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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Inherent stochasticity during insulator–metal transition in VO 2

Vanadium dioxide (VO 2 ), which exhibits a near-room-temperature insulator–metal transition, has great potential in applications of neuromorphic computing devices. Although its volatile switching property, which could emulate neuron spiking, has been studied widely, nanoscale studies of the structural stochasticity across the phase transition are still lacking. In this study, using in situ transmission electron microscopy and ex situ resistive switching measurement, we successfully characterized the structural phase transition between monoclinic and rutile VO 2 at local areas in planar VO 2 /TiO 2 device configuration under external biasing. After each resistive switching, different VO 2 monoclinic crystal orientations are observed, forming different equilibrium states. We have evaluated a statistical cycle-to-cycle variation, demonstrated a stochastic nature of the volatile resistive switching, and presented an approach to study in-plane structural anisotropy. Furthermore, our microscopic studies move a big step forward toward understanding the volatile switching mechanisms and the related applications of VO 2 as the key material of neuromorphic computing.

36 MATERIALS SCIENCE↗
NASA NTRS1966

Split glass tube assures quality in electron beam brazing

Sealed enclosure of heat-resistant glass tubing and silicone rubber molds provide good visibility for electron beam brazing of metal tubes in an inert gas atmosphere. The glass tubing and rubber molds, which are bonded together, are easily applied to and removed from the brazing area by operation of a clamp.

Kressin, W. J.↗
DOE OSTI2020

Competition between magnetic order and charge localization in Na 2 IrO 3 thin crystal devices thin crystal devices

Spin orbit assisted Mott insulators such as sodium iridate (Na 2 IrO 3 ) have been an important subject of study in recent years. In these materials, the interplay of electronic correlations, spin-orbit coupling, crystal field effects, and a honeycomb arrangement of ions bring exciting ground states, predicted in the frame of the Kitaev model. The insulating character of Na 2 IrO 3 has hampered its integration to an electronic device, desirable for applications, such as the manipulation of quasiparticles interesting for topological quantum computing. Here we show through electronic transport measurements supported by angle-resolved photoemission spectroscopy (ARPES) experiments, that electronic transport in Na 2 IrO 3 is ruled by variable range hopping and it is strongly dependent on the magnetic ordering transition known for bulk Na 2 IrO 3 , as well as on external electric fields. Furthermore, electronic transport measurements allow us to deduce a value for the localization length and the density of states in our Na 2 IrO 3 thin crystal devices, and offer an alternative approach to study insulating 2D-materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Designed metal-insulator transition in low-symmetry magnetic intermetallics

Compounds exhibiting half-metallic character and metal-insulator transitions draw considerable attention in condensed-matter and materials physics due to their potential use in spintronics. Here we show that specific electron doping plays a crucial role in tailoring thermodynamic, structural, electronic, and magnetic properties of materials derived from low-symmetry magnetic intermetallics, exemplified on triclinic Mn 4 Al 11 . Upon chemical doping of Al by Ge, we predict improved phase stability and adherence to a generalized “18-n rule” governing closed-shell configurations in intermetallic with narrow bandgaps. Validating experiments include measurements of phase stability and electronic transport properties of electron-doped Mn 4 Al 10 Ge that crystallizes in the Mn 4 Al 11 -type structure, confirming the bandgap opening as predicted by chemical analysis and density-functional theory. Here we also demonstrate theoretically that hydrostatic pressure enhances the predicted half-metallic gap in the up-spin channel, which leads to a ferrimagnetic-to-ferromagnetic transition driven by Mn-Mn charge ordering in the Mn 4 Al 11 parent. We have also discussed the generality of our approach in predicting the design of other classes of intermetallics including half and full Heusler compounds.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2009

NASA TEERM Hexavalent Chrome Alternatives Projects

This slide presentation reviews the NASA/DOD projects to select an alternative to hexavalent chrome in the aerospace industry. The Phase I process of the project performed: (1) Evaluation and testing of non-chromated coating systems as replacements for hexavalent chrome coatings in aircraft and aerospace applications. (2) Testing of coating systems to DoD and NASA specifications for corrosion resistance and adhesion. (3) Bare corrosion resistance and atmospheric exposure will be focus areas of Phase II Testing. The description includes a chart that summarizes the 3000 hour salt fog test results. The second phase of the project includes (1) Evaluation and testing of coating systems that do not contain hexavalent chrome as replacements for aerospace applications. (2) Evaluation of coatings at Beach Test Site and Launch Complex 39B (3) Evaluation of non-chrome coatings for electronic housings (bare corrosion resistance and electrical impedance) is a part of this round of testing. This project was performed for the Technology Evaluation for Environmental Risk Mitigation (TEERM)

Rothgeb, Matt↗
DOE OSTI2026

Superlattice reflection signatures of the insulator–metal transition in V 3 O 5 thin films

Nanoelectronic systems that are inspired by the brain are increasingly looking to insulator–metal transition (IMT) materials as they can mimic the response characteristics of neurons to temperature changes so that these can be used in robotic and computational applications. V 3 O 5 has an insulator–metal transition at ∼430 or ∼80 K higher than VO 2 and provides a unique high-temperature opportunity for these types of applications. Here, in this work, we track the structural evolution of V 3 O 5 thin films across the IMT through conventional selected-area electron diffraction (SAED) and four-dimensional scanning TEM (4D-STEM), correlated with temperature-dependent resistance measurements. SAED patterns show reversible evidence of superlattice reflections associated with the IMT—present below T IMT and absent above it—consistent with the accompanying drop in resistance. At room temperature, nanobeam electron diffraction patterns further reveal three local configurations: (i) type I regions with clean patterns lacking superlattice reflections and spot splitting; (ii) type II regions exhibiting rows of superlattice reflections and split spots indicative of crystallographic variants; and (iii) type III regions with negligible superlattice reflections but larger spot splitting suggestive of overlapping domains of insulating and conducting phases likely driven by local lattice distortions. Upon heating, the superlattice reflections disappear between 413 and 453 K, concurrent with the resistance drop at T IMT , consistent with the emergence of a conducting phase. The overall diffraction geometry remains essentially unchanged up to 573 K, implying that relative domain orientations persist through the transition. These observations reveal nanoscale structural heterogeneity in V 3 O 5 thin films across the IMT and inform operation in regimes where mixed-phase textures are expected. A plausible indexing framework rationalizing the observed geometries is presented in the Discussion section, alongside its limitations and alternative interpretations.

25 ENERGY STORAGE↗
DOE OSTI2021

Effect of natural mutations of SARS-CoV-2 on spike structure, conformation, and antigenicity

Severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) variants with multiple spike mutations enable increased transmission and antibody resistance. We combined cryo–electron microscopy (cryo-EM), binding, and computational analyses to study variant spikes, including one that was involved in transmission between minks and humans, and others that originated and spread in human populations. All variants showed increased angiotensin-converting enzyme 2 (ACE2) receptor binding and increased propensity for receptor binding domain (RBD)–up states. While adaptation to mink resulted in spike destabilization, the B.1.1.7 (UK) spike balanced stabilizing and destabilizing mutations. A local destabilizing effect of the RBD E484K mutation was implicated in resistance of the B.1.1.28/P.1 (Brazil) and B.1.351 (South Africa) variants to neutralizing antibodies. Our studies revealed allosteric effects of mutations and mechanistic differences that drive either interspecies transmission or escape from antibody neutralization.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2020

Quantifying Dynamic On-State Resistance of GaN HEMTs for Power Converter Design via a Survey of Low and High Voltage Devices

Designing and optimizing high switching frequency, ultra-efficient converters requires detailed knowledge of the behavior and parasitic parameters for both active and passive components. Recently, wide bandgap transistors have enabled simultaneous increases in both switching frequency and efficiency due to higher maximum operating junction temperature limits, lower dc on-state resistances, and reduced parasitic inductances and capacitances. Yet, the early acceptance of gallium-nitride (GaN) switches was plagued by detrimental dynamic on-state resistance effects. This complex phenomenon for GaN devices is characterized by deviations in on-state resistance from dc operating characteristics based on design choices such as the magnitude and duration of both voltage and current stress, switching mode, and junction temperature. While device manufacturers have made improvements compared to early generation devices, experimental evidence from a survey of commercial GaN transistors highlight measurable change in on-state resistance still exists due to variations in voltage stress during hard-switching operation. After sharing insights for obtaining low noise measurements, an analysis method along with two metrics are proposed to characterize dynamic on-state resistance measurements for power electronics designers. Furthermore, quantifying the performance of GaN devices with standardized metrics facilitates a fair comparison between different GaN device technologies during converter development, enables manufacturing qualification for GaN switches, and provides a benchmark to catalyze improvement for the next generation of GaN device development.

14 SOLAR ENERGY↗
DOE OSTI2024

Thermal simulation of the EIC HSR interconnect module - RF fingers

The Electron Ion Collider (EIC) Hadron Storage Ring (HSR) will reuse most of the existing superconducting magnets from the RHIC storage ring. However, the existing beam vacuum chamber and stripline BPMs will not be compatible with the planned EIC hadron bunches that will have a 3x higher intensity and be 10x shorter, and some operational scenarios with large radial offsets of the beam in the vacuum chamber. To address these challenges, a copper coated beam screen will be implemented, the existing RHIC stripline BPMs will be shielded and an interconnect module design, including new BPM will be installed adjacent to the existing BPMs. A thermal analysis of the new arc BPM interconnect housing has been conducted to assess the heating caused by beam induced resistive wall heating and electron cloud heating. An analysis of the BPM module has been made and reported separately. This report will focus on the other side of the interconnect module, containing the RF fingers.

43 PARTICLE ACCELERATORS↗
DOE OSTI2024

Enhanced electronic sensors

A micro-structured device that can improve sensitivity and signal-to-noise for electronic sensor materials is embedded in electrically resistive materials. The technology includes a three-dimensional embedded electrode structure and fabrication methods for making the device for electronic sensing in bulk resistive materials. Embedded electrode structures address issues in conventional sensors by allowing independent control of sensitive material thickness, area, electric field intensity, and field direction.

Doty, Fred Patrick↗
NASA NTRS1971

Dependence of defect introduction on temperature and resistivity and some long-term annealing effects

The effort reported here represents data of lithium properties in bulk-silicon samples before and after irradiation for analytical information required to characterize the interactions of lithium with radiation-induced defects in silicon. A model of the damage and recovery mechanisms in irradiated-lithium-containing solar cells is developed based on making measurements of the Hall coefficient and resistivity of samples irradiated by 1-MeV electrons. Experiments on bulk samples included Hall coefficient and resistivity measurements taken as a function of: (1) bombardment temperature, (2) resistivity, (3) fluence, (4) oxygen concentration, and (5) annealing time at temperatures from 300 to 373 K.

Brucker, G. J.↗
NASA NTRS2006

Polyimides From a-BPDA and Aromatic Diamines

Polymers having low color and a favorable combination of other properties, including high glass-transition temperature (Tg) and high mechanical properties (strength, tensile modulus, and toughness) will find use in a variety of terrestrial and space applications. Some of the space applications will be in thin films used as membranes on antennas, solar concentrators, coatings on second-surface mirrors, solar sails, sunshades, thermal and optical coatings, and multi-layer thermal insulation blankets. Depending upon the application, the film will be required to exhibit a unique combination of such properties as resistance to degradation by ultraviolet light, visible light, and electrons; low color and/or low solar absorptivity; resistance to tearing and/or wrinkling during packaging and deployment; and high mechanical properties (e.g. high strength, stiffness, and toughness).

Hergenrother, Paul M.↗
DOE OSTI2025

A Printed Microscopic Universal Gradient Interface for Super Stretchable Strain‐Insensitive Bioelectronics

Abstract Stretchable electronics capable of conforming to nonplanar and dynamic human body surfaces are central for creating implantable and on‐skin devices for high‐fidelity monitoring of diverse physiological signals. While various strategies have been developed to produce stretchable devices, the signals collected from such devices are often highly sensitive to local strain, resulting in inevitable convolution with surface strain‐induced motion artifacts that are difficult to distinguish from intrinsic physiological signals. Here all‐printed super stretchable strain‐insensitive bioelectronics using a unique universal gradient interface (UGI) are reported to bridge the gap between soft biomaterials and stiff electronic materials. Leveraging a versatile aerosol‐based multi‐materials printing technique that allows precise spatial control over the local stiffnesses with submicron resolution, the UGI enables strain‐insensitive electronic devices with negligible resistivity changes under a 180% uniaxial stretch ratio. Various stretchable devices are directly printed on the UGI for on‐skin health monitoring with high signal quality and near‐perfect immunity to motion artifacts, including semiconductor‐based photodetectors for sensing blood oxygen saturation levels and metal‐based temperature sensors. The concept in this work will significantly simplify the fabrication and accelerate the development of a broad range of wearable and implantable bioelectronics for real‐time health monitoring and personalized therapeutics.

Song, Kaidong [Department of Aerospace and Mechani↗
DOE OSTI2022

Stabilization of Ultrasmall Platinum Nanoparticles by Nitrogen-Doped Carbon: Implications for Catalysis and Electrocatalysis

Heterogeneous materials comprising platinum nanoparticles on carbon supports have numerous applications including fuel cell electrodes and heterogeneous catalysts. The effective application of these materials for fuel cells and catalysis will be greatly advanced by the ability to control the oxidation and sintering of the nanoparticles by modifications of the carbon support. One attempt of such control has been doping carbon supports with nitrogen. Here, in this work, a cutting-edge, high-sensitivity, in situ XRD instrument, which allows observation of ultrasmall Pt nanoparticles, has been combined with in situ XPS to provide unprecedented clarity in the characterization of supported Pt nanoparticles in oxidizing and high-temperature environments. On a nitrogen-doped carbon support derived from poly-phenylporphyrin, Pt nanoparticles show increased stability to oxidation and thermal sintering. The enhanced Pt–support interaction arising from the N dopant versus the N-free carbon is manifested by (1) decreased initial Pt particle sizes, (2) small particle size at higher surface densities, (3) increased resistance of Pt nanoparticles to oxidation, (4) increased electron binding energy of Pt0, and (5) increased resistance of Pt nanoparticles to sintering. It is expected that the higher stability of Pt on NC will be manifested in higher activity in fuel cells and high-temperature catalytic reactions.

catalytic reactions↗
DOE OSTI2021

Resonance from antiferromagnetic spin fluctuations for superconductivity in UTe 2

We report superconductivity originates from the formation of bound (Cooper) pairs of electrons that can move through the lattice without resistance below the superconducting transition temperature $T_c$. Electron Cooper pairs in most superconductors form anti-parallel spin singlets with total spin S = 0, although they can also form parallel spin-triplet Cooper pairs with S = 1 and an odd parity wavefunction. Spin-triplet pairing is important because it can host topological states and Majorana fermions relevant for quantum computation. Because spin-triplet pairing is usually mediated by ferromagnetic (FM) spin fluctuations3, uranium-based materials near an FM instability are considered to be ideal candidates for realizing spin-triplet superconductivity. Indeed, UTe 2 , which has a $T_c$ ≈ 1.6 K, has been identified as a candidate for a chiral spin-triplet topological superconductor near an FM instability, although it also has antiferromagnetic (AF) spin fluctuations. Here we use inelastic neutron scattering (INS) to show that superconductivity in UTe 2 is coupled to a sharp magnetic excitation, termed resonance, at the Brillouin zone boundary near AF order. Because the resonance has only been found in spin-singlet unconventional superconductors near an AF instability, its observation in UTe 2 suggests that AF spin fluctuations may also induce spin-triplet pairing or that electron pairing in UTe 2 has a spin-singlet component.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Extended quantum anomalous Hall states in graphene/hBN moiré superlattices

Electrons in topological flat bands can form new topological states driven by correlation effects. The pentalayer rhombohedral graphene/hexagonal boron nitride (hBN) moiré superlattice was shown to host fractional quantum anomalous Hall effect (FQAHE) at approximately 400 mK, triggering discussions around the underlying mechanism and role of moiré effects. In particular, new electron crystal states with non-trivial topology have been proposed. Here, in this paper, we report electrical transport measurements in rhombohedral pentalayer and tetralayer graphene/hBN moiré superlattices at electronic temperatures down to below 40 mK. We observed two more fractional quantum anomalous Hall (FQAH) states and smaller R xx values in pentalayer devices than those previously reported. In the new tetralayer device, we observed FQAHE at moiré filling factors v = 3/5 and 2/3. With a small current at the base temperature, we observed a new extended quantum anomalous Hall (EQAH) state and magnetic hysteresis, where R xy = h/e 2 and vanishing R xx spans a wide range of v from 0.5 to 1.3. At increased temperature or current, EQAH states disappear and partially transition into the FQAH liquid. Furthermore, we observed displacement field-induced quantum phase transitions from the EQAH states to the Fermi liquid, FQAH liquid and the likely composite Fermi liquid. Our observations established a new topological phase of electrons with quantized Hall resistance at zero magnetic field and enriched the emergent quantum phenomena in materials with topological flat bands.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Atomic structure of an FeCrMoCBY metallic glass revealed by high energy x-ray diffraction

Amorphous bulk metallic glasses with the composition Fe 48 Cr 15 Mo 14 C 15 B 6 Y 2 have been of interest due to their special mechanical and electronic properties, including corrosion resistance, high yield-strength, large elasticity, catalytic performance, and soft ferromagnetism. Here, we apply a reverse Monte Carlo technique to unravel the atomic structure of these glasses. The pair-distribution functions for various atomic pairs are computed based on the high-energy x-ray diffraction data we have taken from an amorphous sample. Monte Carlo cycles are used to move the atomic positions until the model reproduces the experimental pair-distribution function. The resulting fitted model is consistent with our ab initio simulations of the metallic glass. Our study contributes to the understanding of functional properties of Fe-based bulk metallic glasses driven by disorder effects.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗