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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Light-Emitting Organic Semiconductor-Incorporated Perovskites: Fundamental Properties and Device Applications

Recently, organic semiconductor-incorporated perovskites (OSiPs) have emerged as a new subclass of next-generation organic–inorganic hybrid materials. OSiPs combine the advantages of organic semiconductors, such as large design windows and tunable optoelectronic functionalities, with the excellent charge-transport properties of the inorganic metal-halide counterparts. OSiPs provide a new materials platform for the exploitation of charge and lattice dynamics at the organic–inorganic interfaces for various applications. This Perspective reviews recent achievements in OSiPs highlighting the benefits from organic semiconductor incorporation and elucidates the fundamental light-emitting mechanism, energy transfer, as well as band alignment structures at the organic–inorganic interface. Finally, insights on the emission tunability lead toward a discussion of the potential of OSiPs in light-emitting applications, such as perovskite light-emitting diodes or lasing systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Material jet printing of transparent ceramic Yb:YAG planar waveguides

A new, to the best of our knowledge, 3D additive manufacturing technique utilizing particle-loaded ink jet printing to fabricate transparent ceramic Yb:YAG planar waveguides for laser gain media was demonstrated. Rheological optimization of YAG particle-loaded inks resulted in successful droplet formation and printing resolution. Planar waveguides composed of a Yb:YAG guide encased in undoped YAG cladding were printed with guide thicknesses ranging between 25 and 350 µm and consolidated to high optical quality via solid-state sintering. Sufficiently low optical (1–3%/cm) and intermodal scatter allowed single-mode propagation with a core/clad index difference of &#x0394;<!-- Δ --> n &#x223C;<!-- ~ --> 5.0 &#x00D7;<!-- × --> 10 &#x2212;<!-- - --> 4 (corresponding to 3 at.% Yb). The waveguides were cladding-pumped longitudinally with a 940 nm diode array resulting in 23.6% slope efficiency in 2 ms pulsed operation.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Spectral sensor error analysis for measuring x-ray radiation drive using the DANTE diagnostic toward inertial confinement fusion experiments

DANTE is a diagnostic used to measure the x-radiation drive produced by heating a high-Z cavity (“hohlraum”) with high-powered laser beams. It records the spectrally and temporally resolved radiation flux at x-ray energies between 50 eV and 20 keV. Each sensor configuration on DANTE is composed of filters, mirrors, and x-ray diodes to define 18 different x-ray channels whose output is voltage as a function of time. The absolute flux is then determined from the photometric calibration of the sensor configuration and a spectral reconstructing algorithm. The reconstruction of the spectra vs time from the measured voltages and known response of each channel has presented challenges. Here we demonstrate a novel approach here for quantifying the error on the determined flux based on the channel sensor configuration and most commonly used reconstruction algorithm. In general, we find that the integrated spectral flux from a hohlraum can robustly be reconstructed (within ~14%) using a traditional unfold approach with as few as ten channels due to the underlying assumption of a largely Planckian spectral intensity distribution.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Fielding and analyzing performance of a prototype high voltage output gas switch for Saturn

Timing spread between the thirty-six Saturn modules affects peak electrical power delivered to the Bremsstrahlung diode and can affect vacuum power flow and impedance behavior of the load. To reduce the module spread, a new megavolt gas-insulated closing switch was developed employing design techniques developed for the Z-machine laser triggered switches while retaining Saturn’s simpler electrical triggering. Two modules were temporarily outfitted with the new switches and used separately into local resistive loads (instead of the usual Saturn electron beam load). A reliable operating point and switch time jitter at that point were the goals of the experiments. The target switch reliability is less than one pre-fire in one thousand switch-shots, and a timing standard deviation of 4 nanoseconds. The switches were able to meet both requirements but the number of tests at the chosen point are limited.

43 PARTICLE ACCELERATORS↗
DOE OSTI2021

Novel Poly-Si:Ga/SiOx Passivating Contacts through Non-Equilibrium Doping

Poly-Si/SiOx passivating contacts are one of the key enablers for high-efficiency, low-cost c-Si solar cells. In recent years, record devices have reached efficiencies of 26% in the laboratory and 25% in the industry. The current cell structure utilizing a tunneling oxide passivating contact structure with a back phosphorus-doped poly- Si/SiOx passivating contact and a front boron diffused emitter suffers from large emitter recombination. Thus, replacing the front B diffused emitter with a p-type passivating contact is a route to overcome this deficiency. This gives rise to front/back poly-Si based passivating contacts. To address the low passivation performance of the B-doped poly-Si passivating contacts, we replace B with Ga as a novel p-type dopant to avoid dopant accumulation in the tunneling oxide, which is known to lead to large degradation loss in passivation quality. Here, we introduce a non-equilibrium method via pulsed laser melting to thermally melt and recrystallize the poly-Si and redistribute the dopants, achieving doping concentrations above the solid solubility limit (~4E19 cm-3). We demonstrate a good passivation quality with an iVoc of 721 mV with an active Ga doping concentration in poly-Si >1020 cm-3. Furthermore, we show a low contact resistivity of 33.2 +/- 9.3 mO cm2 using a diode model calculation. Finally, cross-section scanning spreading resistance microscopy was performed to determine the resistance profile across the non-homogeneously doped poly-Si layer.

c-Si↗
DOE OSTI2025

Overcoming energy limitation in post-compression of picosecond pulses by free beam propagation in air and temporal pulse splitting and recombining

Cryogenically cooled diode-pumped Yb:YAG has been demonstrated to efficiently generate pulses of >1 J energy and several picoseconds duration at a kilohertz repetition rate. Pulse broadening and post-compression techniques capable of operating at these high pulse energies will expand the use of these lasers in applications requiring shorter pulses. Towards this goal, we demonstrate the post-compression of 5.5 ps pulses with energy in the 0.1 J range by spectral broadening of self-collimated large area beams in air. In proof-of-principle experiments, pulses of 65 mJ energy from a cryogenically cooled Yb:YAG laser were compressed to 1.1 ps after 65 m propagation in a compact setup in which the beam was folded using flat mirrors. Further energy scaling was demonstrated by combining this spectral broadening technique with temporal pulse splitting and recombining. 120 mJ pulses were split into two pulses and coherently recombined with 85% efficiency after 50 m of propagation in air to yield 1.4 ps pulses.

High Energy Laser↗
DOE OSTI2023

Double Shell Inertial Confinement Fusion X-Ray Spectral Analysis

At the National Ignition Facility (NIF), lasers are used to compress a double shell capsule with deuterium and tritium in order to create nuclear fusion processes. The lasers aim at the inside of a gold hohlraum which excite electrons which further release photons in the range of 0~20keV. The photons randomly disperse, ultimately either going towards the fuel capsule or back out the laser entrance holes. The photons that go towards the fuel capsule work towards the compression of the multi-shell capsule whereas the photons that leave the hohlraum have a chance at being picked up by the Lawrence Livermore National Lab’s ‘Dante’ photon detector. ‘Dante’ analyzes photon data by having 18 planar vacuum x-ray diodes (XRD) behind unique filters to differentiate data amongst various photon energies. The goal of the project was to analyze the characteristics of low and high energy photons released by the gold shell.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Pulsed laser deposition and structural evolution of BaF 2 nanolayers in Eu-doped BaF 2 /Al 2 O 3 layered optical nanocomposite thin films

Here, we have developed a pulsed laser deposition (PLD) geometry for the growth of uniform BaF 2 nanoscale thin films, through control of the deposition conditions. Our goal is to use the BaF 2 layers with controllable structure as component layers in layered optical nanocomposites. The structure of the BaF 2 nanolayer evolves as a function of the layer thickness: BaF 2 grows via a layer-by-layer growth mode on Al 2 O 3 ; the layers are amorphous for a thickness < 3 nm, and then become nanocrystalline as the layer thickness increases. The BaF 2 nanocrystals have an FCC crystal structure with a weak < 111 > texture that becomes stronger for thicker films. We then demonstrate that our BaF2 films can be introduced into layered Al 2 O 3 /BaF 2 /EuO x nanocomposite films, which allows for control of the relative position of the Eu ions and the BaF 2 layer. Cross-section samples of the multilayered films show interfacial intermixing between the layers, which is related to implantation during the PLD process. This intermixing enables the incorporation of Eu ions into BaF 2 layers and form a thin Eu-doped BaF 2 nanolayer at the interface. The layered nanocomposite films show photoluminescence (PL) emission from Eu 3+ ions, and the PL intensity changes can be correlated with the crystallinity and crystal size changes in the BaF 2 layer. Our results provide guidance for achieving thin film nanocomposite materials with controllable structure and photoluminescence behavior for light emitting diodes, photovoltaics and other optical applications.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Calibration of the underground muon detector of the Pierre Auger Observatory

To obtain direct measurements of the muon content of extensive air showers with energy above 10 16.5 eV, the Pierre Auger Observatory is currently being equipped with an underground muon detector (UMD), consisting of 219 10 m 2 -modules, each segmented into 64 scintillators coupled to silicon photomultipliers (SiPMs). Direct access to the shower muon content allows for the study of both of the composition of primary cosmic rays and of high-energy hadronic interactions in the forward direction. As the muon density can vary between tens of muons per m 2 close to the intersection of the shower axis with the ground to much less than one per m 2 when far away, the necessary broad dynamic range is achieved by the simultaneous implementation of two acquisition modes in the read-out electronics: the binary mode, tuned to count single muons, and the ADC mode, suited to measure a high number of them. In this work, we present the end-to-end calibration of the muon detector modules: first, the SiPMs are calibrated by means of the binary channel, and then, the ADC channel is calibrated using atmospheric muons, detected in parallel to the shower data acquisition. The laboratory and field measurements performed to develop the implementation of the full calibration chain of both binary and ADC channels are presented and discussed. The calibration procedure is reliable to work with the high amount of channels in the UMD, which will be operated continuously, in changing environmental conditions, for several years.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Non-Equilibrium Doping of Poly-Si:Ga/SiOx Passivating Contacts Solar Cells

In this contribution, we show that Ga-hyperdoped poly-Si/SiOx contacts are realized by pulsed laser annealing and post-hydrogenation. The motivation behind this work is to improve the inferior performance of boron-doped poly- Si/SiOx contacts when compared to the phosphorus-doped contacts. Here we used Ga as a novel p-type dopant to replace B, as B is known to accumulate at the interface between the oxide and the crystalline silicon and cause recombination. Due to a high diffusivity of Ga in oxide and a much higher segregation coefficient (Si:SiOx), Ga is shown to be immune to the oxide pileup phenomenon. However, Ga has a low solid solubility limit in Si (5x10^19 cm-3), which is not enough to form a low resistivity contact. To overcome this problem, we explored pulsed laser annealing via excimer laser by varying the laser energy densities and pulses. The passivation and electrical properties are studied systematically using photoluminescence (PL), secondary ion mass spectrometry (SIMS), and Van der Pauw-Hall measurements. We show an active Ga doping concentration above 1x10^20 cm^-3, which is above the solid solubility limit of Ga in Si. Good passivation quality is demonstrated with the highest implied Voc (iVoc) of 721 mV on single side polished samples. Furthermore, a low diode contact resistivity of ~22 m..omega.. cm^2 is obtained using Ti/Ag contacts, with minimal metal-to-semiconductor contact resistivity of 0.9 m..omega.. cm^2.

non-equilibrium doping↗
DOE OSTI2023

Ultrabroadband flying-focus using an axiparabola-echelon pair

Flying-focus pulses promise to revolutionize laser-driven secondary sources by decoupling the trajectory of the peak intensity from the native group velocity of the medium over distances much longer than a Rayleigh range. Previous demonstrations of the flying focus have either produced an uncontrolled trajectory or a trajectory that is engineered using chromatic methods that limit the duration of the peak intensity to picosecond scales. Here we demonstrate a controllable ultrabroadband flying focus using a nearly achromatic axiparabola-echelon pair. Spectral interferometry using an ultrabroadband superluminescent diode was used to measure designed super- and subluminal flying-focus trajectories and the effective temporal pulse duration as inferred from the measured spectral phase. The measurements demonstrate that a nearly transform- and diffraction-limited moving focus can be created over a centimeter-scale—an extended focal region more than 50 Rayleigh ranges in length. This ultrabroadband flying-focus and the novel axiparabola-echelon configuration used to produce it are ideally suited for applications and scalable to >100 TW peak powers.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Directional shock diode behavior through the interaction of geometric voids in engineered polymer assemblies

With the advent of additive manufacturing (AM) techniques, a new class of shockwave mitigation and structural supports has been realized through the hierarchical assembly of polymer materials. To date, there have been a limited number of studies investigating the role of structure on shockwave localization and whether AM offers a means to tailor shockwave behavior. Of particular interest is whether the mesoscopic structure can be tailored to achieve shockwave properties in one direction of impact vs the other. In this work, we illustrate directional response in engineered polymer foams. In situ time-resolved x-ray phase contrast imaging at the Advanced Photon Source was used to characterize these diode-like structures. This work offers a breakthrough in materials technology for the development of protective structures that require augmentation of shock in one direction while diminishing transmission in the opposite direction.

42 ENGINEERING↗
DOE OSTI2023

GaN MOCVD Growth on Native substrates for High Voltage (15-20 KV) Vertical Power Devices

This project aims to develop metalorganic chemical vapor deposition (MOCVD) homoepitaxy of GaN on native substrates with fast growth rate (15-20 μm/hr), low background doping (low-10 15 cm -3 ) and smooth surface morphology via comprehensive understanding of the crystal growth process including high quality GaN substrate development and surface preparation, impurity and native defects control, and their impacts on the breakdown field. The team successfully developed a new growth process by introducing the laser-assisted MOCVD (LA-MOCVD) process to address the limited growth rates of GaN in the traditional MOCVD process. Specifically, the use of the CO2 laser with lasing wavelength of 9.219 μm, the strong coupling between the laser beam with the ammonia (GaN MOCVD precursor) leads to efficient decomposition of NH3 which significantly increases the effective group V/III molar ratio and thus suppresses C impurity incorporation in MOCVD GaN. The reduction in C incorporation in LA-MOCVD GaN is especially prominent when the GaN growth rate is fast (> 10 μm/hr), which allows to develop thick GaN films with high crystalline quality and low controllable doping needed for vertical high power device applications. The results of this project lead to the demonstration of vertical GaN PN diodes with record breakdown voltage of ~ 8kV with high Baliga’s figure of merit.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

Experimental generation of polarization entanglement from spontaneous parametric down-conversion pumped by spatiotemporally highly incoherent light

Here, we investigate the cross influence of the pump coherence on the entanglement produced from spontaneous parametric down-conversion (SPDC) in different degrees of freedom (DOFs). We experimentally demonstrate the generation of polarization entanglement from SPDC pumped by a spatiotemporally highly incoherent (STHI) light-emitting diode. Our quantum state tomography measurements using multimode collection fibers to avoid postselection yield a two-qubit state with the concurrence of 0.531 ± 0.006 and purity of 0.647 ± 0.005, in excellent agreement with our theoretically predicted concurrence of 0.552 and purity of 0.652. We find that using an STHI pump reduces the entanglement and purity of the output polarization two-qubit state due to a coupling between the spatiotemporal and polarization DOFs introduced by the birefringence and dispersion of the nonlinear crystal. The viability of SPDC with STHI pumps is important for two reasons: (i) STHI sources are ubiquitous and available at a wider range of wavelengths than lasers, and (ii) the generated STHI polarization-entangled two-photon states could potentially be useful in long-distance quantum communication schemes due to their robustness to scattering.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Signal formation and sharing in AC-LGADs using the ALTIROC 0 front-end chip

The development of detectors that provide high resolution in four dimensions has attracted wide-spread interest in the scientific community for applications in high-energy physics, nuclear physics, medical imaging, mass spectroscopy as well as quantum information. However, finding a technology capable of fulfilling such aspiration proved to be an arduous task. Among other silicon-based candidates, the Low-Gain Avalanche Diode (LGAD) has already shown excellent timing performances but proved to be unsuitable for fine pixelization. Therefore, the AC-coupled LGAD (AC-LGAD) approach was introduced to provide high resolution in both time and space, making it a promising candidate for future 4D detectors. However, appropriate readout electronics must be developed to match the sensor's fast-time and fine-pitch capabilities. This is currently a major technological challenge. Here, we test AC-LGAD prototypes read out by the fast-time ASIC ALTIROC 0, originally developed for the readout of DC-coupled LGADs for the ATLAS experiment at the High Luminosity-LHC. Signal generated by either betas from a 90 Sr source or a focused infra-red laser were analyzed. This paper details the first successful readout of an AC-LGAD sensor using a readout chip. This result will pave the way for the design and construction of a new generation of AC-LGAD-based 4D detectors.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Multichannel Fiber-Optic Silicon Fabry–Pérot Interferometric Bolometer System for Plasma Radiation Measurements

A single-channel fiber-optic bolometer system based on a high-finesse silicon Fabry–Pérot interferometer (FPI) was previously reported, intended to measure plasma radiation from the magnetically confined fusion chamber. Recently, we developed a multichannel fiber-optic bolometer system with five bolometers multiplexed using a coarse wavelength division multiplexer (CWDM) and interrogated with a white-light system involving a superluminescent light-emission diode source and a high-speed spectrometer. One of the bolometers was used as the reference bolometer to compensate for the ambient temperature variations, and the other four bolometers were used for radiation measurement. The bolometers have a simple structure with a silicon pillar at the end of the single-mode fiber and a gold disk on the other side of the silicon pillar. They are also easy to fabricate without stringent requirements on the optical alignment. Analysis of the system optimization was performed to improve the noise performance and to mitigate the vibration effect that may present in the practical application. The system had a significantly enhanced measurement range compared to the previous high-finesse FPI bolometer system for measuring radiation. Test results performed in air using a 405 nm laser as the radiation source showed that the temperature resolution and the noise-equivalent power density of the sensing bolometers connected to each channel of the CWDM were, respectively, ~0.4 mK and ~0.1 W/m2, with a time constant of ~220 ms, which is comparable to the previous more complicated fiber-optic bolometer systems based on high-finesse FPIs that were interrogated using wavelength-scanning lasers.

Uddin, Nezam↗
DOE OSTI2023

Suppressing phase disproportionation in quasi-2D perovskite light-emitting diodes

Electroluminescence efficiencies and stabilities of quasi-two-dimensional halide perovskites are restricted by the formation of multiple-quantum-well structures with broad and uncontrollable phase distributions. Here, we report a ligand design strategy to substantially suppress diffusion-limited phase disproportionation, thereby enabling better phase control. We demonstrate that extending the π-conjugation length and increasing the cross-sectional area of the ligand enables perovskite thin films with dramatically suppressed ion transport, narrowed phase distributions, reduced defect densities, and enhanced radiative recombination efficiencies. Consequently, we achieved efficient and stable deep-red light-emitting diodes with a peak external quantum efficiency of 26.3% (average 22.9% among 70 devices and cross-checked) and a half-life of ~220 and 2.8 h under a constant current density of 0.1 and 12 mA/cm 2 , respectively. Our devices also exhibit wide wavelength tunability and improved spectral and phase stability compared with existing perovskite light-emitting diodes. These discoveries provide critical insights into the molecular design and crystallization kinetics of low-dimensional perovskite semiconductors for light-emitting devices.

14 SOLAR ENERGY↗