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At least 235 records · Page 13

Nanostructure Engineered Chemical Sensors for Hazardous Gas and Vapor Detection

A nanosensor technology has been developed using nanostructures, such as single walled carbon nanotubes (SWNTs) and metal oxides nanowires or nanobelts, on a pair of interdigitated electrodes (IDE) processed with a silicon based microfabrication and micromachining technique. The IDE fingers were fabricated using thin film metallization techniques. Both in-situ growth of nanostructure materials and casting of the nanostructure dispersions were used to make chemical sensing devices. These sensors have been exposed to hazardous gases and vapors, such as acetone, benzene, chlorine, and ammonia in the concentration range of ppm to ppb at room temperature. The electronic molecular sensing in our sensor platform can be understood by electron modulation between the nanostructure engineered device and gas molecules. As a result of the electron modulation, the conductance of nanodevice will change. Due to the large surface area, low surface energy barrier and high thermal and mechanical stability, nanostructured chemical sensors potentially can offer higher sensitivity, lower power consumption and better robustness than the state-of-the-art systems, which make them more attractive for defense and space applications. Combined with MEMS technology, light weight and compact size sensors can be made in wafer scale with low cost.

Li, Jing↗

Special Component Designs for Differential-Amplifier MMICs

Special designs of two types of electronic components transistors and transmission lines have been conceived to optimize the performances of these components as parts of waveguide-embedded differential-amplifier monolithic microwave integrated circuits (MMICs) of the type described in the immediately preceding article. These designs address the following two issues, the combination of which is unique to these particular MMICs: Each MMIC includes a differential double-strip transmission line that typically has an impedance between 60 and 100 W. However, for purposes of matching of impedances, transmission lines having lower impedances are also needed. The transistors in each MMIC are, more specifically, one or more pair(s) of InP-based high-electron-mobility transistors (HEMTs). Heretofore, it has been common practice to fabricate each such pair as a single device configured in the side-to-side electrode sequence source/gate/drain/gate/source. This configuration enables low-inductance source grounding from the sides of the device. However, this configuration is not suitable for differential operation, in which it is necessary to drive the gates differentially and to feed the output from the drain electrodes differentially. The special transmission-line design provides for three conductors, instead of two, in places where lower impedance is needed. The third conductor is a metal strip placed underneath the differential double-strip transmission line. The third conductor increases the capacitance per unit length of the transmission line by such an amount as to reduce the impedance to between 5 and 15 W. In the special HEMT-pair design, the side-to-side electrode sequence is changed to drain/gate/source/gate/ drain. In addition, the size of the source is reduced significantly, relative to corresponding sizes in prior designs. This reduction is justified by the fact that, by virtue of the differential configuration, the device has an internal virtual ground, and therefore there is no need for a low-resistance contact between the source and the radio-frequency circuitry. The source contact is needed only for DC biasing. These designs were implemented in a single-stage-amplifier MMIC. In a test at a frequency of 305 GHz, the amplifier embedded in a waveguide exhibited a gain of 0 dB; after correcting for the loss in the waveguide, the amplifier was found to afford a gain of 0.9 dB. In a test at 220 GHz, the overall gain of the amplifier- and-waveguide assembly was found to be 3.5 dB.

Kangaslahti, Pekka↗

A Symmetrical, Planar SOFC Design for NASA's High Specific Power Density Requirements

Solid oxide fuel cell (SOFC) systems for aircraft applications require an order of magnitude increase in specific power density (1.0 kW/kg) and long life. While significant research is underway to develop anode supported cells which operate at temperatures in the range of 650-800 C, concerns about Cr-contamination from the metal interconnect may drive the operating temperature down further, to 750 C and lower. Higher temperatures, 900-1000 C, are more favorable for SOFC stacks to achieve specific power densities of 1.0 kW/kg. Since metal interconnects are not practical at these high temperatures and can account for up to 75% of the weight of the stack, NASA is pursuing a design that uses a thin, LaCrO3-based ceramic interconnect that incorporates gas channels into the electrodes. The bi-electrode supported cell (BSC) uses porous YSZ scaffolds, on either side of a 10-20 microns electrolyte. The porous support regions are fabricated with graded porosity using the freeze-tape casting process which can be tailored for fuel and air flow. Removing gas channels from the interconnect simplifies the stack design and allows the ceramic interconnect to be kept thin, on the order of 50 -100 microns. The YSZ electrode scaffolds are infiltrated with active electrode materials following the high temperature sintering step. The NASA-BSC is symmetrical and CTE matched, providing balanced stresses and favorable mechanical properties for vibration and thermal cycling.

Cable, Thomas L.↗

Fabrication and life testing of thermionic converters

An unfueled converter containing a chloride-fluoride duplex tungsten emitter of 4.78 eV vacuum work function was tested for 46,647 hours at an emitter temperature of 1973 K and an electrode power output of about 8 watts/sq cm. The test demonstrated the superior and stable performance of the (110) oriented tungsten emitter at high temperatures. Three 90 UC-10 ZrC(C/U = 1.04, tungsten additive = 4 wt %) fueled converters were fabricated and tested at an emitter temperature of 1873 K. Converter containing chloride-arc-cast duplex tungsten cladding showed temperature thermionic performance and slower rate of performance drop than converter containing chloride-fluoride duplex tungsten cladding. This is believed to be due to the superior fuel component diffusion resistance of the arc-cast tungsten substrate used in the fuel cladding. It was shown that a converter containing a carbide fueled chloride-arc-cast duplex tungsten emitter with an initial electrode power output of 6.80 watts/sq cm could still deliver an electrode power output of 6.16 watts/sq cm after 18,632 hours of operation at an emitter temperature of 1873 K.

Yang, L.↗

Wire electric-discharge machining and other fabrication techniques

Wire electric discharge machining and extrude honing were used to fabricate a two dimensional wing for cryogenic wind tunnel testing. Electric-discharge cutting is done with a moving wire electrode. The cut track is controlled by means of a punched-tape program and the cutting feed is regulated according to the progress of the work. Electric-discharge machining involves no contact with the work piece, and no mechanical force is exerted. Extrude hone is a process for honing finish-machined surfaces by the extrusion of an abrasive material (silly putty), which is forced through a restrictive fixture. The fabrication steps are described and production times are given.

Morgan, W. H.↗

An investigation for the development of an integrated optical data preprocessor

A laboratory model of a 16 channel integrated optical data preprocessor was fabricated and tested in response to a need for a device to evaluate the outputs of a set of remote sensors. It does this by accepting the outputs of these sensors, in parallel, as the components of a multidimensional vector descriptive of the data and comparing this vector to one or more reference vectors which are used to classify the data set. The comparison is performed by taking the difference between the signal and reference vectors. The preprocessor is wholly integrated upon the surface of a LiNbO3 single crystal with the exceptions of the source and the detector. He-Ne laser light is coupled in and out of the waveguide by prism couplers. The integrated optical circuit consists of a titanium infused waveguide pattern, electrode structures and grating beam splitters. The waveguide and electrode patterns, by virtue of their complexity, make the vector subtraction device the most complex integrated optical structure fabricated to date.

Verber, C. M.↗

Energy-conversion research and development with diminiodes

Diminiodes are variable-gap cesium diodes with plane emitters and guarded collectors a few millimeters in diameter. This miniaturization allows the electrodes to be made of little pieces of rare materials like single crystals of unusual metals or metallides. In addition to smallness, diminiode advantages include simplicity, precision, fabrication ease, parts interchangeability, cleanliness, full instrumentation, ruggedness, and economy. The diminiode design also stresses effective, economical use with computers that control, collect, and correlate thermionic current and voltage data. Such diminiode tests completed recently for ultrapure metal electrodes produced relatively low, sharply defined ultimate power outputs.

Morris, J. F.↗

Bias Selectable Dual Band AlGaN Ultra-violet Detectors

Bias selectable dual band AlGaN ultra-violet (UV) detectors, which can separate UV-A and UV-B using one detector in the same pixel by bias switching, have been designed, fabricated and characterized. A two-terminal n-p-n photo-transistor-like structure was used. When a forward bias is applied between the top electrode and the bottom electrode, the detectors can successfully detect W-A and reject UV-B. Under reverse bias, they can detect UV-B and reject UV-A. The proof of concept design shows that it is feasible to fabricate high performance dual-band UV detectors based on the current AlGaN material growth and fabrication technologies.

Yan, Feng↗

The charge injection device /CID/ as a stellar tracking sensor

A 128 x 128 element CID imager was operated in a simulated stellar trackling environment and evaluated for temporal and pattern noise and spectral response over a temperature range of -40 C to +25 C. The test devices were fabricated on long-lifetime bulk silicon material and utilized very thin upper-level polysilicon electrodes for enhanced spectral response. A standard microcomputer was used to generate all control signals and to collect and process performance data. The results of this program were used to predict the performance of a 400 x 400 CID array designed specifically for stellar-tracking.

Burke, H. K.↗

Issues on the production and electrochemical separation of oxygen from carbon dioxide

There is considerable interest in in-situ propellant manufacturing on the moon and Mars. One of the concepts of oxygen production that is being actively pursued is the processing of atmospheric carbon dioxide on Mars to produce oxygen by means of thermal decomposition and electrochemical separation. The key component of such a production facility is the electrochemical separation cell that filters out the oxygen from the gas mixture of carbon dioxide, carbon monoxide, and oxygen. Efficient design of the separation cell and the selection of electrolyte and electrode materials of superior performance for the cell would translate to significant reduction in the power requirement and the mass of the production facility. The objective is to develop the technology required to produce the cells in-house and test various electrolyte and electrode materials systematically until the optimal combination is found. An effective technique was developed for the fabrication of disk shaped cells. Zirconia and Ceria cells were made in-house. Complete modules of the electrochemical cell and housings were designed, fabricated, and tested.

Kaloupis, P.↗

Microshutter Arrays for James Webb Space Telescope

Two-dimensional MEMS microshutter arrays are being developed at NASA Goddard Space Flight Center for use in the near-infrared region on the James Webb Space Telescope (JWST). The microshutter arrays are designed for the selective transmission of light with high efficiency and high contrast. The JWST environment requires cryogenic operation at 35K. Microshutter arrays are fabricated out of silicon-oxide-insulated (SOI) silicon wafers. Arrays are close-packed silicon nitride membranes with a pixel size of 100x200 p. Individual shutters are patterned with a torsion flexure permitting shutters to open 90 degrees with a minimized mechanical stress concentration. The mechanical shutter arrays are fabricated using MEMS technologies. The processing includes a multi- layer metal deposition and patterning of shutter electrodes and magnetic pads, reactive ion etching (NE) of the front side to form shutters out of the nitride membrane, an anisotropic back-etch for wafer thinning, followed by a deep RIE (DRIE) back-etch down to the nitride shutter membrane to form W e s and relieve shutters from the silicon substrate. An additional metal deposition and patterning is used to form back electrodes. Shutters are actuated using a magnetic force and latched using an electrostatic force. . . . KEYWORDS: microshutter, MEMS, RIE, DRIE, micro-optics, near inbred, space telescope

Li, Mary J.↗

High Sensitivity, Low Power Nano Sensors and Devices for Chemical Sensing

The chemical sensor market has been projected to grow to better than $40 billion dollars worldwide within the next 10 years. Some of the primary motivations to develop nanostructured chemical sensors are monitoring and control of environmental pollution; improved diagnostics for consumption; improvement in measurement precision and accuracy; and improved detection limits for Homeland security, battlefield environments, and process and quality control of industrial applications. In each of these applications, there is demand for sensitivity, selectivity and stability of environmental and biohazard detection and capture beyond what is currently commercially available. Nanotechnology offers the ability to work at the molecular level, atom by atom, to create large structures with fundamentally new molecular organization. It is essentially concerned with materials, devices, and systems whose structures and components exhibit novel and significantly improved physical, chemical and biological properties, phenomena, and process control due to their nanoscale size. One such nanotechnology-enabled chemical sensor has been developed at NASA Ames leveraging nanostructures, such as single walled carbon nanotubes (SWNTs) and metal oxide nanobelts or nanowires, as a sensing medium bridging a pair of interdigitated electrodes (IDE) realized through a silicon-based microfabrication and micromachining technique. The DE fingers are fabricated on a silicon substrate using standard photolithography and thin film metallization techniques. It is noteworthy that the fabrication techniques employed are not confined to the silicon substrate. Through spin casting and careful substrate selection (i.e. clothing, glass, polymer, etc.), additional degrees of freedom can be exploited to enhance sensitivity or to conform to unique applications. Both in-situ growth of nanostructured materials and casting of nanostructured dispersions were used to produce analogous chemical sensing devices.

Li, Jing↗

A Novel, Free-Space Optical Interconnect Employing Vertical-Cavity Surface Emitting Laser Diodes and InGaAs Metal-Semiconductor-Metal Photodetectors for Gbit/s RF/Microwave Systems

Emerging technologies and continuing progress in vertical-cavity surface emitting laser (VCSEL) diode and metal-semiconductor-metal (MSM) photodetector research are making way for novel, high-speed forms of optical data transfer in communication systems. VCSEL diodes operating at 1550 nm have only recently become commercially available, while MSM photodetectors are pushing the limits of contact lithography with interdigitated electrode widths reaching sub micron levels. We propose a novel, free-space optical interconnect operating at about 1Gbit/s utilizing VCSEL diodes and MSM photodetectors. We report on development, progress, and current work, which are as follows: first, analysis of the divergent behavior of VCSEL diodes for coupling to MSM photodetectors with a 50 by 50 m active area and second, the normalized frequency response of the VCSEL diode as a function of the modulating frequency. Third, the calculated response of MSM photodetectors with varying electrode width and spacing on the order of 1 to 3 m as well as the fabrication and characterization of these devices. The work presented here will lead to the formation and characterization of a fully integrated 1Gbit/s free-space optical interconnect at 1550 nm and demonstrates both chip level and board level functionality for RF/microwave digital systems.

Savich, Gregory R.↗

Dual Band Deep Ultraviolet AlGaN Photodetectors

We report on the design, fabrication and characterization of a back-illuminated voltage bias selectable dual-band AlGaN UV photodetector. The photodetector can separate UVA and W-B band radiation by bias switching a two terminal n-p-n homojunction structure that is fabricated in the same pixel. When a forward bias is applied between the top and bottom electrodes, the detector can sense UV-A and reject W-B band radiation. Alternatively, under reverse bias, the photodetector can sense UV-B and reject UV-A band radiation.

Aslam, S.↗

Carbon Nanotube Based Chemical Sensors for Space and Terrestrial Applications

A nanosensor technology has been developed using nanostructures, such as single walled carbon nanotubes (SWNTs), on a pair of interdigitated electrodes (IDE) processed with a silicon-based microfabrication and micromachining technique. The IDE fingers were fabricated using photolithography and thin film metallization techniques. Both in-situ growth of nanostructure materials and casting of the nanostructure dispersions were used to make chemical sensing devices. These sensors have been exposed to nitrogen dioxide, acetone, benzene, nitrotoluene, chlorine, and ammonia in the concentration range of ppm to ppb at room temperature. The electronic molecular sensing of carbon nanotubes in our sensor platform can be understood by intra- and inter-tube electron modulation in terms of charge transfer mechanisms. As a result of the charge transfer, the conductance of p-type or hole-richer SWNTs in air will change. Due to the large surface area, low surface energy barrier and high thermal and mechanical stability, nanostructured chemical sensors potentially can offer higher sensitivity, lower power consumption and better robustness than the state-of-the-art systems, which make them more attractive for defense and space applications. Combined with MEMS technology, light weight and compact size sensors can be made in wafer scale with low cost. Additionally, a wireless capability of such a sensor chip can be used for networked mobile and fixed-site detection and warning systems for military bases, facilities and battlefield areas.

Li, Jing↗

A novel electron tunneling infrared detector

The pneumatic infrared detector, originally developed by Golay in the late 1940s, uses the thermal expansion of one cm(exp 3) of xenon at room temperature to detect the heat deposited by infrared radiation. This detector was limited by thermal fluctuations within a 10 Hz bandwidth, but suffered from long thermal time constants and a fragile structure. Nevertheless, it represents the most sensitive room temperature detector currently available in the long wavelength infrared (LWIR). Fabrication of this type of detector on smaller scales has been limited by the lack of a suitably sensitive transducer. Researchers designed a detector based on this principle, but which is constructed entirely from micromachined silicon, and uses a vacuum tunneling transducer to detect the expansion of the trapped gas. Because this detector is fabricated using micromachining techniques, miniaturization and integration into one and two-dimensional arrays is feasible. The extreme sensitivity of vacuum tunneling to changes in electrode separation will allow a prototype of this detector to operate in the limit of thermal fluctuations over a 10 kHz bandwidth. A calculation of the predicted response and noise of the prototype is presented with the general formalism of thermal detectors. At present, most of the components of the prototype have been fabricated and tested independently. In particular, a characterization of the micromachined electron tunneling transducer has been carried out. The measured noise in the tunnel current is within a decade of the limit imposed by shot noise, and well below the requirements for the operation of an infrared detector with the predicted sensitivity. Assembly and characterization of the prototype infrared detector will be carried out promptly.

Kenny, T. W.↗

Si/IrSi3 Schottky-Barrier Infrared Detectors

Si/IrSi or Si/IrSi3 Schottky-barrier detector fabricated by stoichiometric codeposition of Ir and Si on p Si substrate. Includes p+ substrate contact, silicide electrode, and n Si guard ring, which suppresses leakage around periphery of silicide electrode. Part of continuing effort to develop imaging arrays of Schottky-barrier detectors operating at far-infrared wavelengths.

Lin, True-Lon↗