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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

Solar cells and modules from dentritic web silicon

Some of the noteworthy features of the processes developed in the fabrication of solar cell modules are the handling of long lengths of web, the use of cost effective dip coating of photoresist and antireflection coatings, selective electroplating of the grid pattern and ultrasonic bonding of the cell interconnect. Data on the cells is obtained by means of dark I-V analysis and deep level transient spectroscopy. A histogram of over 100 dentritic web solar cells fabricated in a number of runs using different web crystals shows an average efficiency of over 13%, with some efficiencies running above 15%. Lower cell efficiency is generally associated with low minority carrier time due to recombination centers sometimes present in the bulk silicon. A cost analysis of the process sequence using a 25 MW production line indicates a selling price of $0.75/peak watt in 1986. It is concluded that the efficiency of dentritic web cells approaches that of float zone silicon cells, reduced somewhat by the lower bulk lifetime of the former.

Campbell, R. B.↗
NASA NTRS1981

Processing of silicon solar cells by ion implantation and laser annealing

Methods to improve the radiation tolerance of silicon cells for spacecraft use are described. The major emphasis of the program was to reduce the process-induced carbon and oxygen impurities in the junction and base regions of the solar cell, and to measure the effect of reduced impurity levels on the radiation tolerance of cells. Substrates of 0.1, 1.0 and 10.0 ohm-cm float-zone material were used as starting material in the process sequence. High-dose, low-energy ion implantation was used to form the junction in n+p structures. Implant annealing was performed by conventional furnace techniques and by pulsed laser and pulsed electron beam annealing. Cells were tested for radiation tolerance at Spire and NASA-LeRC. After irradiation by 1 MeV electrons to a fluence of 10 to the 16th power per sq cm, the cells tested at Spire showed no significant process induced variations in radiation tolerance. However, for cells tested at Lewis to a fluence of 10 to the 15th power per sq cm, ion-implanted cells annealed in vacuum by pulsed electron beam consistently showed the best radiation tolerance for all cell resistivities.

Minnucci, J. A.↗
NASA NTRS1981

Power requirements for space crystal growth

The need for power to grow silicon of a size suitable to make into devices is addressed. The expected results are tied to available power. The projection of the size of float zone crystals as a function of time is discussed. An accompanying graph shows that 4 in. will be the normally used diameter by 1985 and 5 in. by 1990. Material to be tested in device lines in this time frame should be 4 in. or more. The various power losses, 25 kW with a 50% power efficiency, which is much improved over present RF heating efficiencies.

Kern, E. L.↗
NASA NTRS1981

Present growth technology of silicon germanium alloys and possible advantages of microgravity growth

The growth technology of Silicon-germanium (Si-Ge) alloys and the possible advantages of growth in microgravity is reviewed. The Si-Ge alloys have a continuous variation of bandgap energy from the germanium bandgap to the silicon bandgap. The unusual two slope behavior of Eg versus composition is due to the differences in the conduction band structure between Si and Ge. Below 17% (atomic), the germanium band structure dominates; and above it, the bands are "silicon like". It is found that the growth of Si-Ge alloys in microgravity is very attractive. In particular, the float zone method, in which a liquid zone of controlled starting composition, used to grow a large amount of useful alloy crystal. Large temperature gradients and relatively flat growth interfaces are necessary to obtain homogeneous crystal growth.

Stafsudd, O. M.↗
NASA NTRS1982

Fluid flow in crystallization processes

Investigations of the interactions of heat, mass, and momentum transport in crystal growth from the melt are described. Studies of the mall-scale floating zone process and on a prototype of the vertical Bridgman growth system were emphasized. In both systems detailed numerical calculations are used to dissect the interplay between fluid convection and dopant segregation. These calculations are based on finite element techniques that make feasible the complete solution of solidification problems which include convection. Other numerical methods were developed for solving thermal models of crystal growth processes with melt/gas menisci and for simulating the microscale instabilities in solidification interfaces.

Brown, R. A.↗
NASA NTRS1982

III-V semiconductor solid solution single crystal growth

The feasibility and desirability of space growth of bulk IR semiconductor crystals for use as substrates for epitaxial IR detector material were researched. A III-V ternary compound (GaInSb) and a II-VI binary compound were considered. Vapor epitaxy and quaternary epitaxy techniques were found to be sufficient to permit the use of ground based binary III-V crystals for all major device applications. Float zoning of CdTe was found to be a potentially successful approach to obtaining high quality substrate material, but further experiments were required.

Gertner, E. R.↗
NASA NTRS1982

Thermocapillary flows and their stability: Effects of surface layers and contamination

The fluid mechanics and heat transfer of motions driven by surface tension gradients (Marangoni convection) were analyzed theoretically to obtain an understanding of the convection accompanying the process of growing high quality single crystals from the melt in a mu-g environment. The geometries considered include two dimensional liquid filled slots and axisymmetric float zone configurations.

Davis, S. H.↗
NASA NTRS1982

Defect behavior in electron-irradiated boron- and gallium-doped silicon

Production and anneal of defects in electron-irradiated, float-zone silicon solar cells were studied by DLTS. In boron- and gallium-doped, n+-p cells, dominant defects were due to the divacancy, carbon interstitial, and carbon complex. Results suggest that the DLTS peak normally ascribed to carbon complexes also involves gallium. For gallium- and, to a lesser extent, boron-doped samples, damaged lifetime shows substantial recovery only when the carbon-complex peak has annealed out at 400 C. In boron-doped, n+-p-p+ cells, a minority carrier trap (E1) was also observed by DLTS in cells with a boron p+, but not in those with an aluminum p+ back. A level at Ev + 0.31 eV appeared upon 150 C annealing (E1 out) in both p+ back types of samples.

Drevinsky, P. J.↗
NASA NTRS1982

Cold crucible Czochralski for solar cells

The efficiency and radiation resistance of present silicon solar cells are a function of the oxygen and carbon impurities and the boron doping used to provide the proper resistivity material. The standard Czochralski process used grow single crystal silicon contaminates the silicon stock material due to the use of a quartz crucible and graphite components. The use of a process which replaces these elements with a water cooled copper to crucible has provided a major step in providing gallium doped (100) crystal orientation, low oxygen, low carbon, silicon. A discussion of the Cold Crucible Czochralski process and recent float Zone developments is provided.

Trumble, T. M.↗
NASA NTRS1983

Flow in a differentially rotated cylindrical drop at low Reynolds number

A liquid drop held captive between parallel disks that are differentially rotated is a model for the swirling flows induced by crystal rotation in the floating-zone process for growing semiconductor materials. An asymptotic analysis for a cylindrical drop is presented that elucidates the structure of the axisymmetric cellular motions caused by disk rotation at low Reynolds number. Variations of meniscus shape induced by these flows are described in the limit of small capillary number. Most cellular flow fields break the bifurcation point that corresponds to the Plateau-Rayleigh limit for the length of a static drop into two disjoint shape families and lower the maximum stable drop length. This effect is studied by a singular bifurcation analysis.

Harriott, G. M.↗
NASA NTRS1983

Fluid mechanics in crystal growth - The 1982 Freeman scholar lecture

An attempt is made to unify the current state of knowledge in crystal growth techniques and fluid mechanics. After identifying important fluid dynamic problems for such representative crystal growth processes as closed tube vapor transport, open reactor vapor deposition, and the Czochralski and floating zone melt growth techniques, research results obtained to date are presented. It is noted that the major effort to date has been directed to the description of the nature and extent of bulk transport under realistic conditions, where bulk flow determines the heat and solute transport which strongly influence the temperature and concentration fields in the vicinity of the growth interface. Proper treatment of near field, or interface, problems cannot be given until the far field, or global flow, involved in a given crystal growth technique has been adequately described.

Ostrach, S.↗
NASA NTRS1982

Steady thermocapillary flows and their stability

Thermocapillarity can drive steady flows in float-zone configurations. These flows can become unstable and exhibit time-periodic oscillations. In order to obtain insight into such phenomena, studies are made of a simplified system consisting of liquid in a two-dimensional slot. Steady flows and their instabilities are examined.

Sen, A. K.↗
NASA NTRS1983

Materials processing in the reduced-gravity environment of space

Studies of the effects of gravitation on the behavior of fluids and the shapes of materials for the years 1977-1982 are reviewed, with a focus on ground-based research which complements and gives direction to experimentation in the reduced-gravity environment of space. Fluid-behavior topics discussed include crystal growth from melts and from vapor, dendritic solidification and casting, multiphase alloy solidification, electrophoresis, convection behavior, and special heat-flow considerations characteristic of the space environment. With regard to solids, such subjects as containerless positioning technology and its applications (in glass preparation, liquid drop and shell studies, nucleation experiments, and measurements of fundamental properties of molten reactants), liquid floating zones, solid self-deformation, and sedimentation and buoyancy effects are considered and illustrated.

Carruthers, J. R.↗
NASA NTRS1983

Development and fabrication of a high current, fast recovery power diode

A high voltage (VR = 1200 V), high current (IF = 150 A), fast recovery ( 700 ns) and low forward voltage drop ( 1.5 V) silicon rectifier was designed and the process developed for its fabrication. For maximum purity, uniformity and material characteristic stability, neutron transmutation n-type doped float zone silicon is used. The design features a hexagonal chip for maximum area utilization of space available in the DO-8 diode package, PIN diffused junction structure with deep diffused D(+) anode and a shallow high concentration n(+) cathode. With the high temperature glass passivated positive bevel mesa junction termination, the achieved blocking voltage is close to the theoretical limit of the starting material. Gold diffusion is used to control the lifetime and the resulting effect on switching speed and forward voltage tradeoff. For solder reflow assembly, trimetal (Al-Ti-Ni) contacts are used. The required major device electrical characteristics were achieved. Due to the tradeoff nature of forward voltage drop and reverse recovery time, a compromise was reached for these values.

Berman, A. H.↗
NASA NTRS1983

Thin N-I-P radiation resistant solar cells

Several sets of N-I-P sola cells were fabricated from high resistivity silicon to test the effectiveness of various methods for hardening these devices against radiation. Different substrate materials were used to provide information on the effects of dopant concentration, silicon type, and the presence of oxygen. In some cells, P-type float-zone refined silicon of 800, 8000 and 15,000 omega-cm resistivity was used to provide a basis for studying resistivity and purity effects. In other cells, N-type silicon (approximately 800 omega-cm) was used to allow a comparison of dopant type. Oxygen-rich, crucible-grown, silicon (approximately 100 omega-cm, p-type) will provide information on purity effects and defect gettering. Lithium was introduced into different types of silicon to determine if mobile ions can reduce radiation induced defects in high resistivity material. Thin cells (2 mil) were fabricated to study the effects of cell thickness and carrier injection on radiation damage. The electrical characteristics of the different sets of cells were measured, analyzed, and compared prior to shipment of the cells to NASA/Lewis for irradiation.

Meulenberg, A.↗
NASA NTRS1984

Thermocapillary flows and their stability: Effects of surface layers and combination

The theoretical analysis of the fluid mechanics and heat transfer of motions driven by surface tension gradients (Marangoni convection) was researched. Convection accompanying the process of growing high quality single crystals from the melt in a micro-g environment was examined. The geometries considered include two dimensional liquid filled slots and axisymmetric float-zone configurations.

Davis, S. H.↗
NASA NTRS1984

Overview of Bulk Silicon Crystal Growth

The Czochralski and float-zone techniques are reviewed and the consequences of high growth rates in the growth of electronic grade silicon are examined. Impurity segregation coefficients are defined.

Source record↗
NASA NTRS1984

New electron trap in p-type Czochralski silicon

A new electron trap (acceptor level) was discovered in p-type Czochralski (CZ) silicon by current transient spectroscopy. The behavior of this trap was found to be similar to that of the oxygen thermal donors; thus, 450 C annealing increases the trap concentration while high-temperature annealing (1100-1200 C) leads to the virtual elimination of the trap. The new trap is not observed in either float-zone or n-type CZ silicon. Its energy level depends on the group III doping element in the sample. These findings suggest that the trap is related to oxygen, and probably to the acceptor impurity as well.

Mao, B.-Y.↗