 percent after irradiation with 10(exp 15) cm(exp -2) 1 MeV electrons. Modeling studies predicted that slightly higher efficiencies may be achievable. Record efficiencies for EOL performance of other types of cells are significantly lower. Even the best Si and InP cells have BOL efficiencies lower than the EOL efficiency we report here. Good GaAs cells have an EOL efficiency of 16 percent. The InP/Ga(0.5)In(0.5)As two-junction, two-terminal device has a BOL efficiency as high as 22.2 percent, but radiation results for these cells were limited. In this study we use the previous modeling and irradiation results to design a set of Ga(0.5)In(0.5)P/GaAs cells that will demonstrate the importance of the design parameters and result in high-efficiency devices. We report record AMO efficiencies: a BOL efficiency of 25.7 percent for a device optimized for BOL performance and two of different designs with EOL efficiencies of 19.6 percent (at 10(exp 15) cm(exp -2) 1MeV electrons). We vary the bottom-cell base doping and the top-cell thickness to show the effects of these two important design parameters. We get an unexpected result indicating that the dopant added to the bottom-cell base also increases the degradation of the top cell.
Kurtz, Sarah R.↗
The effect of heat treatment on the resistivity of polycrystalline silicon films
The resistivity of doped polycrystalline silicon films has been studied as a function of post deposition heat treatments in an oxidizing atmosphere. It was found that a short oxidation cycle may produce a resistivity increase as large as three orders of magnitude in the polycrystalline films. The extent of change was dependent on the initial resistivity and the films' doping level and was independent of the total oxidation time.
Fripp, A. L., Jr.↗
Field Effect Transistor Behavior in Electrospun Polyaniline/Polyethylene Oxide Demonstrated
Novel transistors and logic devices based on nanotechnology concepts are under intense development. The potential for ultra-low-power circuitry makes nanotechnology attractive for applications such as digital electronics and sensors. For NASA applications, nanotechnology offers tremendous opportunities for increased onboard data processing, and thus autonomous decisionmaking ability, and novel sensors that detect and respond to environmental stimuli with little oversight requirements. Polyaniline/polyethylene oxide (PANi/PEO) nanofibers are of interest because they have electrical conductivities that can be changed from insulating to metallic by varying the doping levels and conformations of the polymer chain. At the NASA Glenn Research Center, we have observed field effect transistor (FET) behavior in electrospun PANi/PEO nanofibers doped with camphorsulfonic acid. The nanofibers were deposited onto Au electrodes, which had been prepatterned onto oxidized silicon substrates. The preceding scanning electron image shows the device used in the transistor measurements. Saturation channel currents are observed at surprisingly low source/drain voltages (see the following graph). The hole mobility in the depletion regime is 1.4x10(exp -4)sq cm/V sec, whereas the one-dimensional charge density (at zero gate bias) is calculated to be approximately 1 hole per 50 two-ring repeat units of polyaniline, consistent with the rather high channel conductivity (approx.10(exp -3) S/cm). Reducing or eliminating the PEO content in the fiber is expected to enhance device parameters. Electrospinning is thus proposed as a simple method of fabricating one-dimensional polymer FET's.
Mueller, Carl H.↗
Tailored emitter, low-resistivity, ion-implanted silicon solar cells
Open-circuit voltages as high as 0.645 V (AM0, 25 C) have been obtained by a new process developed for low-resistivity silicon. The process utilizes high-dose phosphorus implantation followed by furnace annealing and simultaneous oxide growth. The effect of the thermally grown oxide is a reduction of surface recombination velocity; the oxide also acts as a moderately efficient antireflection (AR) coating. Boron-doped, float-zone silicon with resistivities from 0.1 to 1.0 (omega)(cm) has been processed according to this sequence; results show that the highest open-circuit voltage is obtained with 0.1(omega)(cm) starting material. The effects of Auger recombination and bandgap narrowing caused by high doping concentrations in the n(+)junction region have been investigated by implanting phosphorus over a wide range of dose levels. The effects of emitter-phosphorus concentrations tailored to optimize electric fields in the emitter have also been investigated.
Minnucci, J. A.↗
Uncooled Doped-Si Thermopiles for Thermal Land Imaging Applications
Sustained and enhanced land imaging is crucial for providing high-quality science data on change in land use, forest health, environment, and climate. Future thermal land imaging instruments operating in the 10-12 micron band will provide essential information for furthering our hydrologic understanding at scales of human influence, and producing field-scale moisture information through accurate retrievals of evapotranspiration (ET). To address the need for cost-effective future thermal land imaging missions we are developing novel uncooled doped-silicon thermopile detectors, an extension of a detector design originally developed at NASA-Goddard for planetary science applications (Lakew et al. 2016). These doped-Si thermopile detectors have the potential to offer superior performance in terms of sensitivity, speed and customizability, when compared to current commercial-off-the-shelf uncooled detector technologies. Because cryocooling technology does not need to be fielded on the instrument, these and other uncooled detectors offer the benefit of greatly reduced instrument cost, mass, and power at the expense of some acceptable loss in detector sensitivity. We present an overview of our thermal imaging instrument concept, our doped-Si thermopile detector concept, and performance expectations and comparisons. We also provide an update on the current status of this detector technology development
Barrentine, Emily M.↗
Uncooled Doped-Si Thermopiles for Thermal Land Imaging Applications
Sustained and enhanced land imaging is crucial for providing high-quality science data on change in land use, forest health, environment, and climate. Future thermal land imaging instruments operating in the 10-12 micron band will provide essential information for furthering our hydrologic understanding at scales of human influence, and producing field-scale moisture information through accurate retrievals of evapotranspiration (ET). To address the need for cost-effective future thermal land imaging missions we are developing novel uncooled doped-silicon thermopile detectors, an extension of a detector design concept originally developed at NASA-Goddard for planetary science applications. These doped-Si thermopile detectors have the potential to offer superior performance in terms of sensitivity, speed, and customization, when compared to current commercial-off-the-shelf uncooled detector technologies. Because cryocooler technology does not need to be fielded on the instrument, these and other uncooled detectors offer the benefit of greatly reduced instrument cost, mass, and power at the expense of some acceptable loss in detector sensitivity. We present the motivation for an uncooled thermal imaging instrument, our doped-Si thermopile detector concept, and performance expectations and comparisons. We also provide an update on the current status of this detector technology development.
Thermopiles↗
Effects of sub-threshold high-energy electrons on the properties of silicon photovoltaic cells
Subthreshold electron irradiation effects on surface and bulk electrical properties of Li-doped and Li-free silicon photovoltaic cells
Crisman, E. E.↗
Heat flow control and segregation in directional solidification
Optimization of the vertical Bridgman technique for growth of electronic materials in single crystal form was investigated. The limitations of the crystal growth configuration were experimentally determined and heat transfer related deficiencies identified. Design of an alternate system was based on the use of heat pipes separated by a gradient region. Heat transfer analyses based on one and two dimensional models indicated the necessity of a flexible gradient zone configuration. Directional melting of binary systems as encountered during seeding in melt growth was analysed for concurrent compositional changes at the crystal-metal interface, and the theoretical treatment numerically applied to HgCdTe and Ga doped germanium. A theoretical and experimental study of the thermal effects associated with current flow was conducted. It was found that experimental measurements of dc induced growth during crystal pulling can be used for the precise determination of the Peltier coefficient.
Witt, A. F.↗
Communications and logic systems at millimeter wave frequencies
Activities in materials development, lithography, FET experiments, and mixer diode fabrication are reported. In addition, articles are presented which address leakage effects in n-GaAs MESFET's and lateral nonuniform doping in GaAs MESFET's.
Source record↗
The performance of Schottky diodes as far-infrared modulators
The performance as a THz-frequency modulator of a small-area Schottky diode mounted in a corner-cube antenna is evaluated, including the effects of carrier inertia and dielectric relaxation. Calculations are performed for a 1.4-micron diameter diode operating at a carrier frequency of 2.252 THz and a modulation frequency of 8 GHz. The phase modulation is found to completely dominate the amplitude modulation. The performance is shown to be degraded well below the plasma frequency in the undepleted epilayer due to the presence of a second resonance caused by the interaction of the barrier capacitance and the effective inductance due to carrier inertia. An increase in epilayer doping (reducing the diode radius) may improve the single-sideband conversion efficiency by about 20 dB.
Grossman, Erich N.↗
The influence of Sb doping on the growth and electronic properties of GaAs(100) and AlGaAs(100)
Isoelectronic doping using antimony has been shown to reduce traps and improve material properties during epitaxial growth of Si doped GaAs(100) and AlGaAs(100). In this study, the effect of the antimony dopant on the optimal growth temperature is examined with the aim of producing high-quality heterostructures at lower temperatues. High-quality films of GaAs and AlGaAs have been grown by molecular-beam epitaxy at the normal growth temperatures of 610 and 700 C, respectively, and 50-100 C below this temperature using varying small amounts of Sb as a dopant. Electrical properties of the films were then examined using Hall mobility measurements and deep-level transient spectroscopy.
Jamison, K. D.↗
Portable Unit for Metabolic Analysis
The Portable Unit for Metabolic Analysis (PUMA) is an instrument that measures several quantities indicative of human metabolic function. Specifically, this instrument makes time-resolved measurements of temperature, pressure, flow, and the partial pressures of oxygen and carbon dioxide in breath during both inhalation and exhalation. Portable instruments for measuring these quantities have been commercially available, but the response times of those instruments are too long to enable temporal resolution of phenomena on the time scales of human respiration cycles. In contrast, the response time of the PUMA is significantly shorter than characteristic times of human respiration phenomena, making it possible to analyze varying metabolic parameters, not only on sequential breath cycles but also at successive phases of inhalation and exhalation within the same breath cycle. In operation, the PUMA is positioned to sample breath near the subject s mouth. Commercial off-the-shelf sensors are used for three of the measurements: a miniature pressure transducer for pressure, a thermistor for temperature, and an ultrasonic sensor for flow. Sensors developed at Glenn Research Center are used for measuring the partial pressures of oxygen and carbon dioxide: The carbon dioxide sensor exploits the relatively strong absorption of infrared light by carbon dioxide. Light from an infrared source passes through the stream of inhaled or exhaled gas and is focused on an infrared- sensitive photodetector. The oxygen sensor exploits the effect of oxygen in quenching the fluorescence of ruthenium-doped organic molecules in a dye on the tip of an optical fiber. A blue laser diode is used to excite the fluorescence, and the optical fiber carries the fluorescent light to a photodiode, the temporal variation of the output of which bears a known relationship with the rate of quenching of fluorescence and, hence, with the partial pressure of oxygen. The outputs of the sensors are digitized, preprocessed by a small onboard computer, and then sent wirelessly to a desktop computer, where the collected data are analyzed and displayed. In addition to the raw data on temperature, pressure, flow, and mole fractions of oxygen and carbon dioxide, the display can include volumetric oxygen consumption, volumetric carbon dioxide production, respiratory equivalent ratio, and volumetric flow rate of exhaled gas.
Dietrich, Daniel L.↗
Long-wavelength PtSi infrared detectors fabricated by incorporating a p(+) doping spike grown by molecular beam epitaxy
By incorporating a 1-nm-thick p(+) doping spike at the PtSi/Si interface, we have successfully demonstrated extended cutoff wavelengths of PtSi Schottky infrared detectors in the long wavelength infrared (LWIR) regime for the first time. The extended cutoff wavelengths resulted from the combined effects of an increased electric field near the silicide/Si interface due to the p(+) doping spike and the Schottky image force. The p(+) doping spikes were grown by molecular beam epitaxy at 450 C, using elemental boron as the dopant source, with doping concentrations ranging from 5 x 10 exp 19 to 2 x 10 exp 20/cu cm. Transmission electron microscopy indicated good crystalline quality of the doping spikes. The cutoff wavelengths were shown to increase with increasing doping concentrations of the p(+) spikes. Thermionic emission dark current characteristics were observed and photoresponses in the LWIR regime were demonstrated.
Lin, T. L.↗